JPS5944836A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPS5944836A
JPS5944836A JP57154638A JP15463882A JPS5944836A JP S5944836 A JPS5944836 A JP S5944836A JP 57154638 A JP57154638 A JP 57154638A JP 15463882 A JP15463882 A JP 15463882A JP S5944836 A JPS5944836 A JP S5944836A
Authority
JP
Japan
Prior art keywords
gold wire
bonding
ball
wedge
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57154638A
Other languages
Japanese (ja)
Inventor
Koji Sekiguchi
幸治 関口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP57154638A priority Critical patent/JPS5944836A/en
Publication of JPS5944836A publication Critical patent/JPS5944836A/en
Pending legal-status Critical Current

Links

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To improve the strength of a gold wire bonding at a lead terminal by further ball-bonding onto the wedge bonding area. CONSTITUTION:A ball 3 is formed by heating and fusing the end point of a gold wire 2 supplied through a capillary 1 and it is bonded to an electrode 5 on a semiconductor element 5. A loop of gold wire 2 is the formed by moving the capillary 1, the gold wire 2 is wedge-bonded to a copper clad layer 10 on a lead terminal 5 while giving vibration thereto by ultrasonic wave and the gold wire 2 is cut. A ball is formed by heating and fusing the end point of gold wire 2, such ball is then bonded onto the wedge bonding area while giving vibration with ultrasonic wave and the gold wire 2 is cut.

Description

【発明の詳細な説明】 本発明は銅若しくは銅合金又はこれらの被覆を有するリ
ード端子と半導体素子上の電極に金線を接続する方法に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for connecting a gold wire to a lead terminal having copper or a copper alloy or a coating thereof and an electrode on a semiconductor device.

樹脂モールド型半導体装置は鉄、鉄−ニッケル合金、銅
、銅合金等を素材とするリードフレームを用い、半導体
素子を該リードフレームの所要箇所に接合した後素子上
の電極とリード端子を金線で接続し、最後に素子及びリ
ード端子を包むように樹脂でモールドする工程により製
造されている。金線の接続法は一般に熱圧着ボンディン
グ方法が用いられる。この方法は加熱雰囲気下で行なわ
れ、先ず第１図０）に示すようにキャピラリー１を通し
た金線２の先端を水素トーチ、電気スパーク等によって
加熱熔融してボール３を形成し、該ボール３を第１図（
Ｂ）に示すように半導体素子４上のアルミニウム電極５
にキャピラリー１で押し付は圧着しくボールボンド工程
）、次いで第１図（Ｃ）に示すようにキャピラリー１を
移動して金線のループを作ると共にリード端子乙に金線
を圧着しくウェッジボンド工程）、該ウェッジボンドと
殆んど同時に第１図（Ｄ）に示すようにキャピラリー１
を」２列させながら金線２をクランプ７で挾んで引張っ
て金線を切断する一連の工程から成る。（Ｃ）のウェッ
ジボンド工程及びの）の金線切断工程においてＮＹ（音
波振動を与えると金線はウェッジボンドネック部から切
断され、テール残の問題は生じない。Resin molded semiconductor devices use a lead frame made of iron, iron-nickel alloy, copper, copper alloy, etc. After the semiconductor element is bonded to the required location of the lead frame, the electrodes and lead terminals on the element are connected with gold wire. The device is manufactured through a process of connecting the device with a resin, and finally molding the device and lead terminals with resin. A thermocompression bonding method is generally used to connect the gold wire. This method is carried out in a heated atmosphere. First, as shown in Figure 1 (0), the tip of a gold wire 2 passed through a capillary 1 is heated and melted using a hydrogen torch, electric spark, etc. to form a ball 3. 3 in Figure 1 (
As shown in B), the aluminum electrode 5 on the semiconductor element 4
Then, as shown in Figure 1 (C), the capillary 1 is moved to create a loop of the gold wire, and the gold wire is crimped to the lead terminal B in the wedge bonding process. ), almost simultaneously with the wedge bond, as shown in FIG.
It consists of a series of steps in which the gold wire 2 is held in two rows by clamps 7 and pulled to cut the gold wire. In the wedge bonding process of (C) and the gold wire cutting process of (2), when NY (sonic vibration is applied), the gold wire is cut from the wedge bond neck, and the problem of tail remaining does not occur.

しかしながらこのような熱圧着ボンディング方法を鉄、
鉄−ニッケル合金、銅、銅合金等のリードフレームに直
接適用するとウェッジボンド部の接合強度が著るしく小
さくなるため、リードフレームの少なくともリード端子
６には金又は銀の被覆層８を設けておく必要があった。However, this thermocompression bonding method cannot be applied to iron,
If applied directly to a lead frame made of iron-nickel alloy, copper, copper alloy, etc., the bonding strength of the wedge bond portion will be significantly reduced, so at least the lead terminal 6 of the lead frame is provided with a gold or silver coating layer 8. I needed to leave it there.

リードフレームとして銅又は銅合金、又は鉄、鉄−ニッ
ケル合金等の素材に銅又は銅合金をメッキ等により被覆
したものが直接使用できれば半導体装置のコストを低下
せしめることができる。If copper or a copper alloy, or a material such as iron or iron-nickel alloy coated with copper or a copper alloy by plating or the like can be used directly as a lead frame, the cost of the semiconductor device can be reduced.

本発明者は銅若しくは銅合金又はこれらの被覆を有する
リード端子と金線との接合強度を向上させるべく種々実
験しだ結果、ウェッジボンド部上に更にボールボンドす
ることにより、リード端子における金線接合強度を大幅
に向上できることを見出して本発明に到達した。The inventor of the present invention has conducted various experiments to improve the bonding strength between a gold wire and a lead terminal having copper or a copper alloy or a coating thereof, and has found that by further ball bonding on the wedge bond part, the gold wire in the lead terminal can be improved. The present invention was achieved by discovering that the bonding strength can be significantly improved.

更に詳しくは、本発明は、銅若しくは銅合金又はこれら
の被覆を有するリード端子と半導体素子上の電極に金線
を熱圧着ポンディングするに際し、先ず電極部にボール
ボンドし、次いでリード端子にウェッジボンドした後、
該ウェッジボンド部」二に超音波振動をＪうえながらボ
ールボンドするのと殆んど同時に金線を上方に引張り金
線を切断することを特徴とするワイヤーボンディング方
法である。More specifically, in the present invention, when thermocompression bonding a gold wire to a lead terminal having copper or a copper alloy or a coating thereof and an electrode on a semiconductor element, first ball bonding is performed to the electrode part, and then a wedge is attached to the lead terminal. After bonding,
This wire bonding method is characterized in that the gold wire is pulled upward to cut the gold wire almost at the same time as ball bonding is performed while applying ultrasonic vibration to the wedge bond portion.

第２図は本発明の詳細な説明する図である。第２図にお
いて、リードフレームし１Φ；１．ニーニッケル合金を
素材とし、半導体素子搭載部９及びリード端子乙には銅
被覆層１０を有し、半Ｕ’ｔ　（ト素子４は該搭載部９
に半田により固着されている。第２図（ト）乃至（Ｄ）
のボンデイング工程ｋＪ−第１図（ト）乃至（Ｄ）の工
程と全く同様である。即ち、第２図（ト）に示すように
キャピラリー１を通した金線２の先端を水素トーチ、電
気スパーク等によって加熱熔融してボール６を形成し、
該ボール６を第２図（Ｂ）に示すように半導体素子４上
の’ｉｌｊ’極５にキャピラリー１で押し・付はボール
ボンドする。次いで第２図（Ｃ）に示すようにキャピラ
リー１を移動して金線のループを作り、リードＰｉｉＡ
子６上の銅被覆層１０に金線を超音波振動を与えながら
キャピラリー１で押し付はウェッジボンドし、殆んど同
時に第２図（Ｄ）に示すようにギヤピラリ−１を上昇さ
せながら金線２をクランプ７で挾んで引張多切断する。FIG. 2 is a diagram explaining the present invention in detail. In FIG. 2, the lead frame is 1Φ; 1. The semiconductor element mounting part 9 and the lead terminal B have a copper coating layer 10, and the semiconductor element mounting part 9 and the lead terminal B have a copper coating layer 10.
is fixed with solder. Figure 2 (G) to (D)
The bonding process kJ is exactly the same as the process shown in FIGS. 1(G) to (D). That is, as shown in FIG. 2(g), the tip of a gold wire 2 passed through a capillary 1 is heated and melted using a hydrogen torch, an electric spark, etc. to form a ball 6.
The ball 6 is pressed and attached to the 'ilj' pole 5 on the semiconductor element 4 by the capillary 1 and is ball-bonded as shown in FIG. 2(B). Next, as shown in FIG. 2(C), move the capillary 1 to make a gold wire loop, and attach the lead PiiA.
The gold wire is wedge-bonded to the copper coating layer 10 on the tip 6 with the capillary 1 while applying ultrasonic vibration, and the gold wire is wedge-bonded with the capillary 1 while raising the gear pillar 1 as shown in FIG. 2(D) almost simultaneously. The wire 2 is held between clamps 7 and pulled and cut multiple times.

第２図（Ｅ）乃至（Ｇ）は本発明を％機付ける工程であ
る。先ず第２図＠）は、第２図（Ｄ）工程により切断さ
れた金線２の先端を第２図（Ａ）と同様に加熱熔融し、
ボール３を形成する工程である。このように形成された
ボール５を第２図（Ｆ）に示すように前記ウェッジボン
ド部上に超音波振動を与えながら、キャピラリー１で押
し伺はボールボンドする。通常鋼は金、銀に比べて酸化
し易く、接合強度が不充分になり勝ちであるが、このボ
ールボンドによりリード端子における金線接合面積が増
加し、接合強度を高めることができる。このボールボン
ドと、殆んど同時に第２図（Ｇ）に示すように金線をク
ランプ７で挾み、金線を上方に引張ると金線はボールボ
ンドのネック部で切断される。超音波振動を与えずに該
ボールボンドを行ない金線を引張ると切断箇所が一定せ
ず、いわゆるテール残となって他の金線やリード端子と
接触する恐れがある。FIGS. 2(E) to 2(G) are steps for implementing the present invention. First, in Fig. 2 (@), the tip of the gold wire 2 cut in the step of Fig. 2 (D) is heated and melted in the same manner as in Fig. 2 (A).
This is the process of forming the ball 3. The balls 5 thus formed are pressed and ball-bonded with the capillary 1 while applying ultrasonic vibrations to the wedge bond portion, as shown in FIG. 2(F). Normally, steel is more easily oxidized than gold or silver and tends to have insufficient bonding strength, but this ball bond increases the bonding area of the gold wire in the lead terminal and increases the bonding strength. At almost the same time as this ball bond, a gold wire is held between the clamps 7 and pulled upward as shown in FIG. 2(G), and the gold wire is cut at the neck of the ball bond. If the ball bonding is performed without applying ultrasonic vibration and the gold wire is pulled, the cut point will not be constant, and there is a risk that a so-called tail will be left and come into contact with other gold wires or lead terminals.

上記説明は鉄−ニッケル合金製リードフレームの一部に
銅被覆を施したものについて説明したが、リードフレー
ム素材が鉄−ニッケル合金の代りに鉄であっても良いこ
とはもちろんである。リードフレーム素材が銅又は銅合
金の場合はこのような被覆は炸くても構わない。In the above description, a part of the lead frame made of an iron-nickel alloy is coated with copper, but it goes without saying that the lead frame material may be iron instead of the iron-nickel alloy. If the lead frame material is copper or a copper alloy, such a coating may not be applied.

本発明は従来のポンディング方法と比較して金線１本当
りのポンディング時間が多少長くなり、又、所要金線長
さも多少長くなるが、リードフレームに対する金又は銀
の被覆に要するコストを補って余りあり、半導体装置の
製造コスト低減に寄与する所大である。Compared to the conventional bonding method, the bonding time per gold wire is slightly longer and the required length of gold wire is also slightly longer, but the cost required for coating the lead frame with gold or silver can be reduced. This is more than enough to make up for it, and it is a major contribution to reducing the manufacturing cost of semiconductor devices.

実施例及び比較例 鉄を素材とするリードフレーム全面に銅をに、Ｊさ５ミ
クロンにメッキしたものを用い、半導体素子を半田付け
してボンディング試験に供した。Examples and Comparative Examples A lead frame made of iron and plated with copper to a J diameter of 5 microns was used, and a semiconductor element was soldered to the lead frame and subjected to a bonding test.

用いた金線は直径３３ミクロンで、ボールボンドの圧着
荷重８０Ｆ、ウェッジボンドの圧着荷重１００１、温度
２５０℃でボールボンド及びウェッジポンド倒れにも超
音波振動を力えながら従来法及び本発明法でボンディン
グした。ボンディング完了後金線ループ部を上方に引っ
張り、金線の切断又は接合面での剥離が生ずる強度を測
定した。測定結果を第１表に示す。The gold wire used had a diameter of 33 microns, and the pressure bonding load was 80F for ball bond, the pressure bonding load was 1001F for wedge bond, and the temperature was 250℃. Bonded. After the bonding was completed, the loop portion of the gold wire was pulled upward, and the strength at which the gold wire was cut or peeled off at the bonding surface was measured. The measurement results are shown in Table 1.

（第７頁以下余白） 強度テストにおいて本発明法によるものは殆んど金線ル
ープ部の破断てあり、従来法によるものはウェッジボン
ド部からの剥離であった。(Margins from page 7 onwards) In the strength test, most of the wires produced by the method of the present invention were found to have broken at the gold wire loop portion, while those produced by the conventional method were peeled from the wedge bond portion.

この結果本発明法はリード端子における金線接合強度の
向上に極めて有効であることが分る。The results show that the method of the present invention is extremely effective in improving the bonding strength of gold wires in lead terminals.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（５）〜０））は従来のボンディング方法におけ
る各工程を説明する図、第２図（ト）〜（Ｇ）は本発明
ボンディング方法の各工程を説明する図である。 １・・・ボンディングキャピラリー、２・・・金線、名
・・リード端子、７・・・クランプ。 特　許　出　願　人　住友金属鉱山株式会社１５９FIGS. 1(5) to 0)) are diagrams explaining each step in the conventional bonding method, and FIGS. 2(g) to 2(G) are diagrams explaining each step in the bonding method of the present invention. 1...Bonding capillary, 2...Gold wire, Name...Lead terminal, 7...Clamp. Patent applicant: Sumitomo Metal Mining Co., Ltd. 159

Claims (1)

【特許請求の範囲】[Claims] 銅若しくは銅合金又はこれらの被覆を有するリード端子
と半導体素子上の電極に金線を熱圧着ボンディングする
に際し、先ず電極部にボールボンドし、次いでリード端
子にウェッジボンドした後、該ウェッジボンド部上に超
音波振動を力えながらボールボンドするのと殆んど同時
に金線を上方に引張り金線を切断することを特徴とする
ワイヤーボンディング方法。When thermocompression bonding a gold wire to a lead terminal having copper or a copper alloy or a coating thereof and an electrode on a semiconductor element, first ball bonding is performed to the electrode part, then wedge bonding is performed to the lead terminal, and then a bonding process is performed on the wedge bond part. A wire bonding method characterized by pulling the gold wire upward and cutting the gold wire almost simultaneously with ball bonding while applying ultrasonic vibration to the wire.
JP57154638A 1982-09-07 1982-09-07 Wire bonding method Pending JPS5944836A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57154638A JPS5944836A (en) 1982-09-07 1982-09-07 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57154638A JPS5944836A (en) 1982-09-07 1982-09-07 Wire bonding method

Publications (1)

Publication Number Publication Date
JPS5944836A true JPS5944836A (en) 1984-03-13

Family

ID=15588579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57154638A Pending JPS5944836A (en) 1982-09-07 1982-09-07 Wire bonding method

Country Status (1)

Country Link
JP (1) JPS5944836A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5468683A (en) * 1992-09-25 1995-11-21 U.S. Philips Corporation Method of manufacturing an optoelectronic semiconductor device having a single wire between non-parallel surfaces
JP2002353267A (en) * 2001-05-23 2002-12-06 Matsushita Electric Ind Co Ltd Wire bonding method
DE102006033222A1 (en) * 2006-07-18 2008-01-24 Epcos Ag Module with flat structure and procedure for assembly

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5468683A (en) * 1992-09-25 1995-11-21 U.S. Philips Corporation Method of manufacturing an optoelectronic semiconductor device having a single wire between non-parallel surfaces
JP2002353267A (en) * 2001-05-23 2002-12-06 Matsushita Electric Ind Co Ltd Wire bonding method
DE102006033222A1 (en) * 2006-07-18 2008-01-24 Epcos Ag Module with flat structure and procedure for assembly
DE102006033222B4 (en) * 2006-07-18 2014-04-30 Epcos Ag Module with flat structure and procedure for assembly

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