JPS5925282A - Photosemiconductor package with photo transmission line - Google Patents

Photosemiconductor package with photo transmission line

Info

Publication number
JPS5925282A
JPS5925282A JP57133782A JP13378282A JPS5925282A JP S5925282 A JPS5925282 A JP S5925282A JP 57133782 A JP57133782 A JP 57133782A JP 13378282 A JP13378282 A JP 13378282A JP S5925282 A JPS5925282 A JP S5925282A
Authority
JP
Japan
Prior art keywords
transmission line
package
optical
photo
mirror
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57133782A
Other languages
Japanese (ja)
Other versions
JPH0355988B2 (en
Inventor
Tetsuo Horimatsu
哲夫 堀松
Takakiyo Nakagami
中神　隆清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57133782A priority Critical patent/JPS5925282A/en
Publication of JPS5925282A publication Critical patent/JPS5925282A/en
Publication of JPH0355988B2 publication Critical patent/JPH0355988B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To make the mounting height of a package remarkably lower than a conventional by a method wherein a mirror is provided on the back surface of the cap of the package. CONSTITUTION:The top end of a photo transmission line 9 such as an optical fiber, etc. whose top end is poslished obliquely and a photosemiconductor integrated circuit 7 are contained in the package 10 and then fixed on the same plane. On the back surface of the cap 11 for sealing purpose, the mirror 13 to transmit the light 12 between the photo transmission line 9 and the photosemiconductor integrated circuit 7 is provided. It can be contrived that the light 12 emitted from the photo transmission line 9 is reflected by one mirror 13 and becomes incident to a photo receiving element 8, and two mirrors 14 and 15 inclined at 45 deg. can be utilized. Or, the photo receiving element 8 can be used for photo transmission as a light emitting element. Thereby, the mounting height H' of the package 10 can be made low.

Description

【発明の詳細な説明】 （１）発明の技術分野 不発ｌ］ＩＩは光伝送路付光半２ｒ）一体音収容したノ
くソケージの改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention [1] II relates to the improvement of an optical semi-circle cage with an optical transmission line that accommodates integral sound.

（２）従来技術と問題点 第１図は光曲信に用いられる光伝送絡付光半導体集積回
路の構造を示す図である。この光半導体集積回路はブレ
ーナ構造の半導体１に受光素子２、発光素子２ａ、ＩＣ
３等を形成し、ノ（ノケージ４の中に収容し光伝送路５
を）くツケージの蓋４′に垂直に取着している。このよ
うな構造の光半導体集積回路はプリント板６に搭載した
とき、光ファイバ等を用いた光伝送路５を急激に曲げる
ことができないのでその実装高さＨが著しく犬となる欠
点があった。(2) Prior art and problems FIG. 1 is a diagram showing the structure of an optical semiconductor integrated circuit with optical transmission entwined for use in optical communication. This optical semiconductor integrated circuit includes a semiconductor 1 having a Brehner structure, a light receiving element 2, a light emitting element 2a, and an IC.
3 etc., and accommodated in the cage 4 and optical transmission line 5.
) is attached vertically to the cage lid 4'. When an optical semiconductor integrated circuit having such a structure is mounted on a printed circuit board 6, the mounting height H becomes extremely large because the optical transmission line 5 using an optical fiber or the like cannot be bent sharply. .

（３）発明の目的 本発明は上記従来の欠点に鑑み、実装高さの低い光伝送
絡付光半導体パッケージを提供することを目的とするも
のである。(3) Purpose of the Invention In view of the above-mentioned conventional drawbacks, it is an object of the present invention to provide an optical transmission entangled optical semiconductor package with a low mounting height.

（４）発明の構成 そしてこの目的は本発明によれば、光ファイバ等の光伝
送路を備えた光半導体素子用のパンケージにおいて、封
正金行なうだめの蓋の裏面に光伝送路と光半導体素子間
の光を伝送するためのミラーを設けたことを特徴とする
光示送路付光半導体パンゲージを提供することによって
達成される。(4) Structure and object of the invention According to the present invention, in a pancase for an optical semiconductor element equipped with an optical transmission path such as an optical fiber, the optical transmission path and the optical semiconductor This is achieved by providing an optical semiconductor pan gauge with an optical transmission path, which is characterized by being provided with a mirror for transmitting light between elements.

（５）発明の実施例 以下本発明実施例を図面によって詳述する。(5) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.

第２図は本発明ｙｃよる光伝送絡付光半導体バックージ
の構造を説明するための図である。同図においで、７は
光半導体集積回路、８はその受光素子、９は受光用光伝
送路、１０はパッケージ、１１はその蓋をそれぞれ示す
。FIG. 2 is a diagram for explaining the structure of the optical semiconductor backage with optical transmission entanglement according to the present invention. In the figure, 7 is an optical semiconductor integrated circuit, 8 is a light receiving element thereof, 9 is an optical transmission line for receiving light, 10 is a package, and 11 is a lid thereof.

本実施例は、図に示す如く先端を斜に研磨した光伝送路
９の先端と光半導体集積回路７とをパッケージ１０に収
容して同一平面に固定し７、蓋１１の裏面には光伝送路
９から出た光１２が反射して受光素子８に入射するよう
にミラー１３を設けたものである。In this embodiment, as shown in the figure, the tip of the optical transmission line 9 whose tip is obliquely polished and the optical semiconductor integrated circuit 7 are housed in a package 10 and fixed on the same plane 7, and the back surface of the lid 11 is provided with an optical transmission path 9. A mirror 13 is provided so that the light 12 emitted from the path 9 is reflected and enters the light receiving element 8.

このように構成さｆ］、た本実施例は光伝送路９が光半
導体集積回路７の表面と平行に配置できるのでバングー
７１０の実装置−２！Ｉ（’を従来に比して著ｌ〜く低
くすることができる。また光伝送路９と光半導体集積回
路７とを同一平面上に取／ｄできるので組立が容易とな
る利点も生ずる。In this embodiment, the optical transmission line 9 can be arranged parallel to the surface of the optical semiconductor integrated circuit 7, so the actual device of the Bangu 710-2! I(' can be significantly lowered than in the past. Also, since the optical transmission line 9 and the optical semiconductor integrated circuit 7 can be placed on the same plane, there is an advantage that assembly is easy.

第３図は他の実施例を示す図である。同図において第２
図と同一部分は同一符号を付して示した。FIG. 3 is a diagram showing another embodiment. In the same figure, the second
The same parts as in the figures are indicated with the same reference numerals.

なお１４及び１５はミラーである。Note that 14 and 15 are mirrors.

本実施例は蓋１１の裏面に４５°に傾けてミラー１４．
１５を設は光伝送路９から出た光１２を２回反射させて
受光素子８に導くようにしたものであり、その効果は前
実施例と全く同様である。In this embodiment, a mirror 14 is installed on the back side of the lid 11 at an angle of 45 degrees.
15 is designed to reflect the light 12 emitted from the optical transmission line 9 twice and guide it to the light receiving element 8, and the effect is exactly the same as in the previous embodiment.

なお、第２図及び第３図に示した実施例は受光用として
説明したが、受光素子８を発光孝子とすれば送光用にも
用いられることは勿論であり、同様の効果を期待するこ
とができる。Although the embodiments shown in FIGS. 2 and 3 have been explained as being for light reception, if the light receiving element 8 is used as a light emitting element, it can of course also be used for light transmission, and similar effects are expected. be able to.

（６）発明の効果 以上、詳細に説明したように本発明の光伝送絡付光半導
体バノゲージは、パッケージの蓋の裏面にミラーを設け
る簡単な構成によジ、そＵ）実装置ζを従来に比して著
（２く低くすることを可能とした効果大なるものである
。(6) Effects of the Invention As explained in detail above, the optical semiconductor vano gauge with optical transmission entanglement of the present invention has a simple structure in which a mirror is provided on the back side of the package lid. This is a significant effect in that it is possible to reduce the temperature by 2 times.

【図面の簡単な説明】[Brief explanation of the drawing]

７Ｊ！１図は従来の光伝送絡付光半導体パッケージの構
造を示す［ゾ、第２図は本発明による光伝送絡付光半導
体パッケージの実施例の構造を示す図、第３図は他の実
施例の構造を示す図である。 図面において、７は光半導体集積回路、８はその受光素
子、９は光伝送路、１０ｉユパツケージ、１１は蓋、１
３．１４．１５はミラーをそｉＬそれ示す。7J! Figure 1 shows the structure of a conventional optical semiconductor package with optical transmission entwining [2], Figure 2 shows the structure of an embodiment of the optical semiconductor package with optical transmission entanglement according to the present invention, and Fig. 3 shows another embodiment. FIG. In the drawing, 7 is an optical semiconductor integrated circuit, 8 is its light receiving element, 9 is an optical transmission line, 10i package cage, 11 is a lid, 1
3.14.15 shows the mirror.

Claims (1)

【特許請求の範囲】[Claims] １、光ファイバ等の光伝送路を備えた光半導体素子用の
パッケージにおいて、封止を行なうだめの蓋の裏面に光
伝送路と光半導体素子間の光を伝送するためのミラーを
設けたことを特徴とする光示送路付光半導体パッケージ
。1. In a package for an optical semiconductor device equipped with an optical transmission line such as an optical fiber, a mirror is provided on the back side of the lid for sealing to transmit light between the optical transmission line and the optical semiconductor element. An optical semiconductor package with an optical transmission path.
JP57133782A 1982-08-02 1982-08-02 Photosemiconductor package with photo transmission line Granted JPS5925282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57133782A JPS5925282A (en) 1982-08-02 1982-08-02 Photosemiconductor package with photo transmission line

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57133782A JPS5925282A (en) 1982-08-02 1982-08-02 Photosemiconductor package with photo transmission line

Publications (2)

Publication Number Publication Date
JPS5925282A true JPS5925282A (en) 1984-02-09
JPH0355988B2 JPH0355988B2 (en) 1991-08-27

Family

ID=15112863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57133782A Granted JPS5925282A (en) 1982-08-02 1982-08-02 Photosemiconductor package with photo transmission line

Country Status (1)

Country Link
JP (1) JPS5925282A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161759A (en) * 1985-01-07 1986-07-22 シーメンス、アクチエンゲゼルシヤフト Integrated optoelectronics device
EP0305112A2 (en) * 1987-08-27 1989-03-01 AT&T Corp. Means for coupling an optical fiber to an opto-electronic device
EP0308604A1 (en) * 1987-09-25 1989-03-29 Siemens Aktiengesellschaft Optical coupling device for a laser diode with an optical wave guide
US4893162A (en) * 1986-07-09 1990-01-09 U.S. Philips Corp. Integrated semiconductor arrangement of the coupling type between a photodetector and a light waveguide
US4945391A (en) * 1986-05-06 1990-07-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device housing with laser diode and light receiving element
EP0404053A2 (en) * 1989-06-19 1990-12-27 Fujitsu Limited Photo-semiconductor module
JPH0427408U (en) * 1990-06-27 1992-03-04
JPH0456353U (en) * 1990-09-25 1992-05-14
EP0611975A1 (en) * 1988-03-03 1994-08-24 AT&T Corp. Subassembly for optoelectronic devices
EP0651266A2 (en) * 1993-11-01 1995-05-03 AT&T Corp. Method and arrangement for arbitrary angle mirrors in substrates for use in hybrid optical systems
WO1997025638A3 (en) * 1996-01-09 1997-10-02 Siemens Ag An arrangement for optical coupling of a light emitting element with a light receiving element

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161759A (en) * 1985-01-07 1986-07-22 シーメンス、アクチエンゲゼルシヤフト Integrated optoelectronics device
US4945391A (en) * 1986-05-06 1990-07-31 Mitsubishi Denki Kabushiki Kaisha Semiconductor device housing with laser diode and light receiving element
US4893162A (en) * 1986-07-09 1990-01-09 U.S. Philips Corp. Integrated semiconductor arrangement of the coupling type between a photodetector and a light waveguide
EP0305112A2 (en) * 1987-08-27 1989-03-01 AT&T Corp. Means for coupling an optical fiber to an opto-electronic device
EP0308604A1 (en) * 1987-09-25 1989-03-29 Siemens Aktiengesellschaft Optical coupling device for a laser diode with an optical wave guide
EP0611975A1 (en) * 1988-03-03 1994-08-24 AT&T Corp. Subassembly for optoelectronic devices
US5023447A (en) * 1989-06-19 1991-06-11 Fujitsu Limited Photo-semiconductor module employing semi-spherical lens to enhance detection
EP0404053A2 (en) * 1989-06-19 1990-12-27 Fujitsu Limited Photo-semiconductor module
JPH0427408U (en) * 1990-06-27 1992-03-04
JPH0456353U (en) * 1990-09-25 1992-05-14
EP0651266A2 (en) * 1993-11-01 1995-05-03 AT&T Corp. Method and arrangement for arbitrary angle mirrors in substrates for use in hybrid optical systems
EP0651266A3 (en) * 1993-11-01 1997-12-10 AT&T Corp. Method and arrangement for arbitrary angle mirrors in substrates for use in hybrid optical systems
WO1997025638A3 (en) * 1996-01-09 1997-10-02 Siemens Ag An arrangement for optical coupling of a light emitting element with a light receiving element

Also Published As

Publication number Publication date
JPH0355988B2 (en) 1991-08-27

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