JPS5923572A - Solar battery - Google Patents

Solar battery

Info

Publication number
JPS5923572A
JPS5923572A JP57134066A JP13406682A JPS5923572A JP S5923572 A JPS5923572 A JP S5923572A JP 57134066 A JP57134066 A JP 57134066A JP 13406682 A JP13406682 A JP 13406682A JP S5923572 A JPS5923572 A JP S5923572A
Authority
JP
Japan
Prior art keywords
layer
type
collected
layers
back surfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57134066A
Other languages
Japanese (ja)
Inventor
Kiyoshi Hosoya
清志 細谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP57134066A priority Critical patent/JPS5923572A/en
Publication of JPS5923572A publication Critical patent/JPS5923572A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0687—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain an efficient solar battery by forming thin N type or P type film on the front and back surfaces of a thick N type or P type film and creating electromotive force between both layers. CONSTITUTION:P type layers 1 of approx. 1mum are formed on the front and back surfaces of an N type layer 2 having a thickness of approx. 400mum. An N<+> type layer 3 for ohmically connected in a spot state is formed on both side ends of the layer 2 of the back surface, connected in parallel with leads 5 as a negative electrode. Electrodes 4 are attached onto the P type layer 1 of the front and back surfaces, and connected in parallel with each other by the leads 5. When solar light is incident from one side, electron and hole paris are produced by short wavelength by the P-N junctions at the light receiving side, the holes are collected to the layer 1 in the vicinity of the light receiving surface, and the electrons are collected to the layer 3 under the layer. Electron and hole paris are produced at the P-N junction in the deep position with the long wavelength, the holes are collected to the layer 1, and the electrons are collected to the layer 3, thereby creating the electromotive force between the layers 1 and 2. According to this structure, the long wavelength light which is not therefore used can also be used, thereby improving the efficiency.

Description

【発明の詳細な説明】 この発明は従来利用されていなかった長い波長の光をも
利用できる効率のよい太ｉｔ池を提供せんとする。DETAILED DESCRIPTION OF THE INVENTION The present invention aims to provide an efficient thick IT pond that can also utilize light with long wavelengths that have not been utilized in the past.

従前の太ｒ＃電池は、第１図の如く例えば４００ミクロ
ン厚前後のＮ型層（またはＰ型層）Ｉ２）の表面に１ミ
クロン厚膜度のＰ型層（Ｐ型層に対してはＮ型層）（１
）を形成してＰ−Ｎ接合を形成し両層間に起電力を発生
せしめるものであって、表面より直射される太陽光によ
り起電力を発生させるものであったが、発電に寄与する
太陽光線は波長が７０００〜８００ｏＸ以下の所謂短い
波長のもののみであって、波長が７０００〜８０００Ａ
以上の長い波長の光は透過してしまって起電力発生に寄
与しないものであった。As shown in Fig. 1, the conventional thick R# battery has a 1 micron thick P type layer (for the P type layer N-type layer) (1
) to form a P-N junction and generate an electromotive force between both layers, and the electromotive force was generated by sunlight shining directly from the surface, but the sunlight that contributes to power generation is limited to so-called short wavelengths with wavelengths of 7000 to 800oX or less, and those with wavelengths of 7000 to 8000A
Light with longer wavelengths was transmitted and did not contribute to the generation of electromotive force.

この発明は上記欠点を除去せんとするものであるＯ 以下この発明を第２図図示例に基づいて説明する。This invention seeks to eliminate the above drawbacks. The present invention will be explained below based on the example shown in FIG.

（２１は４００ミクロン厚前後のＮ型層であり、その表
面及び裏面の双方に岸さ１ミクロン厚膜度Ｐ型層ｆｉｌ
を形成せる・ Ｇ（１は裏面のＮ型１！！（２）の両側端部にスポット
的に形成されたオーミックコンタクトをとるためのＮ層
であり、リード線（５）により並列接続され負電極とさ
れている。(21 is an N-type layer with a thickness of about 400 microns, and a P-type layer with a thickness of 1 micron on both the front and back sides.
・G (1 is an N layer for making ohmic contact formed spot-wise on both ends of N type 1!! (2) on the back side, and is connected in parallel with lead wire (5) to form a negative It is considered an electrode.

（４）は表面及び裏面のＰ型層（１）の表面に取着され
た電極であり、リード線β）により並列接続され電極と
されている。(4) are electrodes attached to the surfaces of the P-type layer (1) on the front and back sides, and are connected in parallel by lead wires β).

而してこの発明による太陽電池の一方の側から太陽光線
が入射する場合、表面側のＰ−Ｎ接合部において短い波
長の光が起電力の形成に寄与し。When sunlight enters the solar cell according to the present invention from one side, light with a short wavelength contributes to the formation of an electromotive force at the P-N junction on the front side.

該部分を透過していく長い波長の光は裏面側のＰ・Ｎ接
合において起電力の形成に寄与する。The long wavelength light that passes through this portion contributes to the formation of an electromotive force at the P/N junction on the back side.

即ち短い波長の太陽光線により、表面側（受光面側）の
Ｐ、Ｎ接合部で、電子・正孔の対が発生し、正孔は受光
面に近い側のＰ層（１）に集められ、を子は下部のＮ中
層（３）に集められる。In other words, due to short wavelength sunlight, pairs of electrons and holes are generated at the P-N junction on the surface side (light-receiving surface side), and the holes are collected in the P layer (1) on the side closer to the light-receiving surface. , the children are collected in the lower N middle layer (3).

また長い波長の太陽光線により、深い位置のＰ・Ｎ接合
で、電子・正孔の対が発生し、正孔は下部のＰ　１ｍ　
（１１に集められ、電子は下部のＮ中層（３）に集めら
れる。このようにしてＰＩＷ（１）とＮ　Ｉ６　（２）
間に起１．力か発生する。In addition, due to the long wavelength sunlight, pairs of electrons and holes are generated at the deep P/N junction, and the holes are transferred to the lower P 1m.
(11), and the electrons are collected in the lower N intermediate layer (3). In this way, PIW (1) and N I6 (2)
Occurred between 1. force is generated.

以上のようにしてこの発明による太陽電池では、短い波
長から長い波長までのすべての太陽光線か有効に起電力
の形成に寄与するのである。As described above, in the solar cell according to the present invention, all sunlight rays from short wavelengths to long wavelengths effectively contribute to the formation of electromotive force.

尚、上記実施例においては、Ｎ型層をベースとしてその
表裏にＰ型層の薄層を形成しているが、従来の太陽宵、
池においていずれの層をベースとしてもよかったのと同
様、逆にＰ型層をベースとしその表裏にＮ型層のＮ１−
を形成してもよいものである。In the above embodiment, a thin P-type layer is formed on the front and back surfaces of an N-type layer, but the conventional Taiyoyo,
In the same way that any layer could be used as a base in a pond, conversely, a P-type layer is used as a base and an N-type layer is N1- on the front and back sides.
may be formed.

【図面の簡単な説明】[Brief explanation of the drawing]

ｉ８１図は従来例を示す概略断面図、第２図はこの発明
の一実施例を示す概略断面図である。 特許出願人 松下電工株式会社 代理人弁理士　竹　元　敏　丸 （ほか２名）Figure i81 is a schematic sectional view showing a conventional example, and Figure 2 is a schematic sectional view showing an embodiment of the present invention. Patent applicant Matsushita Electric Works Co., Ltd. Representative patent attorney Toshimaru Takemoto (and 2 others)

Claims (1)

【特許請求の範囲】[Claims] （１）Ｎ型層またはＰ型層の厚膜の表面及び裏面に厚膜
とは異層であるＮ型層またはＰ型層の薄膜を形成し両層
間に起電力を発生せしめることを特徴とする太＃Ｊｔ池
。(1) A thin film of an N-type layer or a P-type layer, which is a different layer from the thick film, is formed on the front and back surfaces of a thick film of an N-type layer or a P-type layer, and an electromotive force is generated between the two layers. Suruta#Jtike.
JP57134066A 1982-07-30 1982-07-30 Solar battery Pending JPS5923572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57134066A JPS5923572A (en) 1982-07-30 1982-07-30 Solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57134066A JPS5923572A (en) 1982-07-30 1982-07-30 Solar battery

Publications (1)

Publication Number Publication Date
JPS5923572A true JPS5923572A (en) 1984-02-07

Family

ID=15119570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57134066A Pending JPS5923572A (en) 1982-07-30 1982-07-30 Solar battery

Country Status (1)

Country Link
JP (1) JPS5923572A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61103940A (en) * 1984-10-26 1986-05-22 ダウ　コーニング　コーポレーシヨン Polyorganosiloxane composition
EP0984494A1 (en) * 1998-03-19 2000-03-08 Toyota Jidosha Kabushiki Kaisha Solar battery

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61103940A (en) * 1984-10-26 1986-05-22 ダウ　コーニング　コーポレーシヨン Polyorganosiloxane composition
JPH049819B2 (en) * 1984-10-26 1992-02-21
EP0984494A1 (en) * 1998-03-19 2000-03-08 Toyota Jidosha Kabushiki Kaisha Solar battery
EP0984494A4 (en) * 1998-03-19 2001-05-09 Toyota Motor Co Ltd Solar battery

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