JPS59186325A - Dry etching device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dry cutting device (1), and more particularly to a dry cutting device (1) for semiconductor chips having a 1' screen formed on the surface thereof.

Two glue actors were installed to cover the semiconductor substrate with a mask formed on its surface by two-step C dry etching ('J).
The temperature of the dry processing equipment, which is designed to sequentially move wafers in and out of each reactor, is 1.1°C.

However, with this device, it is necessary to place the wafer on one electrode and open and close the reactor separately, and the narrow space inside the reactor (. Not only is there a possibility that it may be difficult to arrange it in the specified position,
It is necessary to complete the opening and opening of the 1--1 sequence and the opening and opening of the 1--1
The present invention has been made in view of the above-mentioned points, and its purpose is to improve the electrode structure on which the sample to be dry etched is attached. By configuring the body itself to move and sequentially form reactors, it is possible to minimize misalignment of the sample with respect to the electrode, and to form reactors sequentially in a short time. During the operating time of the device, the etching process ++i l!
! The ratio of l is increased by ii] and the effect is increased by 15", effect =;
The object of the present invention is to provide a dry stitching device that can be operated or operated in a convenient manner.

Next, the dry-[
Based on the drawing, the Tsubung device 1 is shown as β1.

In the figure, 2 is frame C of device 1, and frame 21JI
:Cylindrical lower room 3 lower frame; At this time, ; 1, 1, 4 and the lower frame 3 (from 1 to 17 members to the sealed chamber j) are formed. 6 is a vacuum pump for 1ζ'5.

7, 84: Formed integrally with the upper lid 4)
9゜ Case for 10 with ζ pa 11 is a container for introducing and sending out the sample 12, vacuum 11, load, lock, 'f I
7:, □β1 (() is the upper lid. Since 8 is formed in the same way, only the case 7 will be described in detail based mainly on FIG. 4T from the case body 14 in the shape of Adjust the positions of the electrode 16 and the 7c pole 16 in the C and D directions.
Adjuster (/) that adjusts the distance between the electrodes in the reactor 9
6 17 (There is an electrode 16 inside the reactor 9 to 17.)
an introduction passage 19 that introduces a reactive gas 18 such as CF, etc. through the reactor 9, and an introduction pipe 2 that can urgently introduce a gas such as N2 into the reactor 9, which is normally used in high vacuum, through a valve 20.
1, and a detector 22 for detecting the progress of etching of the sample 112. Incidentally, a detector 22 is installed in the reactor 9 of the reactors 9 and 10 (it may be possible to use a detector 22 to detect the etching process. 23 is a true chamber pump for the reactor 9, and 24 is a detector 22 for the reactor 9. 1 of palm 17], a force detector, pressure detector 24 and σ pump 23 (1%l+l)°C, etching treatment [1],
In order to keep the I-f force in the chamber 17 at
has been completed.

The 10L 101 of the Saidanogin container 10 is attached to the silling device 2 [;, which is attached to the Q'I,'I frame 25 fixed to R'#4 of the frame 2. It is supported so that it can be freely displaced in the direction.

Incidentally, the case 7.8 and the lid 11 are oriented by an angle 1α of 120 degrees with respect to the central axis of the frame 4.

2J 27.281, 1" Screw onto the F section frame 3 in the 11 direction around the central axis G of the lower frame 113.
It is a direc or electrode 41 signal body that is configured to be able to rotate in a 120 degree increments in the direction of C2L) and 7J, with the electrode (14) being able to move in the C2L and J directions.
i, 27.28 is an angle of 120 degrees to phase U with respect to the central axis G of the lower frame 3? It is set () at '1°. When the ribbed frame 4 forming the closed chamber 5 is superimposed on the lower frame 3, the central axes F and G coincide, and the electrode structures 26, 27, 28 are connected to each other.
with any of them.” F(C.

D direction).

For example, when the electrode structure 26 is located opposite to the lower end opening 29 of Kusuf and is displaced in the Dh direction to its upper end position, the electrode structure 26 airtightly contacts the lower end of the case 7 with its edge 30. The electrode structure 26 is displaced in the C direction to the C,jjj position (C) below.
The lower end 29 of the lifting platform and woofer 7 located at the position shown by the phantom line in FIG. 3 is in communication with the vacuum 4 and the electrode structure 2.
6 can be displaced in the H direction.

Furthermore, for example, the electrode structure 28 is on the container 10! , 11;
When located facing I4, the electrode structure 2Ji
7'j At the upper end position, either allow the introduction or delivery of the sample 12 (Fig. 4), or operate the upper lid 11 and 1 to perform the test. Container 13 and ゛(γ
W+'f+° (forming 12 in Fig. 5), the lower end position i;- in the C direction allows rotational displacement in the 11 direction (
Figure 6).

Next, details of the electrode structure and its displacement mechanism will be explained based on FIG. In addition, one electrode structure 16.17
The sides of the converter in the C and D directions of ゜18 and A are constructed in the same way, and will be explained below.

In FIG. 7, 33 (for example, the rigid frame of the electrode structure 26, 3
4 Ll, A I etc. J Lee'+'i: Rumi 4! I!
, 3! I, 3 [+ Ha% 4fl+ within 34)
Between 4 and 37, the cooling water line JJI port, 38 is Volite 1-Rafur Δ1゜11 Blend 6.7 J, S/'L insulation section,
39 is electrode 34 river terminal, 40 is electrode 'IB, afforestation 26
These are the screws 1 to the collar that stop the displacement in the D direction at a predetermined position. In addition, 41 is Den 41! i34 (Jl cover J, Uniden 44t, fixed on 34, tried in recess 42 1
12 is a quartz glass plate to be attached (/': made) as a small router. 43 is a displacement mechanism for displacing the electrode structure 26 in the direction C, l), and the displacement mechanism 6 is The mechanism 43 is a cylinder device 4 attached to the lower frame 3.
4. Expandable bushing rod 4 of cylinder device 44
When the rod 45 expands and contracts, it is displaced in the CD direction with respect to the lower frame 3, and as the rod 45 expands and contracts, it is displaced in the C direction with respect to the lower frame 3 by the stretching force of the spring 46. equipped rod 4
8, and an electrode structure 26 which is integral with the electrode structure 2G and is supported movably in the C and D directions by a bush 50 of a disk 49 that can be rotated in the G direction. is displaced in the D direction as the rod 48 is displaced in the D direction, and as the rod 8 is displaced in the C direction, the limit switch 52 or stopper 53 is moved to the specified position. It will be done.

Reference numeral 54 denotes a rotational displacement 1 bar that rotates the electrode structure 26, 27, 28 by 120 degrees around the central axis G when all of the electrode structures 26, 27, 28 are set in the lower position. j, jIj C available, rotating machine 14! i 4 I
II: ? 1iJi speed (including the large and rotation angle detector etc., the output shaft 55 rotates 120 degrees) and the lower frame 3
Rotation: Fll white (1), and the rotation of the output shaft 55 is connected to the C electric 4'4A 4M 1 piece 2 through the disk/1g.
G, 27.2 [1 large reaching axis machine 4'l'+! i8
It consists of Also, 5! i, G (l iJ, people'
1ll1 Mechanism Fault (passage 61, 62 and TiJ flexible rapid communication tube 64 [electrode 1t + r1 cooling σ via i5] supply/discharge hole 35, 36iJ 8 connected electrode structure 2G, 27.
Cold water Jl water supply for 28 1. Jl'r, ]. ((
6 (Seal ring, 67Ll, 1″! ■Bon 7′
There is a pa.

In the first cause and Fig. 8, 68 is the sample supply/discharge mechanism, iX
Diagonal feed 1 no 1 tl l#i 681J, 5 (,1
', :y Bunku place] 1! F-L '+: rl\ki test J'j112a is stored and d3 is intermittent (moved in the direction of C and moves to 15, Cale 1-69, Cale 1-69
The most 1/11th trial 1”l 12ay4 units 7 (l L
A bell h70a that supplies electricity intermittently and an electrode 't/'i 7M iho located at the delivery position opposite the soil anchor 11.
1. I-shaped glass plate 41-L, processed sample +
1121) to the stand 71, and at the same time transfer the untreated sample 12a on the stand 70 to a predetermined position on the quartz glass plate 41 of the electrode M4 structure located at the introduction position (same as the delivery position) directly under the upper lid 11. A belt 74 and a belt 74 that intermittently feed the cassette 73 which is intermittently moved in the D direction. s
In more detail, the transfer mechanism 12
Position J1 facing and covering the upper sample 12a, electrode (14) directly under the lid 11, position J2 facing the old body. and stand 71
1<, [rotatable in the direction, each position, ) 1, J2 . At J3, it can be displaced in the C and D directions. 75a and the shaft 75 to the movement control mechanism 76, and further uses the negative pressure accompanying the fluid flow to adsorb the sample J'112. 2'+1'l ftl11 Turn mechanism 11 to the right.

Whistle, movement control (76 is Tanabata, displacement device such as cylinder device, 11'100 million'' detection and controller such as IM, Hinilimitu 1 switch, etc.) An example of the 7141 frequency J-channel 1' power supply circuit 78 is as shown in FIG. 9. In FIG. −
■- High frequency power supply that covers the output of channel 1, 801J/
Invitance matching circuit, 81.82L, adjusted to German X'I- for 7kuku 9,10. Since the impedance of the circuit 781; L etching end point is detected because the impedance of the cutter 10 changes at the end point of the cutter (in the case of the example described below), the circuit 781; Used for.

-1] The end point of the tsuging is optically M'+ as described below.
f! If it comes out, it is preferable to take a heavy bath (79 Kasa for reactors 9 and 10 for 1 person! Separately explained).

Next, detect f! the degree of etching progress of Dry 1 Tuning Equipment 1. l:22(!- Progress including
, end point detection 1 + 717100 iJ followed by Figure 3 Noshi and Figures 10 to 15 r/I IL IU : Q Akira 1 Ro.

Detector 322t, L, reactor 9.10, installed in the same ()' ()1:) -C3, detector 22 is,
N O-N e-ray snow laser light source 83, lens 8
4 and reflector 85 tongue, J, rear, reactor 9,10
The beam 1F is irradiated almost perpendicularly to the surface of the sample 112 during the dosing process through the hole 16a of the electrode 1G. ″;112
Dora, I'2) 1 ng burek) Begi 1i87 each 0
Point J Koo [Noru surface 88-('s foul solo and depth N(
] Detect the intensity of the anti-IIJ4 light on the surface 901- of another layer 89 which is located below the layer 87 and is not to be etched through the half mirror 91.
Filter light (consisting of a light emitting device 92. The intensity of the received light or the output of the detector 92 generally changes as shown by the curve 93 in FIG. Meanwhile, the direction of the output light from the light projector 86 is changed to 1pz by changing the engagement position of the spherical surface 8Ga.

J Mata ten (゛ is approximately 7 in reactor 9 [1σ layer j) 7 is removed) 1.1, te -1 zing (), and the rest of layer 87 is ゛ pupped in reactor 10 as an example. =) progress status ■Nitasen structure 10 (la and end point detection (some structure 100 b
Details II will be explained. Monitor Ijlt (M 100a
Inside, 1) 4 is No. Glue Shifter Lid 9 and EJ
111 number of il 171J ru 51 number: X:, 95 is to 1 number answer counting! If G is the depth of the layer 87 to be etched with the first glue actor 9, :S +') 1 to 1
It is a comparator that compares with the corresponding set value QO and outputs a coincidence signal R at the time t1 when Q is equal to (, l O and I,:). , !J fi lj, a differentiating circuit that covers the output signal S (931) of the detector 921) attached to the second reactor 10;
31) Detection of Mountains 11.1 Each sampling 1 in the ring I at a given time interval sufficiently short than the interval 1
, differentiation at one point +] 98 is a sampling circuit that outputs the size Sl of the limped signal, and 98 is a sampling circuit that outputs the size Sl of the limped signal when it is determined that it is less than a given value Sio after being connected several times. , is an N% i:+j detection circuit which outputs a d3-C end signal Y at that time point 12. In addition, 99a
, 99b are stop control stations J:ii'-(for stopping the etching operation of the reactors 9, 10, respectively. In the above, the circuits 96, 97, 98 as a whole are configured to control, for example, the 1.r quantitative change of the curve 93b. How's it going l 2 (1)'
If it is possible to detect that C' changes after I'lii, then the other detectors 11ηC and 11. End point detection 1 In 1008, 1 is a method to extract Kyogen from a vacuum system or a high frequency power supply system by selecting an appropriate laser light source according to the type of reaction bamboo (, ↑, and the type of sample). With a high S/N ratio, it is possible to determine the end of one switching operation with a small number of signals.

The operation of the dry etching apparatus 1, which has been completed as described in Section 2 (h1), will be described in detail below.

Please read the following explanation] 7kuku! ], 10
(...J!, D, assuming that the two active buoys are ij "f; constant l), the edging strip 19 in reactors 9 and 10 is assumed to be 51.1%.
:J/d: So, J in reactor 9 (of layer 87, for example, about 70%) - of pharmacopoeia
``It is assumed that the twisting is not performed at high speed (・?), and the remaining soil digging of fR37 is performed precisely at low speed in the reactor 10.

Incidentally, the reactor 1'C is anisotropic +!, for example, in the reactor 9. 1's Rear Coon - Eve completed A', /J Tsubung 17, Reno Nokta 10 and Yuki no ° no' t! L's Bu, Nozma [Tubungu]) Hi-U-9, Reactor 9, 10 to the same part of trial or eyebrow part λiJ LC another 1: Rai 'Tubung 6: h-iji:' Also, if desired, for example, one layer 87 in reactor 9 may be removed in reactor 10 (in reactor 10).
Dry etching may be performed to remove 1. Furthermore, for example, can the container 13 also be formed as a reactor and three-step etching can be performed using the apparatus 1? ] You can do it like this.

In addition, in the following explanation, it is assumed that a polycrystalline silicon layer 87 is formed on the surface of the silicon wafer base layer 89 of the sample 12, and a mask 101 is formed on this polycrystalline silicon layer. An example in which the polycrystalline silicon layer 87 is etched according to the mask pattern 101 will be described, but the layer 87 to be etched may be a Si3N+ layer or a SiO2 layer instead of the polycrystalline silicon layer. In this example, since C is a Si-based one-touching, an example using CF as the reaction f1 gas 18 will be explained.
, C3Uy, C21T, i and other fluoride gases may be used.

Furthermore, as a reactive example, for example, CCI I'l C
When using the 01 series QiF or radical from the I3゜CI category,
Equipment 1 for dry etching of AI, Mo, W, Cr, etc.
Using -shiJ,i.

In addition, in the case of Sj-based etching, use a fluoride-based reactive gas, instead of f1 English glass 41 +, ff't
Other (Δ materials, e.g.
, A I2O3゜Volite 1 ~ Rahul / I'l + Cotylene etc. to form the covering portion 47 of the electrode 34 -CbJ,
1. When operating the cylinder device 1, C first loads the first cylinder L-J gun 1-HA 12a to each 2fi of the cylinder 1-69, and also uses the cylinder device 44 to energize it. (Circular structure jΔ body 284' 711th S1 <J':
t'+i! Roots＼ 4 ni 1 heaven daru ゛ 1 dog r imaginary I
Q placement thick, 1:', nfi frame 1-'r 4 down 81 tough frame lx 3, 1F towards the eye, 1 fort IVJ
Use the Bonzoro inside chamber 5 to turn the desired vacuum melon into the desired vacuum melon (J).
-Cj is added in accordance with 2. At this time, the electrode jIIi structure 2 afforestation 27 facing the goosef 8 is set, for example, at a lower position.

When the inside of chamber 5 reaches the specified degree of vacuum, Kazetsu 1 to 69
is displaced by a given amount in the direction C, and the silicon wafer 12a at the bottom (fl) comes into contact with the belt 70a''.

For example, after the cassette 69 is stopped, the belt 70a is driven, and the series 1 wafer 1211 on the bell l-70a is sent to the table 12a-i. After the belt 70a has stopped, the fluid flow allows it to be sucked; the release mechanism 77 is set at position J1, and if desired, is moved by a predetermined length or in the direction C, and then sucks the uyuha 12a. 1) Slightly moved in the h direction, and further up to position J2)
(i J 2 has a predetermined length (moved toward CB,
When the fluid flow is stopped at a position where the wafer 12a is close to the quartz gas plate 41, the r-plate 12a is released and the wafer 12a is just placed in the recess 42 of the plate 41. After 11, the mechanism 77 is slightly displaced in the D direction, and further moves from position J2 to position b! l J 1 or J3, for example position J3, is moved and stopped.

For example, after the #11 member 77 reaches position J3, the cylinder device 26 moves the L lid 11 into the upper loop as shown in FIG.
It is moved to the position where it hits l\4, and the sealed chamber 32
form. When the chamber 32 is sealed, the pipe 102 and the valve 103
The vacuum level of the chamber 5 is the same as that of the chamber 5 (32 is depressurized and the evaporation of the chamber 5 is completed, and the cylinder assembly !8?44 is connected to the electrode M?J). The afforestation 28 is displaced (L is shown) in the C direction as shown in FIG. 6 at the lower end position.

Once the electrode structure 28 is raised to a predetermined position, the mechanism 6 is driven and the electrode structure 26.27.2
8 is rotated around the axis G (120 degrees),
Electrode structures 2G, 27 and 28 are respectively in case 8. Top lid 1
1 and the case 7.

For example, at this time, electricity 4! Circulation of cooling water into the i-structures 26, 27, 28 is started.

This cooling water circulation may be adjusted independently for each electrode structure 26, 27, 28 to independently adjust the temperature of each sample.

After setting the rotation of the electrode structures 26, 27, 28, the cylinder device 44 directly below the person moves the electrode structures 27, 28 in the C direction to a position where they abut against the upper frame 4. Upon completion of this displacement, the electrode 4"'I with the wafer 12a mounted at a predetermined position on the case 7 side (t)
A reactor 0 having a sealed chamber 17 is formed, and the pressure inside the palm 17 is reduced to a given degree of vacuum by the pump 23.

When ¥17 reaches a given degree of vacuum, jCF+ is introduced as the reaction gas 18 through the tube 19 at a predetermined flow rate, and discharge is started between the electrodes 16 and 28 (34).

The ionization of CF and the reaction with the polycrystalline silicon layer 87 result in reactive ions of the layer 87. During this etching period, the degree of vacuum in the chamber 17 is maintained at a predetermined level (e.g., 10'-10-'-1 orr) using a pump 23 and a detector 24. It will be done. In addition, polycrystalline silicon li? The 1-twisting speed of i87 is, if desired, 79.5 between electrodes 16.21', (34). High-frequency power, room 17-1! η; Melon, Cl-4 introduced into chamber 11,
The flow rate (flow velocity) of ゛city 1f1. i IG, 28
(34) 1, which may be adjusted by the distance V between, in this case,
]-tuching speed in reactor 9 to reactor 1
For example, 2(, +'+
J, sea urchin tone yHq Shikokukasha (31,
During etching! l′! Zuru. Reactor 97: [
The progress of the Tubung is detected by the detector 22a (detected by the detector 22a).

In other words, the floodlight 86a for rear engine 9 is 1-
It was revealed to Ha12a...
1, the solid line 9 in Fig.
For example, the number of peaks QO corresponding to the thickness of the polycrystalline silicon layer 81 is 1]1 (for example, 1)1, /P=0.7>, Place number 1 as it progresses
::94 is revised v1, but at that point [1, the comparator 95 outputs the matching Shintan R, and the stop mechanism 99a outputs J,
2-switching in reactor 9 is stopped. It should be noted that if one etching speed polishing can be substantially reliably controlled, the depth of etching in the reactor 9 may be adjusted by the etching time. Also, during etching of Reno 7 Kuta 9C, almost at h1 number 94
The number of plants may be increased at a fixed time interval 't' - The cutting speed is 1σ4 and can be controlled in real time. 11 4M9! The high frequency [energy supply to the control of la (;guha, reactor τ) is stopped, and C
F+ supply is 171! - Look, there is also a U1 feeling in Bonn f23.

On the other hand, when the sealed chamber 17 is formed in the reactor 9, the same
, lr, interval] C' at 31 is electric (u7 (?4
In each of the parts 27 and 11, containers 13 to chambers 32 as shown in FIG. 5 are formed. C. While the °■-tweezing is being carried out in the renoctor 9, the electrode structure 2
At point 7, after the air 32 is brought to atmospheric pressure via the valve 103, the upper lid 1 is inserted into the cylinder 2G as shown in FIG.
1 is opened and as before C, wafer supply 4116
Jζri unpunished in 8! The J-C 12a is placed on the electrode structure 27, the L-L device is closed, and after exhaust by the ponzo 104, the electrode structure 27 is set in the cylinder 44 at the lower end position.

As described above, when the parts of the Lt electrode structure 21 - 1 to 12a of the Fi87 II - the peak part ζ depth Pl - C-1 - are turned, the upper electrode 411 and the rest 28 cylinder 44 It is moved once in the Ch direction to the lower end position.

When the front body 27 and 28 are set at the lower end position, 3
one electrode structure 2G, 27.28 again seven electrode structures 5
The electrode structure 2G, 27.28 is rotated in the direction of 11b by 120 degrees by G, and the upper lid 11,
Set in a position opposite the leases 7 and 8, the three electrode structures 26, 27, 28 are both displaced in the D direction until they come into close contact with the upper frame 4, respectively, and the containers 13. Reno'
9 and 10 are formed.

Thereafter, the unprocessed wafer 12a is placed on the electrode structure 26 in the same manner as described above, and after the jacket 11 is closed and all 32 are evacuated, the electrode structure 26 is lowered to the lower end position. For the wafer 12a on the electrode structure 27, -C is the depth Pl of the inclination of the layer 87 by the reactor 9 as before.
Etching is performed simultaneously in parallel.

Furthermore, the polycrystalline silicon layer 87 of T-C 12 is formed on the electrode structure 28 which cooperates with the Koos 8 to form the reactor 10.
For the high frequency energy supplied, degree of vacuum, CF
Reactive ion etching is performed at a slower etching speed than in reactor 9 by adjusting the flow ω, the distance between electrodes, etc. in step 4. When etching the polycrystalline silicon FJ87 from a depth of about P1 to a depth of P1, the photodetector 921 of the photodetector 921)
Then, the output as shown in the curve 931) in FIG. The interval T between the peaks of this output is 11 of the output in Figure 13.
For example, if there are 2 A, 8 culms, and 1 A, the reactor 10 will require about 2 A R intervals to perform the same depth of 1 K, 1, and 1 Q:). In order to slow down the speed of the reactor 10, the polycrystalline series 87's - Tubung has just been completed.
In this case, it is actually possible to stop the topching without damaging the silicon crystal layer 89. Detection of this end point is carried out by, for example, the differential circuit 96 as described in 1) a. Zumbling cycle 'M9r, J' is made to the finality detection circuit 98.

When the end point detection circuit 98 outputs the e signal U, the stop side 61
11! Sugi! 19b (7) After the control 'l'C''J actor 10's release ffi, Or+ supply, vacuum 1/1 air, etc. are stopped, the electrode structure 28 is connected to the -F end by the cylinder 44 directly under A. 11/; I can get 0 hands now.

Incidentally, at this stage, the electrode structure 26 is
a mounting of the layer 18 of the wafer 12a on the electrode structure 27
7 by the reactor 9, and the remaining part of f'i87 of the wafer 12 on the electrode structure 28 by the reactor 10, and the etching is completed by detecting the end point. Since termination and termination are performed simultaneously, the processing speed and processing capacity of the device 1 is large. Since the etching speed in the first-stage adhesive reactor 9 is increased, most of the layers 87 in the reactor 9 are etched in a similar amount of time.
Etching process JA can be performed, one etching process can be performed slowly in the reactor 10 within this time, and the etching process can be reliably stopped at the end point. Since the end point can be detected reliably on the reactor 10 side, the depth of one plunging in the reactor 9 does not have to be very accurate,
The etching speed of (person 'a'-, sh'+!f, substantially (J average 1 cutting speed 1α is increased by 1!7).

Next, history (J, electric 4-wheel structure 2B, 27.2B/Ji
j2 to the sky and i°5 within 11]) direction 1201α is given; 3. This one thread,
The electrode structure 26-1 facing the lease 7 is subjected to a 12n λ. Ruden! 'Ir 4f Yuzo 1 Ho 27 upper part 1 - Ha 12, first reactor 10 (go, 1, β second stage's 1 ring treatment prefecture is simultaneous iltl fishing n6') ( Then, these two 4-f-ing processes simultaneously, ) r1 line,
Jilp of electric 4~structure 281-notsu [-c121]
And the device of the electrode structure 281/＼1-c 1221 is carried out for one step] and the second step d3.

As shown in FIG. When the IJS state is reached, the earth embankment 11 is lifted up by the cylinder device 2G as shown in FIG.

h , i', r I The upper bound of I T is completed, the trial landing paddle 77 is set to I1''?-1, )2, is displaced downward, and the fluid flow is After sucking up the processed part 21 on the electrode structure 28 with the corner part and returning it upward, it is displaced in the direction of the horn from position J2/J to position J3.The position J3 is reached. (7I, second contact, shield mechanism 77 is moved slightly downwards if desired, and then removed by cessation of fluid flow)
- Grow the 1211 and place it on the table 71-1:. The belt 74 is driven and the belt 74 is sent from the table 71 to a predetermined stage of the cassette 73. Wafer 121]
After the cassette 73 is stored in a predetermined position, the cassette 73 is moved to the sword itself by a predetermined length of one stage. On the other hand, after arriving Mm M477 and J-Ha12beMl,
The new I
-Place the 12a on the head (predetermined 1 of the structure 28)/neck. New・'ノ1-HA12a Y'A M'L'
14. Using the same procedure as above, prepare electrode 1 (lj structure).
8 is lowered to the lower II''! position.

This, 1, sea urchin, cassette 69 soil]-ha 12a
Parallel processing continues until cassettes I to 69 are loaded. J, rutsu 1-ha 12a? Q l; Fast to the presence or absence of if, in the last 3 steps, the operation of the feed 1] 1 machine + f468, the processing in reactor 9, and the processing in reactor 10 are sequentially stop 1
! -ζ Let's go CG J, yes.

The above control of the device 1 is carried out while monitoring on the console etc. ``Uh, I: 51.

In addition, although the explanation was given in the example in which two odor actors were installed, 17 kuku (17 kuku) were added to 12 containers 1.
In this case, if the number of reactors J is one more than the number of reactors, if the bodies are formed equally spaced around the circumference, good.

In addition, when the electrode structure is sent by a chain or the like, the reactors and the like do not necessarily have to be arranged on one circumference.

From here on, in the apparatus 61, the output 12 is
Therefore, there is less risk that the machining conditions will become unstable due to the influence of outside air, and the adjustment of the true Isofσ can be kept to a minimum and the throughput can be increased.

Container (Ronido Lok Chitomba) 13. reactor
Since 9 and 10 are located on the circumference, the device can be formed in a compact manner. 1Jζ sea urchin (f4
Because of this structure, the number of times the wafer is attached to the electrode is greatly reduced, the cost of silicon refilling is minimized by 19%, and rib micron shield microfabrication is easy to perform.

As described in 1-1 below, the trial T-touching device C' of the present invention is as follows.

An electrode structure that is moved between at least two cases, with the counter electrode to which the sample to be tested is mounted, is set in a predetermined position opposite each case. When this happens, I collide with the opposing case and doshir2.
Opening of the opposing case to form a reactor for tzing;
1: Since the electrode structure is constructed such that the electrode structure is placed one on top of the other, the -f device is efficient if only the displacement of the position of the sample relative to the electrode is suppressed. was driven by
'do.

[Brief explanation of the drawing]

FIG. 1 is a partially broken oblique view of a dry etching apparatus according to a preferred example of the present invention. FIG. 2 is an explanatory view of the apparatus shown in FIG. 33 is an explanatory cross-sectional view of the actuator of the apparatus shown in FIG. is a cross-section of the electrode structure changing fq machine 4j11 of the device shown in FIG. An explanatory diagram of an example of the power supply circuit of the reactor of the device, 1st
Figure 0 is an explanatory diagram of the light projection system of the device in Figure 1, and Figure 11 is an explanatory diagram of the light projection system of the device in Figure 1.
Explanatory diagram of the light receiving system seen from the X'I-XJ cross section of Figure 0, No. 12
The figure is an explanatory diagram of the detection of test s'l 1 nidging preparation situation,
Figures 13 and 14 are explanatory diagrams of an example of the output of one photodetector and an output of a differential circuit (for example, a two-line etching progress monitor and end point detection), and Figure 15 is an illustration of an etching progress monitor and end point detection (1). It is an explanatory view of a mechanism. 7.8... Case, 9, 10... Reactor, 12, 12a,' 121)... Sample,
1G, 34... Electrode, 26, 27.28...
...Electrode structure. Midsummer -← Ward Ward Law ＼ ＼O

Claims (1)

[Scope of Claims] Two leases, each of which has 1 discharge electricity 1, 12, and which are open to people, and 52 nonono leases: Between the electrodes (with a hyperactive C, and the counter electrode to which the sample to be dry 1 is attached is placed on the right ηa), there is an electric (^j li/, structure, etc.), and this electrode (j4 structure is attached to each case). Facing specified position 1N
When set to 1, it is hermetically fitted to the open end of the opposite case to form a dry gop in cooperation with the λ1 direction woofer. ”, the electrode structure is (14
Dry 1 tweezing device.