JPS59145216A - Organic solvent-soluble photosensitive polyamide-imide - Google Patents

Organic solvent-soluble photosensitive polyamide-imide

Info

Publication number
JPS59145216A
JPS59145216A JP1858783A JP1858783A JPS59145216A JP S59145216 A JPS59145216 A JP S59145216A JP 1858783 A JP1858783 A JP 1858783A JP 1858783 A JP1858783 A JP 1858783A JP S59145216 A JPS59145216 A JP S59145216A
Authority
JP
Japan
Prior art keywords
imide
polyamide
dianhydride
organic solvent
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1858783A
Other languages
Japanese (ja)
Inventor
Tsunetomo Nakano
中野 常朝
Hiroshi Yasuno
安野 弘
Kazuaki Nishio
一章 西尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ube Corp
Original Assignee
Ube Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries Ltd filed Critical Ube Industries Ltd
Priority to JP1858783A priority Critical patent/JPS59145216A/en
Publication of JPS59145216A publication Critical patent/JPS59145216A/en
Pending legal-status Critical Current

Links

Landscapes

  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

PURPOSE:The titled photosensitive polyamide-imide excellent in heat resistance, electrical properties, and mechanical properties, prepared by polymerizing an aromatic tetracarboxylic acid with a specified aromatic diamine compound having a cinnamamide bond, and imidating the product. CONSTITUTION:An aromatic tetracarboxylic acid (dianhydride), e.g., 3,3',4,4'- biphenyltetracarboxylic acid, is polymerized with an aromatic diamine compound of the formula (e.g., 4,4'-diaminocinnamanilide) at about 100 deg.C or below for about 1-48hr in an organic solvent (e.g., N,N-dimethyl sulfoxide). The produced polyamide-imide precursor solution is diluted with an organic solvent and, after adding an imidating agent (acetic anhydride or pyridine), heated to about 100 deg.C or below for above 0.5-5hr to imidate the precursor into the purpose polyamide- imide.

Description

【発明の詳細な説明】 本発明は、感光基を含有する新規なポリアミドイミド、
詳しくは、耐熱性、電気的及び機械的性質に優れ、半導
体工業における固体素子への絶縁膜やパッシベーション
膜の形成材料、及び半導体の集積回路や多層プリント配
線板などの眉間絶縁材料等として好適な、有機溶媒可溶
性の感光性ポリアミドイミドに関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a novel polyamideimide containing a photosensitive group,
Specifically, it has excellent heat resistance, electrical and mechanical properties, and is suitable as a material for forming insulating films and passivation films on solid-state devices in the semiconductor industry, and as an insulating material for semiconductor integrated circuits, multilayer printed wiring boards, etc. , relates to an organic solvent soluble photosensitive polyamideimide.

半導体工業における固体素子への絶縁膜やバ・7ンー\
−ンヨン膜の形成材料、及び半導体集積回路や多層プリ
ント配線板などの層間絶縁材料は、耐17J5性及び絶
縁性に冨むことが要請される。斯る観点から、上記のバ
ンシベーション膜等を、絶縁性と共に耐熱性の高いポリ
イミドで形成することが種々提案されている(特開昭4
9−115541彎公報、特開昭54−116216号
公報、特開昭54−116217号公報及び特開昭56
−45915号公報等参照)。
Insulating films and bars for solid-state devices in the semiconductor industry
- Materials for forming layer layers and interlayer insulating materials for semiconductor integrated circuits, multilayer printed wiring boards, etc. are required to have high resistance to 17J5 and high insulation properties. From this point of view, various proposals have been made to form the above-mentioned bancivation film etc. with polyimide, which has high heat resistance as well as insulation properties (Japanese Patent Laid-Open No. 4-1199).
9-115541, JP-A-54-116216, JP-A-54-116217, and JP-A-Sho 56
(Refer to Publication No.-45915, etc.).

しかし、一般にこれらのうちポリイミドを用いたものは
、熔媒不熔性で感光基を有しておらず、−上述の提案に
おいては、感光基を含有するポリマーは、何れもポリイ
ミド前駆体であるポリアミック酸のカルボン酸をアミド
化、エステル化など変性した形であり、ポリアミック酸
を光硬化時にポリイミドとしたり、光硬化後ポストベー
クしてポリイミドとする必要がある。
However, among these, those using polyimide are generally solvent-infusible and do not have photosensitive groups, and in the above proposal, all polymers containing photosensitive groups are polyimide precursors. It is a modified form of carboxylic acid of polyamic acid such as amidation or esterification, and it is necessary to convert polyamic acid into polyimide during photocuring or post-baking after photocuring to form polyimide.

また、耐熱性に優れている芳香族ポリイミドは一般に溶
媒に対する溶解性が劣るので、光硬化後未露光部を有機
溶媒に熔解させる工程を含むレリーフパターンの形成に
は適さない。
Furthermore, aromatic polyimides, which have excellent heat resistance, generally have poor solubility in solvents, and therefore are not suitable for forming relief patterns, which include a step of dissolving unexposed areas in an organic solvent after photocuring.

また、半導体工業における固体素子への絶縁膜やバッシ
ヘーション膜の形成材料、及び半導体集積回路や多層プ
リント配線板などの層間絶縁材料として、種々の感光性
ポリアミトイミドが提案されている。
In addition, various photosensitive polyamide imides have been proposed as materials for forming insulating films and bashing films on solid-state devices in the semiconductor industry, and as interlayer insulating materials for semiconductor integrated circuits, multilayer printed wiring boards, and the like.

しかし、これらの感光性ポリアミドイミドの多くは、そ
の酸成分としてトリメリット酸無水物がもちいられ、ジ
アミン化合物との重縮合によりポリアミドイミドを製造
した後、該ポリアミドイミドのアミドの活性水素を感光
基に置換して製造されたものであり(特開昭54−89
623号公報等参照)、この置換反応は高分子反応によ
るため、ポリアミドイミドに所定量の感光基を常に導入
することがゲ「しい。
However, in many of these photosensitive polyamide-imides, trimellitic anhydride is used as the acid component, and after producing polyamide-imide by polycondensation with a diamine compound, the active hydrogen of the amide of the polyamide-imide is converted into a photosensitive group. (Japanese Patent Application Laid-Open No. 1989-89)
Since this substitution reaction is based on a polymer reaction, it is desirable to always introduce a predetermined amount of photosensitive groups into the polyamideimide.

そこで、重縮合時に感光基を含むものどうしで反応させ
てイミド基を有する側鎖のあるポリアミドを得ようとす
る試みが提案されているが(特開昭53−5298号公
叩参照)、この方法によってHられるポリアミドは主鎖
にアミド結合しか有さないので耐熱性が十分ではない。
Therefore, an attempt has been proposed to obtain a polyamide with a side chain containing an imide group by reacting materials containing photosensitive groups during polycondensation (see Japanese Patent Application Laid-Open No. 53-5298). The polyamide that is hydrogenated by this method has only amide bonds in its main chain and therefore does not have sufficient heat resistance.

本発明者等は、上述の現状に鑑み、耐熱性、電気的及び
機械的性質に優れたレリーフパターンを容易に形成し得
る、感光性樹脂を提供することを目的として種々検問し
た結果、芳香族テトラカルボン酸またはその二無水物と
シンナムアミド結合をイjする特定の芳香族ジアミン化
合物とから得られる芳香族ポリアミドイミドが、感光性
を有し且つ有機溶媒可溶性であり、−F記目的を達成し
得ることを知見した。
In view of the above-mentioned current situation, the present inventors conducted various investigations with the aim of providing a photosensitive resin that can easily form a relief pattern with excellent heat resistance, electrical and mechanical properties, and found that aromatic An aromatic polyamideimide obtained from a tetracarboxylic acid or its dianhydride and a specific aromatic diamine compound having a cinnamamide bond is photosensitive and soluble in an organic solvent, and achieves the objective described in -F. I found out that I can get it.

17+1ち、本発明は、上記知見に基づきなされたもの
で、芳香族テトラカルボン酸またはその二無水物と、下
記−・般式(■)で表される芳香族ジアミン化合物とを
重合・イミド化することによって得られる、有機溶媒可
溶性の感光性ポリアミドイミドを提イ共するものである
17+1 The present invention was made based on the above findings, and involves polymerizing and imidizing an aromatic tetracarboxylic acid or its dianhydride and an aromatic diamine compound represented by the following general formula (■). The present invention also provides an organic solvent-soluble photosensitive polyamideimide obtained by this method.

本発明のポリアミドイミドは、主鎖に感光性の不飽和結
合および耐熱性のアミド−イミド°結合を有するので、
高い感光性と共に高い耐熱性を有し、有機溶媒可溶性お
よび種々の光重合開始剤と可溶性であるためレリーフパ
ターンの形成に極めて好適である。
Since the polyamide-imide of the present invention has a photosensitive unsaturated bond and a heat-resistant amide-imide ° bond in the main chain,
It has high photosensitivity and high heat resistance, and is soluble in organic solvents and various photopolymerization initiators, making it extremely suitable for forming relief patterns.

本発明のポリアミトイでドは、感光性ポリアミック酸(
ポリイミド前駆体)のようにイミド化工程を必要としな
いために、工程の簡略化のみならず、素子への熱的影響
や収縮による歪や応力を与えることがないなどの効果も
ある。
The polyamide of the present invention is a photosensitive polyamic acid (
Since it does not require an imidization step unlike polyimide precursors, it not only simplifies the process, but also has the effect of not applying distortion or stress due to thermal effects or shrinkage on the device.

以下に本発明の感光性ポリアミドイミドについてその合
成法と共に詳述する。
The photosensitive polyamideimide of the present invention will be described in detail below along with its synthesis method.

本発明の感光性ポリアミドイミドは、例えば、芳香族テ
トラカルボン酸またはその二無水物と、前記一般式(1
)で表される、シンナムアミド結合を有する芳香族ジア
ミン化合物とを重合してポリアミドイミド前駆体となし
、更に該ポリアミドイミド前駆体を脱水閉環する(イミ
ド化)ことにより合成される。
The photosensitive polyamideimide of the present invention can be prepared by combining, for example, an aromatic tetracarboxylic acid or its dianhydride and the general formula (1).
) is synthesized by polymerizing an aromatic diamine compound having a cinnamamide bond to obtain a polyamideimide precursor, and further dehydrating and ring-closing the polyamideimide precursor (imidization).

本発明の感光性ポリアミドイミドの合成に用いられる」
二記芳香族テトラカルボン酸またはその二無水物として
は、具体的には3.3’ 、4.4’−ビフェニルテト
ラカルボン酸、またはその二無水物、2,2”、3.3
’  −ビフェニルテトラカルボン酸、またはその二無
水物、2.3.3”。
"Used for the synthesis of the photosensitive polyamideimide of the present invention"
Specific examples of the diaromatic tetracarboxylic acid or its dianhydride include 3.3', 4.4'-biphenyltetracarboxylic acid or its dianhydride, 2,2", 3.3"
'-Biphenyltetracarboxylic acid, or its dianhydride, 2.3.3''.

4゛−ビフェニルテトラカルボン酸、またはその二無水
物、2,3.3’ 、4’−ベンゾフェノンテトラカル
ボン酸、またはその二無水物、3,3’、4.4’−ベ
ンゾフェノンテトラカルボン酸酸、またはその二無水物
、及びピロメリット酸、またはその二無水物があげられ
、上記テトラカルボ′       ン酸のエステル化
物、塩などでもよいが、特にビフェニルテトラカルボン
酸二無水物が好ましい。
4'-biphenyltetracarboxylic acid or its dianhydride, 2,3,3',4'-benzophenonetetracarboxylic acid or its dianhydride, 3,3',4,4'-benzophenonetetracarboxylic acid or its dianhydride, and pyromellitic acid or its dianhydride, and may also be an esterified product or salt of the above tetracarboxylic acid, but biphenyltetracarboxylic dianhydride is particularly preferred.

また、前記一般式(I)で表される芳香族ジアミン化合
物としては、具体的には次のものをあげることができる
Further, specific examples of the aromatic diamine compound represented by the general formula (I) include the following.

4.4“−−m−ジアミノシンナムアニリド、3゛。4.4"--m-diaminocinnamanilide, 3".

4−ジアミノシンナムアニリド、3.4′−ジアミノシ
ンナムアニリド、3.3°−ジアミノシン・ナムアニリ
ド、2,2°−ジアミノシンナムアニリドなど、及び上
記芳香族ジアミン化合物のベンゼン環の水素がメチル基
で置換されたもの、例えば4°−メチル−3“、4−ジ
アミノシンナムアニリドなど。
4-diaminocinnamanilide, 3,4'-diaminocinnamanilide, 3.3°-diaminocinnamanilide, 2,2°-diaminocinnamanilide, etc., and the above aromatic diamine compounds in which the hydrogen of the benzene ring is methyl. Those substituted with groups, such as 4°-methyl-3'', 4-diaminocinnamanilide.

本発明の感光性ポリアミドイミドは、ポリアミドイミド
0.5g/N−メチル−2−ピロリドン100m1の濃
度の溶液として30℃において測定した対数粘度が0.
1〜1.5特に0.2〜1.0の範囲内にあるものが好
ましい。
The photosensitive polyamide-imide of the present invention has a logarithmic viscosity of 0.5 g measured at 30°C as a solution having a concentration of 0.5 g of polyamide-imide/100 ml of N-methyl-2-pyrrolidone.
It is preferably within the range of 1 to 1.5, particularly 0.2 to 1.0.

本発明のポリアミドイミドの合成について更に説明する
と、合成する際の上記芳香族テトラカルボン酸またはそ
の二無水物と上記芳香族ジアミン化合物との使用割合は
略等モルであり、それらの合成反応は、比較的低温下に
、先ず重合反応を行わせ、次いでイミド化反応を行わせ
る二段階反応によるのが好ましい。
To further explain the synthesis of the polyamideimide of the present invention, the aromatic tetracarboxylic acid or its dianhydride and the aromatic diamine compound are used in approximately equimolar ratios during synthesis, and their synthesis reaction is as follows: It is preferable to carry out a two-step reaction in which a polymerization reaction is first carried out and then an imidization reaction is carried out at a relatively low temperature.

即ち、先ず、有機溶媒中で100℃以下、好ましくは8
0℃以下の反応温度で1〜48時間重合反応を行い、次
いで、この重合反応によって得られるポリアミドイミド
前駆体溶液を有機溶媒で希釈した後、100℃以下、好
ましくは80℃以下の反応温度で無水酢酸、ピリジン、
第り級アミ、ンなとのイミド化剤を加えて0.5〜5時
間イミド化反応を行うのが好ましく、その結果本発明の
ポリアミドイミドが合成される。
That is, first, the temperature is lower than 100°C, preferably 8°C in an organic solvent.
A polymerization reaction is carried out at a reaction temperature of 0°C or lower for 1 to 48 hours, and then, after diluting the polyamideimide precursor solution obtained by this polymerization reaction with an organic solvent, the polymerization reaction is carried out at a reaction temperature of 100°C or lower, preferably 80°C or lower. acetic anhydride, pyridine,
It is preferable to add an imidizing agent such as a tertiary amine or monomer to carry out the imidization reaction for 0.5 to 5 hours, and as a result, the polyamide-imide of the present invention is synthesized.

上記重合反応及び上記イミド化反応における有機溶媒と
しては、例えばN、N−ジメチルスルホキシト−1N、
N−ジメヂルボルムアミド、N、 N−ジエチルボルム
アミド、N、N−ジメチルアセトアミド、N、N−ジエ
チルアセトアミド、N−メチル−2−ピロリドン、ヘキ
サメチルホスホアミドなどが用いられる。
Examples of the organic solvent in the polymerization reaction and the imidization reaction include N,N-dimethylsulfoxide-1N,
N-dimethylborumamide, N,N-diethylborumamide, N,N-dimethylacetamide, N,N-diethylacetamide, N-methyl-2-pyrrolidone, hexamethylphosphoramide, and the like are used.

尚、本発明のポリアミドイミドは、前記芳香族テトラカ
ルボン酸またはその二無水物と前記芳香族ジアミン化合
物とを有機溶媒中で100℃以上の高?Rにおいて一段
階で重合・イミド化反応を行うことによっCも合成する
ことができるが、前述の如く、二段階で行うことにより
、安定した生成物を得ることができる。
Incidentally, the polyamide-imide of the present invention is prepared by combining the aromatic tetracarboxylic acid or its dianhydride and the aromatic diamine compound in an organic solvent at a temperature of 100°C or higher. Although C can also be synthesized by carrying out the polymerization/imidization reaction in one step in R, a stable product can be obtained by carrying out the reaction in two steps as described above.

而して、本発明の感光性ポリアミドイミドは、レリーフ
パターンの形成材料として使用する場合、有機溶媒に熔
解された溶液として用いられる。
When the photosensitive polyamideimide of the present invention is used as a material for forming a relief pattern, it is used as a solution dissolved in an organic solvent.

この有#B、溶媒としては、N、N−ジメチルホルムア
ミド、N、N−ジエチルホルムアミド、N、  N−ジ
メチルアセトアミド、N、N−ジエチルアセトアミド、
N−メチル−2−ピロリドン、ジメチルスルホキシド、
ヘキサメチルホスホアミドなどをあげることができ、感
光性ポリアミドイミド熔′液の好ましい濃度は5〜30
%である。
This #B, as a solvent, N,N-dimethylformamide, N,N-diethylformamide, N,N-dimethylacetamide, N,N-diethylacetamide,
N-methyl-2-pyrrolidone, dimethyl sulfoxide,
Examples include hexamethylphosphoamide, and the preferred concentration of the photosensitive polyamideimide melt is 5 to 30.
%.

また、上記の感光性ポリアミドイミド溶液に、必要に応
じ、増感剤及び光重合開始剤やエチレン性不飽和基を有
する光により重合可能な化合物を添加させることができ
る。
Furthermore, a sensitizer, a photopolymerization initiator, and a light-polymerizable compound having an ethylenically unsaturated group can be added to the photosensitive polyamide-imide solution, if necessary.

上記増感剤及び光重合開始剤としては、ミヒラーズケト
ン、ベンゾイン、ベンゾインメチルエーテル、ヘンジイ
ンエチルエーテル、ヘンジインイソプロビルエーテル、
2−t−ブチルアントラキノン、1,2−ベンゾ−9,
10−アントラキノン、4.4’  −ビス(ジエチル
アミノ)ヘンゾフエノン、アセトフェノン、ベンゾフェ
ノン、チオキサントン、1.5−アセナフテン、N−ア
セチル−4−ニトロ−1−ナフチルアミンなどをあげる
ことができ、またその添加量は感光性ポリアミドイミド
100重量部に対して0.1〜10重量部が好ましい。
Examples of the sensitizer and photopolymerization initiator include Michler's ketone, benzoin, benzoin methyl ether, hendiine ethyl ether, hendiine isopropyl ether,
2-t-butylanthraquinone, 1,2-benzo-9,
Examples include 10-anthraquinone, 4,4'-bis(diethylamino)henzophenone, acetophenone, benzophenone, thioxanthone, 1,5-acenaphthene, N-acetyl-4-nitro-1-naphthylamine, and the amount added. It is preferably 0.1 to 10 parts by weight per 100 parts by weight of the photosensitive polyamideimide.

また、上記エチレン性不飽和基を有する光により重合可
能な化合物としては、エチレングリコールジ(メタ)ア
クリレート、プロピレングリコールジ(メタ)アクリレ
ート、ポリプロピレングリコールジ(メタ)アクリレー
ト、)・ルメチロールブロバントリ (メタ)アクリレ
ート、テトラメチロールメタンテトラ(メタ)アクリレ
ート、N。
In addition, examples of the photopolymerizable compounds having ethylenically unsaturated groups include ethylene glycol di(meth)acrylate, propylene glycol di(meth)acrylate, polypropylene glycol di(meth)acrylate, ), rumethylolbrobantri( meth)acrylate, tetramethylolmethanetetra(meth)acrylate, N.

N” −メヂレンビス(メタ)アクリレート、ジエチル
アミノエチル(メタ)アクリレートなどをあげることが
できる。
Examples include N''-methylenebis(meth)acrylate and diethylaminoethyl(meth)acrylate.

本発明の感光性ポリアミドイミドによれば、上記の如く
感光性ポリアミドイミド溶液を調整することにより次の
ようにしてレリーフパターンを形成することができる。
According to the photosensitive polyamideimide of the present invention, a relief pattern can be formed in the following manner by adjusting the photosensitive polyamideimide solution as described above.

即ち、まず、上記の感光性ポリアミドイミド溶液を基板
に塗布し、これを乾燥して有機溶媒を除去する。基板へ
の塗布は、例えば回転塗布機−で行うことができる。塗
布膜の乾燥は150℃以下、好ましくは100℃以下で
行う。この際減圧はしてもしなくてもよい。乾燥後、塗
布膜にネガ型のフォトマスクチャートを置き、紫外線、
可視光線、電子線、X線などの活性光線を照射する。次
いで未露光の部分を現像液で洗い流すことによりポリア
ミドイミドのレリーフパターンを得る。上記の現像液と
しては、N、N−ジメチルホルムアミド、N、N−ジメ
チルアセトアミド、ジメチルスルホキシド、N−メチル
−2−ピロリドン、ヘキサメチルホスホアミドなどの溶
剤又は該溶剤とメタノール、エタノールとの混合系を用
いることができる。
That is, first, the above-mentioned photosensitive polyamideimide solution is applied to a substrate and dried to remove the organic solvent. Coating onto the substrate can be performed using, for example, a rotary coater. The coating film is dried at a temperature of 150°C or lower, preferably 100°C or lower. At this time, the pressure may or may not be reduced. After drying, place a negative photomask chart on the coated film and expose it to ultraviolet light,
Irradiate with active light such as visible light, electron beams, and X-rays. The unexposed areas are then washed away with a developer to obtain a polyamide-imide relief pattern. The above developer may be a solvent such as N,N-dimethylformamide, N,N-dimethylacetamide, dimethylsulfoxide, N-methyl-2-pyrrolidone, or hexamethylphosphoamide, or a mixture of the solvent and methanol or ethanol. can be used.

上述の如く、本発明の感光性ポリアミドイミドは、芳香
族テトラカルボン酸またはその二無水物と、シンナムア
ミド結合を有する前記一般式(I)で表される芳香族ジ
アミン化合物とを重合・イミl−化して得られるもので
あるから、ポリマーの主鎖中に所定量の感光基(光重合
可能な基)を有し、且つ有機溶媒に可溶であるため、光
化学的手段によってレリーフパターンを容易に形成する
ことができ、そして、レリーフパターンを形成する場合
、本発明のポリアミドイミドは、感光性と共に高い耐熱
性を有し、感光性ポリアミック酸(ボリイミ1′前駆体
)のようにイミド化工程を必要としないため、工程の簡
略化のみならず、素子への熱的影響や収縮による歪や応
力を与えることがないなどの多くの優れた効果がある。
As described above, the photosensitive polyamideimide of the present invention is produced by polymerizing and imitating an aromatic tetracarboxylic acid or its dianhydride and an aromatic diamine compound represented by the general formula (I) having a cinnamamide bond. Because it is obtained by polymerization, it has a predetermined amount of photosensitive groups (photopolymerizable groups) in the main chain of the polymer, and is soluble in organic solvents, so it is easy to create relief patterns by photochemical means. When a relief pattern is formed, the polyamideimide of the present invention has high heat resistance as well as photosensitivity, and can be easily subjected to an imidization process like photosensitive polyamic acid (polyimide 1' precursor). Since this is not necessary, it not only simplifies the process, but also has many excellent effects such as no thermal influence on the element, no strain or stress due to shrinkage, etc.

しかも、本発明の感光性ポリアミドイミドにより形成し
たレリーフパターンは、耐熱性、電気的及び機械的に優
れたものであり、半導体工業におりる固体素子の絶縁体
膜やパッシベーション膜として有効であ゛るばかりでな
く、ハイブリッド回路やプリント回路の多層配線構造の
絶縁膜やソルダーレジストとして用いる、二とができる
Furthermore, the relief pattern formed using the photosensitive polyamide-imide of the present invention has excellent heat resistance, electrical properties, and mechanical properties, and is effective as an insulating film or a passivation film for solid-state devices in the semiconductor industry. It can also be used as an insulating film or solder resist for multilayer wiring structures in hybrid circuits and printed circuits.

以下゛に、本発明の感光性ポリアミドイミドの合成を示
す実施例及び本発明の感光性ポリアミトイ・ミドの効果
を示す種々の物性試験及びその結果を挙げる。
Examples illustrating the synthesis of the photosensitive polyamideimide of the present invention and various physical property tests showing the effects of the photosensitive polyamideimide of the present invention and their results are listed below.

実施例I N−メチル−2−ピロリドン(NMP)5.2mlに2
.3,3” 4′−ビフェニルテトラカルボン酸二無水
物710mgと3′、4−ジアミノシンナムアニリド6
10mgを加え、30℃で5時間攪拌して反応させポリ
アミック酸を得た。
Example I 2 in 5.2 ml of N-methyl-2-pyrrolidone (NMP)
.. 710 mg of 3,3"4'-biphenyltetracarboxylic dianhydride and 6 of 3',4-diaminocinnamanilide
10 mg was added, and the mixture was stirred and reacted at 30° C. for 5 hours to obtain polyamic acid.

次に、NMP19.4mlを加え、ポリアミック酸゛を
希釈したのちに無水酢酸5.0g、ピリジン1.9g、
ベンゼン3.’8ml及びNMP3.2mlを加え、5
0℃で2時間反応させアミドイミド化物を得た。
Next, after adding 19.4 ml of NMP and diluting the polyamic acid, 5.0 g of acetic anhydride, 1.9 g of pyridine,
Benzene 3. ' Add 8 ml and 3.2 ml of NMP,
The mixture was reacted at 0° C. for 2 hours to obtain an amide imide compound.

アミドイミド化物溶液中にメタノールを滴下して加え、
ポリアミドイミドを析出させ濾別して、黄色のポリアミ
ドイミド粉末(本発明のポリアミドイミド)を得た。
Add methanol dropwise into the amide imidide solution,
Polyamideimide was precipitated and separated by filtration to obtain yellow polyamideimide powder (polyamideimide of the present invention).

実施例2 実施例1で用いた3゛、4−ジアミノシンナムアニリド
の代わりに、3,4゛−ジアミノシンナムアニリドを用
いた以外は実施例1と同様にして7        本
発明のポリアミ[°イミドを得た。
Example 2 Polyamide [° I got imide.

実施例3 実施例1で用いた3′、4−ジアミノシンナムアニリド
の代わりに、4“−メチル−3’、4−ジアミノシンナ
ムアニリドを用いた以外は実施例1と同様にして本発明
のポリアミドイミドを得た。
Example 3 The present invention was carried out in the same manner as in Example 1 except that 4"-methyl-3',4-diaminocinnamanilide was used instead of 3',4-diaminocinnamanilide used in Example 1. of polyamideimide was obtained.

物性試験 一ヒ記実施例1〜3で得たポリアミドイミドについて下
記(1)〜(6)の物性試験を行い下表に示す結果をf
?fた。
Physical property test 1 The following physical property tests (1) to (6) were conducted on the polyamide-imide obtained in Examples 1 to 3, and the results are shown in the table below.
? It was.

(1)ポリアミドイミドの粘度 ポリアミドイミド0.5g/NMP 100mlの濃度
のポリアミドイミド溶液を30°Cで対数粘度を測定し
た。
(1) Viscosity of polyamide-imide The logarithmic viscosity of a polyamide-imide solution having a concentration of 0.5 g of polyamide-imide/100 ml of NMP was measured at 30°C.

(2)ポリアミドイミドの成膜性 厚さ約10μのポリアミドイミドフィルムをガラス板上
に作成し、これを水に浸して剥離し、180°に折り曲
げ、クランクのない場合をO、クラックありを△、製膜
時にクランクの生じるものを×とした。
(2) Film forming properties of polyamide-imide A polyamide-imide film with a thickness of about 10 μm was created on a glass plate, immersed in water, peeled off, and bent at 180 degrees. , Those in which cranking occurred during film formation were marked as ×.

(3)ポリアミドイミドのNMPに対する熔解性常温に
おいてNMPに対するポリアミドイミドの溶解度(wt
%)を測定した。
(3) Solubility of polyamide-imide in NMP Solubility of polyamide-imide in NMP at room temperature (wt
%) was measured.

(4)ポリアミドイミドフィルムの溶解性ポリアミドイ
ミドのNMP1B%溶液から作成した厚さ約10μのポ
リアミドイミドフィルムを室温でNMP中に浸漬し攪拌
し、該フィルムが熔解するまでの時間で溶解性を測定し
た。
(4) Solubility of polyamide-imide film A polyamide-imide film with a thickness of approximately 10μ prepared from a 1B% solution of polyamide-imide in NMP is immersed in NMP at room temperature and stirred, and the solubility is measured by the time it takes for the film to melt. did.

(5)熱分解開始温度 理学電気@製差動熱天秤TG−DSCにより、重量減の
開始温度を測定した。
(5) Starting temperature of thermal decomposition The starting temperature of weight loss was measured using a differential thermobalance TG-DSC manufactured by Rigaku Denki@.

(6)光硬化特性 ポリアミドイミドのNMP 10%溶液をガラス板上に
回転塗布機(20’00〜5000rpm )を用いて
塗布し、圧力1〜2 mmHHの減圧下、50℃で5時
間乾燥して数μの厚さく下表参照)の薄膜を作成し、こ
の薄膜について下記の光感度及び解像力の試験に供した
(6) Photocuring properties A 10% NMP solution of polyamideimide was applied onto a glass plate using a spin coater (20'00 to 5000 rpm), and dried at 50°C for 5 hours under reduced pressure of 1 to 2 mmHH. A thin film having a thickness of several μm (see the table below) was prepared using the following methods, and this thin film was subjected to the following photosensitivity and resolution tests.

■光感度 上記薄膜を、超高圧水銀灯(ジェットライト2kW)を
用いて、照度7.2mW /cta (350m μ)
で照射して光硬化させ、光硬化する迄の光照射量(、J
/cnl)を測定した。
■Photosensitivity The above thin film was coated with an ultra-high pressure mercury lamp (jet light 2kW) at an illuminance of 7.2mW/cta (350mμ).
The amount of light irradiation until photocuring (, J
/cnl) was measured.

■解像力 −に記薄膜についてテストチャートとして凸版印刷G木
製ネガ型テストチャート(トソパンテストチャートN、
最小線中0.98±0.25μ)を用いてレリーフパタ
ーンを形成し、パターンの良否を判定した。
■Resolution - Thin film test chart Toppan Printing G wooden negative type test chart (Tosopan test chart N,
A relief pattern was formed using a minimum line diameter of 0.98±0.25μ), and the quality of the pattern was determined.

−1(-1(

Claims (3)

【特許請求の範囲】[Claims] (1)芳香族テトラカルボン酸またはその二無水物と、
下記一般式(I)で表される芳香族ジアミン化合物とを
重合・イミド化することによって得られる、有機溶媒可
溶性の感光性ポリアミドイミド。
(1) aromatic tetracarboxylic acid or its dianhydride;
An organic solvent-soluble photosensitive polyamide-imide obtained by polymerizing and imidizing an aromatic diamine compound represented by the following general formula (I).
(2)芳香族テトラカルボン酸またはその二無水物が、
3,3”、4.4’−ビフェニルテトラカルボン酸、ま
たはその二無水物、2.2’ 、3,3°−ビフェニル
テトラカルボン酸、またはその二無水物、2,3,3°
、4゛−ビフェニルテトラカルボン酸、またはその二無
水物、2.3,3”、4゛−ベンゾフェノンテトラカル
ポン酸、またはその二無水物、3.3’ 、4.4”−
ベンゾフェノンテトラカルポン酸、またはその二無水物
、及びピロメリット酸、またはその二無水物である、特
許請求の範囲第(11項記載の有機溶媒可溶性の感光性
ポリアミドイミド。
(2) aromatic tetracarboxylic acid or its dianhydride,
3,3", 4.4'-biphenyltetracarboxylic acid or its dianhydride, 2.2', 3,3°-biphenyltetracarboxylic acid or its dianhydride, 2,3,3°
, 4′-biphenyltetracarboxylic acid, or its dianhydride, 2.3,3”, 4′-benzophenonetetracarboxylic acid, or its dianhydride, 3.3′, 4.4”-
The organic solvent-soluble photosensitive polyamideimide according to claim 11, which is benzophenonetetracarboxylic acid or its dianhydride, and pyromellitic acid or its dianhydride.
(3)芳香族ジアミン化合物が、4.4°−ジアミノシ
ンナムアニリド、3゛、4−ジアミノシンナムアニリド
、3.4’−ジアミノシンナムアニリド、3,3゛−ジ
アミノシンナムアニリド、2゜2°−ジアミノシンナム
アニリド及び4”−メチ゛ルー3゛、4−ジアミノシン
ナムアニリドである、特許請求の範囲第(11項記載の
有機溶媒可溶性の感光性ポリアミドイミド。
(3) The aromatic diamine compound is 4.4°-diaminocinnamanilide, 3′,4-diaminocinnamanilide, 3.4′-diaminocinnamanilide, 3,3′-diaminocinnamanilide, 2 The organic solvent-soluble photosensitive polyamideimide according to claim 11, which is 2°-diaminocinnamanilide and 4''-methyl-3,4-diaminocinnamanilide.
JP1858783A 1983-02-07 1983-02-07 Organic solvent-soluble photosensitive polyamide-imide Pending JPS59145216A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1858783A JPS59145216A (en) 1983-02-07 1983-02-07 Organic solvent-soluble photosensitive polyamide-imide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1858783A JPS59145216A (en) 1983-02-07 1983-02-07 Organic solvent-soluble photosensitive polyamide-imide

Publications (1)

Publication Number Publication Date
JPS59145216A true JPS59145216A (en) 1984-08-20

Family

ID=11975757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1858783A Pending JPS59145216A (en) 1983-02-07 1983-02-07 Organic solvent-soluble photosensitive polyamide-imide

Country Status (1)

Country Link
JP (1) JPS59145216A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025461A (en) * 1997-09-26 2000-02-15 Nippon Mektron, Limited Photosensitive polyimide
US6077924A (en) * 1998-05-01 2000-06-20 Nipopon Mektron Limited Polyimides, process for producing the same and photosensitive composition containing the same
US6096850A (en) * 1998-05-14 2000-08-01 Nippon Mektron Limited Polyimides, process for producing the same and photosensitive composition containing the same
US6232039B1 (en) 1998-05-14 2001-05-15 Nippon Mektron Limited Photosensitive composition
US6245484B1 (en) 1998-05-14 2001-06-12 Nippon Mektron Limited Polymides, process for producing the same and photosensitive composition the same
JP2008531782A (en) * 2005-12-01 2008-08-14 エルジー・ケム・リミテッド Novel polyimide and method for producing the same
US8057700B2 (en) 2007-12-07 2011-11-15 Cheil Industries, Inc. Liquid crystal photo-alignment agent and liquid crystal photo-alignment film and liquid crystal display including the same
US8425799B2 (en) 2007-10-10 2013-04-23 Cheil Industries Inc. Photoalignment agent of liquid crystal, photoalignment film of liquid crystal including the same, and liquid crystal display including the same
US8487069B2 (en) 2009-12-16 2013-07-16 Cheil Industries Inc. Liquid crystal photo-alignment agent, liquid crystal photo-alignment layer manufactured using the same, and liquid crystal display device including the liquid crystal photo-alignment layer
US8623515B2 (en) 2010-12-29 2014-01-07 Cheil Industries Inc. Liquid crystal alignment agent, liquid crystal alignment film manufactured using the same, and liquid crystal display device including the liquid crystal alignment film
US8722158B2 (en) 2008-12-12 2014-05-13 Cheil Industries Inc. Liquid crystal photo-alignment agent and liquid crystal photo-alignment film manufactured using the same
US8969486B2 (en) 2011-12-19 2015-03-03 Cheil Industries Inc. Liquid crystal alignment agent, liquid crystal alignment film using the same, and liquid crystal display device including the liquid crystal alignment film
CN107438654A (en) * 2016-03-28 2017-12-05 株式会社Lg化学 Aligning agent for liquid crystal, the liquid crystal aligning layer comprising it and the method for preparing liquid crystal aligning layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57131227A (en) * 1981-02-09 1982-08-14 Nippon Telegr & Teleph Corp <Ntt> Photopolymer and its production

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57131227A (en) * 1981-02-09 1982-08-14 Nippon Telegr & Teleph Corp <Ntt> Photopolymer and its production

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025461A (en) * 1997-09-26 2000-02-15 Nippon Mektron, Limited Photosensitive polyimide
US6077924A (en) * 1998-05-01 2000-06-20 Nipopon Mektron Limited Polyimides, process for producing the same and photosensitive composition containing the same
US6096850A (en) * 1998-05-14 2000-08-01 Nippon Mektron Limited Polyimides, process for producing the same and photosensitive composition containing the same
US6232039B1 (en) 1998-05-14 2001-05-15 Nippon Mektron Limited Photosensitive composition
US6245484B1 (en) 1998-05-14 2001-06-12 Nippon Mektron Limited Polymides, process for producing the same and photosensitive composition the same
US6365324B1 (en) 1998-05-14 2002-04-02 Nippon Mektron, Limited Photosensitive composition
US6486290B1 (en) 1998-05-14 2002-11-26 Nippon Mektron, Limited Polyimides, process for producing the same and photosensitive composition containing the same
US6582885B2 (en) 1998-05-14 2003-06-24 Nippon Mektron, Ltd. Polyimides, process for producing the same and photosensitive composition containing the same
JP2008531782A (en) * 2005-12-01 2008-08-14 エルジー・ケム・リミテッド Novel polyimide and method for producing the same
US8425799B2 (en) 2007-10-10 2013-04-23 Cheil Industries Inc. Photoalignment agent of liquid crystal, photoalignment film of liquid crystal including the same, and liquid crystal display including the same
US8057700B2 (en) 2007-12-07 2011-11-15 Cheil Industries, Inc. Liquid crystal photo-alignment agent and liquid crystal photo-alignment film and liquid crystal display including the same
US8722158B2 (en) 2008-12-12 2014-05-13 Cheil Industries Inc. Liquid crystal photo-alignment agent and liquid crystal photo-alignment film manufactured using the same
US8487069B2 (en) 2009-12-16 2013-07-16 Cheil Industries Inc. Liquid crystal photo-alignment agent, liquid crystal photo-alignment layer manufactured using the same, and liquid crystal display device including the liquid crystal photo-alignment layer
US8623515B2 (en) 2010-12-29 2014-01-07 Cheil Industries Inc. Liquid crystal alignment agent, liquid crystal alignment film manufactured using the same, and liquid crystal display device including the liquid crystal alignment film
US8969486B2 (en) 2011-12-19 2015-03-03 Cheil Industries Inc. Liquid crystal alignment agent, liquid crystal alignment film using the same, and liquid crystal display device including the liquid crystal alignment film
CN107438654A (en) * 2016-03-28 2017-12-05 株式会社Lg化学 Aligning agent for liquid crystal, the liquid crystal aligning layer comprising it and the method for preparing liquid crystal aligning layer
US10526540B2 (en) 2016-03-28 2020-01-07 Lg Chem, Ltd. Liquid crystal aligning agent, liquid crystal alignment layer comprising the same and method for preparing liquid crystal alignment layer
CN107438654B (en) * 2016-03-28 2020-08-14 株式会社Lg化学 Liquid crystal aligning agent, liquid crystal alignment layer comprising same and method for preparing liquid crystal alignment layer

Similar Documents

Publication Publication Date Title
WO2002023276A1 (en) Negative photosensitive polyimide composition and method of forming image from the same
TW201120570A (en) Photosensitive resin composition and dry film comprising the same
JPS59145216A (en) Organic solvent-soluble photosensitive polyamide-imide
JPS59108031A (en) Photosensitive polyimide
JPH0225378B2 (en)
JPS59232122A (en) Organic solvent-soluble photosensitive polyimide
JP2640470B2 (en) New photosensitive composition
JPS606729A (en) Photosensitive polyimide soluble in organic solvent
TW201106105A (en) Photosensitive resin composition and cured film
JP2000147768A (en) Negative photosensitive polyimide composition and insulating film
JPH0850354A (en) Photosensitive composition for i-line
JPH03186847A (en) Photosensitive resin composition
JP3378379B2 (en) Photosensitive polyimide resin composition
TW201510083A (en) Photosensitive resin composition, relief pattern film thereof, method for producing relief pattern film, electronic component or optical product including relief pattern film, and adhesive including photosensitive resin composition
JPH0368065B2 (en)
JPH0344107B2 (en)
JP2001064416A (en) Polyimide film and its production
JPS617328A (en) Photo-sensitive polyamide
JP2024507156A (en) Polyimide with low dielectric loss
JP2003295431A (en) Photosensitive resin composition and method for producing the same
JPH05224419A (en) Forming method for polyimide fine pattern
JPS59131927A (en) Photosensitive resin composition
JPH0153770B2 (en)
JP2627632B2 (en) Coating composition
JPS59219255A (en) Novel aromatic diamine compound