JPS5914469A - Polishing apparatus - Google Patents
Polishing apparatusInfo
- Publication number
- JPS5914469A JPS5914469A JP57119486A JP11948682A JPS5914469A JP S5914469 A JPS5914469 A JP S5914469A JP 57119486 A JP57119486 A JP 57119486A JP 11948682 A JP11948682 A JP 11948682A JP S5914469 A JPS5914469 A JP S5914469A
- Authority
- JP
- Japan
- Prior art keywords
- work
- polishing
- pad
- workpiece
- surface plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 24
- 230000003746 surface roughness Effects 0.000 abstract description 5
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000001179 sorption measurement Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 19
- 238000007517 polishing process Methods 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 238000007730 finishing process Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/14—Zonally-graded wheels; Composite wheels comprising different abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、ポリッシング装置に関し、特に一工程で、
l−’ +7ツシング作業を完遂する高性能ポリッシン
グ装置に係る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a polishing device, particularly in one step.
The present invention relates to a high-performance polishing device that completes l-'+7 tweezing work.
ポリッシング装置は、ロータリーテーブル上の定盤に研
磨粒又はポリッシングパッドを敷き、回転自在に支承さ
れたワークホルダーにワークを装着し、ロータリーテー
ブル上に載蓋してワークを研磨し、鏡面に仕上げる装置
である。A polishing device is a device that places abrasive grains or polishing pads on a surface plate on a rotary table, attaches a workpiece to a rotatably supported workpiece holder, places the lid on the rotary table, and polishes the workpiece to give it a mirror finish. It is.
通常ラップされエツチングされたワークを鏡面に仕上げ
る工程は、第1にワーク素材表面を平面化するためのポ
リッシュ量を多くする工程と、第2にワーク表面の粗さ
く微少なスクラッチ)を減らす面仕上工程とに分離して
考えた方が理解しやすい。第1の平面化工程は、切断さ
れたワーク表面の深い傷を取ることが主目的であるから
、鞭くi租曳を瓦いパ・/l”を逼ひワー2し連像を相
打’?Jahl]圧ノアも大としてポリッシング量を早
く大きくすることが肝要である。第20面仕上工程は全
体としては平面であるが面粗さが大きいワーク表面を微
細な面粗さにまで平滑化する工程で、きくけ必要としな
い。The process of finishing lapped and etched workpieces to a mirror finish involves firstly increasing the polishing amount to flatten the surface of the workpiece, and secondly improving the surface finish to reduce roughness and minute scratches on the workpiece surface. It is easier to understand if you consider it separately from the process. The main purpose of the first flattening process is to remove deep scratches on the surface of the cut workpiece, so the first planarization step is to remove deep scratches from the surface of the cut workpiece. '? Jahl] It is important to increase the pressure and polishing amount quickly.The 20th surface finishing process smoothes the surface of the workpiece, which is flat as a whole but has a large surface roughness, to a fine surface roughness. In the process of converting, listening is not required.
従来は、ロータリーテーブル上全面一様なパッドを敷い
た定盤で平面化の工程を先ず行い、次により微細なI\
°リドを敷いた別のポリッシング装置又は定盤と付は変
え面粗度の微細化工程を行っていた。ところで定盤面は
外周は周速が大きく内周に近付くに従って周速は小さく
なる。Conventionally, the flattening process was first performed on a rotary table with a uniform pad spread over the entire surface, and then the finer I\
°A separate polishing device or surface plate with a lid was used to perform the process of refining the surface roughness. By the way, the peripheral speed of the surface plate surface is high at the outer periphery and decreases as it approaches the inner periphery.
従って外周は平面化工程に好適であるが面仕上工程には
適当でなく、反対に内周は平面化工程には能率的でない
ものである。しかし全面一様な粒度をもつ従来のポリッ
シング装置ではこの点を利用することは不可能であった
。Therefore, the outer periphery is suitable for the planarizing process, but not for the surface finishing process, and on the contrary, the inner periphery is not efficient for the planarizing process. However, it has been impossible to utilize this point with conventional polishing equipment that has uniform particle size over the entire surface.
この発明は以上の点に鑑み、工程の能率化と仕上り面の
質の向上と操作手数の省略との三者を共に向上させるこ
とを目的とする。In view of the above points, the present invention aims to improve the efficiency of the process, improve the quality of the finished surface, and reduce the number of operations.
以下、この発明の実施例を示す図面と共に詳細に説明す
る。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第1図はこの発明の実施例の要部平面図、第2図は同側
面図である。両図を参照して、定盤(1)はロータリー
テーブル(10)の上面に同芯円ツシングパッド(13
)を敷き詰めて成るものである。ワークホルダー(2)
はポールジヨイント(3)等によって回転揺動弁自在に
支承され、支柱(4)を回動するアーム(5)によって
移行せしめられる。FIG. 1 is a plan view of a main part of an embodiment of the invention, and FIG. 2 is a side view of the same. Referring to both figures, the surface plate (1) has a concentric circular threading pad (13) on the top surface of the rotary table (10).
). Work holder (2)
The rotatable swing valve is freely supported by a pole joint (3) or the like, and is moved by an arm (5) that rotates a column (4).
7−り(01は例えば半導体チップ素材のシリコンウェ
ハーなどであり、ワークホルダー(2)に吸着・接着な
どで取付され、ワークホルダー(21ト共に定盤上に降
ろされポリッシング工程に入る。7-ri (01 is, for example, a silicon wafer made of a semiconductor chip material, etc.) is attached to a work holder (2) by adsorption or adhesion, and both work holders (21) are lowered onto a surface plate to begin the polishing process.
ポリ1.7シングエ程は、平面化の荒仕上する1次工程
は、ワーク(21)が荒いポリッシングパッド(11)
の範囲に納る位置に降ろされ、定盤の周速によってワー
クも自転しながら行われる。In the poly 1.7 polishing process, the first process of rough finishing of planarization is to polish the workpiece (21) with a rough polishing pad (11).
The workpiece is lowered to a position within the range of , and the workpiece rotates on its own axis depending on the circumferential speed of the surface plate.
このときポリッシングパッド(11)は荒い面粗度であ
り、面積も大きいので研磨粒の“切れ味“も長く保たれ
、且つ周速も大きV・ので能率よく平面化工程が進行す
る。平面化行程が終ると、続いて、或いは研磨粒の洗浄
を行って、中粒のポリッシングパッド(12)の範囲(
22)にワークが降ろされ、1次の平面化工程で生じた
荒い仕上面を細くする2次工程に入る。同様にして3次
の鏡面化仕上工程に入り、ワークが仕上げられるもので
ある。内周のポリッシングパッド(13)の範囲(Z3
)Kワークが至ったとぎは微細む沖
な菌雑斥と小さな周速で行われるので、ポリッシング量
はわずかでよく、仕上面の粗度か細く仕−ヒげられる必
要のある3次工程には好適なものである。2次工程は1
次工程と3次工程の中間的性格をもつので、中間の範囲
(22)にあるのも又好適である。At this time, the polishing pad (11) has a rough surface and a large area, so the "sharpness" of the abrasive grains is maintained for a long time, and the circumferential speed is also high, so that the planarization process proceeds efficiently. After the planarization process is completed, or by cleaning the polishing particles, the area of the medium-grained polishing pad (12) (
At step 22), the workpiece is unloaded and enters a secondary process in which the rough finished surface produced in the primary flattening process is made thin. In the same way, the workpiece is finished by entering the tertiary mirror finishing process. The area of the polishing pad (13) on the inner circumference (Z3
) Since the polishing of the K workpiece is carried out at a small circumferential speed and with a large amount of microorganisms, only a small amount of polishing is required, and it is suitable for the tertiary process where the finished surface needs to be roughened or finely polished. It is suitable. The secondary process is 1
Since it has an intermediate character between the next step and the tertiary step, it is also suitable that it is in the middle range (22).
以上の結果、ポリッシング能率と仕上面の質と共に満足
されるものであり、しかもワークはワークホルダーに付
けたままにして全工程を終ることができ、操作手数も省
力化できるものでもある。As a result of the above, the polishing efficiency and the quality of the finished surface are satisfactory, and the entire process can be completed while the workpiece remains attached to the workpiece holder, which also saves operating time.
なお、ワークの付外しは、ワークの欠けや曲り、及びワ
ークホルダーの正規位置へ取付得たか否かなど自動化し
た場合に兎角問題が生じやすいが、この発明によりはワ
ークは取付したままで全工程を終るので、自動化する場
合にも好適であり、より省力化に貢献する所が大きい。Note that when attaching and removing a workpiece, problems such as chipping or bending of the workpiece, and whether or not the workpiece is installed in the correct position on the workpiece holder are likely to occur when automated, but with this invention, the entire process can be done without leaving the workpiece attached. , it is suitable for automation, and greatly contributes to labor saving.
以上実施例では、ポリッシングパッド(11)(12,
)(13)を用いる例を示したが、(11) (12)
(13)の間に間仕切を設け、間仕切の中に研磨粒を
流して行う手段も同様の効果を有する。In the above embodiments, polishing pads (11) (12,
) (13), but (11) (12)
Similar effects can also be achieved by providing a partition between (13) and flowing abrasive grains into the partition.
この場合は、1次、2次、3次の工程の間に研磨粒の洗
浄が不可欠となるが、ワークを取付したままのワークホ
ルダーを洗浄液に浸ける手段が可能なので省力化への影
響は少い。In this case, it is essential to wash the abrasive grains between the primary, secondary, and tertiary processes, but it is possible to immerse the workpiece holder with the workpiece attached in the cleaning solution, so the impact on labor saving is small. stomach.
又、実施例は荒・中・仕上の3回工程を例としたが2回
又は4回以上の工程も可能であることは言うまでもない
。Furthermore, although the embodiments have been exemplified by three steps of roughing, medium and finishing, it goes without saying that two or four or more steps are also possible.
この発明は一枚の定盤に1瞳の異る複数のボ ゛リツシ
ングパッドを装着して成ることを%徴とするポリッシン
グ装置であるから、ポリッシング工程に最適の面机償と
速度を選択的に且つワークを取付したまま得られるので
、ポリッシング工程の仕上り速度は向上し、仕上り精度
も良好で且つ操作手数も省ける、好妙な装置を得られる
ものである。Since this invention is a polishing device in which a plurality of boring pads with different pupils are attached to a single surface plate, the optimum surface compensation and speed can be selected for the polishing process. Since the polishing process can be performed with the workpiece still attached, the finishing speed of the polishing process is improved, the finishing accuracy is good, and the number of operations can be reduced, making it possible to obtain an elegant device.
第1図は本発明一実施例の平面図、第2図は同じく側面
図である。
1・・・定盤 2・・・ワークホルダー3・・・ボール
ジヨイント 4・・・支柱 5・・・アーム10・・・
ロータリーテーブルFIG. 1 is a plan view of one embodiment of the present invention, and FIG. 2 is a side view of the same. 1... Surface plate 2... Work holder 3... Ball joint 4... Support column 5... Arm 10...
rotary table
Claims (1)
装着して成ることを特徴とするポリッシング装置。[Claims] and υ゛Miscellaneous ■ A polishing device characterized in that a plurality of polishing pads of different hardness are attached to a single surface plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57119486A JPS5914469A (en) | 1982-07-08 | 1982-07-08 | Polishing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57119486A JPS5914469A (en) | 1982-07-08 | 1982-07-08 | Polishing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5914469A true JPS5914469A (en) | 1984-01-25 |
Family
ID=14762462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57119486A Pending JPS5914469A (en) | 1982-07-08 | 1982-07-08 | Polishing apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5914469A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0622155A1 (en) * | 1993-04-30 | 1994-11-02 | Motorola, Inc. | Polishing pad and a method of polishing a semiconductor substrate |
US5575707A (en) * | 1994-10-11 | 1996-11-19 | Ontrak Systems, Inc. | Polishing pad cluster for polishing a semiconductor wafer |
JPH1083977A (en) * | 1996-08-16 | 1998-03-31 | Applied Materials Inc | Formation of transparent window on polishing pad for mechanical chemical polishing device |
KR19990006073A (en) * | 1997-06-30 | 1999-01-25 | 김영환 | Planarization method of semiconductor device |
US5968843A (en) * | 1996-12-18 | 1999-10-19 | Advanced Micro Devices, Inc. | Method of planarizing a semiconductor topography using multiple polish pads |
WO2001098027A1 (en) * | 2000-06-19 | 2001-12-27 | Struers A/S | A multi-zone grinding and/or polishing sheet |
US6336845B1 (en) | 1997-11-12 | 2002-01-08 | Lam Research Corporation | Method and apparatus for polishing semiconductor wafers |
-
1982
- 1982-07-08 JP JP57119486A patent/JPS5914469A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0622155A1 (en) * | 1993-04-30 | 1994-11-02 | Motorola, Inc. | Polishing pad and a method of polishing a semiconductor substrate |
US5575707A (en) * | 1994-10-11 | 1996-11-19 | Ontrak Systems, Inc. | Polishing pad cluster for polishing a semiconductor wafer |
EP0919330A1 (en) * | 1994-10-11 | 1999-06-02 | Ontrak Systems, Inc. | Polishing pad cluster for polishing a semiconductor wafer |
JPH1083977A (en) * | 1996-08-16 | 1998-03-31 | Applied Materials Inc | Formation of transparent window on polishing pad for mechanical chemical polishing device |
US5968843A (en) * | 1996-12-18 | 1999-10-19 | Advanced Micro Devices, Inc. | Method of planarizing a semiconductor topography using multiple polish pads |
KR19990006073A (en) * | 1997-06-30 | 1999-01-25 | 김영환 | Planarization method of semiconductor device |
US6336845B1 (en) | 1997-11-12 | 2002-01-08 | Lam Research Corporation | Method and apparatus for polishing semiconductor wafers |
US6416385B2 (en) | 1997-11-12 | 2002-07-09 | Lam Research Corporation | Method and apparatus for polishing semiconductor wafers |
US6517418B2 (en) | 1997-11-12 | 2003-02-11 | Lam Research Corporation | Method of transporting a semiconductor wafer in a wafer polishing system |
WO2001098027A1 (en) * | 2000-06-19 | 2001-12-27 | Struers A/S | A multi-zone grinding and/or polishing sheet |
US7004823B2 (en) | 2000-06-19 | 2006-02-28 | Struers A/S | Multi-zone grinding and/or polishing sheet |
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