JPS59100524A - Application of resist - Google Patents

Application of resist

Info

Publication number
JPS59100524A
JPS59100524A JP21012282A JP21012282A JPS59100524A JP S59100524 A JPS59100524 A JP S59100524A JP 21012282 A JP21012282 A JP 21012282A JP 21012282 A JP21012282 A JP 21012282A JP S59100524 A JPS59100524 A JP S59100524A
Authority
JP
Japan
Prior art keywords
resist
wafer
resist liquid
sample
jig
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21012282A
Other languages
Japanese (ja)
Inventor
Shuzo Oshio
大塩 修三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP21012282A priority Critical patent/JPS59100524A/en
Publication of JPS59100524A publication Critical patent/JPS59100524A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To reduce sharply an applying resist liquid by a method wherein a flat board is pressed against the resist liquid dropped on a sample to diffuse the resist liquid to the circumferential part on the sample, and then the sample is rotated. CONSTITUTION:A jig 11 constructed by equipping an arm 13 to a flat board 12 is prepared, and the jig 11 is pressed against the face of a resist liquid dropped on a wafer 14 to diffuse the resist liquid. Then the wafer 14 is rotated. Then, by removing the flat board 12, and performing the final application process according to spin coating, a resist film is adhered on the wafer 14 at the desired film thickness. Accordingly, the resist liquid can be reduced sharply.

Description

【発明の詳細な説明】 (a)  発明の技術分野 本発明はホトリソグラフィ等において、レジスト液をス
ピンコード方式で塗布するレジスト塗布方法に関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a resist coating method for coating a resist solution using a spin code method in photolithography and the like.

(b)  技術の背景 半導体ウニ八等の試料上に所望の集積回路パター/ヲ得
るため不必要部分を光学的及び化学的に取除くホトエッ
チフグ技術であって、不必要部分を一般には化学薬品に
より、エツチングを行うがこのエツチングに対する保護
膜が必要で、この保護膜としてレジスト塗布を行なう。
(b) Background of the technology This is a photo-etching technique in which unnecessary parts are optically and chemically removed in order to obtain a desired integrated circuit pattern on a sample such as a semiconductor. , etching is performed, but a protective film against this etching is required, and a resist coating is used as this protective film.

特に大聖化されつつあるウェハ上に均一な膜厚のレジス
ト膜を形成する必要があシ、膜厚にばらつきを生ずると
一ノ性能を劣化させる。
In particular, it is necessary to form a resist film of uniform thickness on a wafer, which is becoming increasingly popular, and any variation in film thickness will degrade performance.

(c)従来技術と問題点 スピンコード方式で得られる膜厚はレジスト液の粘度、
スピンナの回転速度、レジスト液の溶剤、更にスピンナ
の初期回転加4の関数によって決まる。一方つエバは微
細加工技術の発展に伴い高密度高集積化の傾向により大
口径され均一な膜厚となるよう塗布することが困難とな
っている。
(c) Conventional technology and problems The film thickness obtained with the spin code method depends on the viscosity of the resist solution.
It is determined by a function of the rotational speed of the spinner, the solvent of the resist solution, and the initial rotational force 4 of the spinner. On the other hand, with the development of microfabrication technology, the diameter of the evaporator has become large due to the trend towards higher density and higher integration, making it difficult to coat the film to a uniform thickness.

第1図は従来のレジスト塗布装置を示す構成図である。FIG. 1 is a block diagram showing a conventional resist coating apparatus.

図中1はフリー/ブース2内でスピンコード方式により
レジスト液をウェハ3上に塗布するレジスト塗布装置で
あって、レジスト槽6からシリンダー4を介して一定量
のレジスト液をベローポンプ5に送シ込み、ベローポン
プ5を圧してウェハ3上に一定量のレジスト液を滴下す
る。ウエハ3を支持するウェハホルダー〃の回転により
ウェハ3上に滴下されたレジスト液は中央から周辺部に
拡散される。配管系にはシリンダー4と連動するチック
パルプVl、V2’fflし、レジスト液は矢印方向に
流動する。
In the figure, 1 is a resist coating device that coats a resist solution onto a wafer 3 using a spin code method in a free/booth 2, and sends a certain amount of resist solution from a resist tank 6 to a bellows pump 5 via a cylinder 4. Then, the bellows pump 5 is pressed to drop a certain amount of resist liquid onto the wafer 3. As the wafer holder supporting the wafer 3 rotates, the resist liquid dropped onto the wafer 3 is spread from the center to the periphery. In the piping system, tick pulps Vl and V2'ffl are connected to the cylinder 4, and the resist liquid flows in the direction of the arrow.

ベローポンプ5へのレジスト液充填にはv1ヲ開とし、
Vzt閉じる。レジスト液の滴下にはVlに閉v2は開
とし、レジスト液の拡散時余剰レジスト液が回転するウ
ェハ3上にもれないよう液の流量を調節する二゛−ドル
弁8を設ける。またレジスト液内に介在する塵埃を除去
するための漏過機9を備えて構成される。所望の膜厚が
得られるようベローポンプ5に充填するレジスト液は規
定されるが大口径のウェハでは均一な膜厚を得ることは
容易でなく中心が厚く周辺部で薄くなる傾向がある。
To fill the bellows pump 5 with resist liquid, open v1.
Vzt close. When dropping the resist solution, V1 is closed and V2 is open, and a two-dollar valve 8 is provided to adjust the flow rate of the solution so that excess resist solution does not leak onto the rotating wafer 3 when the resist solution is diffused. It is also configured to include a leaker 9 for removing dust present in the resist solution. The resist liquid to be filled into the bellows pump 5 is specified so as to obtain a desired film thickness, but it is not easy to obtain a uniform film thickness with large diameter wafers, and the film tends to be thick at the center and thin at the periphery.

更に高速回転するウェハ上に生ずる気流によって放射状
の膜厚むらいわゆる脈離を起こすことがある。しかも滴
下するレジスト液に対して形成されるウェハ上の膜厚は
数ミクロンで被着量はレジスト液全体の数パーセントに
すぎずロス分が多く(d)  発明の目的 本発明は上記の欠点に鑑み、ウェハ上に滴下したレジス
ト液面に平板を押しつけレジスト液を拡散させ更にスピ
ンコードするレジスト液節減に有効な塗布方法の提供を
目的とする。
Furthermore, air currents generated on the wafer rotating at high speed may cause radial film thickness unevenness, so-called venation. Moreover, the thickness of the film formed on the wafer by the dripping resist solution is several microns, and the amount deposited is only a few percent of the entire resist solution, resulting in a large amount of loss (d) Purpose of the Invention The present invention solves the above drawbacks. In view of this, it is an object of the present invention to provide a coating method that is effective in saving the resist liquid by pressing a flat plate against the surface of the resist liquid dropped on a wafer, diffusing the resist liquid, and further spin-coding the resist liquid.

(e)  発明の構成 上記目的は本発明によれば試料上に滴下したレジスト液
に平板を押圧して該レジスト液を該試料上の周辺部に拡
散させ、次いで該試料を回転させることによって達せら
れる。
(e) Structure of the Invention According to the present invention, the above object can be achieved by pressing a flat plate against a resist solution dropped onto a sample to diffuse the resist solution to the periphery of the sample, and then rotating the sample. It will be done.

(f)  発明の実施例 以下本発明の実施例を図面により詳述する。(f) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.

第2図は本発明の一実施例である塗布方法を示す側面図
である。
FIG. 2 is a side view showing a coating method according to an embodiment of the present invention.

図中平板12にアーム13を取付けて構成される治具1
1t−設はウェハ14上に滴下したレジスト液面に治具
11を押圧してレジスト液を拡散させる。ウェハ14の
レジスト塗布面と平板12との間隙は約0.1〜0,2
簡に保たれる。平板12のレジスト液に接する面12a
は液に対して付着性、腐食性のない樹脂例えばテフロン
系樹脂、等でコーテン ングするかまたは平板12はテア0〃材で構成する。何
れも平担で歪、曲り等がないことが望ましくまた治具1
1はウェハ14上に移動及び押圧す手順は治具11をク
リーンブース内の所定位置に戻し1、ウェハ14上にレ
ジスト液を滴下する。次に治具11をウェハ14上に移
動し、下降させレジスト液面を押圧しレジスト液をウェ
ハ中心から間辺部に拡散させる。
In the figure, a jig 1 consisting of an arm 13 attached to a flat plate 12
In the 1t-setting, the jig 11 is pressed against the surface of the resist liquid dropped onto the wafer 14 to spread the resist liquid. The gap between the resist coated surface of the wafer 14 and the flat plate 12 is approximately 0.1 to 0.2
easily kept. Surface 12a of flat plate 12 in contact with resist liquid
The flat plate 12 is coated with a resin that is not adhesive or corrosive to liquids, such as Teflon resin, or the flat plate 12 is made of a tear 0 material. It is desirable that both be flat with no distortion or bending, and the jig 1
Step 1 is to move and press the jig 11 onto the wafer 14. Return the jig 11 to a predetermined position in the clean booth, step 1, and drop the resist solution onto the wafer 14. Next, the jig 11 is moved onto the wafer 14 and lowered to press the resist liquid level and spread the resist liquid from the center of the wafer to the peripheral portion.

平板12とウェハ14との間隙は前述したように一定間
隙をなすよう調整されているから、拡散叶 されるレジスト膜の膜厚はylO,1〜0,2龍の膜厚
をなして拡散されることになる。しかる後に平板12を
復帰させスピンコードによシ最終的な塗布処理を行なう
ことによりウェハ14上に所望の膜厚でレジスト膜を被
着させることができる。このような構成とすることによ
りレジスト液は従来に比して大幅に節減可能となる。本
実施例では従来4インチ径のウェハに5ccのレジスト
液を滴下するのに対して、1ccのレジスト液で所望の
膜厚が得ら賀 れ形成される膜菓も膜厚むらの少ない均一性が得られ特
にレジスト液節減効果は大きい。
Since the gap between the flat plate 12 and the wafer 14 is adjusted to form a constant gap as described above, the thickness of the resist film to be diffused is ylO,1 to 0,2. That will happen. Thereafter, the flat plate 12 is returned to its original position and a final coating process is performed using a spin cord, thereby making it possible to deposit a resist film with a desired thickness on the wafer 14. With this configuration, the amount of resist liquid can be significantly reduced compared to the conventional method. In this example, whereas conventionally 5 cc of resist solution is dropped onto a wafer with a diameter of 4 inches, the desired film thickness can be obtained with 1 cc of resist solution. is obtained, and the effect of saving resist liquid is particularly large.

億)発明の効果 以上詳細に説明したように本発明の平板治具を用いた塗
布手段と、スピンコード手段とを併用することによりレ
ジスト液は大幅に節減されその経済的効果は著しい。
(B) Effects of the Invention As explained in detail above, by using the coating means using the flat plate jig of the present invention in combination with the spin cord means, the amount of resist liquid can be greatly reduced, and the economical effect thereof is remarkable.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のレジスト塗布装置を示す構成図、第2図
は本発明の一実施例である塗布方法を示す側面図である
。 図中11・・・治具、12・・・平板、13・・・アー
ム、14・・・ ウェハ。
FIG. 1 is a block diagram showing a conventional resist coating apparatus, and FIG. 2 is a side view showing a coating method according to an embodiment of the present invention. In the figure, 11... jig, 12... flat plate, 13... arm, 14... wafer.

Claims (1)

【特許請求の範囲】[Claims] 試料上に滴下したレジスト液に平板を押圧して該レジス
ト液を該試料上の周辺部に拡散させ、次いで該試料を回
転させる′ことを特徴とするレジスト塗布方法。
1. A resist coating method comprising: pressing a flat plate against a resist solution dropped onto a sample to diffuse the resist solution around the sample; and then rotating the sample.
JP21012282A 1982-11-30 1982-11-30 Application of resist Pending JPS59100524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21012282A JPS59100524A (en) 1982-11-30 1982-11-30 Application of resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21012282A JPS59100524A (en) 1982-11-30 1982-11-30 Application of resist

Publications (1)

Publication Number Publication Date
JPS59100524A true JPS59100524A (en) 1984-06-09

Family

ID=16584156

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21012282A Pending JPS59100524A (en) 1982-11-30 1982-11-30 Application of resist

Country Status (1)

Country Link
JP (1) JPS59100524A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242766A (en) * 1985-08-14 1987-02-24 Kyodo Printing Co Ltd Formation of coated film
JP2010207723A (en) * 2009-03-10 2010-09-24 Disco Abrasive Syst Ltd Resin film forming apparatus
JP2015176897A (en) * 2014-03-13 2015-10-05 東京エレクトロン株式会社 Film forming device, film forming method and recording medium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242766A (en) * 1985-08-14 1987-02-24 Kyodo Printing Co Ltd Formation of coated film
JP2010207723A (en) * 2009-03-10 2010-09-24 Disco Abrasive Syst Ltd Resin film forming apparatus
JP2015176897A (en) * 2014-03-13 2015-10-05 東京エレクトロン株式会社 Film forming device, film forming method and recording medium

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