JPS5887818A - Thin film forming method - Google Patents
Thin film forming methodInfo
- Publication number
- JPS5887818A JPS5887818A JP18728881A JP18728881A JPS5887818A JP S5887818 A JPS5887818 A JP S5887818A JP 18728881 A JP18728881 A JP 18728881A JP 18728881 A JP18728881 A JP 18728881A JP S5887818 A JPS5887818 A JP S5887818A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- ions
- film
- metal
- metal thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 150000002500 ions Chemical class 0.000 claims abstract description 20
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 229910052786 argon Inorganic materials 0.000 claims abstract description 3
- 238000005468 ion implantation Methods 0.000 claims abstract description 3
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 14
- -1 aluminum ions Chemical class 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 229910052724 xenon Inorganic materials 0.000 abstract 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 abstract 1
- 229920006254 polymer film Polymers 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000002120 nanofilm Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、半導体、絶縁物あるいは金属カーらなる基
体又は薄膜上に、所望の薄＠を形成する技術に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a technique for forming a desired thin film on a substrate or thin film made of a semiconductor, an insulator, or a metal film.
従来、高分子フィルム等の絶縁物の上に、金属配線をほ
どこす場合、第１図（Ａ） （Ｂ） （Ｃ）に示すよう
な工程で形成さｆしていた。（１）は高分子フィルムで
あシ、その上に蒸着法で金属膜（２）をデポジットし、
写真製版技術を用いて、金属膜の所望の配線パターンを
形成する。しかし、高分子フィルム等の上に蒸着法で形
成した金属膜は、密着性が悪く、形成された配線パター
ンが容易にはく離するという現象が生じていた１、密着
性を改善する方法として、蒸着法の代わシにスパッタリ
ンクでデポジットする方法が提案されている。スパッタ
リングでは、デポジットさ口る金）４分子か連動工事ル
キーを持っているため、高分子フィルムの内部へある程
度進入し、密着性を向−１−させる役割を果す。しかし
ながら、金属分子の連動工事ルキーが、十分に大きくな
いため、密着性の同上には限界があった。Conventionally, when metal wiring was formed on an insulating material such as a polymer film, it was formed using steps as shown in FIGS. (1) is made of a polymer film, on which a metal film (2) is deposited by vapor deposition,
A desired wiring pattern of the metal film is formed using photolithography. However, metal films formed by vapor deposition on polymer films, etc., have poor adhesion and the formed wiring pattern easily peels off1.As a method to improve adhesion, vapor deposition A method of depositing by sputter link has been proposed in place of the law. In sputtering, since the deposit has four molecules or interlocking molecules, it penetrates into the interior of the polymer film to some extent and plays the role of improving adhesion. However, since the interlocking force of the metal molecules is not large enough, there is a limit to the adhesion.
この発明は、従来の蒸鵬法あるいは、スパッタリング法
では不十分でめったテボジツション膜の晋肴性を同一ヒ
させる薄ハＱ形カ兄法を提供することを目的としている
。The object of the present invention is to provide a method for forming a thin C-type film that can achieve the same quality of texture of a vaporization film as conventional vaporization or sputtering methods are insufficient.
以ト、この発明の一夾加り例を図について説明する。第
２図（Ａ）に示す尚分子フィルム（１）の表面に、同図
（Ｂｌに示すように＋９ｒ！＝７！の金Ｘ Ｎ、＋＋
ＩＩ＋ｘ （２）をＡｓ法又はスパッタリング法でテボ
ジットする。金属薄膜の厚さは、後工程のイ詞ンｌ’−
１−人を尚慮して、１０００〜５０００Ａ捏邸が好丑し
い。しかる後に、１ｒＴＩ図（０）に不すように金属薄
膜と１ｒｉｌ−物質の金屑イオン（例えはアルミニウム
・イ詞ン）ヌ１．［アルコノ、ギセノン等の不活性ガス
イオン（：ｇ ａ−１ｌ （１１５〜１０ ” ／ ｃ
ｑｌ捏度注入する。注入エネル、１−は、・「詞ンか金
屑薄膜と高分子フィルムの界面に徐りるよう選ぶ。この
際、第３図に示すように、人帽イ」ン（８’）と金属薄
膜中の金属原子（４）か尚突し、金１爪原子は反跳作用
を受けて、金ｊＡ Ａｒｔ膜とＩＶｈ分−ｒフ・イルム
の界面から高分子フィルム内へ進入する。、 ？ｌ−人
するイ詞ンの注入増か多くなると、反跳４・愛ける金１
０４原子の数も増太し、高分子フィルム（１）内へ多１
社の金部原子（４）が進入り、、金１萬＃ ＩＩρの篩
分子フィルムに対する搦看力が向上する。Hereinafter, an additional example of the present invention will be explained with reference to the drawings. On the surface of the molecular film (1) shown in FIG. 2 (A), gold X N of +9r!=7!, ++
II+x (2) is deposited using the As method or the sputtering method. The thickness of the metal thin film is determined by the term l'- in the subsequent process.
1- Considering people, 1000 to 5000A fake house is good. After that, as shown in the 1rTI diagram (0), a metal thin film and 1ril-substance gold ions (for example, aluminum) are added.1. [Inert gas ions such as alcono, gisenon, etc.
Inject ql. The implantation energy, 1-, is selected so that the injection energy is at the interface between the thin metal film and the polymer film.At this time, as shown in Figure 3, The metal atoms (4) in the thin film collide, and the gold atoms receive a recoil action and enter the polymer film from the interface between the gold jA Art film and the IVh minute-r film. , ? l - When the injection of Ijiun increases or increases, the rebound is 4 and the love gold is 1.
The number of 04 atoms is also increased, and more than 1 is added to the polymer film (1).
The gold atoms (4) of the steel enter the sieve molecular film of gold 10,000 #IIρ and improve its repellency against the sieve molecular film.
最初に形成した金轄助１１いは、イ：１ン？ｌ−人を考
慮して、ある程度以上にはｊｖ〈でき／Ｃかったが、第
２図（Ｄ）に４＼すようにイ詞ン注入しｔこ後で、もう
−１暴二金属薄膜（２′）をテポジットすれは、痩■望
の厚さにすることが可Ｂヒである。The first one I formed was Kinkeisuke 11, or I:1? Considering the number of people, it was possible to exceed a certain level, but after injecting the metal as shown in Fig. 2 (D), the -1 bimetallic thin film was formed. When depositing (2'), it is possible to make it as thick as desired.
こうして形成さ′１１だ金属薄膜（２Ｊ （２’ ）に
、第２図Ｅに示すように写真製版技術で所望の配線パタ
ーンを形成する。さらに、金属薄膜と高分子フィルムの
密着性を向上させるため熱処理をほどこす。A desired wiring pattern is formed on the metal thin film (2J (2')) thus formed by photolithography as shown in Figure 2E.Furthermore, the adhesion between the metal thin film and the polymer film is improved. Heat treatment is applied.
こうして形成された金属薄膜は、下地基板との界面から
ある深さに渡って金属物質が存在しているため、順著に
密着性が向上するという利点を有する。The metal thin film thus formed has the advantage that its adhesion is significantly improved because the metal substance exists over a certain depth from the interface with the underlying substrate.
なお上記実施例では基体表面の全面に渡ってイオン注入
するとしたか、金属＾７’１線パターンを形成する領域
にのみホト・レジスト等のマスクを用いて遣択的に注入
しても良い。In the above embodiment, the ions are implanted over the entire surface of the substrate, but the ions may be implanted selectively only in the region where the metal ^7' one-line pattern is to be formed using a mask such as a photoresist.
また、上記実施例では、基体として高分子フィルムを、
甘たテホンットする１換として金屑を用いて説明し、た
か、半導体、絶縁物、金属等いずれの物質の組み合せで
も上記実施例と同様の効果を臭することはいう壕でもな
い。In addition, in the above examples, a polymer film was used as the base,
The explanation will be made using gold scraps as a simple example, but it is not to say that the same effect as in the above embodiment can be obtained with any combination of materials such as semiconductors, insulators, metals, etc.
以上のように、本発明によれば、テボジットされた薄膜
と、同一物質のイオン又は不活性ガスイオンを、下地基
板と？ｉ！）膜との界面に注入することにより、密着性
の非常に優れた助１＋；ｔを形成することができる。As described above, according to the present invention, ions of the same substance or inert gas ions are used as the base substrate and the thin film subjected to tebolysis. i! ) By injecting it into the interface with the film, it is possible to form a layer with very good adhesion.
第１図（Ａ） （Ｂ） （Ｃ）は、従来の薄膜７１’≦
成法を示す断面図、第２図（Ａ）〜（Ｅ）は、本発明の
一実施例による薄膜形成法を示す。第８図は、界面伺近
に注入されｔこイオンによって、ＮＩ ｌ１ｌｚｉ中の
１１に−「が基体中へ進入する様子を示す模式図である
。
図中、（１）は筒分子フィルムＪｋ体、（２） （２’
）は金属薄膜、（３） （８”）は不活性ガスイオン
、（４）は金属原子を示す。
なお、図中、同−百ｊｌ−ｉ−は、同−又は相当部分を
示す。
代理人 醜 野 イバ −第１図
第２図
第３図
手 続 補 正 書（自発）
基シ′「庁長信殿
１、事１″ｊの表示 特許１１でイ５６−１８７
２８８号２ 発明の名称
薄膜形成法
３、袖１■をする各
車外との関係 特許出願人
５、 補正の対象
明細書の特ｊ１−請求の範囲の欄
６ 油止の内容
明細書の特許請求の範囲を別紙のとおり訂正する。
以上
特許請求の範囲
（１）半導体絶縁物あるいは金１＋４から成る基体また
は薄膜上に所望の物質の薄膜を、蒸着法、スパッタリン
グ法あるいはＣＶＩ）法により、デポジットし、しかる
必に形成した薄膜と同一物質のイオン又は不活性ガスイ
オンをイオン注入することを特徴とするン（’ｉ Ｉｌ
ｌ＾４ｌｌ法。
（２）基体として高分子材料を用い、金属薄膜を形成し
たのち、アルゴン等の不活性ガスイオンをイオン注入す
ることを特徴とする特許請求の範囲第１項記載の薄膜形
成法。
９８−FIG. 1 (A) (B) (C) shows the conventional thin film 71'≦
2A to 2E, which are cross-sectional views showing a method of forming a thin film, show a method of forming a thin film according to an embodiment of the present invention. FIG. 8 is a schematic diagram showing how 11 in NI l1lzi enters into the substrate by t ions injected near the interface. In the figure, (1) is a cylindrical molecular film Jk body. , (2) (2'
) indicates a metal thin film, (3) (8") indicates an inert gas ion, and (4) indicates a metal atom. In the figure, -10jl-i- indicates the same or a corresponding part. Substitute Ugly People - Figure 1, Figure 2, Figure 3 Proceedings Amendment (Voluntary) Indication of "Chairman's Shinden 1, Matter 1"j Patent 11, I56-187
288 No. 2 Name of the invention Thin film forming method 3, Sleeve 1 ■ Relationship with the outside of each vehicle Patent applicant 5, Feature J1 of the specification subject to amendment - Claims column 6 Patent claim of the description of the contents of the oil stopper The scope of is corrected as shown in the attached sheet. Claims (1) A thin film of a desired substance is deposited on a substrate or thin film made of a semiconductor insulator or gold 1+4 by a vapor deposition method, a sputtering method, or a CVI method, and is necessarily the same as the thin film formed. It is characterized by ion implantation of substance ions or inert gas ions.
l^4ll method. (2) The method for forming a thin film according to claim 1, characterized in that after forming a metal thin film using a polymeric material as a base, ions of an inert gas such as argon are implanted. 98-
Claims (2)
膜上に所望の分質の薄膜を、蒸着法、スパッタリング法
あるいはＣＶＤ法によシ、デポジットし、しかる後に形
成した薄膜と同一物質のイオン又は不活性ガスイオンを
イオン注入することを特徴とする薄膜形成法。(1) A thin film of a desired quality is deposited on a substrate or thin film made of a semiconductor insulated wire or metal by vapor deposition, sputtering, or CVD, and then ions or ions of the same substance as the thin film are formed. A thin film formation method characterized by ion implantation of inert gas ions.
たのち、アルゴン等の不活性ガスイオンをイオン注入す
ることを特徴とする特許請求の範囲第１項記載の薄膜形
成法。(2) The method for forming a thin film according to claim 1, characterized in that after forming a metal thin film using a polymeric material as a base, ions of an inert gas such as argon are implanted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18728881A JPS5887818A (en) | 1981-11-19 | 1981-11-19 | Thin film forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18728881A JPS5887818A (en) | 1981-11-19 | 1981-11-19 | Thin film forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5887818A true JPS5887818A (en) | 1983-05-25 |
Family
ID=16203369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18728881A Pending JPS5887818A (en) | 1981-11-19 | 1981-11-19 | Thin film forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5887818A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60182714A (en) * | 1984-02-29 | 1985-09-18 | 日新電機株式会社 | Condenser |
| JPS6211638A (en) * | 1985-07-10 | 1987-01-20 | 東レ株式会社 | Composite material and manufacture thereof |
| JPS62281338A (en) * | 1986-05-29 | 1987-12-07 | Fujitsu Ltd | Vapor phase epitaxy method |
| JPH0250950A (en) * | 1988-08-12 | 1990-02-20 | Toppan Printing Co Ltd | Manufacture of vapor-deposited film |
| JPH0857560A (en) * | 1991-02-12 | 1996-03-05 | Hughes Aircraft Co | Mold tool improved for metal working |
| KR100477820B1 (en) * | 1997-06-30 | 2005-07-07 | 주식회사 하이닉스반도체 | Method of forming aluminum film in semiconductor device |
| US7671809B2 (en) | 2006-03-14 | 2010-03-02 | Getac Technology Corporation | Antenna device with ion-implanted antenna pattern |
| US7768461B2 (en) | 2006-04-17 | 2010-08-03 | Getac Technology Corporation | Antenna device with insert-molded antenna pattern |
| US7825862B2 (en) | 2007-06-01 | 2010-11-02 | Getac Technology Corporation | Antenna device with surface antenna pattern integrally coated casing of electronic device |
-
1981
- 1981-11-19 JP JP18728881A patent/JPS5887818A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60182714A (en) * | 1984-02-29 | 1985-09-18 | 日新電機株式会社 | Condenser |
| JPS6211638A (en) * | 1985-07-10 | 1987-01-20 | 東レ株式会社 | Composite material and manufacture thereof |
| JPS62281338A (en) * | 1986-05-29 | 1987-12-07 | Fujitsu Ltd | Vapor phase epitaxy method |
| JPH0250950A (en) * | 1988-08-12 | 1990-02-20 | Toppan Printing Co Ltd | Manufacture of vapor-deposited film |
| JPH0857560A (en) * | 1991-02-12 | 1996-03-05 | Hughes Aircraft Co | Mold tool improved for metal working |
| KR100477820B1 (en) * | 1997-06-30 | 2005-07-07 | 주식회사 하이닉스반도체 | Method of forming aluminum film in semiconductor device |
| US7671809B2 (en) | 2006-03-14 | 2010-03-02 | Getac Technology Corporation | Antenna device with ion-implanted antenna pattern |
| US7768461B2 (en) | 2006-04-17 | 2010-08-03 | Getac Technology Corporation | Antenna device with insert-molded antenna pattern |
| US7825862B2 (en) | 2007-06-01 | 2010-11-02 | Getac Technology Corporation | Antenna device with surface antenna pattern integrally coated casing of electronic device |
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