JPS5858060A - Control apparatus of warming effect in ultrasonic treating device - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed Description of the Invention] The present invention provides an ultrashort wave treatment device that performs thermal therapy using electromagnetic waves in the ultrashort wave band with a frequency of 70 to 100 MHz and the heat transmission effect that is transmitted through each human body and generated within the body. The present invention relates to a control device for thermal effects.

In the conventional ultrashort wave therapy device, as shown in Figure 1, the ultrahigh frequency wave output in the oscillation circuit is oscillated at a frequency of -111:0, and the tIC pressure is sufficient with the 2-wave amplifier circuit. After excitation, the power is amplified by 5 to a specified amount in the power amplification circuit C), and further, the match between the human body impedance and the characteristic impedance of the transmission line is adjusted or tuned in the output matching circuit 0, This eliminates high wave components relative to the output fundamental frequency, and enables power to be supplied with maximum efficiency against the inductor.

The device transmits continuous light to the human body through the therapeutic conductor @ (6), but at that time, the difference in dielectric constant of each part of the human body causes the treatment device to be affected! Since the load impedance differs, in order to operate the treatment device at maximum output power, the output matching circuit ◎ should be tuned to match the impedance of the human body part that will be treated. It is necessary to perform four adjustments.

This conventional ultrashort wave treatment device has 1. To adjust the thermal effect on the patient, select the optimal amount of radiation for the disease to be treated, and further adjust the variable capacitor and other adjustment means (of the main body of the treatment device using F11a) according to the appropriate thermal sensation of the gyri. Output matching 4M
(It was determined by taking the tuning number of D5.

Fig. 2 shows the tuning characteristics of the power amplification circuit C) and the output matching circuit ID).If the tuning point is at the microwave output frequency 80, the microwave output power at that time is the maximum output power Pa, and when this Po At the maximum treatment output point, the human body feels the warmest temperature and the most powerful treatment can be performed.However, in order to lower the crystal heat effect, the output power is lower than 8J11 human output'IT power Po, for example, when used in a The force amplifying circuit (C) serves as a load on the power amplifying circuit (C) and maintains a mismatched state with respect to the human body. Applying pressure to semiconductors such as vacuum tubes and transistors, or decreasing output efficiency, increases the power consumption of the amplifying element and causes it to generate heat, which can cause extremely large stress, causing the Il of the amplifying element to shrink or malfunction. It's something that happens.

In addition, when adjusting the thermal effect, that is, adjusting the very high frequency output power, as in the past, by using the output tuning characteristic curve of the power amplifier circuit (C), the tuning characteristic curve is usually adjusted by removing high frequency components and adjusting the output power. In order to set the output frequency to a certain degree steeply around the output frequency 80 in order to improve efficiency, setting the output power to less than the maximum output power requires very delicate adjustment.

In view of the above-mentioned problems, the present invention is designed to make it possible to always adjust the thermal effect on the human body by adjusting the ultra-high frequency output at an optimum amount, that is, at the maximum output power, thereby preventing damage to the power amplifying element. It is important to reduce the consumption 'tl(t) because it can be adjusted to achieve maximum efficiency.

The circuit configuration of the ultrashort wave treatment device of the present invention is basically the same as the conventional one, but is it newly developed? Eight circuits G1 are connected to the oscillator circuit, and one circuit ICI is connected to the output adjustment circuit I11, which is connected to a variable resistor for adjusting the ON10FF ratio in the reference oscillation period. is connected. In addition, the control circuit 0 has an output matching circuit (a selector switch for making the oscillation circuit operate regardless of No. 11 from Il).
J) is connected. NaoffQ i! '+li: Source circuit.

Embodiments of the present invention will now be described with reference to the drawings.

The oscillation circuit diagram shows transistor rll and crystal resonator (2+
It is constructed by oscillating very high frequency waves.

The oscillation signal is input to a capacitor (an amplification circuit made up of transistor +51 via a resonant circuit made up of 31 and Coil/L/14+) and amplified in voltage. In order to set this output power to a large power, an amplifier circuit IBI is further provided which is connected to the transistor ζ6), and the final stage power amplifier circuit C) is amplified to a power sufficient for each drive. Consists of power amplification circuit C11 Odoran sister 171,
After increasing the power to the specified value, the coil +l'1lr
91f1011koyy'nsa (IIIIL)
The output matching circuit ◎ composed of the Lima capacitor 1131 and the variable capacitor/Ill attenuates the high-order high frequency and deceives the fundamental wave number component, and the variable capacitor f14) is used to efficiently transmit the power to the conductor @■. Same as the characteristic curve shown in Figure 2! 1lW4 adjustment is performed.

Next, the very high frequency output cutoff control@J circuit that corresponds to the present invention is as follows:
PUT (Programmable Unijunction Transistor): The first oscillation circuit (consisting of +51 (determines the reference oscillation period TG and generates it as a trigger signal)) and the pulse duty (ON10FF ratio) during this oscillation/oscillation period. The trigger signal is determined by the variable resistor 1161 and generated as a trigger signal. and L t2 hour open FF
The output adjustment oscillation circuit fIl formed by the logical OR circuit r181 and the flip-flop circuit a9, etc.
It consists of a control circuit G) composed of a resistor 1"2αr20 and a diode force. This control circuit 6)
Accordingly, the intermittent output signal generated by the very high frequency wave in the crystal oscillator circuit and the output adjustment oscillator circuit is synchronized, as shown in Fig. 4, 1b.
)1 As shown in the figure, this is controlled to an intermittent very high frequency wave. The intermittent ultra-high frequency waves controlled in this way are amplified and tuned by the amplifying circuit (Bl and output matching circuit C) as described above, and then transmitted through the conductor through the human body. It is something that will be done.

The thermal effect can be adjusted by adjusting the variable resistor (c) to the maximum ON time of the reference oscillation period T, as shown on the left side of Figure 4.
The output signal intermittent at the F ratio is continuously sent to the control circuit G).
With this control circuit ICI, the very short wave generated in the oscillation circuit (8) is turned ON as shown on the left side of Fig. 4 fbl.
It is synchronized as an intermittent waveform ultrashort wave with a 10 F F ratio, and this intermittent waveform ultrashort wave is injected into the human body through a conventional method and a trap-like process, but the heat sensation felt in the human body becomes stronger. If the oscillation circuit (4
) The ultrahigh frequency waves repeat intermittent oscillations in synchronization as shown on the right side of Figure 4, fbl, and the time for each human body is shortened and the thermal effect is also reduced. In this way, it turns on/off sequentially.
By changing the F ratio, the thermal effect can be successively changed, and the output power P at each adjustment in A is expressed by the following equation.

P: Output power PO: Maximum output power T: Reference oscillation - 1st period Ll: Base rod oscillation period 1 turn-on time 0N1
As the 0FF ratio changes, the output power P increases in January, and the larger the output power P is, the stronger the culm temperature heat effect is, and conversely, the smaller the output power is, the weaker the width heat effect is. The setting of the quasi-oscillation interval 'r is set to 0.0, which is based on the effect of the N4 thermal sensation caused by the transmission of ultra-high frequency waves through the human body. /second~/,
It is best to set it to about 0 seconds. If the reference oscillation period T is set longer than this, the thermal sensation will also be intermittent in response to the intermittent output of ultra-high frequency waves, which will be unnatural, and if it is shorter than the average output power, the thermal effect felt by the human body will decrease rapidly. It is no longer appropriate because it is no longer possible to do so.

The ultra-high frequency treatment M using intermittent output control of ultra-high frequency waves of the present invention can easily switch the thermal effect, and the number of switching stages of the thermal effect is greater than before, but it does not damage the electron amplification element, so failures can be prevented. This is extremely low, the service life of the parts is long, there is no need to replace parts, and the power consumption efficiency is high, so we can provide an inexpensive ultrashort wave treatment device that uses S power. This is something that can make a great contribution to the field.

[Brief explanation of the drawings] Figure 1 is a block diagram of a conventional ultrashort wave treatment device, Figure 2 is a diagram of the a characteristic curve vA of the power amplification circuit, and Figure 3 is a block diagram of an ultrashort wave treatment device of the present invention. diagram,
In Figure 4, (a) shows the intermittent oscillation waveform of the output adjustment oscillation circuit (1), the very high frequency output waveform from the BL conductor, and Figure 5 shows the intermittent oscillation waveform of the output adjustment oscillation circuit (1). In the figure, (5) is a very high frequency oscillation circuit.)) is an amplification circuit.C) is a power amplification circuit.
-'k Fl is the adjustment means C) is the control circuit
tj output for the variable resistor (B circuit rJl is the changeover switch ■ is the IK@ circuit (2) The crystal oscillator C1 071 is PUT The output is the variable resistor (1
81 is a logic OR circuit 1'1g is a flip-flop circuit 1-1 Fig.

Claims (1)

[Claims] Ultra-high frequency oscillation circuit in the electrical circuit of the ultra-high frequency treatment device.
A control circuit number is connected to the control circuit number for controlling the output interruption period of the reference oscillation period of this oscillation circuit, and an oscillation circuit for output adjustment is connected to the control circuit, which determines #Js when the output is interrupted in the reference@oscillation period of the oscillation circuit. The output adjustment oscillation circuit has ON10 F F tk, iK'! in the reference oscillation period. I-type reading 1 B 11 Changing regulator connected to ultra short wave treatment a
+ Control device for thermal effects in tr.