JPS58184944A - Pattern forming material - Google Patents
Pattern forming materialInfo
- Publication number
- JPS58184944A JPS58184944A JP6898682A JP6898682A JPS58184944A JP S58184944 A JPS58184944 A JP S58184944A JP 6898682 A JP6898682 A JP 6898682A JP 6898682 A JP6898682 A JP 6898682A JP S58184944 A JPS58184944 A JP S58184944A
- Authority
- JP
- Japan
- Prior art keywords
- methacrylate
- polydimethylbenzyl
- electron beams
- alkaline
- forming material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
（ｄ）発明の技術分野
本発明は電子線等の放射線をこ感度を有し、ドライエツ
チング：こ対し対抗性の大きいポジ型のパターン形成材
料４こ関するものである。Detailed Description of the Invention (d) Technical Field of the Invention The present invention relates to a positive pattern forming material that is sensitive to radiation such as electron beams and highly resistant to dry etching. .
（ｂ） 技術の背景
近来ＩＣ，ＬＳＩ等の半導体装置は、益々高缶度：こ集
積化する事が要求され、そのため−子線等の波長の短い
放射線（こ感度を有し、該放射線が照射されることで、
ポリマーの主鎖が切断され、微細なパターンが得られる
ポジ型のパターン形成材料が望まれるようをこなってさ
ている。そしてｆ＆細））メーンを得るためｉこｌυ記
ポジ型のレジストパターンを電子線等の放射巌各こより
形成した恢、そのＦの酸化膜等のエツチング曇こは、プ
ラズマエツチング法が用いられるようになっている。(b) Background of the technology In recent years, semiconductor devices such as ICs and LSIs are required to be more and more highly integrated. By being irradiated,
A positive pattern-forming material in which the main chain of the polymer is cleaved and a fine pattern can be obtained has been desired. In order to obtain the f&f and thin)) main resist pattern, a positive resist pattern was formed using a radiation beam such as an electron beam. It has become.
（Ｃ） 従来技術と問題点
従来このようなイ子縁台こ感度を有するポジ型のレジス
ト剤としては、例えばポリメチルメタアクリレイト（略
称ＰＭＭＡ）やボ゛リブテンサルフォン（略称ＰＢＳ）
等があるが、これらはいずれも電子線に対しては感
度を有するが、フッ素ガスプラズマ等を用いたプラズマ
エツチングに対しては対抗性が弱いといった欠点を有し
ていた。(C) Prior Art and Problems Conventionally, positive resist agents with this kind of sensitivity include polymethyl methacrylate (abbreviated as PMMA) and polybutene sulfone (abbreviated as PBS).
Although these methods are sensitive to electron beams, they have the drawback of being weakly resistant to plasma etching using fluorine gas plasma or the like.
ここでこのようなＰＭＭＡやＰＢＳ等のポジ型のレジス
ト剤は、電子線のような放射線の照射番こ対して、照射
された部分で容易にポリマーの主鎖が切れて低分子量の
状態となり、この部分のみがレジスト除去剤に容易・こ
溶解するような性簀を有していた。Here, when positive resist agents such as PMMA and PBS are irradiated with radiation such as electron beams, the main chain of the polymer is easily broken at the irradiated area, resulting in a low molecular weight state. Only this part had a property that was easily dissolved in the resist remover.
従って、このような放射縁台こより容易に分解する材料
をレジスト材料としていたため、当然ガスプラズマ中に
さらされると容易にレジスト材が分解し、レジスト４と
しての役Ｉ十分果すことができなρ・った。Therefore, since the resist material is made of a material that easily decomposes from such a radiation edge table, the resist material naturally decomposes easily when exposed to gas plasma, and cannot fully fulfill its role as the resist 4. It was.
ｔａＩ 発明の目的
本発明は上述しｆこ欠点を除去し、電子線のような放射
線に対して充分な感度を有し、かつプラズマエツチング
門こ対して対抗性の大きいポジ型のパターン形成用材料
の提供を目的とするものである。TAI OBJECTS OF THE INVENTION The present invention eliminates the above-mentioned drawbacks, provides a positive pattern forming material that has sufficient sensitivity to radiation such as electron beams, and is highly resistant to plasma etching. The purpose is to provide the following.
（ｕ） 発明の構成
かかる目的を達成するための本発明のパターン形成材す
は、ポリジメチルベンジルメタクリレートとアルカリ性
薬品（こ可溶な有機−分子材とからなることｋＮ微とす
るものである。。(u) Structure of the Invention To achieve the above object, the pattern forming material of the present invention is composed of polydimethylbenzyl methacrylate and an alkaline chemical (a soluble organic molecular material). .
（１〕 発明の実施真 以丁本発明の実鬼例蚤こつき詳細に説明する。(1) Reality of implementation of the invention The actual example of the present invention will now be described in detail.
確認されている。（第：３０１！ｉｊ鳥分子学会予禍果
２号Ｐ ４２３ ）
８ 、。Confirmed. (No. 301! ij Avian Molecular Society Preliminary Results No. 2 P 423) 8.
そこで、このポリジメチルベ／ジルメタクリレ゛１′刊
トを、？・わゆるＩｎｈｉｂｉｔｏｒ （溶解阻止剤す
として用いること（こよりＥ、Ｂ感度を持つ有用なポジ
レジストを得ることができる。So, this polydimethyl base/dyl methacrylate 1' publication?・So-called inhibitor (used as a dissolution inhibitor) (useful positive resists with E and B sensitivities can be obtained from this).
すなわち、アルカリ可溶性−分子、例えば次式で表わさ
れるボ１ｊヒドロ午シスチレ゛眉こ、ポリン −メチ
ルベンジルメタクリレートを ５〜ＩＯ’ｗｔ形の割合
で添加するとこの混合物はアルカリ溶液に不等となる。That is, when an alkali-soluble molecule, such as polymethylbenzyl methacrylate of the following formula, is added in a proportion of 5 to IO'wt, the mixture becomes unequal to an alkaline solution.
次いでＥ、Ｂ照射を行なうとポリヒドロキンスチレンの
アルカリ溶液−＼の溶解を阻止していたポリジメチルベ
ンジメタクリレートが分解しカルボンｒＲ？生成する。Next, when E and B irradiation were performed, polydimethylbendimethacrylate that had been blocking the dissolution of the alkaline solution of polyhydroquine styrene was decomposed and carbon rR? generate.
このことをこより、ホリノメチルベンン′メタクリ七−
トの溶解阻止性が失な□
われ、さら（こカルボン酸が新た（こ生成したことによ
りポリヒドロキンスチレンのアルカリ浴解性が飛電的に
上昇する。この結果照射部が選択的εこアルカリ可溶と
なりパターン形成が可能となる、以上のようＶこ、アル
カリ町溶性高分子とボリア′メナ紗べ／ジルメタクリレ
ートとにより、副感度７エに、Ｂ用ホジレノストを得る
ことができる。又、上記したアルカリ性溶液としては、
有機アミン水＃液〔市販品としてはＭＰ ’３１２’
（ンップレー社）。Based on this, holinomethylbenne'methacry7-
The dissolution inhibiting properties of the polyhydroquine styrene are lost, and the dissolution of the polyhydroquine styrene in an alkali bath increases electrostatically due to the formation of new carboxylic acids.As a result, the irradiated area becomes selectively By using the above-mentioned alkali-soluble polymer and boria'menasabe/dyl methacrylate, which become soluble and allow pattern formation, it is possible to obtain a B-use hojilenost with a subsensitivity of 7E. As the alkaline solution mentioned above,
Organic amine water #liquid [Commercially available product is MP '312'
(Npley Co., Ltd.).
Ｎ〜ｌｌ’ｌ’、東京応化工業））、無機アルカリ水溶
液等を用いることができるっニルご、っ手口ｐしｌ（”
λセ１グ’、’ Ｉ−’−Ｌ １４二、実施例１
目Ｉ己した、ポリヒドロキンスチレン９５ 恵ｉｔ 邸
にホリノメチ？レベンジルメタクリレート５重ｉ部を添
加し、これをメチルセロソルブアセテ−トをこ溶解して
２５ｗｔ％溶液とする。これを５１ウエハー１ニスピノ
コートし １μｍ厚のレジスト被膜な得る。N~ll'l', Tokyo Ohka Kogyo)), inorganic alkali aqueous solution, etc. can be used.
λSe1g','I-'-L 142, Example 1 I took the polyhydrokine styrene 95 Megumi and put it in the house? Five parts of lebenzyl methacrylate are added, and methyl cellosolve acetate is dissolved therein to form a 25 wt % solution. This was coated on 51 wafers with one spino coating to obtain a resist film with a thickness of 1 μm.
次いで加連越圧２０Ｋｅｖの電子線（こより所定のパタ
ーンをこ露光しＭＦ３１２５０９６水溶液を二より現象
したと二ろ］ ＸＩＬＩ−・ｃ・７−以上の感度を得た
つ又、上記材料を８１ウエハー上をこ塗布し、Ｃ）ＩＦ
。Next, a predetermined pattern was exposed to an electron beam with an overpressure of 20 Kev, and an aqueous solution of MF3125096 was exposed to the electron beam. C) IF
.
ガスを用いてプラズマエツチングでのエツチング速度を
測定したところＰ〜ｉＭＡの約ｈ（、のエツチング速度
であった。このときのエツチング装置は、対向ｖｔ極型
１周波赦１３．５６ＭＨ２電諒を用いてし・る。When the etching speed of plasma etching using gas was measured, the etching speed of P to iMA was approximately h(,. Teshiru.
エツチングＱ）条件は、ガス圧０．０１〕ｔｏｒｒ、１
．ｔｌ ＫＷを印加した。こｔＬｉこよりドライエッナ
ング蚤こ対する対抗性は大１１ｆ！ｉこ向上しているこ
とが判明した。Etching Q) conditions are gas pressure 0.01] torr, 1
．． tl KW was applied. The resistance against dry etching fleas is 11f! It turned out that there was an improvement.
実施例２
スチレン／′アクリル殿ＪＩ４１ｈ
９０７量部にボリジメチルペンジルノタクリレート１０
重量部を添加し１ これをメチルセロソルブアセテート
をこ溶解して２すｗｔ±溶液とする。これヲ８１ウェハ
ーＥこスピンコードして１μＭ厚のレジスト被膜な得る
。次いで実施ｆ４１と同様なこ電光現像したところ５ｘ
ｌｕ”ｃ７’暦以上の感度を得た、又、実施例１と同様
（こＣＨＦ、ガスでのエツチング速度を測定したところ
ＰＭＭＡの約１．′、、、のエツチング速度であった。Example 2 907 parts of styrene/acrylic JI41h and 10 parts of boridimethylpenzyl notacrylate
Add 1 part by weight and dissolve methyl cellosolve acetate to make a 2wt± solution. This was spin-coated on 81 wafers to obtain a resist film with a thickness of 1 μM. Next, I developed the same photo as in Example F41 and it was 5x.
As in Example 1, the etching rate with CHF gas was measured and was approximately 1.0% higher than that of PMMA.
営） 発明の効果
以上述べたよう番こ本発明のポジ型パターン形成材料）
こよれば、電子線に対する感度を低下することなく、ド
ライエ、チングに対する対抗性の強い材料が得られ、−
子線等の従来用いられていた紫外光よす渡反の短い光ｍ
を用いた微細パターンの形成が飛躍的に容易となる有点
を生じる。Effects of the Invention As stated above, the positive pattern forming material of the present invention)
Accordingly, a material with strong resistance to dry etching and tinging can be obtained without reducing sensitivity to electron beams, and -
Conventionally used ultraviolet light, such as a sub-ray, is a short light beam.
This creates a point that makes it dramatically easier to form fine patterns using the method.
Claims (1)
Ｉこ４溶な有ＷＡ＾分子材とからなることを特徴とする
パターン形成材料。A pattern forming material comprising polydimethylbenzyl methacrylate and an alkaline-soluble molecular material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6898682A JPS58184944A (en) | 1982-04-23 | 1982-04-23 | Pattern forming material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6898682A JPS58184944A (en) | 1982-04-23 | 1982-04-23 | Pattern forming material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58184944A true JPS58184944A (en) | 1983-10-28 |
| JPH0354332B2 JPH0354332B2 (en) | 1991-08-19 |
Family
ID=13389489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6898682A Granted JPS58184944A (en) | 1982-04-23 | 1982-04-23 | Pattern forming material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58184944A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0440374A2 (en) * | 1990-01-30 | 1991-08-07 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
-
1982
- 1982-04-23 JP JP6898682A patent/JPS58184944A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0440374A2 (en) * | 1990-01-30 | 1991-08-07 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
| US5350660A (en) * | 1990-01-30 | 1994-09-27 | Wako Pure Chemical Industries, Ltd. | Chemical amplified resist material containing photosensitive compound capable of generating an acid and specific polystyrene copolymer having functional groups that become alkali-soluble under an acid atmosphere |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0354332B2 (en) | 1991-08-19 |
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