JPS58165056A - Probe card - Google Patents
Probe cardInfo
- Publication number
- JPS58165056A JPS58165056A JP4843482A JP4843482A JPS58165056A JP S58165056 A JPS58165056 A JP S58165056A JP 4843482 A JP4843482 A JP 4843482A JP 4843482 A JP4843482 A JP 4843482A JP S58165056 A JPS58165056 A JP S58165056A
- Authority
- JP
- Japan
- Prior art keywords
- probe card
- support
- card body
- insulating material
- probe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明５は半導体素子の測定に使用されるプローブカー
ド化係り、特に超低温又は超高温雰囲気での使用に適し
たプローブカードに関する。。DETAILED DESCRIPTION OF THE INVENTION The present invention 5 relates to a probe card used for measuring semiconductor devices, and particularly to a probe card suitable for use in an ultra-low temperature or ultra-high temperature atmosphere. .
近年、半導体素子の動作の高速化及び信頼性の向上−こ
伴い、これらの素子の測定も極めて特殊な、或いは過酷
、な雰囲気で行われるようになってきた。In recent years, as the operation speed and reliability of semiconductor devices have increased, measurements of these devices have come to be carried out in very special or harsh environments.
例えば、高速コンピュータ、−に使用されるジロセフン
ン素子の如きは、素子の超伝導現象を得る必要があるた
めに、マイナス２７０℃付近で測定が行われる。For example, measurements are carried out at around -270° C. for devices such as those used in high-speed computers because it is necessary to obtain superconductivity in the device.
し力―しながら、主として銅張ガラス布エポキシ基輯よ
りなる従来のプローブカードは、かかる過。However, conventional probe cards made primarily of copper-clad glass cloth epoxy bases suffer from such overload.
酷な条件下で使用されると基板の機械的強度の劣化によ
るプローブ男−ドの破損、プローブカードのソリ及びプ
リント配線の剥離等を引き起こすので、かかる条件下で
あ一用゛に到底耐えることができないものである。If used under harsh conditions, the mechanical strength of the board may deteriorate, causing damage to the probe male lead, warping of the probe card, and peeling of printed wiring, so it must be able to withstand use under such conditions. This is something that cannot be done.
本発明は上記事情１ヒ鑑みてなされたもので、その目的
とするところは、超低温及び超高温雰囲気での使用に耐
え得るプロ−ブカードを提供するこ、２＋ｃあ、。 □
パ
また、本発明の一つは、上記雰囲気での高周波測定に適
したブローブクードを提供することをも工よＬ−Ｃい、
。□、：ン）：
そして、そのため：ｉｃ本発明は当該絶縁材料よりなる
基板の表面にブリット配線の形成されたプローブカード
本体の中央開口部の裏面に、当該絶縁材料よりなり、半
導体素子の電極の位置に対応して鉛直に複数個の貫通孔
が穿設された支持体を取り付ける一方、弾性を有する複
数個の金属ワイヤの一端を前記プローブカード本体に形
成されたプリント配線にそれぞれ接続するとともに、そ
の他端を前記支持体の貫通孔にそれぞれ挿入して、その
先端部を支持体下面より鉛直に突出させてなることを主
たる特徴としている。The present invention has been made in view of the above-mentioned circumstances, and its object is to provide a probe card that can withstand use in ultra-low temperature and ultra-high temperature atmospheres. □
Another aspect of the present invention is to provide a probe suitable for high frequency measurements in the above atmosphere.
. □, :n): And therefore: IC The present invention provides electrodes of semiconductor elements made of the insulating material on the back side of the central opening of the probe card main body, in which the bullet wiring is formed on the surface of the substrate made of the insulating material. Attach a support having a plurality of vertical through-holes corresponding to the positions of the probe card, and connect one end of a plurality of elastic metal wires to the printed wiring formed on the probe card body, respectively. The main feature is that the other ends are inserted into the through holes of the support, and the tip portions thereof protrude vertically from the lower surface of the support.
以下、本発明に係るプローブカード（以下「本発明品」
と呼ぶ）の一実施例について図面とともに説明する。Hereinafter, the probe card according to the present invention (hereinafter referred to as "the product of the present invention")
One embodiment of the present invention will be described with reference to the drawings.
第１図は本発明品の一実施例を表面側より略示した外観
斜視図である。同図膠ζおいて、】は主たる成分が５ｊ
０２（略４６％重量比）、Ａｌ１２０３（略１６％）、
Ｍ ｇ Ｏ（略１７％）、に２０（略１０％）であり
、結晶化ガラス系絶縁材料よりなる加工性の良好な基板
の表面にプリント配！ＩＩ２の形成された略矩形状のプ
ローブカード水泳てあり、プローブカード本体１の中央
には開口１が設けられているとともに、その一方の短辺
部には外部接続端子としての短柵状の接触板４が並設さ
れ前記プリント配線２の一方端と接続している。そして
、プリント配線２の他方端は前記開口部３と同心に周設
・された接続−子５にそれぞれ接続し終端している。か
かるプリン・ト配線”２、接触板４及び接続端子５は、
例えばスクリーン印Ｊｌｌ−とよ、り導電性ペーストで
配線パターンを基板表面に印刷し、かかる後に高温雰囲
気で焼結形成される。 ・
、一方、・６は弾性を有する導電性の金属ワイヤよりな
る探針であり一例えば金、白金、銅−銀を主成分どする
金属ワイヤが用いられる。探針６の一方端は、例えば銀
ろう等を用いて前記プローブカード本体１の接続端子５
にそれぞれ接続されているとともに、その他端は後述す
、るようにプローブカード本体１の裏面に取り付けられ
ている支持体７を貫通□している。FIG. 1 is an external perspective view schematically showing an embodiment of the product of the present invention from the front side. In the same figure glue ζ, the main component is 5j
02 (approximately 46% weight ratio), Al1203 (approximately 16%),
MgO (approximately 17%) and 20 (approximately 10%), printed on the surface of a substrate made of crystallized glass-based insulating material with good workability! The probe card body 1 has an opening 1 in the center thereof, and a short fence-like contact as an external connection terminal on one of the short sides thereof. A board 4 is arranged in parallel and connected to one end of the printed wiring 2. The other end of the printed wiring 2 is connected to and terminated in a connecting element 5 which is circumferentially provided concentrically with the opening 3. Such printed wiring 2, contact plate 4 and connection terminal 5 are as follows:
For example, a wiring pattern is printed on the surface of a substrate using a conductive paste such as a screen print, and then sintered in a high temperature atmosphere. On the other hand, .6 is a probe made of an elastic conductive metal wire, and for example, a metal wire whose main component is gold, platinum, or copper-silver is used. One end of the probe 6 is connected to the connection terminal 5 of the probe card body 1 using, for example, silver solder.
The other end passes through a support 7 attached to the back surface of the probe card main body 1, as will be described later.
第２図は本発明品の一実施例の部分断面、を略示する図
解図である。同図・：において第１図と間−物は同一符
号で示しである。支持体７は主たる成分が５ｉ０２（略
４６％重量比）、べ２０３（略１６％）、Ｍｇ０（略１
７％）、ｋ２０（略１０％）であり、加工性の良好な・
、結晶化ガラス系絶縁材料により、すり林状に形成され
ており、その底部には例えば、レーザ加工等により、測
定される半導体素子の電極と同じ位置関係で複数個の貫
通孔８が鉛直に穿設されている。かかる支持体７はプロ
ニブカー下本体１の中央の開口部３の裏面側より４前記
間口部と同心に取り付けられている。そして、前述゛し
たように、接続端子５に一端の接続された探針６の他端
部は前記支持体７の貫通孔８に摺動１在に挿入され、そ
の先端部は支持体７の、下面より鉛直に突出している。FIG. 2 is an illustrative view schematically showing a partial cross section of an embodiment of the product of the present invention. In the same figure, the same reference numerals as in FIG. 1 indicate the same parts. The main components of the support 7 are 5i02 (approximately 46% weight ratio), Be203 (approximately 16%), and Mg0 (approximately 1
7%), k20 (approximately 10%), and has good workability.
, is formed in the form of a forest of glass-ceramic insulating material, and a plurality of through holes 8 are vertically formed at the bottom by laser processing or the like in the same positional relationship as the electrodes of the semiconductor element to be measured. It is perforated. The support body 7 is attached concentrically with the opening 4 from the back side of the central opening 3 of the lower main body 1 of the pro nib car. As mentioned above, the other end of the probe 6, one end of which is connected to the connection terminal 5, is slidably inserted into the through hole 8 of the support 7, and the tip thereof is inserted into the through hole 8 of the support 7. , protruding vertically from the bottom surface.
゛ ・次゛に、上述した如
き発明品を利用して形成され、特に超低温又は超高温雰
囲気での高周波測定に適したもう一つの本発明番こ係る
プローブカードについて説明する。 Ｉ・・ ・
、第３図は高周波測定に適した本発明
品の部分断面を略示す・る図解図であり、同図に゛おい
て第１図及び第２図と同一物は同一符号で示しである。Next, another probe card of the present invention, which is formed using the above-mentioned invention and is particularly suitable for high frequency measurements in ultra-low temperature or ultra-high temperature atmospheres, will be described. I... ・
, FIG. 3 is an illustrative view schematically showing a partial cross section of a product of the present invention suitable for high frequency measurement, and in this figure, the same parts as in FIGS. 1 and 2 are designated by the same reference numerals.
すなわち同図（イ）における探針６は同図（ロ）４ζ示
すように、その両端部を除き絶縁物９を介して導電性膜
１０で被覆されている。それ故この導電性膜１０をそれ
ぞれ接地すれは、探針６がシールドされるので高周波測
定を正確に行うことができる。That is, the probe 6 in FIG. 4(A) is covered with a conductive film 10 with an insulator 9 interposed therebetween, except for its both ends, as shown in FIG. 4(B) 4ζ. Therefore, by grounding each conductive film 10, the probe 6 is shielded, so that high frequency measurements can be performed accurately.
以上の本発明品の一実施例の説明より明らかなように１
本発明に係るプローブカードは耐熱性の優れた結晶化ガ
ラス系絶縁材料より形成されているため超低温又は超高
温雰囲気下においてもプロ □−ブカードの破損等を引
き起すことはない。As is clear from the above description of one embodiment of the product of the present invention, 1
Since the probe card according to the present invention is made of a crystallized glass-based insulating material with excellent heat resistance, the probe card will not be damaged even in an ultra-low temperature or ultra-high temperature atmosphere.
また、本発明に係るプローブカードの探針は、プローブ
カード本体の裏面−ζ取り付けられた支持 □体の下面
より突出しているので、プローブカード本体と超低温又
は超高温状態の半導体素子との間に適当な間隙を形成し
つるため、プローブカード本体が直接に超低温又は超高
温にさらされること→
はない。In addition, since the probe of the probe card according to the present invention protrudes from the lower surface of the support body attached to the back side of the probe card body, there is a gap between the probe card body and the semiconductor element in an ultra-low temperature or ultra-high temperature state. Since an appropriate gap is formed for hanging, the probe card body is not directly exposed to extremely low or high temperatures.
さらに、本発明の一つにあっては、超低温雰−気の過酷
な条件下で、高周波測定ができるので、例えばジッセフ
ソン素子の如き一高速動作をする゛素子の測定に極めて
有用である。 ′尚、実施例において、プロー
ブカード本体は略−矩形状であるとして説明したが、こ
れに限られることなく、例えは円形状であってもよい。Furthermore, one aspect of the present invention allows high frequency measurements to be made under severe conditions in an ultra-low temperature atmosphere, making it extremely useful for measuring devices that operate at high speeds, such as Gisefson devices. 'In the embodiments, the probe card main body has been described as having a substantially rectangular shape, but the present invention is not limited to this, and for example, the probe card main body may have a circular shape.
また、実施例で説明した支持体７は例えば、第４図（イ
）に示す如き位置合せ用の小孔１１を複数個穿設するも
のであってもよい。すなわち、小孔１１は、 同図（ロ
）に示すように例えば、半導体素子１２をそれぞれ区切
っているスクライプライン１３の交点（同図においてＯ
印部）に対応して少くとも複数個穿設される。そして、
この小孔１１に関連して貫通孔８を設けることにより、
測定時の位置合せをスクライブライン１３の交点が小孔
１１の中心になる如く行えば、探針６が半導体素子１２
の所定の電極１４上にそれぞれ位置することになるので
、探針６の位置合せを容易ｉこ行うことかできる。Further, the support body 7 described in the embodiment may have, for example, a plurality of small holes 11 for positioning as shown in FIG. 4(A). That is, as shown in FIG.
At least a plurality of holes are drilled corresponding to the markings). and,
By providing the through hole 8 in relation to this small hole 11,
If alignment during measurement is performed so that the intersection of the scribe lines 13 is at the center of the small hole 11, the probe 6 will align with the semiconductor element 12.
Since the probes 6 are located on the respective predetermined electrodes 14, the probes 6 can be easily aligned.
第１図は本発明品の一実施例を表面側より略□
示し、た外観斜視図、第２図は本発明品の一実施例一部
分断面を略示する図解図、第３図は高周波測定に適した
本発明品の部分断面を略示する図［第４図は本発明品の
その他の実施例を略示する図解図である。
１・・・プローブカード本体、２・・・配線、３・・・
開口部、４・・・接触板、５・・・接続端子、６・・・
探針、７・・・支持体、８・・・貫通孔、９・・・絶縁
物、１０・・・導電性膜。
特許出願人 日永電子材料株式、会社
代理人弁理士大西孝治
第３図
（イ）
り
（つ）
第４図
（ロ）Fig. 1 is an external perspective view of an embodiment of the present invention from the front side, Fig. 2 is an illustrative view schematically showing a partial section of an embodiment of the invention, and Fig. 3 is a high-frequency measurement. [FIG. 4 is an illustrative view schematically showing another embodiment of the invention product. 1... Probe card body, 2... Wiring, 3...
Opening, 4... Contact plate, 5... Connection terminal, 6...
Probe, 7... Support, 8... Through hole, 9... Insulator, 10... Conductive film. Patent applicant Hinaga Electronic Materials Co., Ltd., company representative patent attorney Koji Onishi Figure 3 (a) Ri (tsu) Figure 4 (b)
Claims (2)
絶縁材料」と呼ぶ）よりなる基板の表面にプリント配線
の形成されたプローブカード本体の中央、の開口部の裏
面・・に当該絶縁材料よりなり、測定される半導体素子
の電極パッドの位置に対応して鉛直に複数個の貫通孔が
穿設された支持体を取り付ける一方、弾性を有する導電
性の金属ワイヤよりなる複数個の探針の一端を前記プロ
ーブカード本体に形成されたプリント配線にそれぞれ接
続するとともに、その他端を前記支持体の貫通孔にそれ
ぞれ挿入して、その先端部を支持体下面より鉛直に突出
させてなることを特徴とするプローブカード。(1) Crystallized glass insulation material that can be machined (hereinafter referred to as “
The center of the probe card body has printed wiring formed on the surface of a substrate made of an insulating material (referred to as "insulating material"), and the back side of the opening of the probe card is made of the insulating material and corresponds to the position of the electrode pad of the semiconductor element to be measured. A support body having a plurality of vertical through-holes is attached thereto, while one end of a plurality of probes made of elastic conductive metal wire is attached to each printed wiring formed on the probe card body. A probe card characterized in that the other ends of the probe card are connected to each other, and the other ends thereof are respectively inserted into through holes of the support, and the tip portions thereof are made to protrude vertically from the lower surface of the support.
の形成されたプローブカード本体の中央の開口部の裏面
に、当該絶縁材料よりなり、測定される半導体素子の電
極の位置に対応して鉛直化複数個の貫通孔が穿設された
支持体を取り付ける一方、その両端部を除いて絶縁性樹
脂を介在させて導電性膜の被覆された、弾性を有する導
電性の金属ワイヤよりなる複数個の探針の一端を前記プ
ローブカード本体に形成されたプリント配線にそれぞれ
接続するとともに、その他端を前記支持体の貫通孔にそ
れぞれ挿入して、その先端部を支持体下面より鉛直に突
出させてなることを特徴とするプローブカード。(2) On the back side of the central opening of the probe card body, which has printed wiring formed on the surface of a substrate made of an insulating material, there is a board made of the insulating material, which is vertically aligned in accordance with the position of the electrode of the semiconductor element to be measured. A support body with a plurality of through holes is attached, while a plurality of elastic conductive metal wires are coated with a conductive film with an insulating resin interposed between the ends. One end of the probe is connected to the printed wiring formed on the probe card body, and the other end is inserted into the through hole of the support, so that the tip protrudes vertically from the lower surface of the support. A probe card characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4843482A JPS58165056A (en) | 1982-03-25 | 1982-03-25 | Probe card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4843482A JPS58165056A (en) | 1982-03-25 | 1982-03-25 | Probe card |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58165056A true JPS58165056A (en) | 1983-09-30 |
Family
ID=12803243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4843482A Pending JPS58165056A (en) | 1982-03-25 | 1982-03-25 | Probe card |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58165056A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6360966U (en) * | 1986-10-08 | 1988-04-22 | ||
| EP0496207A2 (en) * | 1991-01-23 | 1992-07-29 | Eckhard Dr. Ehlermann | Testing device for integrated circuits |
| WO1998011446A1 (en) * | 1996-09-13 | 1998-03-19 | International Business Machines Corporation | Integrated compliant probe for wafer level test and burn-in |
| EP0921401A1 (en) * | 1996-06-28 | 1999-06-09 | Shin-Etsu Polymer Co., Ltd. | Probe and method for inspection of electronic circuit board |
| US6452406B1 (en) | 1996-09-13 | 2002-09-17 | International Business Machines Corporation | Probe structure having a plurality of discrete insulated probe tips |
| US7160825B2 (en) | 2003-09-25 | 2007-01-09 | Sumitomo Metal Industries, Ltd. | Machinable ceramic |
| JP2007085877A (en) * | 2005-09-22 | 2007-04-05 | Yamaha Corp | Probe unit |
| US7282945B1 (en) | 1996-09-13 | 2007-10-16 | International Business Machines Corporation | Wafer scale high density probe assembly, apparatus for use thereof and methods of fabrication thereof |
| US7368924B2 (en) | 1993-04-30 | 2008-05-06 | International Business Machines Corporation | Probe structure having a plurality of discrete insulated probe tips projecting from a support surface, apparatus for use thereof and methods of fabrication thereof |
| WO2012169831A2 (en) * | 2011-06-08 | 2012-12-13 | 수도겐조 | Probe apparatus for testing chips |
-
1982
- 1982-03-25 JP JP4843482A patent/JPS58165056A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6360966U (en) * | 1986-10-08 | 1988-04-22 | ||
| JPH0521021Y2 (en) * | 1986-10-08 | 1993-05-31 | ||
| EP0496207A2 (en) * | 1991-01-23 | 1992-07-29 | Eckhard Dr. Ehlermann | Testing device for integrated circuits |
| US7368924B2 (en) | 1993-04-30 | 2008-05-06 | International Business Machines Corporation | Probe structure having a plurality of discrete insulated probe tips projecting from a support surface, apparatus for use thereof and methods of fabrication thereof |
| EP0921401A1 (en) * | 1996-06-28 | 1999-06-09 | Shin-Etsu Polymer Co., Ltd. | Probe and method for inspection of electronic circuit board |
| US6528984B2 (en) | 1996-09-13 | 2003-03-04 | Ibm Corporation | Integrated compliant probe for wafer level test and burn-in |
| US6452406B1 (en) | 1996-09-13 | 2002-09-17 | International Business Machines Corporation | Probe structure having a plurality of discrete insulated probe tips |
| US7282945B1 (en) | 1996-09-13 | 2007-10-16 | International Business Machines Corporation | Wafer scale high density probe assembly, apparatus for use thereof and methods of fabrication thereof |
| WO1998011446A1 (en) * | 1996-09-13 | 1998-03-19 | International Business Machines Corporation | Integrated compliant probe for wafer level test and burn-in |
| US7160825B2 (en) | 2003-09-25 | 2007-01-09 | Sumitomo Metal Industries, Ltd. | Machinable ceramic |
| JP2007085877A (en) * | 2005-09-22 | 2007-04-05 | Yamaha Corp | Probe unit |
| WO2012169831A2 (en) * | 2011-06-08 | 2012-12-13 | 수도겐조 | Probe apparatus for testing chips |
| WO2012169831A3 (en) * | 2011-06-08 | 2013-03-07 | 수도겐조 | Probe apparatus for testing chips |
| KR101270036B1 (en) * | 2011-06-08 | 2013-06-10 | 수도 겐조 | Probe device for testing ic chip |
| TWI486605B (en) * | 2011-06-08 | 2015-06-01 | Sudo Kenzo | Probe device for testing ic chip |
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