JPS58160320A - Photopolymer composition - Google Patents

Photopolymer composition

Info

Publication number
JPS58160320A
JPS58160320A JP4277882A JP4277882A JPS58160320A JP S58160320 A JPS58160320 A JP S58160320A JP 4277882 A JP4277882 A JP 4277882A JP 4277882 A JP4277882 A JP 4277882A JP S58160320 A JPS58160320 A JP S58160320A
Authority
JP
Japan
Prior art keywords
formula
group
polyamic acid
coating film
amine compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4277882A
Other languages
Japanese (ja)
Inventor
Michimasa Kojima
児嶋 充雅
Fumio Kataoka
文雄 片岡
Kazunari Takemoto
一成 竹元
Fusaji Shoji
房次 庄子
Ataru Yokono
中 横野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Hitachi Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP4277882A priority Critical patent/JPS58160320A/en
Publication of JPS58160320A publication Critical patent/JPS58160320A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:A photopolymer composition capable of forming films with good heat stability at a high sensitivity, prepared by mixing a specified polyamic acid with an amine compound. CONSTITUTION:100pts.wt. polymer consisting mainly of repeating units of formulaI(wherein R<1> is a trivalent or tetravalent organic group, R<2> is a vibalent organic group, M is H or an ammonium ion and n is 1 or 2), e.g., a polyamic acid prepared by reacting pyromellitic dianhydride with 4,4'-diaminodiphenyl ether, is blended with about 10-400pts.wt. amine compound of formula II (wherein R<3> and R<4> are each a lower alkyl, Z is a group of formula III, a group of formula IV, -CH2O- or -CH2NH-, p is 1-3 and q is 2-6), e.g., a compound of formula V. If necessary, a sensitizer (e.g., anthraquinone) may also be used.

Description

【発明の詳細な説明】 本発明は、耐熱性高分子となる新規な感光性。[Detailed description of the invention] The present invention is a novel photosensitive heat-resistant polymer.

重合体組成物に関する。TECHNICAL FIELD The present invention relates to polymer compositions.

従来、耐熱性高分子となる感光性重合体組成。Traditionally, photosensitive polymer compositions are heat-resistant polymers.

物として、何1ポリイミドの前駆体たるボリアれド酸を
主成分とするポリマに下式[110に示すよ。
As a product, the following formula [110] shows a polymer whose main component is polyamide acid, which is a precursor of polyimide.

うな化学線により二層化又は重合可能な炭素−1炭素二
重結合及びアミン基又はその四級化塩を。
A carbon-1 carbon double bond and an amine group or a quaternized salt thereof that can be bilayered or polymerized by actinic radiation.

含む化合物を混合したもの。A mixture of compounds containing

(但し、R5は水素又はツーニル基、R6は水素又は低
級アルキル基、R7は置換又は無置換の炭化水素基、R
8は置換又は無置換のアルキル基を表わす。)が知られ
ている。
(However, R5 is hydrogen or a thunyl group, R6 is hydrogen or a lower alkyl group, R7 is a substituted or unsubstituted hydrocarbon group, R
8 represents a substituted or unsubstituted alkyl group. )It has been known.

ワニス状態にある上記ビ1の材料を塗膜とするには、ス
ピナ回転塗布浸漬、噴霧印刷などの手段で金属、ガラス
、半導体などの基板上に塗布製適当な温度で加熱し、ワ
ニスに含まれている溶剤を除去することが必要である。
In order to form a coating film from the material of B1 in a varnish state, it is coated onto a substrate such as metal, glass, or semiconductor by means such as spinner rotation coating, dipping, or spray printing. It is necessary to remove the solvent present.

その際、用。At that time, use.

いられる溶剤としては、ポリアミド酸の溶解性。The solvent that can be used is the solubility of polyamic acid.

の観点からN−メチル−2−ピロリドン、ジメ。N-methyl-2-pyrrolidone, dime.

チルアセトアミド、ジメチルスルホキシドなど。tylacetamide, dimethyl sulfoxide, etc.

高沸点の非プロトン性極性溶媒が主に用いられ1゜これ
らの溶剤を除去し均一な塗膜を得るには少。
Aprotic polar solvents with high boiling points are mainly used, and it is difficult to remove these solvents and obtain a uniform coating film.

くとも80″C以上に加熱する必要があり、従って。Therefore, it is necessary to heat it to at least 80"C or higher.

感光剤も熱安定性にすぐれた材料が必要である。。The photosensitizer also needs to be a material with excellent thermal stability. .

また、当然のことながら感光剤は高感度である。Moreover, as a matter of course, the photosensitizer has high sensitivity.

ことが好しい。That's good.

しかし、従来知られていた〔nT)式で示される感光剤
のうち、Rが7=ニル基でR6が水素の場合、熱安定性
にはすぐれているが、感度数千m J/c、 と著しく
低感度であり実用に供するには致らなかった。
However, among the conventionally known photosensitizers represented by the formula [nT], when R is 7 = nyl group and R6 is hydrogen, the thermal stability is excellent, but the sensitivity is several thousand m J/c, The sensitivity was extremely low and it was not suitable for practical use.

また/<’ 、 R6共に水素の場合、あるいはR5が
水素でRがメチル基の場合、いずれも熱安定性が悪く、
80でで加熱乾燥させると、膜が硬化してし複い紫外線
照射後、現像液によって未露光部を洗い流し、レリーフ
・パターンを得ることができなかった。
In addition, when /<' and R6 are both hydrogen, or when R5 is hydrogen and R is a methyl group, the thermal stability is poor in both cases.
When the film was dried by heating at a temperature of 80°C, the film hardened. After irradiation with ultraviolet rays, the unexposed areas were washed away with a developer, making it impossible to obtain a relief pattern.

本発明の目的は、前記した従来技術の欠点を。The purpose of the present invention is to overcome the drawbacks of the prior art described above.

なくシ、塗膜とした時の熱安定性が良好でかつ。It has good thermal stability when made into a paint film.

高感度な感光性重合体組成物を提供するにある。An object of the present invention is to provide a highly sensitive photosensitive polymer composition.

上記目的を達成すべく鋭意検討した結果  。This is the result of careful consideration to achieve the above objectives.

(α1一般式〔1) (但し1式中Rは3価または4価の有機基 R2は2価
の有機基1Mは水素又はアンモニウムイO オンを表わす。nは1又は2である。)で表わされる繰
り返し単位を主成分とするポリマと。
(α1 general formula [1) (However, in formula 1, R is a trivalent or tetravalent organic group, R2 is a divalent organic group, 1M represents hydrogen or ammonium ion, and n is 1 or 2.) A polymer whose main component is the repeating unit shown.

Ibl一般式CI+) 基、Pは1から3までの整数、qは2から6までの整数
を表わす。)で表わされるアミン化合物と。
Ibl general formula CI+) group, P represents an integer from 1 to 3, and q represents an integer from 2 to 6. ) and an amine compound represented by

・ 4 ・ lCl必要に応じて加える増感剤とから成る感光。・ 4 ・ A sensitizer consisting of lCl and a sensitizer added as necessary.

性重合体組成物が前記した従来法に比べて塗膜。The coating film of the polymer composition is better than that of the conventional method described above.

とじた時の熱安定性が極めて良好で、しかも高。Thermal stability when closed is extremely good and high.

感度であることを見い出した。I found that sensitivity.

即ち、熱によって重合しにくく、しかも光に対して活性
な二重結合を含むアミン化合物〔■〕式を感光剤として
用いることによりポリアミド酸に感光性を付与せしめる
効果的な方法を見い出した点に本発明の大きな特徴があ
る。
That is, we have discovered an effective method for imparting photosensitivity to polyamic acid by using an amine compound (formula ■) that is difficult to polymerize by heat and contains a double bond that is active against light as a photosensitizer. There are major features of the present invention.

本発明により特に塗膜形成の際の作業性が向上し、しか
も短時間で陽画を形成することが可能となった。
The present invention has improved workability, particularly in forming a coating film, and has made it possible to form a positive image in a short time.

以下1本発明で使用する材料について説明する。The materials used in the present invention will be explained below.

一般式〔I〕で示されるポリアミド酸は、加熱処理によ
ってポリイミドと成り得るものであり。
The polyamic acid represented by the general formula [I] can be converted into polyimide by heat treatment.

これらポリイミドは耐熱性を有する。一般式〔I〕で表
わされる繰り返し単位を主成分とするポリマは、一般式
〔■〕で示されるポリアミド酸のみからなるものでも、
これと他の繰り返し単位との共重合体であっても良い。
These polyimides have heat resistance. A polymer whose main component is a repeating unit represented by the general formula [I] may be one consisting only of a polyamic acid represented by the general formula [■],
It may also be a copolymer of this and other repeating units.

これらの例としてはポリエステルアミド酸、ポリヒドラ
ジドアミド酸などが挙げられる。共重合に用いられる繰
り返し単位の種類、量は最終加熱処理によって得られる
ポリイミドの耐熱性を著しく損なわない範囲で選択する
のが望しい。ポリイミドの耐熱性としては窒素雰囲気中
300〜400vに1時間加熱しても形成したレリーフ
・パターンが保持されるものが望しい。
Examples of these include polyesteramic acid, polyhydrazideamic acid, and the like. The type and amount of repeating units used in the copolymerization are desirably selected within a range that does not significantly impair the heat resistance of the polyimide obtained by the final heat treatment. As for the heat resistance of the polyimide, it is desirable that the formed relief pattern is maintained even when heated at 300 to 400 V for 1 hour in a nitrogen atmosphere.

一般式II)中のR1,R2は、ポリイミドとした時の
耐熱性の面から含芳香族項有機基、含複素壌有機基が望
しい。これらの例はU、S、P、 3 。
R1 and R2 in the general formula II) are preferably aromatic-containing organic groups or complex-containing organic groups from the viewpoint of heat resistance when formed into a polyimide. Examples of these are U, S, P, 3.

179 、614 、 U、S、P、 3.740 、
505 、特公昭4B−2956号に示されている。た
だし、ポリイミドに耐熱性を与えるものであればこれら
に限定されない。
179, 614, U, S, P, 3.740,
505, as shown in Japanese Patent Publication No. 4B-2956. However, the material is not limited to these as long as it imparts heat resistance to polyimide.

R1は具体的には、−0−、−■−〇−00−.  。Specifically, R1 is -0-, -■-〇-00-.  .

−〇−co−■− (式中、結合手はポリマ主鎖のカルボニル基と。−〇−co−■− (In the formula, the bond is with the carbonyl group of the polymer main chain.

の結合を表わし、カルボキシル基は結合手に対。represents a bond, and the carboxyl group pairs with the bond.

などが挙げられる。Examples include.

また、これらがポリイミドの耐熱性に悪影響。In addition, these have a negative effect on the heat resistance of polyimide.

を与えない範囲でアミノ基、アミド基、カルボ。Amino group, amide group, carbo group within the range that does not give.

キシル基、スルホン酸基などの置換基を有して。It has a substituent such as a xyl group or a sulfonic acid group.

いてもさしつかえない。          1.)な
お、一般式〔■〕で表わされるポリアミド酸。
It's okay to be there. 1. ) In addition, polyamic acid represented by the general formula [■].

で好ましいものとしてはピロメリット酸二無水。The preferred one is pyromellitic dianhydride.

物と4.4′−ジアミノジフェニルエーテル、ビ町メリ
ット酸二無水物および5.5’ 、 4.4’−ベンゾ
and 4,4'-diaminodiphenyl ether, bimellitic dianhydride, and 5,5',4,4'-benzo.

フェノンテトラカルボン酸二無水物と4.4−ジ。Phenonetetracarboxylic dianhydride and 4,4-di.

アミノジフェニルエーテル、ピロメリット酸二無水物お
よび5,3 、4.4−ベンゾフェノンテトラカルボン
酸と4.4′−ジアミノジフェニルエーテルおよび4.
4−ジアミノジフェニルエーテル−3−カルボンアミド
、ピロメリット酸二無水0 物および5.5 、4.4−ベンゾフェノンテトラカル
ポン酸二無水物と4.4−ジアミノシフ−ニルエーテル
およびビス(3−アミノプロピル)テトラメチルジシロ
キサンから導れるポリアミド酸などが挙げられる。
Aminodiphenyl ether, pyromellitic dianhydride and 5,3,4,4-benzophenonetetracarboxylic acid and 4,4'-diaminodiphenyl ether and 4.
4-diaminodiphenyl ether-3-carbonamide, pyromellitic dianhydride and 5.5,4,4-benzophenonetetracarboxylic dianhydride, 4,4-diaminosyphenyl ether and bis(3-aminopropyl) Examples include polyamic acid derived from tetramethyldisiloxane.

一般式〔I〕で表わされるポリアミド酸は上記のように
1通常ジアミン化合物に酸二無水物をほぼ当モル量反応
させることによって得られるが、この場合に用いる反応
溶媒としては、反応基質および生成するポリアミド酸の
溶解性等の点から非プロトン性極性溶媒が好しく用いら
れ。
As mentioned above, the polyamic acid represented by the general formula [I] is usually obtained by reacting a diamine compound with an acid dianhydride in an approximately equimolar amount. An aprotic polar solvent is preferably used from the viewpoint of solubility of the polyamic acid.

ろ。N−メチル−2−ピロリドン、 N、N−ジ、メ。reactor. N-methyl-2-pyrrolidone, N,N-di,methane.

チルホルムアミド、 N、N−ジメチルアセトアミド、
ジメチルスルホキシド、7v−アセチル−ε−カプロラ
クタムおよび1.3−ジメチル−2−イミダゾリジノン
などが典型的な例として挙げ。
Chylformamide, N,N-dimethylacetamide,
Typical examples include dimethyl sulfoxide, 7v-acetyl-ε-caprolactam, and 1,3-dimethyl-2-imidazolidinone.

られる。It will be done.

一般式〔■〕で示されるアミン化合物としては以下のも
のなどが挙げられる。
Examples of the amine compound represented by the general formula [■] include the following.

アミン化合物の配合割合は一般式(1)で表わ。The blending ratio of the amine compound is represented by general formula (1).

される繰り返し単位を主成分とするポリマ100゜重量
部に対して10重量部以下400重量部以下で。
10 parts by weight or less and 400 parts by weight or less per 100 parts by weight of the polymer whose main component is a repeating unit.

用いるが、20重量部以上200重量部以下で用い。However, it is used in an amount of 20 parts by weight or more and 200 parts by weight or less.

るのが望しい。上記範囲を逸脱すると感度不足となった
り、現像後の膜質に悪影響をもたらす。
It is desirable to If it deviates from the above range, sensitivity may be insufficient or the film quality after development may be adversely affected.

上記組成物には、感度向上の目的で適宜増感剤を添加し
てもさしつかえないが、添加量はポリマ(1,]とアミ
ン化合物(II、)の総重量の旧重量部以上10重量部
以下の割合で用いるのが望しくこの範囲を逸脱すると現
像性、最終生成物のポリイミドの耐熱性に悪影響をもた
らす。増感剤としてはアントラキノン、2−メチルアン
トラキノン、ベンゾキノン、1.2−ナフトキノン。
A sensitizer may be appropriately added to the above composition for the purpose of improving sensitivity, but the amount added is at least 10 parts by weight based on the total weight of the polymer (1,) and the amine compound (II,). It is preferable to use them in the following proportions; deviations from this range will have an adverse effect on the developability and heat resistance of the polyimide final product.Sensitizers include anthraquinone, 2-methylanthraquinone, benzoquinone, and 1,2-naphthoquinone.

1.4−ナフトキノン、1.2−ベンゾアントラキノン
、ベンゾフェノン、 p、p−ジメチルベンゾフェノン
、ミヒラケトン、2−ニトロフルオレ715−二)ロア
セチンテン。4−ニトロー1−ナフチルアミン、アント
ロン、1.9−ベンズアントロン、シベンザルアセトン
、ヘンツインエーテル、4.4’−ビス(ジエチルアミ
ノ)ペン。
1.4-naphthoquinone, 1.2-benzoanthraquinone, benzophenone, p, p-dimethylbenzophenone, Mihiraketone, 2-nitrofluore 715-di) loacetinthene. 4-Nitro-1-naphthylamine, anthrone, 1,9-benzanthrone, sibenzalacetone, henzine ether, 4,4'-bis(diethylamino)pene.

シフエノンなどが挙げられ、これらは単独ある。Examples include siphenon, which can be used alone.

いは2種以上組み合せて用いてさしつかえない。Alternatively, two or more types may be used in combination.

本発明による感光性重合体組成物は、上記構。The photosensitive polymer composition according to the present invention has the above structure.

成分を適尚な有機浴剤に溶解した浴液状態で用。Used in the form of a bath solution with the ingredients dissolved in an appropriate organic bath agent.

いるが、この場合用いる溶剤としては溶解性の観点から
非プロトン性極性溶媒が望しく、A’−メチル−2−ピ
ロリドン、7v−アセチル−2−ピロリドン、Iv−ベ
ンジル−2−ピロリドン。
However, the solvent used in this case is preferably an aprotic polar solvent from the viewpoint of solubility, such as A'-methyl-2-pyrrolidone, 7v-acetyl-2-pyrrolidone, and Iv-benzyl-2-pyrrolidone.

IV、N−ジメチルホルムアミド、IV、N−ジメチル
アセトアミド、ジメチルスルホキシド、ヘキサメチルホ
スホルトリアミド、7v−アセチル−ε−カプロラクタ
ム、ジメチルイミダゾリジノンなどが例として挙げられ
る。これらは単独で用いても良いし、混合して用いるこ
とも可能である。溶剤の量は一般式CDで表わされる繰
り返し単位を、主成分とするポリマ。一般式(n)で表
わされるアミン化合物、増感剤の総和を100重量部と
した時、これに対して100重量部以上In、000重
量部以下で用いるのが望しく、さらに好しくは200重
量部以上5.rloo 重量部以下で用いるのが望しく
、この範囲を逸脱すると成膜性。
Examples include IV, N-dimethylformamide, IV, N-dimethylacetamide, dimethylsulfoxide, hexamethylphosphortriamide, 7v-acetyl-ε-caprolactam, dimethylimidazolidinone, and the like. These may be used alone or in combination. The amount of solvent is determined by the polymer whose main component is a repeating unit represented by the general formula CD. When the total of the amine compound represented by the general formula (n) and the sensitizer is 100 parts by weight, it is preferable to use 100 parts by weight or more and less than 1,000 parts by weight, more preferably 200 parts by weight or less. Parts by weight or more 5. rloo It is preferable to use parts by weight or less, and if it deviates from this range, film formability will deteriorate.

に悪影響を及ぼす。have a negative impact on

本発明による感光性重合体組成物の塗膜または加熱硬化
後のポリイミド被膜と支持基板の接−着性を向上させる
ために適宜支持基板を接着助剤で処理してもさしつかえ
ない。
In order to improve the adhesion between the coating film of the photosensitive polymer composition according to the present invention or the polyimide coating after heat curing and the supporting substrate, the supporting substrate may be appropriately treated with an adhesion promoter.

支持基板としては、金属、ガラス、半導体。Support substrates include metal, glass, and semiconductors.

金属酸化物絶縁体(例えばTiO2,Ta20g 、 
5in2など)、窒化ケイ素などが例として挙げられる
Metal oxide insulators (e.g. TiO2, Ta20g,
5in2), silicon nitride, etc.

本発明による感光性重合体組成物は通常の微細加工技術
でパターン加工が可能である。上記支持体への本重合体
組成物の塗布にはスピンナを用いた回転塗布、浸漬、噴
霧印刷などの手段が可能であり、適宜選択することがで
きる。塗布膜厚は塗布手段1本重合体組成物のワニスの
固形分濃度、粘度等によって調節可能である。
The photosensitive polymer composition according to the present invention can be patterned using conventional microfabrication techniques. The present polymer composition can be applied to the support by means such as spin coating using a spinner, dipping, and spray printing, which can be selected as appropriate. The thickness of the coating film can be adjusted by adjusting the solid content concentration, viscosity, etc. of the varnish of the polymer composition using one coating means.

示持基板上で塗膜となった本発明による感光性重合体組
成物に紫外線を照射し、次に未露元部を現像液で溶解除
去することによりレリーフ12・ ・パターンを得る。光源は紫外線に限らず可視光線、放
射線であってもさしつがえない。
A relief 12 pattern is obtained by irradiating the photosensitive polymer composition of the present invention, which has become a coating film on a display substrate, with ultraviolet rays, and then dissolving and removing the unexposed portions with a developer. The light source is not limited to ultraviolet rays, but may also be visible light or radiation.

現像液としてはA−メチル−2−ピロリドン。A-methyl-2-pyrrolidone is used as a developer.

A−アセチル−2−ピロリドン、 IV、IV−ジメチ
ルホルムアミド、 #、A’−ジメチルアセトアミド。
A-acetyl-2-pyrrolidone, IV, IV-dimethylformamide, #, A'-dimethylacetamide.

ジメチルスルホキシド、ヘキサメチルボスホルトリアミ
ド、ジメチルイミダゾリジノン、N−ベンジル−2−ピ
ロリドン、7V−アセチル−ε−カプロラクタムなどの
非プロトン性極性溶媒を単独あるいはメタノール、エタ
ノール、イソプロピルアルコール、ベンゼン、トルエン
、キシレン、メチルセロソルブなどのポリアミド酸の非
溶媒との混合液として用いることができる。
Aprotic polar solvents such as dimethyl sulfoxide, hexamethylbosphortriamide, dimethylimidazolidinone, N-benzyl-2-pyrrolidone, 7V-acetyl-ε-caprolactam alone or methanol, ethanol, isopropyl alcohol, benzene, toluene It can be used as a mixture with a polyamic acid non-solvent such as xylene, methyl cellosolve, etc.

現像によって形成したレリーフ・パターンは次いでリン
ス液によって洗浄し、現像溶媒を除。
The relief pattern formed by development is then washed with a rinse solution to remove the developing solvent.

去する。リンス液には現像液との混和性の良いポリアミ
ド酸の非溶媒を用いるが、メタノール°。
leave For the rinsing solution, a polyamic acid non-solvent with good miscibility with the developer is used, including methanol.

エタノール、イソプロピルアルコール、ベンセン、トル
エン、キシレン、メチルセロソルブなどが好適な例とし
て挙げられる。
Suitable examples include ethanol, isopropyl alcohol, benzene, toluene, xylene, and methyl cellosolve.

上記の処理によって得られたレリーフ・パターンのポリ
マはポリイミドの前駆体であり、150υから450 
tまでの範囲から選ばれた加熱温度で処理することによ
りイミド環や他の環状基を持つ耐熱性ポリマのレリーフ
・パターンとなる。
The relief pattern polymer obtained by the above treatment is a precursor of polyimide,
By processing at a heating temperature selected from a range up to t, a relief pattern of a heat-resistant polymer having imide rings or other cyclic groups is obtained.

以下1本発明を実施例によって説明する。The present invention will be explained below by way of examples.

実施例1 窒素気流下に、4.4’ジアミノシフ−ニルエーテル1
aOy (0,5モル)を、AI−メチル−2−ピロリ
ドン1791 fに浴解し、アミン溶液を調合した。次
にこの溶液を水冷によって約15′cの温度に保ちなが
ら、攪拌下にピロメリット酸二無水物+o9y (0,
5モル)を加えた。加え終えてからさらに15υで3時
間反応させて、粘度60ポアズ(30℃)のポリアミド
酸の溶液G4+を得た。
Example 1 Under nitrogen flow, 4.4'diaminosifenyl ether 1
aOy (0.5 mol) was dissolved in AI-methyl-2-pyrrolidone 1791 f to prepare an amine solution. Next, while keeping this solution at a temperature of about 15'C by water cooling, pyromellitic dianhydride + o9y (0,
5 mol) was added. After the addition was completed, the reaction was further carried out at 15υ for 3 hours to obtain a polyamic acid solution G4+ with a viscosity of 60 poise (30°C).

溶液団2Ofに、ソルビン酸2−(N、N−ジメチルア
ミン)プロピル1.9 y (o、o+モル)、ヲ溶解
し次いで1μm孔のフィルタを用いて加圧濾過した。
1.9 y (o, o+mol) of 2-(N,N-dimethylamine)propyl sorbate was dissolved in solution group 2Of, and then filtered under pressure using a filter with 1 μm pores.

得られた溶液をスピンナでシリコンウェハに回転塗布し
、次いで80υ、30分乾燥して15μm厚の塗膜を得
た。この塗膜を縞模様のソーダガラス製フォトマスクで
密着被覆し、500Fの高圧水銀灯で紫外線照射した。
The obtained solution was spin-coated onto a silicon wafer using a spinner, and then dried at 80 υ for 30 minutes to obtain a coating film with a thickness of 15 μm. This coating film was closely covered with a striped soda glass photomask and irradiated with ultraviolet light using a 500 F high pressure mercury lamp.

露光面での紫外線強度は565nmの波長域で5−雇 
であった。露光ff1. A’−メチル−2−ピロリド
ン4容、エタノール1容から成る混液で現像し1次いで
リンス液(エタノール)で洗浄してレリーフ・パターン
を得た。現像後膜厚の経時変化を測定し、現像後膜厚が
塗布膜厚の1/2になる量を感度と11 した時、感度120mJ/crlであった。感度の3倍
の照射量でシャープな端面を持つレリーフ・パターンを
得た。このパターンを400℃60分間加熱してもパタ
ーンのぼやけは見られなかった。
The intensity of ultraviolet rays on the exposed surface is 565 nm wavelength.
Met. Exposure ff1. A relief pattern was obtained by developing with a mixture of 4 volumes of A'-methyl-2-pyrrolidone and 1 volume of ethanol, and then washing with a rinse solution (ethanol). The change over time in the film thickness after development was measured, and when the sensitivity was defined as the amount by which the film thickness after development became 1/2 of the coating film thickness, the sensitivity was 120 mJ/crl. A relief pattern with sharp edges was obtained with a dose three times the sensitivity. No blurring of the pattern was observed even when this pattern was heated at 400° C. for 60 minutes.

実施例2 実施例1で得られたポリアミド酸の溶液(,41201
にソルビン酸2(N、A’−ジメチルアミン)プロピル
t9r(o、旧モル)、ミヒラーケトン051を浴解し
1次いで1μm孔のフィルタを用いて加“圧濾過した。
Example 2 Polyamic acid solution obtained in Example 1 (,41201
Then, sorbic acid 2(N,A'-dimethylamine)propyl t9r (o, old mole) and Michler's ketone 051 were dissolved in a bath and then filtered under pressure using a filter with 1 μm pores.

、15 。, 15.

得られた溶液をスピンナでシリコンウェハに回転塗布し
1次いで80 ’030分乾燥して1,5μm厚の塗膜
を得た。この塗膜を縞模様のソーダガラス製フォトマス
クで密着被覆し、500Fの高圧水銀灯で紫外線照射し
た。露光後、N−メチル−2−ピロリドン4容、エタノ
ール1容から成る混液で現像し、次いでエタノールで洗
浄してレリーフ・パターンを得た。感度はIOD*//
iであり、得られたパターンを400 kl! 、 6
0分加熱1−てもパターンのぼやけは見られなかった。
The obtained solution was spin-coated onto a silicon wafer using a spinner, and then dried for 80 minutes to obtain a coating film with a thickness of 1.5 μm. This coating film was closely covered with a striped soda glass photomask and irradiated with ultraviolet light using a 500 F high pressure mercury lamp. After exposure, it was developed with a mixture of 4 volumes of N-methyl-2-pyrrolidone and 1 volume of ethanol, and then washed with ethanol to obtain a relief pattern. Sensitivity is IOD*//
i, and the resulting pattern is 400 kl! , 6
No blurring of the pattern was observed even after heating for 0 minutes.

実施例3 実施例1.2と同様の操作でポリマ、アミン。Example 3 Polymer and amine were prepared in the same manner as in Example 1.2.

増感剤、溶剤の種類を変えて行なった。材料の調合割合
を第1表、第2表のN(L 3〜l@16に、また得ら
れた結果を第6表の階3〜Nα16に示す。
Experiments were carried out by changing the types of sensitizer and solvent. The mixing ratios of the materials are shown in Tables 1 and 2, N(L 3 to l@16), and the obtained results are shown in floors 3 to Nα16 of Table 6.

第1表、第2表のNa3 S階1(Sに示すように配合
した感光性重合体組成物をスピンナにより各種基板に塗
布し1次いで80t!で30分間加熱乾燥し塗膜とした
後、縞模様のフォトマスクを介し5品Wの高圧水銀灯で
紫外線照射し、現像、リンス゛・ 16 ・ しだ後、350Eで1時間キ、アした。第6表中。
A photosensitive polymer composition formulated as shown in Table 1 and Table 2 (S) was applied to various substrates using a spinner, and then heated and dried at 80 tons for 30 minutes to form a coating film. The film was irradiated with ultraviolet rays using a 5-W high-pressure mercury lamp through a striped photomask, developed, rinsed, and heated at 350E for 1 hour.See Table 6.

感度は塗布膜厚で現像後の膜厚を規格化した値。Sensitivity is a value that normalizes the film thickness after development by the coating film thickness.

テ05を与える照射量(365n1nで測定)で2 n
 omJ44以下のものを良好とし1以上のものを不良
と表。
2 n with a dose (measured at 365n1n) that gives TE05
omJ44 or less is considered good, and 1 or more is bad.

した。耐熱性は350 Eで1時間キーア後、300−
C1時間の加熱で減量が1%以下であってかつ形成パタ
ーンのぼやけかないものを良好とし、それ以上のものを
不良と表わした。
did. Heat resistance: 350 E for 1 hour, 300-
A case where the weight loss was 1% or less after heating for C1 hour and the formed pattern did not become blurred was considered good, and a case where the formed pattern was not blurred was judged as poor.

(曹・1−今胸2 第6表 第3表中、感度不良のものは、前記した〔I〕。(Cao・1-now chest 2 Table 6 In Table 3, those with poor sensitivity are listed in [I] above.

式で表わされるポリマに対するアミン化合物の。of an amine compound for a polymer of formula.

配合割合に起因し、詳細な発明の項既述の範囲。Due to the blending ratio, the range stated in the detailed invention section.

を逸脱したものに特に顕著に見られた。また高。This was especially noticeable in those that deviated from the above. Also high.

3〜1Bのものはすべて塗膜とした時の熱安定性。3 to 1B all have thermal stability when made into coatings.

にすぐれていた。It was excellent.

比較例1゜ 前記したげ1による方法による実験結果を以下に比較例
として示す。
Comparative Example 1 The experimental results obtained by the method according to Shige 1 above are shown below as a comparative example.

実施例1で得られたポリマ浴液(,4120fに、ジメ
チルアミンエチルメタクリレ−) 1.6 t (o、
o+モル)を溶解し、5μm孔のフィルタを用いて加圧
濾過した。
Polymer bath solution obtained in Example 1 (4120f, dimethylamine ethyl methacrylate) 1.6 t (o,
o + mol) was dissolved and filtered under pressure using a 5 μm pore filter.

得られた溶液をスピンナでシリコンウェハ上に回転塗布
し1次いで80υ、30分乾燥して18μm厚の塗膜を
得た。この塗膜を縞模様のソーダガラス製フォトマスク
で密着被覆し、500Fの高圧水銀灯で紫外線照射した
。露光後、 N、IV−ジメチルアセトアミド4容、エ
タノール1容から成る混液で、現像したが、塗膜全体が
現像溶媒・21 ・ に不溶化し、レリーフ・パターンを得るには至。
The obtained solution was spin-coated onto a silicon wafer using a spinner, and then dried at 80 υ for 30 minutes to obtain a coating film with a thickness of 18 μm. This coating film was closely covered with a striped soda glass photomask and irradiated with ultraviolet light using a 500 F high pressure mercury lamp. After exposure, it was developed with a mixture of 4 volumes of N,IV-dimethylacetamide and 1 volume of ethanol, but the entire coating film became insoluble in the developing solvent, making it impossible to obtain a relief pattern.

らなかった。There wasn't.

比較例2゜ 比較例1と同一の組成物を、70vで30分乾燥。Comparative example 2゜ The same composition as Comparative Example 1 was dried at 70V for 30 minutes.

させ以下同一の操作で紫外線照射した。露光後、現像し
1次いでエタノールで洗浄してレリーフ・パターンを得
た。感度は2.000 mJ/a1.であり。
After that, ultraviolet rays were irradiated using the same procedure. After exposure, it was developed and then washed with ethanol to obtain a relief pattern. Sensitivity is 2.000 mJ/a1. Yes.

本発明の実施例1S18のいずれの場合に比べても低感
度であった。
The sensitivity was lower than in any case of Example 1S18 of the present invention.

比較例3゜ 実施例1で得られたポリマ溶液(、(12Ofに、ジメ
チルアミンエチルシンナメート2.2 f (0,0+
m0l)を溶解し、5μm孔のフィルタを用いて加圧濾
過した。
Comparative Example 3゜To the polymer solution obtained in Example 1 (, (12Of), 2.2 f of dimethylamine ethyl cinnamate (0,0+
ml) was dissolved and filtered under pressure using a 5 μm pore filter.

得られた溶液をスピンナでシリコンウェハ上に回転塗布
し1次いで80 t+ 50分乾燥して21μm厚の塗
膜を得た。この塗膜を縞模様のソーダガラス製フォトマ
スクで密着被覆し、5oorの高圧水銀灯で紫外線照射
した。露光後、7v−メチル−2−ピロリドン4容、エ
タノール1容から22・ 成る混液で現像し、次いでエタノールで洗浄してレリー
フ・パターンを得た。感度は5.200”菊。
The obtained solution was spin-coated onto a silicon wafer using a spinner, and then dried for 80 t+ 50 minutes to obtain a coating film with a thickness of 21 μm. This coating film was tightly covered with a striped soda glass photomask and irradiated with ultraviolet rays using a 5 oor high pressure mercury lamp. After exposure, it was developed with a mixture of 4 volumes of 7v-methyl-2-pyrrolidone and 1 volume of ethanol, and then washed with ethanol to obtain a relief pattern. Sensitivity is 5.200" chrysanthemum.

であり1本発明の実施例1〜18のいずれの場合に比べ
ても低感度であった。
1 The sensitivity was lower than in any of Examples 1 to 18 of the present invention.

0 第1頁の続き ■出 願 人 日立化成工業株式会社 東京都新宿区西新宿二丁目1番 1号 156−0 Continuation of page 1 ■Applicant: Hitachi Chemical Co., Ltd. 2-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo No. 1 156-

Claims (1)

【特許請求の範囲】 +a+一般式〔1〕 (但し1式中ノイ1は3価または4価の有機基、R2゜
は2価の有機基1Mは水素、又はアンモニウム。 イオンを表わす。nは1又は2である)で表わされる繰
り返し単位を主成分とするポリマと。 +、6+一般式(n) 4 ばれた1つの基、Pは1から3までの整数、qは2から
6までの整数を表わす)で表わされるアミン化合物と。 +7?1必要に応じて加える増感剤とから成る感光性重
合体組成物。
[Claims] +a+General formula [1] (However, in formula 1, Noi1 is a trivalent or tetravalent organic group, R2゜ is a divalent organic group 1M is hydrogen or ammonium. n represents an ion. 1 or 2) as a main component. An amine compound represented by the general formula (n) 4 (P represents an integer from 1 to 3, and q represents an integer from 2 to 6). +7?1 A photosensitive polymer composition comprising a sensitizer added as necessary.
JP4277882A 1982-03-19 1982-03-19 Photopolymer composition Pending JPS58160320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4277882A JPS58160320A (en) 1982-03-19 1982-03-19 Photopolymer composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4277882A JPS58160320A (en) 1982-03-19 1982-03-19 Photopolymer composition

Publications (1)

Publication Number Publication Date
JPS58160320A true JPS58160320A (en) 1983-09-22

Family

ID=12645419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4277882A Pending JPS58160320A (en) 1982-03-19 1982-03-19 Photopolymer composition

Country Status (1)

Country Link
JP (1) JPS58160320A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103641781A (en) * 2013-12-26 2014-03-19 青岛科技大学 Application of naphthalimide type compounds and salts thereof as plant growth regulators
CN103719081A (en) * 2013-12-26 2014-04-16 青岛科技大学 Application of sorbic amide compound and salt thereof as plant growth regulator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103641781A (en) * 2013-12-26 2014-03-19 青岛科技大学 Application of naphthalimide type compounds and salts thereof as plant growth regulators
CN103719081A (en) * 2013-12-26 2014-04-16 青岛科技大学 Application of sorbic amide compound and salt thereof as plant growth regulator

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