JPS5814300U - Ion implantation type magnetic bubble element - Google Patents
Ion implantation type magnetic bubble elementInfo
- Publication number
- JPS5814300U JPS5814300U JP10776581U JP10776581U JPS5814300U JP S5814300 U JPS5814300 U JP S5814300U JP 10776581 U JP10776581 U JP 10776581U JP 10776581 U JP10776581 U JP 10776581U JP S5814300 U JPS5814300 U JP S5814300U
- Authority
- JP
- Japan
- Prior art keywords
- magnetic bubble
- bubble element
- ion implantation
- type magnetic
- implantation type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第1図は、従来のイオン打込み型磁気バブル素子におけ
るトランスファゲート部の転送路6構成図、第2図は、
本考案による磁気バブル素子における変形クローバ型転
送路を用いたトランスファゲート部の転送路の構成図、
第3図は、第1図のクローバ型転送路の拡大図、第4図
は第2図の変形クローバ型転送路の拡大図である。
1・・・メージャライン、2・・・クローバ型転送路、
3・・・マイナーループ群、4・・・磁気バブル、5・
・・凹部、6,13・・・葉部、7・・・変形クローバ
型転送路、8・・・凸部、9・・・転送方向、10.1
1・・・距離、14・・・接続部、15・・・チャージ
ドウオール。FIG. 1 is a configuration diagram of a transfer path 6 of a transfer gate section in a conventional ion implantation type magnetic bubble element, and FIG.
A configuration diagram of a transfer path of a transfer gate section using a modified cloverleaf type transfer path in a magnetic bubble element according to the present invention,
3 is an enlarged view of the cloverleaf type transfer path shown in FIG. 1, and FIG. 4 is an enlarged view of the modified cloverleaf type transfer path shown in FIG. 2. 1... Major line, 2... Clover type transfer path,
3... Minor loop group, 4... Magnetic bubble, 5...
... Concave portion, 6, 13... Leaf portion, 7... Modified clover-shaped transfer path, 8... Convex portion, 9... Transfer direction, 10.1
1...Distance, 14...Connection part, 15...Charged wall.
Claims (1)
けられたメージャラインとからなるイオン打込み型磁気
バブル素子において、上記メージャラインを構成する三
葉のクローバ型転送路が、上記マイナーループに近いク
ローバの一葉部の中、心が他の二つの葉部の中心を結ぶ
線分の垂直二等分線上にないような変形した三葉のクロ
ーバから構成されていることを特徴としたイオン打込み
型磁気バブル素子。In an ion implantation type magnetic bubble element consisting of a plurality of minor loops and a major line provided at one end of the minor loop, the three-lobed cloverleaf transfer path constituting the major line is one of the cloverleafs near the minor loop. An ion-implanted magnetic bubble element characterized in that it is constructed from a deformed three-lobed clover whose center is not on the perpendicular bisector of a line connecting the centers of two other leaf sections. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10776581U JPS5814300U (en) | 1981-07-22 | 1981-07-22 | Ion implantation type magnetic bubble element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10776581U JPS5814300U (en) | 1981-07-22 | 1981-07-22 | Ion implantation type magnetic bubble element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5814300U true JPS5814300U (en) | 1983-01-28 |
Family
ID=29902193
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10776581U Pending JPS5814300U (en) | 1981-07-22 | 1981-07-22 | Ion implantation type magnetic bubble element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5814300U (en) |
-
1981
- 1981-07-22 JP JP10776581U patent/JPS5814300U/en active Pending
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