JPS5790978A - Field effect type transistor - Google Patents

Field effect type transistor

Info

Publication number
JPS5790978A
JPS5790978A JP16630080A JP16630080A JPS5790978A JP S5790978 A JPS5790978 A JP S5790978A JP 16630080 A JP16630080 A JP 16630080A JP 16630080 A JP16630080 A JP 16630080A JP S5790978 A JPS5790978 A JP S5790978A
Authority
JP
Japan
Prior art keywords
layer
electrode
pad
insulating
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16630080A
Other languages
Japanese (ja)
Inventor
Hirobumi Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP16630080A priority Critical patent/JPS5790978A/en
Publication of JPS5790978A publication Critical patent/JPS5790978A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To reduce a gate leakage current in a GaAs FET and to achieve its high quality and high reliability by a method wherein a bonding pad section connecting with an electrode which contacts an active layer is formed on a semi- insulating substrate via an insulating layer. CONSTITUTION:A buffer layer 21 and an active layer 22 are formed in mesa shape on a semi-insulating GaAs substrate 20, and an Al gate electrode 23 and source and drain electrodes 24 and 25 made of AuGe alloy and Ni are built. Next, a CVD oxide layer 26 is coated on the whole surface, and an opening with the area smaller than a superposed part is built on the oxide film 26 in a joint with the pad metal of each electrode. Subsequently, after forming a Ti layer 27 and a Pt layer 28 on the pad part of the gate electrode by means of a lift-off method, an Au layer 29 is again formed on the pad part of each electrode applying lift-off method. With this structure, flowing of a leakage current to a buffer layer 21 via a pad electrode 30 can be prevented, especially decreasing an initial value of gate leakage and a change after high temperature storage.
JP16630080A 1980-11-26 1980-11-26 Field effect type transistor Pending JPS5790978A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16630080A JPS5790978A (en) 1980-11-26 1980-11-26 Field effect type transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16630080A JPS5790978A (en) 1980-11-26 1980-11-26 Field effect type transistor

Publications (1)

Publication Number Publication Date
JPS5790978A true JPS5790978A (en) 1982-06-05

Family

ID=15828784

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16630080A Pending JPS5790978A (en) 1980-11-26 1980-11-26 Field effect type transistor

Country Status (1)

Country Link
JP (1) JPS5790978A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59224180A (en) * 1983-06-03 1984-12-17 Nec Corp Semiconductor device
JPH02103964A (en) * 1988-10-13 1990-04-17 Mitsubishi Electric Corp Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4950874A (en) * 1972-09-19 1974-05-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4950874A (en) * 1972-09-19 1974-05-17

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59224180A (en) * 1983-06-03 1984-12-17 Nec Corp Semiconductor device
JPH02103964A (en) * 1988-10-13 1990-04-17 Mitsubishi Electric Corp Semiconductor device

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