JPS5771188A - Amorphous solar cell - Google Patents

Amorphous solar cell

Info

Publication number
JPS5771188A
JPS5771188A JP55147846A JP14784680A JPS5771188A JP S5771188 A JPS5771188 A JP S5771188A JP 55147846 A JP55147846 A JP 55147846A JP 14784680 A JP14784680 A JP 14784680A JP S5771188 A JPS5771188 A JP S5771188A
Authority
JP
Japan
Prior art keywords
layer
type
accumulated
amorphous
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55147846A
Other languages
Japanese (ja)
Inventor
Yukio Higaki
Yoshinori Yukimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55147846A priority Critical patent/JPS5771188A/en
Publication of JPS5771188A publication Critical patent/JPS5771188A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:T obtain P-i-N type cell, of small electric resistance, by constituting most of poly-crystal and a part of amorphous layer in a P type layer, as for a solar cell which consists of a P type semiconductor layer and an i type amorphous semiconductor layer, accumulated subsequently on a substrate, and an N type amorphous semiconductor layer. CONSTITUTION:An N type layer 2 and an i type layer 3, composed of amorphous layer, and a P type layer 4 are accumulated on a metal substrate 1 of stainless steel or the like. A P type polycrystalline layer 5 is accumulated thereon. A transparent electrode 6 of In-Sn composite is accumulated thereon. An Al metal electrode 7 is attached to an end thereon. In this constitution, the layers 2-4 are formed subsequently by glow discharge or the like. THe layer 5 is formed temporarily as a P type amosphous layer, and mostly converted into poly-crystal, while partly remaining as unification with the P type amorphous layer 4, by applying a laser beam. This allows poly-crystallization so as to decrease the electric resistace as well as reduce absorption coefficient, thereby to make it possible to increase the thickness correspondingly and further lowes the resistance.
JP55147846A 1980-10-21 1980-10-21 Amorphous solar cell Pending JPS5771188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55147846A JPS5771188A (en) 1980-10-21 1980-10-21 Amorphous solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55147846A JPS5771188A (en) 1980-10-21 1980-10-21 Amorphous solar cell

Publications (1)

Publication Number Publication Date
JPS5771188A true JPS5771188A (en) 1982-05-01

Family

ID=15439571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55147846A Pending JPS5771188A (en) 1980-10-21 1980-10-21 Amorphous solar cell

Country Status (1)

Country Link
JP (1) JPS5771188A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066870A (en) * 1983-09-24 1985-04-17 Tokio Nakada Manufacture of selenium photo battery
JPS60224281A (en) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd Semiconductor device
US4578696A (en) * 1982-11-25 1986-03-25 Director-General Of Agency Of Industrial Science And Technology Thin film semiconductor device
FR2598033A1 (en) * 1984-10-29 1987-10-30 Mitsubishi Electric Corp AMORPHOUS SOLAR CELL
WO2011022687A3 (en) * 2009-08-20 2011-07-21 Sionyx, Inc. Laser processed heterojunction photovoltaic devices and associated methods
JP2012525006A (en) * 2009-04-21 2012-10-18 テトラサン インコーポレイテッド High efficiency solar cell structure and manufacturing method
US9666636B2 (en) 2011-06-09 2017-05-30 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673250B2 (en) 2013-06-29 2017-06-06 Sionyx, Llc Shallow trench textured regions and associated methods
US9741761B2 (en) 2010-04-21 2017-08-22 Sionyx, Llc Photosensitive imaging devices and associated methods
US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
US9761739B2 (en) 2010-06-18 2017-09-12 Sionyx, Llc High speed photosensitive devices and associated methods
US9905599B2 (en) 2012-03-22 2018-02-27 Sionyx, Llc Pixel isolation elements, devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US10244188B2 (en) 2011-07-13 2019-03-26 Sionyx, Llc Biometric imaging devices and associated methods
US10361083B2 (en) 2004-09-24 2019-07-23 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10374109B2 (en) 2001-05-25 2019-08-06 President And Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4578696A (en) * 1982-11-25 1986-03-25 Director-General Of Agency Of Industrial Science And Technology Thin film semiconductor device
JPS6066870A (en) * 1983-09-24 1985-04-17 Tokio Nakada Manufacture of selenium photo battery
JPS60224281A (en) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd Semiconductor device
FR2598033A1 (en) * 1984-10-29 1987-10-30 Mitsubishi Electric Corp AMORPHOUS SOLAR CELL
US4737196A (en) * 1984-10-29 1988-04-12 Mitsubishi Denki Kabushiki Kaisha Amorphous solar cell
US10374109B2 (en) 2001-05-25 2019-08-06 President And Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US10741399B2 (en) 2004-09-24 2020-08-11 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10361083B2 (en) 2004-09-24 2019-07-23 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
JP2014207475A (en) * 2009-04-21 2014-10-30 テトラサン インコーポレイテッド High-efficiency solar cell structure and manufacturing method
JP2016026409A (en) * 2009-04-21 2016-02-12 テトラサン インコーポレイテッド High-efficiency solar cell structure and manufacturing method
US9666732B2 (en) 2009-04-21 2017-05-30 Tetrasun, Inc. High-efficiency solar cell structures and methods of manufacture
JP2012525006A (en) * 2009-04-21 2012-10-18 テトラサン インコーポレイテッド High efficiency solar cell structure and manufacturing method
WO2011022687A3 (en) * 2009-08-20 2011-07-21 Sionyx, Inc. Laser processed heterojunction photovoltaic devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US10361232B2 (en) 2009-09-17 2019-07-23 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9741761B2 (en) 2010-04-21 2017-08-22 Sionyx, Llc Photosensitive imaging devices and associated methods
US10229951B2 (en) 2010-04-21 2019-03-12 Sionyx, Llc Photosensitive imaging devices and associated methods
US9761739B2 (en) 2010-06-18 2017-09-12 Sionyx, Llc High speed photosensitive devices and associated methods
US10505054B2 (en) 2010-06-18 2019-12-10 Sionyx, Llc High speed photosensitive devices and associated methods
US10269861B2 (en) 2011-06-09 2019-04-23 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US9666636B2 (en) 2011-06-09 2017-05-30 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US10244188B2 (en) 2011-07-13 2019-03-26 Sionyx, Llc Biometric imaging devices and associated methods
US10224359B2 (en) 2012-03-22 2019-03-05 Sionyx, Llc Pixel isolation elements, devices and associated methods
US9905599B2 (en) 2012-03-22 2018-02-27 Sionyx, Llc Pixel isolation elements, devices and associated methods
US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US10347682B2 (en) 2013-06-29 2019-07-09 Sionyx, Llc Shallow trench textured regions and associated methods
US9673250B2 (en) 2013-06-29 2017-06-06 Sionyx, Llc Shallow trench textured regions and associated methods
US11069737B2 (en) 2013-06-29 2021-07-20 Sionyx, Llc Shallow trench textured regions and associated methods

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