JPS5764950A - Electrostatically attracting device and method therefor - Google Patents

Electrostatically attracting device and method therefor

Info

Publication number
JPS5764950A
JPS5764950A JP14104680A JP14104680A JPS5764950A JP S5764950 A JPS5764950 A JP S5764950A JP 14104680 A JP14104680 A JP 14104680A JP 14104680 A JP14104680 A JP 14104680A JP S5764950 A JPS5764950 A JP S5764950A
Authority
JP
Japan
Prior art keywords
electrodes
attracted
insulator
capacity
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14104680A
Other languages
Japanese (ja)
Other versions
JPH0152899B2 (en
Inventor
Naomichi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14104680A priority Critical patent/JPS5764950A/en
Priority to US06/304,902 priority patent/US4384918A/en
Priority to EP81304409A priority patent/EP0049588B1/en
Priority to DE8181304409T priority patent/DE3171924D1/en
Priority to IE2268/81A priority patent/IE52318B1/en
Publication of JPS5764950A publication Critical patent/JPS5764950A/en
Publication of JPH0152899B2 publication Critical patent/JPH0152899B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

PURPOSE:To obtain an electrostatically attracting device having a strong attracting force by employing a planar electrode and increasing the ratio of the area of the eletrode to the area of the device. CONSTITUTION:When a voltage of approx. 1,000-5,000V is applied between a pair of planar electrodes 4 and 5, a member 3 to be attracted can be attracted. The electrodes 4, 5 are made of aluminum or the like, and an insulator 2 has a thickness (d) of approx. 50-200mum of polyethylene or the like. The member 3 is a conductor and forms a capacity between the electrodes 4 and 5, and the capacity is connected in series. When a voltage is applied to the capacity, electrostatically attracting force is produced and is proportional to the dielectric constant of the insulator 2 and the area of the electrodes 4, 5 as well as to the square of the applied voltage but is inversely proportional to the thickness of the insulator 2. According to this configuration, both the conductive material, e.g., a semiconductor wafer and a conductive member covered with a thin insulating film can be attracted, and the device having strong attracting force can be obtained with a simple construction.
JP14104680A 1980-09-30 1980-10-08 Electrostatically attracting device and method therefor Granted JPS5764950A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14104680A JPS5764950A (en) 1980-10-08 1980-10-08 Electrostatically attracting device and method therefor
US06/304,902 US4384918A (en) 1980-09-30 1981-09-23 Method and apparatus for dry etching and electrostatic chucking device used therein
EP81304409A EP0049588B1 (en) 1980-09-30 1981-09-24 Method and apparatus for dry etching and electrostatic chucking device used therein
DE8181304409T DE3171924D1 (en) 1980-09-30 1981-09-24 Method and apparatus for dry etching and electrostatic chucking device used therein
IE2268/81A IE52318B1 (en) 1980-09-30 1981-09-29 Method and apparatus for dry etching and electrostatic chucking device used therein

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14104680A JPS5764950A (en) 1980-10-08 1980-10-08 Electrostatically attracting device and method therefor

Publications (2)

Publication Number Publication Date
JPS5764950A true JPS5764950A (en) 1982-04-20
JPH0152899B2 JPH0152899B2 (en) 1989-11-10

Family

ID=15282984

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14104680A Granted JPS5764950A (en) 1980-09-30 1980-10-08 Electrostatically attracting device and method therefor

Country Status (1)

Country Link
JP (1) JPS5764950A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848434A (en) * 1981-09-17 1983-03-22 Toshiba Corp Electrostatic chuck device
JPS5979524A (en) * 1982-10-29 1984-05-08 Toshiba Corp Electrostatic chuck cassette for sample holding
JPH01274938A (en) * 1988-04-26 1989-11-02 Toto Ltd Electrostatic chuck base plate
JPH03104529A (en) * 1989-09-19 1991-05-01 Fujitsu Ltd Electrostatic chuck
JPH06120329A (en) * 1992-08-20 1994-04-28 Fujitsu Ltd Electrostatic attractor for wafer, electrostatic attraction method for wafer, and breakup method for wafer, and dry etching method
US5539179A (en) * 1990-11-17 1996-07-23 Tokyo Electron Limited Electrostatic chuck having a multilayer structure for attracting an object
JP2006049357A (en) * 2004-07-30 2006-02-16 Toto Ltd Electrostatic chuck and equipment mounting it
US9384946B2 (en) 2012-01-12 2016-07-05 Hitachi High-Technologies Corporation Plasma processing apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001297971A (en) * 2000-04-14 2001-10-26 Ulvac Japan Ltd Aligner
JP4640876B2 (en) * 2000-06-13 2011-03-02 株式会社アルバック Substrate transfer device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848434A (en) * 1981-09-17 1983-03-22 Toshiba Corp Electrostatic chuck device
JPS5979524A (en) * 1982-10-29 1984-05-08 Toshiba Corp Electrostatic chuck cassette for sample holding
JPH01274938A (en) * 1988-04-26 1989-11-02 Toto Ltd Electrostatic chuck base plate
JPH03104529A (en) * 1989-09-19 1991-05-01 Fujitsu Ltd Electrostatic chuck
US5539179A (en) * 1990-11-17 1996-07-23 Tokyo Electron Limited Electrostatic chuck having a multilayer structure for attracting an object
JPH06120329A (en) * 1992-08-20 1994-04-28 Fujitsu Ltd Electrostatic attractor for wafer, electrostatic attraction method for wafer, and breakup method for wafer, and dry etching method
JP2006049357A (en) * 2004-07-30 2006-02-16 Toto Ltd Electrostatic chuck and equipment mounting it
US9384946B2 (en) 2012-01-12 2016-07-05 Hitachi High-Technologies Corporation Plasma processing apparatus

Also Published As

Publication number Publication date
JPH0152899B2 (en) 1989-11-10

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