JPS5764950A - Electrostatically attracting device and method therefor - Google Patents
Electrostatically attracting device and method thereforInfo
- Publication number
- JPS5764950A JPS5764950A JP14104680A JP14104680A JPS5764950A JP S5764950 A JPS5764950 A JP S5764950A JP 14104680 A JP14104680 A JP 14104680A JP 14104680 A JP14104680 A JP 14104680A JP S5764950 A JPS5764950 A JP S5764950A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- attracted
- insulator
- capacity
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Jigs For Machine Tools (AREA)
Abstract
PURPOSE:To obtain an electrostatically attracting device having a strong attracting force by employing a planar electrode and increasing the ratio of the area of the eletrode to the area of the device. CONSTITUTION:When a voltage of approx. 1,000-5,000V is applied between a pair of planar electrodes 4 and 5, a member 3 to be attracted can be attracted. The electrodes 4, 5 are made of aluminum or the like, and an insulator 2 has a thickness (d) of approx. 50-200mum of polyethylene or the like. The member 3 is a conductor and forms a capacity between the electrodes 4 and 5, and the capacity is connected in series. When a voltage is applied to the capacity, electrostatically attracting force is produced and is proportional to the dielectric constant of the insulator 2 and the area of the electrodes 4, 5 as well as to the square of the applied voltage but is inversely proportional to the thickness of the insulator 2. According to this configuration, both the conductive material, e.g., a semiconductor wafer and a conductive member covered with a thin insulating film can be attracted, and the device having strong attracting force can be obtained with a simple construction.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14104680A JPS5764950A (en) | 1980-10-08 | 1980-10-08 | Electrostatically attracting device and method therefor |
US06/304,902 US4384918A (en) | 1980-09-30 | 1981-09-23 | Method and apparatus for dry etching and electrostatic chucking device used therein |
EP81304409A EP0049588B1 (en) | 1980-09-30 | 1981-09-24 | Method and apparatus for dry etching and electrostatic chucking device used therein |
DE8181304409T DE3171924D1 (en) | 1980-09-30 | 1981-09-24 | Method and apparatus for dry etching and electrostatic chucking device used therein |
IE2268/81A IE52318B1 (en) | 1980-09-30 | 1981-09-29 | Method and apparatus for dry etching and electrostatic chucking device used therein |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14104680A JPS5764950A (en) | 1980-10-08 | 1980-10-08 | Electrostatically attracting device and method therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5764950A true JPS5764950A (en) | 1982-04-20 |
JPH0152899B2 JPH0152899B2 (en) | 1989-11-10 |
Family
ID=15282984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14104680A Granted JPS5764950A (en) | 1980-09-30 | 1980-10-08 | Electrostatically attracting device and method therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5764950A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5848434A (en) * | 1981-09-17 | 1983-03-22 | Toshiba Corp | Electrostatic chuck device |
JPS5979524A (en) * | 1982-10-29 | 1984-05-08 | Toshiba Corp | Electrostatic chuck cassette for sample holding |
JPH01274938A (en) * | 1988-04-26 | 1989-11-02 | Toto Ltd | Electrostatic chuck base plate |
JPH03104529A (en) * | 1989-09-19 | 1991-05-01 | Fujitsu Ltd | Electrostatic chuck |
JPH06120329A (en) * | 1992-08-20 | 1994-04-28 | Fujitsu Ltd | Electrostatic attractor for wafer, electrostatic attraction method for wafer, and breakup method for wafer, and dry etching method |
US5539179A (en) * | 1990-11-17 | 1996-07-23 | Tokyo Electron Limited | Electrostatic chuck having a multilayer structure for attracting an object |
JP2006049357A (en) * | 2004-07-30 | 2006-02-16 | Toto Ltd | Electrostatic chuck and equipment mounting it |
US9384946B2 (en) | 2012-01-12 | 2016-07-05 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001297971A (en) * | 2000-04-14 | 2001-10-26 | Ulvac Japan Ltd | Aligner |
JP4640876B2 (en) * | 2000-06-13 | 2011-03-02 | 株式会社アルバック | Substrate transfer device |
-
1980
- 1980-10-08 JP JP14104680A patent/JPS5764950A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5848434A (en) * | 1981-09-17 | 1983-03-22 | Toshiba Corp | Electrostatic chuck device |
JPS5979524A (en) * | 1982-10-29 | 1984-05-08 | Toshiba Corp | Electrostatic chuck cassette for sample holding |
JPH01274938A (en) * | 1988-04-26 | 1989-11-02 | Toto Ltd | Electrostatic chuck base plate |
JPH03104529A (en) * | 1989-09-19 | 1991-05-01 | Fujitsu Ltd | Electrostatic chuck |
US5539179A (en) * | 1990-11-17 | 1996-07-23 | Tokyo Electron Limited | Electrostatic chuck having a multilayer structure for attracting an object |
JPH06120329A (en) * | 1992-08-20 | 1994-04-28 | Fujitsu Ltd | Electrostatic attractor for wafer, electrostatic attraction method for wafer, and breakup method for wafer, and dry etching method |
JP2006049357A (en) * | 2004-07-30 | 2006-02-16 | Toto Ltd | Electrostatic chuck and equipment mounting it |
US9384946B2 (en) | 2012-01-12 | 2016-07-05 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
JPH0152899B2 (en) | 1989-11-10 |
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