JPS5762052A - Original plate to be projected for use in transmission - Google Patents

Original plate to be projected for use in transmission

Info

Publication number
JPS5762052A
JPS5762052A JP13648380A JP13648380A JPS5762052A JP S5762052 A JPS5762052 A JP S5762052A JP 13648380 A JP13648380 A JP 13648380A JP 13648380 A JP13648380 A JP 13648380A JP S5762052 A JPS5762052 A JP S5762052A
Authority
JP
Japan
Prior art keywords
plate
original plate
projected
original
transmission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13648380A
Other languages
Japanese (ja)
Other versions
JPS6250811B2 (en
Inventor
Masato Shibuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Nippon Kogaku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp, Nippon Kogaku KK filed Critical Nikon Corp
Priority to JP13648380A priority Critical patent/JPS5762052A/en
Publication of JPS5762052A publication Critical patent/JPS5762052A/en
Publication of JPS6250811B2 publication Critical patent/JPS6250811B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To from an original plate high in resolution, limit, while the light of the same wavelength and the same projection lenses as those of the conventional method are used, by providing a specified phase-regulating member in the transparent part of the original plate. CONSTITUTION:A lambda/2 plate 3 (lambda is the wavelength of an incident coherent light) is arranged in a part of the transparent part 1 (at least one of both the sides of the part 1) which composes an original grating plate (the original plate to be projected for use in transmission illumination) together with the opaque part 2. The desired plate is thus formed.
JP13648380A 1980-09-30 1980-09-30 Original plate to be projected for use in transmission Granted JPS5762052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13648380A JPS5762052A (en) 1980-09-30 1980-09-30 Original plate to be projected for use in transmission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13648380A JPS5762052A (en) 1980-09-30 1980-09-30 Original plate to be projected for use in transmission

Publications (2)

Publication Number Publication Date
JPS5762052A true JPS5762052A (en) 1982-04-14
JPS6250811B2 JPS6250811B2 (en) 1987-10-27

Family

ID=15176191

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13648380A Granted JPS5762052A (en) 1980-09-30 1980-09-30 Original plate to be projected for use in transmission

Country Status (1)

Country Link
JP (1) JPS5762052A (en)

Cited By (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58173744A (en) * 1982-04-05 1983-10-12 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Mask
JPH03119355A (en) * 1989-10-02 1991-05-21 Hitachi Ltd Mask and production thereof
US5235400A (en) * 1988-10-12 1993-08-10 Hitachi, Ltd. Method of and apparatus for detecting defect on photomask
US5272116A (en) * 1991-11-18 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Method for pattern defect correction of a photomask
US5290647A (en) * 1989-12-01 1994-03-01 Mitsubishi Denki Kabushiki Kaisha Photomask and method of manufacturing a photomask
US5322748A (en) * 1991-09-05 1994-06-21 Mitsubishi Denki Kabushiki Kaisha Photomask and a method of manufacturing thereof comprising trapezoidal shaped light blockers covered by a transparent layer
US5356738A (en) * 1990-12-28 1994-10-18 Nippon Steel Corporation Reticle comprising phase shifter with a tapered edge
US5358807A (en) * 1988-11-22 1994-10-25 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5414746A (en) * 1991-04-22 1995-05-09 Nippon Telegraph & Telephone X-ray exposure mask and fabrication method thereof
US5426503A (en) * 1993-10-12 1995-06-20 Mitsubishi Denki Kabushiki Kaisha Method of testing a phase shift mask and a testing apparatus used therein in the ultraviolet wavelength range
US5429897A (en) * 1993-02-12 1995-07-04 Mitsubishi Denki Kabushiki Kaisha Attenuating type phase shifting mask and method of manufacturing thereof
US5455144A (en) * 1990-03-20 1995-10-03 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US5464713A (en) * 1993-09-24 1995-11-07 Mitsubishi Denki Kabushiki Kaisha Phase shift mask and method for repairing a defect of a phase shift mask
US5474864A (en) * 1992-11-21 1995-12-12 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
US5482799A (en) * 1993-10-08 1996-01-09 Mitsubishi Denki Kabushiki Kaisha Phase shift mask and manufacturing method thereof
US5574492A (en) * 1992-03-27 1996-11-12 Canon Kabushiki Kaisha Imaging method and semiconductor device manufacturing method using the same
US5587834A (en) * 1992-01-31 1996-12-24 Canon Kabushiki Kaisha Semiconductor device manufacturing method and projection exposure apparatus using the same
US5594587A (en) * 1994-03-11 1997-01-14 Nikon Corporation Illumination device with allowable error amount of telecentricity on the surface of the object to be illuminated and exposure apparatus using the same
US5593801A (en) * 1993-02-12 1997-01-14 Mitsubishi Denki Kabushiki Kaisha Attenuating type phase shifting mask, method of manufacturing thereof and semiconductor device manufactured by using the mask
US5608575A (en) * 1991-08-02 1997-03-04 Canon Kabushiki Kaisha Image projection method and semiconductor device manufacturing method using the same
US5644381A (en) * 1994-07-11 1997-07-01 Mitsubishi Denki Kabushiki Kaisha Method of exposure employing phase shift mask of attenuation type
US5674647A (en) * 1992-11-21 1997-10-07 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
US5700601A (en) * 1994-06-29 1997-12-23 Hitachi, Ltd. Photomask, manufacture of photomask, formation of pattern, manufacture of semiconductor device, and mask pattern design system
US5715089A (en) * 1991-09-06 1998-02-03 Nikon Corporation Exposure method and apparatus therefor
US5717483A (en) * 1993-12-27 1998-02-10 Nikon Corporation Illumination optical apparatus and method and exposure apparatus using the illumination optical apparatus and method
US5739898A (en) * 1993-02-03 1998-04-14 Nikon Corporation Exposure method and apparatus
US5935738A (en) * 1997-02-20 1999-08-10 Nec Corporation Phase-shifting mask, exposure method and method for measuring amount of spherical aberration
US6004699A (en) * 1997-02-28 1999-12-21 Nec Corporation Photomask used for projection exposure with phase shifted auxiliary pattern
US6048647A (en) * 1994-04-05 2000-04-11 Mitsubishi Denki Kabushiki Kaisha Phase shift mask of attenuation type and manufacturing method thereof
US6734506B2 (en) 2001-10-11 2004-05-11 Kabushiki Kaisha Toshiba Semiconductor device including a plurality of kinds of MOS transistors having different gate widths and method of manufacturing the same
US6737198B2 (en) 1999-01-13 2004-05-18 Renesas Technology Corp. Photomask, fabrication method of photomask, and fabrication method of semiconductor integrated circuit
JP2006259381A (en) * 2005-03-17 2006-09-28 Nec Electronics Corp Method for forming pattern, method for manufacturing semiconductor device, phase shift mask, and method for designing phase shift mask
JP2006269853A (en) * 2005-03-25 2006-10-05 Sony Corp Exposure apparatus and method of exposure

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5935735A (en) 1996-10-24 1999-08-10 Toppan Printing Co., Ltd. Halftone phase shift mask, blank for the same, and methods of manufacturing these
JP4622504B2 (en) * 2004-12-21 2011-02-02 凸版印刷株式会社 Mask blank for extreme ultraviolet exposure, mask and pattern transfer method
KR101771380B1 (en) 2008-05-09 2017-08-24 호야 가부시키가이샤 Reflective mask, reflective mask blank and method for manufacturing reflective mask

Cited By (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6259296B2 (en) * 1982-04-05 1987-12-10 Intaanashonaru Bijinesu Mashiinzu Corp
JPS58173744A (en) * 1982-04-05 1983-10-12 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Mask
US5235400A (en) * 1988-10-12 1993-08-10 Hitachi, Ltd. Method of and apparatus for detecting defect on photomask
US5948574A (en) * 1988-11-22 1999-09-07 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6106981A (en) * 1988-11-22 2000-08-22 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6548213B2 (en) 1988-11-22 2003-04-15 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5830606A (en) * 1988-11-22 1998-11-03 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6458497B2 (en) 1988-11-22 2002-10-01 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5358807A (en) * 1988-11-22 1994-10-25 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US6733933B2 (en) 1988-11-22 2004-05-11 Renesas Technology Corporation Mask for manufacturing semiconductor device and method of manufacture thereof
US7008736B2 (en) 1988-11-22 2006-03-07 Renesas Technology Corp. Semiconductor integrated circuit device fabrication method using a mask having a phase shifting film covering region and an opening region
US6420075B1 (en) 1988-11-22 2002-07-16 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
US5484671A (en) * 1988-11-22 1996-01-16 Hitachi, Ltd. Mask for manufacturing semiconductor device and method of manufacture thereof
JPH03119355A (en) * 1989-10-02 1991-05-21 Hitachi Ltd Mask and production thereof
US5290647A (en) * 1989-12-01 1994-03-01 Mitsubishi Denki Kabushiki Kaisha Photomask and method of manufacturing a photomask
US6794118B2 (en) 1990-03-20 2004-09-21 Renesas Technology Corp. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US5455144A (en) * 1990-03-20 1995-10-03 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US5753416A (en) * 1990-03-20 1998-05-19 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US6309800B1 (en) 1990-03-20 2001-10-30 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US6153357A (en) * 1990-03-20 2000-11-28 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US5667941A (en) * 1990-03-20 1997-09-16 Hitachi, Ltd. Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process
US5356738A (en) * 1990-12-28 1994-10-18 Nippon Steel Corporation Reticle comprising phase shifter with a tapered edge
US5414746A (en) * 1991-04-22 1995-05-09 Nippon Telegraph & Telephone X-ray exposure mask and fabrication method thereof
US5608575A (en) * 1991-08-02 1997-03-04 Canon Kabushiki Kaisha Image projection method and semiconductor device manufacturing method using the same
US5322748A (en) * 1991-09-05 1994-06-21 Mitsubishi Denki Kabushiki Kaisha Photomask and a method of manufacturing thereof comprising trapezoidal shaped light blockers covered by a transparent layer
US6094305A (en) * 1991-09-06 2000-07-25 Nikon Corporation Exposure method and apparatus therefor
US5715089A (en) * 1991-09-06 1998-02-03 Nikon Corporation Exposure method and apparatus therefor
US5272116A (en) * 1991-11-18 1993-12-21 Mitsubishi Denki Kabushiki Kaisha Method for pattern defect correction of a photomask
US5587834A (en) * 1992-01-31 1996-12-24 Canon Kabushiki Kaisha Semiconductor device manufacturing method and projection exposure apparatus using the same
US5574492A (en) * 1992-03-27 1996-11-12 Canon Kabushiki Kaisha Imaging method and semiconductor device manufacturing method using the same
US5691090A (en) * 1992-11-21 1997-11-25 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
US5830607A (en) * 1992-11-21 1998-11-03 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
US5474864A (en) * 1992-11-21 1995-12-12 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
US5629114A (en) * 1992-11-21 1997-05-13 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask comprising a semitransparent region
US5674647A (en) * 1992-11-21 1997-10-07 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
US5739898A (en) * 1993-02-03 1998-04-14 Nikon Corporation Exposure method and apparatus
US5429897A (en) * 1993-02-12 1995-07-04 Mitsubishi Denki Kabushiki Kaisha Attenuating type phase shifting mask and method of manufacturing thereof
US5593801A (en) * 1993-02-12 1997-01-14 Mitsubishi Denki Kabushiki Kaisha Attenuating type phase shifting mask, method of manufacturing thereof and semiconductor device manufactured by using the mask
US5464713A (en) * 1993-09-24 1995-11-07 Mitsubishi Denki Kabushiki Kaisha Phase shift mask and method for repairing a defect of a phase shift mask
US5482799A (en) * 1993-10-08 1996-01-09 Mitsubishi Denki Kabushiki Kaisha Phase shift mask and manufacturing method thereof
US5426503A (en) * 1993-10-12 1995-06-20 Mitsubishi Denki Kabushiki Kaisha Method of testing a phase shift mask and a testing apparatus used therein in the ultraviolet wavelength range
US5717483A (en) * 1993-12-27 1998-02-10 Nikon Corporation Illumination optical apparatus and method and exposure apparatus using the illumination optical apparatus and method
US5594587A (en) * 1994-03-11 1997-01-14 Nikon Corporation Illumination device with allowable error amount of telecentricity on the surface of the object to be illuminated and exposure apparatus using the same
US6048647A (en) * 1994-04-05 2000-04-11 Mitsubishi Denki Kabushiki Kaisha Phase shift mask of attenuation type and manufacturing method thereof
US5895741A (en) * 1994-06-29 1999-04-20 Hitachi, Ltd. Photomask, manufacture of photomask, formation of pattern, manufacture of semiconductor device, and mask pattern design system
US5700601A (en) * 1994-06-29 1997-12-23 Hitachi, Ltd. Photomask, manufacture of photomask, formation of pattern, manufacture of semiconductor device, and mask pattern design system
US5644381A (en) * 1994-07-11 1997-07-01 Mitsubishi Denki Kabushiki Kaisha Method of exposure employing phase shift mask of attenuation type
US5935738A (en) * 1997-02-20 1999-08-10 Nec Corporation Phase-shifting mask, exposure method and method for measuring amount of spherical aberration
US6004699A (en) * 1997-02-28 1999-12-21 Nec Corporation Photomask used for projection exposure with phase shifted auxiliary pattern
US6737198B2 (en) 1999-01-13 2004-05-18 Renesas Technology Corp. Photomask, fabrication method of photomask, and fabrication method of semiconductor integrated circuit
US6815280B2 (en) 2001-10-11 2004-11-09 Kabushiki Kaisha Toshiba Method of manufacturing a semiconductor device including a plurality of kinds of MOS transistors having different gate widths
US6734506B2 (en) 2001-10-11 2004-05-11 Kabushiki Kaisha Toshiba Semiconductor device including a plurality of kinds of MOS transistors having different gate widths and method of manufacturing the same
JP2006259381A (en) * 2005-03-17 2006-09-28 Nec Electronics Corp Method for forming pattern, method for manufacturing semiconductor device, phase shift mask, and method for designing phase shift mask
US7776514B2 (en) 2005-03-17 2010-08-17 Nec Electronics Corporation Pattern forming method, semiconductor device manufacturing method and phase shift photomask having dummy gate patterns
JP4598575B2 (en) * 2005-03-17 2010-12-15 ルネサスエレクトロニクス株式会社 Pattern formation method, semiconductor device manufacturing method, phase shift mask, and phase shift mask design method
US8192919B2 (en) 2005-03-17 2012-06-05 Renesas Electronics Corporation Pattern forming method, semiconductor device manufacturing method and phase shift photomask having dummy gate patterns
US8617797B2 (en) 2005-03-17 2013-12-31 Renesas Electronics Corporation Pattern forming method, semiconductor device manufacturing method and phase shift photomask having dummy gate patterns
JP2006269853A (en) * 2005-03-25 2006-10-05 Sony Corp Exposure apparatus and method of exposure

Also Published As

Publication number Publication date
JPS6250811B2 (en) 1987-10-27

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