JPS5753963A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5753963A
JPS5753963A JP12793480A JP12793480A JPS5753963A JP S5753963 A JPS5753963 A JP S5753963A JP 12793480 A JP12793480 A JP 12793480A JP 12793480 A JP12793480 A JP 12793480A JP S5753963 A JPS5753963 A JP S5753963A
Authority
JP
Japan
Prior art keywords
wiring
layer
sio
semiconductor device
intermediary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12793480A
Other languages
Japanese (ja)
Inventor
Seiji Yasuda
Shunichi Kai
Yutaka Etsuno
Kuniaki Kumamaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12793480A priority Critical patent/JPS5753963A/en
Priority to DE19813136513 priority patent/DE3136513A1/en
Publication of JPS5753963A publication Critical patent/JPS5753963A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: To prevent the electrolytic concentration as well as to improve the withstand voltage for the subject semiconductor device by a method wherein the second wiring, which is equipotential to a longitudinal N+ layer, is provided at the crossing section of the N+ layer and the base wiring, which constitutes the first wiring, through the intermediary of an SiO2 film.
CONSTITUTION: The second wiring 10, which is substantially equipotential to the longitudinal N+ layer, is provided at the crossing part of the N+ layer 4 and the base wiring 9 of the first wiring through the intermediary of the SiO2 film 8. According to this constitution, as the positive electric charge, accumulated on the interface of an N collector 2 and the N+ layer 4 when biased inversely, is not standing opposite to the negative electric charge of the base wiring 9 by sandwiching the SiO2 8 between them, no electric concentration is generated and also no breakdown is generated below the prescribed iverse bias voltage, thereby enabling to improve the withstand-voltage property for the subject semiconductor device.
COPYRIGHT: (C)1982,JPO&Japio
JP12793480A 1980-09-17 1980-09-17 Semiconductor device Pending JPS5753963A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP12793480A JPS5753963A (en) 1980-09-17 1980-09-17 Semiconductor device
DE19813136513 DE3136513A1 (en) 1980-09-17 1981-09-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12793480A JPS5753963A (en) 1980-09-17 1980-09-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5753963A true JPS5753963A (en) 1982-03-31

Family

ID=14972242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12793480A Pending JPS5753963A (en) 1980-09-17 1980-09-17 Semiconductor device

Country Status (2)

Country Link
JP (1) JPS5753963A (en)
DE (1) DE3136513A1 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3341755A (en) * 1964-03-20 1967-09-12 Westinghouse Electric Corp Switching transistor structure and method of making the same
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes

Also Published As

Publication number Publication date
DE3136513A1 (en) 1982-06-09

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