JPS5727015A - Manufacture of silicon thin film - Google Patents

Manufacture of silicon thin film

Info

Publication number
JPS5727015A
JPS5727015A JP10111580A JP10111580A JPS5727015A JP S5727015 A JPS5727015 A JP S5727015A JP 10111580 A JP10111580 A JP 10111580A JP 10111580 A JP10111580 A JP 10111580A JP S5727015 A JPS5727015 A JP S5727015A
Authority
JP
Japan
Prior art keywords
thin film
silicon thin
plasmatic
silicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10111580A
Other languages
Japanese (ja)
Other versions
JPS6329821B2 (en
Inventor
Shigeru Iijima
Kazunobu Tanaka
Hideyo Ogushi
Akihisa Matsuda
Mitsuo Matsumura
Hideo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tonen General Sekiyu KK
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Toa Nenryo Kogyyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Toa Nenryo Kogyyo KK filed Critical Agency of Industrial Science and Technology
Priority to JP10111580A priority Critical patent/JPS5727015A/en
Publication of JPS5727015A publication Critical patent/JPS5727015A/en
Publication of JPS6329821B2 publication Critical patent/JPS6329821B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To eliminate the mixture of impurities as well as to increase electric conductivity for the subject silicon thin film by a method wherein the mixture gas of tetrafluorosilane and silane is used when a silicon film, containing fluorine and hydrogen in a plasmatic atmosphere, is formed. CONSTITUTION:The silicon film is formed on an optional substrate in a plasmatic atmosphere and, in the process wherein a semiconductor element is formed, the mixed gas of tetrafluorosilane and silane is used as raw gas to be used for induction of fluorine and hydrogen on the silicon thin film. Then, when the plasmatic discharge power is reduced relatively in the prescrived mixed gas compression, a silicon thin film having no residual effect of impurities is formed and when the discharge power is increased, a silicon thin film having a high electric conductivity is formed. Through these procedures, the photoelectric converter element and the image element having excellent photoelectic characteristics and the photoelectric converter element having excellent ohmic characteristics can be formed.
JP10111580A 1980-07-25 1980-07-25 Manufacture of silicon thin film Granted JPS5727015A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10111580A JPS5727015A (en) 1980-07-25 1980-07-25 Manufacture of silicon thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10111580A JPS5727015A (en) 1980-07-25 1980-07-25 Manufacture of silicon thin film

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP12356187A Division JPS63126214A (en) 1987-05-20 1987-05-20 Manufacture of silicon thin film

Publications (2)

Publication Number Publication Date
JPS5727015A true JPS5727015A (en) 1982-02-13
JPS6329821B2 JPS6329821B2 (en) 1988-06-15

Family

ID=14292068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10111580A Granted JPS5727015A (en) 1980-07-25 1980-07-25 Manufacture of silicon thin film

Country Status (1)

Country Link
JP (1) JPS5727015A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6070480A (en) * 1983-08-26 1985-04-22 トムソン−セ−エスエフ Manufacture of substrate for electronically controlled equipment and display screen made thereof
JPS60218829A (en) * 1984-04-16 1985-11-01 Canon Inc Formation of deposited film
JPS60218828A (en) * 1984-04-16 1985-11-01 Canon Inc Formation of deposited film
JPS6185818A (en) * 1984-10-04 1986-05-01 Canon Inc Deposition film forming method
JPS6187320A (en) * 1984-10-05 1986-05-02 Canon Inc Formation of deposition film
JPS6188520A (en) * 1984-10-08 1986-05-06 Canon Inc Formation of deposited film
JPS6189624A (en) * 1984-10-09 1986-05-07 Canon Inc Formation of deposited film
JPS61185919A (en) * 1985-02-13 1986-08-19 Canon Inc Formation of deposited film
JPS61191020A (en) * 1985-02-20 1986-08-25 Canon Inc Formation of deposited film
JPS61190922A (en) * 1985-02-19 1986-08-25 Canon Inc Formation of deposited film
JPS6411322A (en) * 1987-07-06 1989-01-13 Mitsui Toatsu Chemicals Manufacture of semiconductor device

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0562746B2 (en) * 1983-08-26 1993-09-09 Thomson Csf
JPS6070480A (en) * 1983-08-26 1985-04-22 トムソン−セ−エスエフ Manufacture of substrate for electronically controlled equipment and display screen made thereof
JPS60218829A (en) * 1984-04-16 1985-11-01 Canon Inc Formation of deposited film
JPS60218828A (en) * 1984-04-16 1985-11-01 Canon Inc Formation of deposited film
JPS6185818A (en) * 1984-10-04 1986-05-01 Canon Inc Deposition film forming method
JPS6187320A (en) * 1984-10-05 1986-05-02 Canon Inc Formation of deposition film
JPS6188520A (en) * 1984-10-08 1986-05-06 Canon Inc Formation of deposited film
JPS6189624A (en) * 1984-10-09 1986-05-07 Canon Inc Formation of deposited film
JPS61185919A (en) * 1985-02-13 1986-08-19 Canon Inc Formation of deposited film
JPS61190922A (en) * 1985-02-19 1986-08-25 Canon Inc Formation of deposited film
JPH0834181B2 (en) * 1985-02-19 1996-03-29 キヤノン株式会社 Deposited film formation method
JPS61191020A (en) * 1985-02-20 1986-08-25 Canon Inc Formation of deposited film
JPS6411322A (en) * 1987-07-06 1989-01-13 Mitsui Toatsu Chemicals Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS6329821B2 (en) 1988-06-15

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