JPS57188833A - Connecting method for material to be connected - Google Patents

Connecting method for material to be connected

Info

Publication number
JPS57188833A
JPS57188833A JP7350081A JP7350081A JPS57188833A JP S57188833 A JPS57188833 A JP S57188833A JP 7350081 A JP7350081 A JP 7350081A JP 7350081 A JP7350081 A JP 7350081A JP S57188833 A JPS57188833 A JP S57188833A
Authority
JP
Japan
Prior art keywords
solder
lump
melted
stem
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7350081A
Other languages
Japanese (ja)
Inventor
Masamichi Kobayashi
Taku Sugawa
Tadashi Okubo
Yoshio Ohashi
Katsu Funada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Hitachi Ome Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd, Hitachi Ome Electronic Co Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP7350081A priority Critical patent/JPS57188833A/en
Publication of JPS57188833A publication Critical patent/JPS57188833A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To improve the strength of bonding by removing the oxide of the surface of a melted solder material just before the material to be connected is mounted to the solder material. CONSTITUTION:Solder foil 2 is placed onto a stem 1, and the solder foil 2 is heated by means of a heating column 8 and changed into a melted solder lump 5. When the nose of a horn 3 contacts with the melted solder lump 5, the horn 3 is ultrasonic-vibrated, the melted solder lump 5 and the stem 1 are wetted, and the melted solder lump 5 is sucked under vacuum by means of a tubular sucking tool 4 and the size of the solder lump 5 is adjusted while the oxide of the surface of the solder lump is scraped through the movement of an oxide film removing plate 11 in parallel with the stem 1. The oxide film of the surface of the solder lump 5 can be removed because the oxide film removing plate 11 is made of a metal, wetting property thereof with solder is inferior.
JP7350081A 1981-05-18 1981-05-18 Connecting method for material to be connected Pending JPS57188833A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7350081A JPS57188833A (en) 1981-05-18 1981-05-18 Connecting method for material to be connected

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7350081A JPS57188833A (en) 1981-05-18 1981-05-18 Connecting method for material to be connected

Publications (1)

Publication Number Publication Date
JPS57188833A true JPS57188833A (en) 1982-11-19

Family

ID=13520032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7350081A Pending JPS57188833A (en) 1981-05-18 1981-05-18 Connecting method for material to be connected

Country Status (1)

Country Link
JP (1) JPS57188833A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6474730A (en) * 1987-09-17 1989-03-20 Rohm Co Ltd Manufacture of electronic parts
JPH0350746A (en) * 1989-07-18 1991-03-05 Matsushita Electric Ind Co Ltd Die bonding equipment
US7159309B2 (en) * 2001-09-19 2007-01-09 Fujitsu Limited Method of mounting electronic component on substrate without generation of voids in bonding material
US20110272453A1 (en) * 2010-05-05 2011-11-10 Schott Solar Ag Method and device for introducing solder onto a workpiece
EP3095544A1 (en) * 2015-05-21 2016-11-23 Airbus DS GmbH Method of joining parts made of materials that are difficult to solder

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6474730A (en) * 1987-09-17 1989-03-20 Rohm Co Ltd Manufacture of electronic parts
JPH0350746A (en) * 1989-07-18 1991-03-05 Matsushita Electric Ind Co Ltd Die bonding equipment
US7159309B2 (en) * 2001-09-19 2007-01-09 Fujitsu Limited Method of mounting electronic component on substrate without generation of voids in bonding material
US20110272453A1 (en) * 2010-05-05 2011-11-10 Schott Solar Ag Method and device for introducing solder onto a workpiece
EP3095544A1 (en) * 2015-05-21 2016-11-23 Airbus DS GmbH Method of joining parts made of materials that are difficult to solder

Similar Documents

Publication Publication Date Title
GB1498928A (en) Unsoldering of semiconductor modules in the flip-chip technique
WO1988002305A3 (en) Process and device for coating three-dimensional bodies with plastic materials
JPS57188833A (en) Connecting method for material to be connected
GB8626254D0 (en) Solder preform
CN108145268A (en) Pcb board and the welding procedure of metal shell butt welding based on air return
CN207571487U (en) A kind of polymorphic structure precision aligns hot pressing abutted equipment
JPS5483374A (en) Chip bonding process
JPS5554265A (en) Reflow soldering method
JPS5640267A (en) Pretinning method for flat lead
JPS566459A (en) Removing method of component carried on printed board
JPS5516722A (en) Brazing process
JPS56100455A (en) Manufacture of semiconductor device
JPS5471980A (en) Adhesion method of semiconductor wafer to lapping surface plate
JPS5639144A (en) Production of investment casting pattern
JPS55127030A (en) Assembling apparatus for semiconductor
JPS57202746A (en) Manufacture of semiconductor device
JPS5566112A (en) Manufacture device of metal container for crystal oscillator useful to secondary processing
JPS57118650A (en) Method for solder welding
JPS54104289A (en) Detachment of printed-substrate mounted parts
JPS56164560A (en) Manufacture of reinforcing mask
JPS54107976A (en) Device for supporting base sheet in the manufacture of decorative sheet
JPS5656775A (en) Soldering device
JPS56135016A (en) Heat fusion bonding and cutting device
JPS5451382A (en) Die bonding method of semiconductor device
JPS5494450A (en) Method of producing frame