JPS57176598A - Write-in circuit for non-volatile analog memory - Google Patents

Write-in circuit for non-volatile analog memory

Info

Publication number
JPS57176598A
JPS57176598A JP6024781A JP6024781A JPS57176598A JP S57176598 A JPS57176598 A JP S57176598A JP 6024781 A JP6024781 A JP 6024781A JP 6024781 A JP6024781 A JP 6024781A JP S57176598 A JPS57176598 A JP S57176598A
Authority
JP
Japan
Prior art keywords
write
circuit
voltage
nvam
pulse
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6024781A
Other languages
Japanese (ja)
Inventor
Minoru Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP6024781A priority Critical patent/JPS57176598A/en
Publication of JPS57176598A publication Critical patent/JPS57176598A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS

Abstract

PURPOSE:To decrease the time required for write of an analog signal by comparing a threshold voltage of an analog memory with a reference voltage and generating a write-in pulse with a peak value in response to the magnitude of the difference. CONSTITUTION:When a difference between a threshold voltage of a non-volatile analog memory NVAM and a reference voltage Vs detected at a threshold value detecting circuit 20 becomes greater, a voltage outputted from a voltage control circuit 21 is quickly increased and the peak value of write-in pulse generated from a write-in pulse generating circuit 22 is quickly increased by the increase. As a result, the threshold voltage of the NVAM is rapidly closed to the objective value. On the other hand, when the threshold voltage of the NVAM closes to a desired value and the difference with the voltage Vs becomes smaller, the increment of the write-in pulse is decreased, allowing to adjust the threshold value of the NVAM minutely. When the both are coincident, the circuit 20 gives an inhibiting signal Vy to the circuit 22 to complete the write-in operation.
JP6024781A 1981-04-20 1981-04-20 Write-in circuit for non-volatile analog memory Pending JPS57176598A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6024781A JPS57176598A (en) 1981-04-20 1981-04-20 Write-in circuit for non-volatile analog memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6024781A JPS57176598A (en) 1981-04-20 1981-04-20 Write-in circuit for non-volatile analog memory

Publications (1)

Publication Number Publication Date
JPS57176598A true JPS57176598A (en) 1982-10-29

Family

ID=13136650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6024781A Pending JPS57176598A (en) 1981-04-20 1981-04-20 Write-in circuit for non-volatile analog memory

Country Status (1)

Country Link
JP (1) JPS57176598A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61165892A (en) * 1985-01-17 1986-07-26 Matsushita Electric Ind Co Ltd Writing circuit of nonvolatile memory
US4627027A (en) * 1982-09-01 1986-12-02 Sanyo Electric Co., Ltd. Analog storing and reproducing apparatus utilizing non-volatile memory elements
JPS6238024A (en) * 1985-08-12 1987-02-19 Matsushita Electric Ind Co Ltd Voltage detection circuit
EP0440653A1 (en) * 1988-07-13 1991-08-14 Information Storage Devices High density integrated circuit analog signal recording and playback system.
EP0551381A1 (en) * 1990-09-26 1993-07-21 Information Storage Devices, Inc. Writable distributed non-volatile analog reference system and method for analog signal recording and playback
JPH05182476A (en) * 1992-06-04 1993-07-23 Toshiba Corp Nonvolatile semiconductor memory
EP0565622A1 (en) * 1991-01-02 1993-10-20 Information Storage Devices, Inc. Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback
WO1995020225A1 (en) * 1994-01-21 1995-07-27 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
US5726934A (en) * 1996-04-09 1998-03-10 Information Storage Devices, Inc. Method and apparatus for analog reading values stored in floating gate structures
US5742543A (en) * 1996-08-19 1998-04-21 Intel Corporation Flash memory device having a page mode of operation
US5745414A (en) * 1994-09-14 1998-04-28 Information Storage Devices, Inc. Integrated circuit system having reference cells for improving the reading of storage cells
US5828592A (en) * 1997-03-12 1998-10-27 Information Storage Devices, Inc. Analog signal recording and playback integrated circuit and message management system
US5828616A (en) * 1994-06-02 1998-10-27 Intel Corporation Sensing scheme for flash memory with multilevel cells
US5835412A (en) * 1996-05-21 1998-11-10 Information Storage Devices, Inc. Linearized storage cell for integrated circuit analog signal recording and playback
US5969987A (en) * 1995-07-31 1999-10-19 Information Storage Devices, Inc. Non-volatile electrically alterable semiconductor memory for analog and digital storage
JP2002208293A (en) * 2001-01-11 2002-07-26 Oki Electric Ind Co Ltd Semiconductor memory
US6504762B1 (en) 1988-06-08 2003-01-07 Sandisk Corporation Highly compact EPROM and flash EEPROM devices

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4627027A (en) * 1982-09-01 1986-12-02 Sanyo Electric Co., Ltd. Analog storing and reproducing apparatus utilizing non-volatile memory elements
JPS61165892A (en) * 1985-01-17 1986-07-26 Matsushita Electric Ind Co Ltd Writing circuit of nonvolatile memory
JPS6238024A (en) * 1985-08-12 1987-02-19 Matsushita Electric Ind Co Ltd Voltage detection circuit
US6504762B1 (en) 1988-06-08 2003-01-07 Sandisk Corporation Highly compact EPROM and flash EEPROM devices
EP0440653A1 (en) * 1988-07-13 1991-08-14 Information Storage Devices High density integrated circuit analog signal recording and playback system.
JPH04500576A (en) * 1988-07-13 1992-01-30 インフオメーシヨン・ストレージ・デイヴアイセズ・インコーポレーテツド High-density integrated circuit analog signal recording and playback equipment
EP0551381A4 (en) * 1990-09-26 1997-04-02 Information Storage Devices Writable distributed non-volatile analog reference system and method for analog signal recording and playback
EP0551381A1 (en) * 1990-09-26 1993-07-21 Information Storage Devices, Inc. Writable distributed non-volatile analog reference system and method for analog signal recording and playback
EP0565622A1 (en) * 1991-01-02 1993-10-20 Information Storage Devices, Inc. Source follower storage cell and improved method and apparatus for iterative write for integrated circuit analog signal recording and playback
EP0565622A4 (en) * 1991-01-02 1994-03-23 Information Storage Devices, Inc.
JPH05182476A (en) * 1992-06-04 1993-07-23 Toshiba Corp Nonvolatile semiconductor memory
JP2502008B2 (en) * 1992-06-04 1996-05-29 株式会社東芝 Non-volatile semiconductor memory
WO1995020225A1 (en) * 1994-01-21 1995-07-27 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
US5828616A (en) * 1994-06-02 1998-10-27 Intel Corporation Sensing scheme for flash memory with multilevel cells
US5745414A (en) * 1994-09-14 1998-04-28 Information Storage Devices, Inc. Integrated circuit system having reference cells for improving the reading of storage cells
US5754470A (en) * 1994-09-14 1998-05-19 Information Storage Devices, Inc. Apparatus for programming a voltage within a storage element
US5963462A (en) * 1994-09-14 1999-10-05 Information Storage Devices, Inc. Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method
US5969987A (en) * 1995-07-31 1999-10-19 Information Storage Devices, Inc. Non-volatile electrically alterable semiconductor memory for analog and digital storage
US5973956A (en) * 1995-07-31 1999-10-26 Information Storage Devices, Inc. Non-volatile electrically alterable semiconductor memory for analog and digital storage
US5808938A (en) * 1996-04-09 1998-09-15 Information Storage Devices, Inc. Method and apparatus for reading analog values stored in floating gate nand structures
US5909393A (en) * 1996-04-09 1999-06-01 Information Storage Devices, Inc. Method and apparatus for reading analog values stored in floating gate NAND structures
US5726934A (en) * 1996-04-09 1998-03-10 Information Storage Devices, Inc. Method and apparatus for analog reading values stored in floating gate structures
US5835412A (en) * 1996-05-21 1998-11-10 Information Storage Devices, Inc. Linearized storage cell for integrated circuit analog signal recording and playback
US5742543A (en) * 1996-08-19 1998-04-21 Intel Corporation Flash memory device having a page mode of operation
US5828592A (en) * 1997-03-12 1998-10-27 Information Storage Devices, Inc. Analog signal recording and playback integrated circuit and message management system
JP2002208293A (en) * 2001-01-11 2002-07-26 Oki Electric Ind Co Ltd Semiconductor memory

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