JPS57173966A - Solid state image pickup device - Google Patents

Solid state image pickup device

Info

Publication number
JPS57173966A
JPS57173966A JP56059612A JP5961281A JPS57173966A JP S57173966 A JPS57173966 A JP S57173966A JP 56059612 A JP56059612 A JP 56059612A JP 5961281 A JP5961281 A JP 5961281A JP S57173966 A JPS57173966 A JP S57173966A
Authority
JP
Japan
Prior art keywords
electrode
image pickup
pickup device
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56059612A
Other languages
Japanese (ja)
Other versions
JPH023552B2 (en
Inventor
Kazuhiro Kawajiri
Yuzo Mizobuchi
Mitsuo Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP56059612A priority Critical patent/JPS57173966A/en
Publication of JPS57173966A publication Critical patent/JPS57173966A/en
Publication of JPH023552B2 publication Critical patent/JPH023552B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To manufacture an inexpensive, high efficiency optical image pickup device by a method wherein a photodetector layer and electrodes are formed of amorphous Si in a solid state image pickup device with a photodetector on a semiconductor substrate provided with a scanning circuit. CONSTITUTION:An n<+> type region 11 is provided for the formation of a diode and, at the same time, a scanning circuit forming p<+> type region 12 (CCD) or an n<+> type region 13 (BBD) are formed on a p type semiconductor substrate 10. A gate electrode 14 is built on the substrate 10 across an insulator film 15 and an insulator layer 16 is laid on the electrode 14. Next, on the substrate 10, a diode electrode 17, and a photodetecting layer 18 and a transparent electrode 19 forming a photoconductive layer or photodiode or phototransistor are provided on the substrate 10. The electrode 17, photodetector 18, and transparent electrode 19 are composed of amorphous Si and formed in an uninterrupted process.
JP56059612A 1981-04-20 1981-04-20 Solid state image pickup device Granted JPS57173966A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56059612A JPS57173966A (en) 1981-04-20 1981-04-20 Solid state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56059612A JPS57173966A (en) 1981-04-20 1981-04-20 Solid state image pickup device

Publications (2)

Publication Number Publication Date
JPS57173966A true JPS57173966A (en) 1982-10-26
JPH023552B2 JPH023552B2 (en) 1990-01-24

Family

ID=13118239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56059612A Granted JPS57173966A (en) 1981-04-20 1981-04-20 Solid state image pickup device

Country Status (1)

Country Link
JP (1) JPS57173966A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8058615B2 (en) 2008-02-29 2011-11-15 Sionyx, Inc. Wide spectral range hybrid image detector
US9666636B2 (en) 2011-06-09 2017-05-30 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673250B2 (en) 2013-06-29 2017-06-06 Sionyx, Llc Shallow trench textured regions and associated methods
US9741761B2 (en) 2010-04-21 2017-08-22 Sionyx, Llc Photosensitive imaging devices and associated methods
US9761739B2 (en) 2010-06-18 2017-09-12 Sionyx, Llc High speed photosensitive devices and associated methods
US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
US9905599B2 (en) 2012-03-22 2018-02-27 Sionyx, Llc Pixel isolation elements, devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US10244188B2 (en) 2011-07-13 2019-03-26 Sionyx, Llc Biometric imaging devices and associated methods
US10361083B2 (en) 2004-09-24 2019-07-23 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10374109B2 (en) 2001-05-25 2019-08-06 President And Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717185A (en) * 1980-07-04 1982-01-28 Canon Inc Photosensor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717185A (en) * 1980-07-04 1982-01-28 Canon Inc Photosensor

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10374109B2 (en) 2001-05-25 2019-08-06 President And Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US10741399B2 (en) 2004-09-24 2020-08-11 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10361083B2 (en) 2004-09-24 2019-07-23 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US8058615B2 (en) 2008-02-29 2011-11-15 Sionyx, Inc. Wide spectral range hybrid image detector
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US10361232B2 (en) 2009-09-17 2019-07-23 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US10229951B2 (en) 2010-04-21 2019-03-12 Sionyx, Llc Photosensitive imaging devices and associated methods
US9741761B2 (en) 2010-04-21 2017-08-22 Sionyx, Llc Photosensitive imaging devices and associated methods
US9761739B2 (en) 2010-06-18 2017-09-12 Sionyx, Llc High speed photosensitive devices and associated methods
US10505054B2 (en) 2010-06-18 2019-12-10 Sionyx, Llc High speed photosensitive devices and associated methods
US10269861B2 (en) 2011-06-09 2019-04-23 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US9666636B2 (en) 2011-06-09 2017-05-30 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US10244188B2 (en) 2011-07-13 2019-03-26 Sionyx, Llc Biometric imaging devices and associated methods
US10224359B2 (en) 2012-03-22 2019-03-05 Sionyx, Llc Pixel isolation elements, devices and associated methods
US9905599B2 (en) 2012-03-22 2018-02-27 Sionyx, Llc Pixel isolation elements, devices and associated methods
US9762830B2 (en) 2013-02-15 2017-09-12 Sionyx, Llc High dynamic range CMOS image sensor having anti-blooming properties and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US10347682B2 (en) 2013-06-29 2019-07-09 Sionyx, Llc Shallow trench textured regions and associated methods
US9673250B2 (en) 2013-06-29 2017-06-06 Sionyx, Llc Shallow trench textured regions and associated methods
US11069737B2 (en) 2013-06-29 2021-07-20 Sionyx, Llc Shallow trench textured regions and associated methods

Also Published As

Publication number Publication date
JPH023552B2 (en) 1990-01-24

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