JPS57152166A - Manufacture of schottky barrier gate field effect transistor - Google Patents

Manufacture of schottky barrier gate field effect transistor

Info

Publication number
JPS57152166A
JPS57152166A JP3698381A JP3698381A JPS57152166A JP S57152166 A JPS57152166 A JP S57152166A JP 3698381 A JP3698381 A JP 3698381A JP 3698381 A JP3698381 A JP 3698381A JP S57152166 A JPS57152166 A JP S57152166A
Authority
JP
Japan
Prior art keywords
film
source
alloys
manufacture
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3698381A
Other languages
Japanese (ja)
Other versions
JPH0235462B2 (en
Inventor
Keiichi Ohata
Yoichiro Takayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3698381A priority Critical patent/JPS57152166A/en
Publication of JPS57152166A publication Critical patent/JPS57152166A/en
Publication of JPH0235462B2 publication Critical patent/JPH0235462B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To form a gate electrode and N<+> region of source and drain by subjecting ion implantation making use of the self-alignment process as well as to reduce the gate resistance by a method of manufacturing the GaAs MESFET. CONSTITUTION:The first metallic film 41 contaiing a metal such as Nb, Ta, Mo, W and the like or the alloys thereof or the other alloys containing 20atm% or less of metal such as Ti, Cr, Zr and the like in addition to the said metals and alloys is formed on an N type channel layer 12 formed on a high resistant GaAs substrate 11 and the second metallic film 42 is formed on the said film 41 into the size larger than that of the film 41 and the ion 43 of the donor impurities is implanted in the source and drain regions 44 and 45. Then the surface is coated with a protecting film 46 for annealing to activate the implanted ion forming the N<+> regions 13 and 14. The surface protecting film is further removed to form the source and drain electrode 16 and 17.
JP3698381A 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor Granted JPS57152166A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3698381A JPS57152166A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3698381A JPS57152166A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS57152166A true JPS57152166A (en) 1982-09-20
JPH0235462B2 JPH0235462B2 (en) 1990-08-10

Family

ID=12484979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3698381A Granted JPS57152166A (en) 1981-03-13 1981-03-13 Manufacture of schottky barrier gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS57152166A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861693A (en) * 1981-10-09 1983-04-12 Kokusai Denshin Denwa Co Ltd <Kdd> Distribution feedback type semiconductor laser
JPS59171164A (en) * 1983-03-18 1984-09-27 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS6022378A (en) * 1983-07-18 1985-02-04 Nippon Telegr & Teleph Corp <Ntt> Field-effect transistor and manufacture thereof
JPS6068662A (en) * 1983-09-26 1985-04-19 Toshiba Corp Semiconductor device and manufacture thereof
JPS60145673A (en) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS6143481A (en) * 1984-08-08 1986-03-03 Oki Electric Ind Co Ltd Manufacture of schottky gate field effect transistor
JPS6155966A (en) * 1984-08-27 1986-03-20 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS61216484A (en) * 1985-03-22 1986-09-26 Mitsubishi Electric Corp Manufacture of field effect transistor
JPS6298780A (en) * 1985-10-21 1987-05-08 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド Manufacture of self-aligning gaas digital integrated circuit
JPS647570A (en) * 1987-01-12 1989-01-11 Int Standard Electric Corp Manufacture of self-aligning field effect transistor
JPH01198079A (en) * 1988-02-02 1989-08-09 Mitsubishi Electric Corp Manufacture of semiconductor device
JP2013191655A (en) * 2012-03-13 2013-09-26 Nippon Telegr & Teleph Corp <Ntt> Heterojunction bipolar transistor and manufacturing method of the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012985A (en) * 1973-06-01 1975-02-10
JPS5197984A (en) * 1975-02-26 1976-08-28 Shotsutoki baria geetodenkaikokatoranjisuta oyobi sonoseizohoho
JPS57128071A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Field-effect type semiconductor device and manufacture thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5012985A (en) * 1973-06-01 1975-02-10
JPS5197984A (en) * 1975-02-26 1976-08-28 Shotsutoki baria geetodenkaikokatoranjisuta oyobi sonoseizohoho
JPS57128071A (en) * 1981-01-30 1982-08-09 Fujitsu Ltd Field-effect type semiconductor device and manufacture thereof

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861693A (en) * 1981-10-09 1983-04-12 Kokusai Denshin Denwa Co Ltd <Kdd> Distribution feedback type semiconductor laser
JPS59171164A (en) * 1983-03-18 1984-09-27 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JPS6022378A (en) * 1983-07-18 1985-02-04 Nippon Telegr & Teleph Corp <Ntt> Field-effect transistor and manufacture thereof
JPS6068662A (en) * 1983-09-26 1985-04-19 Toshiba Corp Semiconductor device and manufacture thereof
JPS60145673A (en) * 1984-01-09 1985-08-01 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS6143481A (en) * 1984-08-08 1986-03-03 Oki Electric Ind Co Ltd Manufacture of schottky gate field effect transistor
JPS6155966A (en) * 1984-08-27 1986-03-20 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS61216484A (en) * 1985-03-22 1986-09-26 Mitsubishi Electric Corp Manufacture of field effect transistor
JPS6298780A (en) * 1985-10-21 1987-05-08 アイテイ−テイ−・インダストリ−ズ・インコ−ポレ−テツド Manufacture of self-aligning gaas digital integrated circuit
JP2624656B2 (en) * 1985-10-21 1997-06-25 アイティーティー・インダストリーズ・インコーポレーテッド Method of manufacturing GaAs field effect transistor
JPS647570A (en) * 1987-01-12 1989-01-11 Int Standard Electric Corp Manufacture of self-aligning field effect transistor
JPH01198079A (en) * 1988-02-02 1989-08-09 Mitsubishi Electric Corp Manufacture of semiconductor device
JP2013191655A (en) * 2012-03-13 2013-09-26 Nippon Telegr & Teleph Corp <Ntt> Heterojunction bipolar transistor and manufacturing method of the same

Also Published As

Publication number Publication date
JPH0235462B2 (en) 1990-08-10

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