JPS57122574A - Mos type integrated circuit - Google Patents

Mos type integrated circuit

Info

Publication number
JPS57122574A
JPS57122574A JP56007887A JP788781A JPS57122574A JP S57122574 A JPS57122574 A JP S57122574A JP 56007887 A JP56007887 A JP 56007887A JP 788781 A JP788781 A JP 788781A JP S57122574 A JPS57122574 A JP S57122574A
Authority
JP
Japan
Prior art keywords
terminal
switch
positively
biased
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56007887A
Other languages
Japanese (ja)
Inventor
Yukimasa Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56007887A priority Critical patent/JPS57122574A/en
Publication of JPS57122574A publication Critical patent/JPS57122574A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the high speed back gete effect in the state that the bidirectionality of an MOS transistor is maintained by connecting a terminal of a semiconductor substrate to variable voltage applying means. CONSTITUTION:The terminal 1 of an MOS transitor T1 made of a source terminal 2, a drain terminal 3, a gate terminal 4 and a substrate terminal 1 is connected to a substrate potential terminal VB through a switch SW1. In this structure, when a pulse repetition signal is inputted to the terminal 4, in the case that the terminals 2, 3 are ground potential and the switch SW is OFF, the terminal 1 is negatively biased upon repetition of the pulse signal, the threshold voltage value Vth of the TR T1 is shifted positively, and the conductance gm of the TR T1 is lowered. Assume now that the potential VB is 0 and the switch SW1 is ON, the gm of the TR T1 is recoveed. When, the terminal 4 is biased positively and the terminal 2 is opened, if the switch SW1 is set OFF and the terminal 3 is positively biased, it can prevent the decrease in the gm.
JP56007887A 1981-01-23 1981-01-23 Mos type integrated circuit Pending JPS57122574A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56007887A JPS57122574A (en) 1981-01-23 1981-01-23 Mos type integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56007887A JPS57122574A (en) 1981-01-23 1981-01-23 Mos type integrated circuit

Publications (1)

Publication Number Publication Date
JPS57122574A true JPS57122574A (en) 1982-07-30

Family

ID=11678097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56007887A Pending JPS57122574A (en) 1981-01-23 1981-01-23 Mos type integrated circuit

Country Status (1)

Country Link
JP (1) JPS57122574A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0250482A (en) * 1988-06-20 1990-02-20 General Electric Co (Ge) Bidirectional field effect semiconductor device and circuit
JPH02179031A (en) * 1988-12-28 1990-07-12 Mitsubishi Electric Corp Semiconductor device
US6097113A (en) * 1997-10-14 2000-08-01 Mitsubishi Denki Kabushiki Kaisha MOS integrated circuit device operating with low power consumption

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270775A (en) * 1975-12-09 1977-06-13 Matsushita Electronics Corp Integrated circuit containing mos-type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5270775A (en) * 1975-12-09 1977-06-13 Matsushita Electronics Corp Integrated circuit containing mos-type semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0250482A (en) * 1988-06-20 1990-02-20 General Electric Co (Ge) Bidirectional field effect semiconductor device and circuit
JPH02179031A (en) * 1988-12-28 1990-07-12 Mitsubishi Electric Corp Semiconductor device
US6097113A (en) * 1997-10-14 2000-08-01 Mitsubishi Denki Kabushiki Kaisha MOS integrated circuit device operating with low power consumption
US6333571B1 (en) 1997-10-14 2001-12-25 Mitsubishi Denki Kabushiki Kaisha MOS integrated circuit device operating with low power consumption

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