JPS5698827A - Electron beam exposure device - Google Patents
Electron beam exposure deviceInfo
- Publication number
- JPS5698827A JPS5698827A JP77980A JP77980A JPS5698827A JP S5698827 A JPS5698827 A JP S5698827A JP 77980 A JP77980 A JP 77980A JP 77980 A JP77980 A JP 77980A JP S5698827 A JPS5698827 A JP S5698827A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- electrode
- electron
- dimension
- aligned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/06—Electron sources; Electron guns
- H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Electron Beam Exposure (AREA)
Abstract
PURPOSE:To intend to increase the exposure velocity by using a cool cathode electron beam generating device which can control the generation and the stop of the electron beam easily with the aid of an applied voltage and further generating a numerous electron beam from its device simultaneously. CONSTITUTION:An electron generating part 1 is set by arranging electrodes 3 and 5 through an insulating film 5 and aligned in one dimension or two dimension by separating between the elements 2. When approximately 10V of voltage is applied between a positive electrode 3 and an electrode 4, a tunnel current flows. At this time, when the surface of the electrode 3 is maintained in vacuum, a part of electrons having higher energy flies out into the vacuum through the electrode 3 and generates the electron beam in the B1 direction shown by an arrow. This beam can be easily generated or stopped and the electron having an arranged form is obtained. Since the electron beam is aligned numerously and generated simultaneously, the exposure velocity can be increased. When the arranging pattern of the electron beam is contracted and projected with a lens, the contracted pattern can be exposured and is effective to an economical production of IC.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP779A JPS54106349A (en) | 1977-12-30 | 1979-01-04 | Buttonhole lock stitch machine |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5698827A true JPS5698827A (en) | 1981-08-08 |
Family
ID=11462398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP77980A Pending JPS5698827A (en) | 1979-01-04 | 1980-01-08 | Electron beam exposure device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5698827A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61193346A (en) * | 1985-02-14 | 1986-08-27 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Electron beam apparatus having semiconductor electron emitting body |
JPS63950A (en) * | 1986-06-19 | 1988-01-05 | Canon Inc | Electron emitting device |
JPS6340242A (en) * | 1986-08-05 | 1988-02-20 | Canon Inc | Charged particle generator |
JPS63269520A (en) * | 1987-04-28 | 1988-11-07 | Canon Inc | Electron beam lithography equipment |
JPS63269521A (en) * | 1987-04-28 | 1988-11-07 | Canon Inc | Electron beam lithography equipment |
EP0394698A2 (en) * | 1989-03-30 | 1990-10-31 | Canon Kabushiki Kaisha | Electron beam lithography machine and image display apparatus |
EP0780879A3 (en) * | 1995-12-21 | 1998-01-07 | Nec Corporation | Electron beam exposure apparatus |
CN103299390A (en) * | 2010-10-25 | 2013-09-11 | 弗劳恩霍弗实用研究促进协会 | Device for producing an electron beam |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5091274A (en) * | 1973-12-12 | 1975-07-21 | ||
JPS518874A (en) * | 1974-07-10 | 1976-01-24 | Hitachi Ltd | |
JPS5116754A (en) * | 1974-08-01 | 1976-02-10 | Tore Eng Co Ltd | Bod seibunganjuhaisuino shorihoho |
-
1980
- 1980-01-08 JP JP77980A patent/JPS5698827A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5091274A (en) * | 1973-12-12 | 1975-07-21 | ||
JPS518874A (en) * | 1974-07-10 | 1976-01-24 | Hitachi Ltd | |
JPS5116754A (en) * | 1974-08-01 | 1976-02-10 | Tore Eng Co Ltd | Bod seibunganjuhaisuino shorihoho |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61193346A (en) * | 1985-02-14 | 1986-08-27 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Electron beam apparatus having semiconductor electron emitting body |
JPS63950A (en) * | 1986-06-19 | 1988-01-05 | Canon Inc | Electron emitting device |
JPS6340242A (en) * | 1986-08-05 | 1988-02-20 | Canon Inc | Charged particle generator |
JPS63269520A (en) * | 1987-04-28 | 1988-11-07 | Canon Inc | Electron beam lithography equipment |
JPS63269521A (en) * | 1987-04-28 | 1988-11-07 | Canon Inc | Electron beam lithography equipment |
EP0394698A2 (en) * | 1989-03-30 | 1990-10-31 | Canon Kabushiki Kaisha | Electron beam lithography machine and image display apparatus |
US5569974A (en) * | 1989-03-30 | 1996-10-29 | Canon Kabushiki Kaisha | Electron-emitting device and electron beam lithograph machine and image display apparatus making use of it |
EP0780879A3 (en) * | 1995-12-21 | 1998-01-07 | Nec Corporation | Electron beam exposure apparatus |
CN103299390A (en) * | 2010-10-25 | 2013-09-11 | 弗劳恩霍弗实用研究促进协会 | Device for producing an electron beam |
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