JPS5696883A - Manufacture of silicon carbide diode - Google Patents

Manufacture of silicon carbide diode

Info

Publication number
JPS5696883A
JPS5696883A JP17333479A JP17333479A JPS5696883A JP S5696883 A JPS5696883 A JP S5696883A JP 17333479 A JP17333479 A JP 17333479A JP 17333479 A JP17333479 A JP 17333479A JP S5696883 A JPS5696883 A JP S5696883A
Authority
JP
Japan
Prior art keywords
solution
sic
solvent
temperature gradient
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17333479A
Other languages
Japanese (ja)
Inventor
Tatsuro Beppu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP17333479A priority Critical patent/JPS5696883A/en
Publication of JPS5696883A publication Critical patent/JPS5696883A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain the LED wafer by using a vertical furnace with a specified temperature gradient, using especially a rare earth element as a solvent, keeping the condition of the interface between a liquid phase and a solid phase, estabilishing a thickness, maintaining the solute source on the solution so that the solute source is not drained, thereby forming an ingot. CONSTITUTION:The temperature gradient is given to the SiC+Sc solution 4 under the state solute source SiC powder 5 is floated, and an SiC crystal 6 is formed from the bottom of a crucible 3. Al is added to the solution to obtain the P type. A reacting tube 1 is heated by flowing inactive gas, a specified temperature gradient is maintained in the solution 4. In the vicinity of the interface between the liquid and solid phases, the gradient is 25 deg.C/cm. A coil and the crucible are relatively moved with about 1,800 deg.C being maintained. During this period, the SiC which floats on the surface of the solution is gradually resolved, and the growing is continued under the same condition. The SiC powder is finished to the solubility which is higher than that of the solvent metal. A wafer is cut out from the ingot obtained, and one surface thereof is contacted with Si solution containing C, and N epitaxial layer is layered in N2. Then, a bright, blue LED can be obtained without the effects of the rare earth metal element in the solvent.
JP17333479A 1979-12-29 1979-12-29 Manufacture of silicon carbide diode Pending JPS5696883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17333479A JPS5696883A (en) 1979-12-29 1979-12-29 Manufacture of silicon carbide diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17333479A JPS5696883A (en) 1979-12-29 1979-12-29 Manufacture of silicon carbide diode

Publications (1)

Publication Number Publication Date
JPS5696883A true JPS5696883A (en) 1981-08-05

Family

ID=15958497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17333479A Pending JPS5696883A (en) 1979-12-29 1979-12-29 Manufacture of silicon carbide diode

Country Status (1)

Country Link
JP (1) JPS5696883A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE34861E (en) * 1987-10-26 1995-02-14 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
KR100702449B1 (en) * 2005-12-13 2007-04-03 서울반도체 주식회사 Method for manufacturing light emitting device
US7419545B2 (en) 2004-12-28 2008-09-02 Matsushita Electric Industrial Co., Ltd. Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE34861E (en) * 1987-10-26 1995-02-14 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US7419545B2 (en) 2004-12-28 2008-09-02 Matsushita Electric Industrial Co., Ltd. Method for producing silicon carbide (SiC) single crystal and silicon carbide (SiC) single crystal obtained by such method
KR100702449B1 (en) * 2005-12-13 2007-04-03 서울반도체 주식회사 Method for manufacturing light emitting device

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