JPS5668988A - Semiconductor memory - Google Patents
Semiconductor memoryInfo
- Publication number
- JPS5668988A JPS5668988A JP14310479A JP14310479A JPS5668988A JP S5668988 A JPS5668988 A JP S5668988A JP 14310479 A JP14310479 A JP 14310479A JP 14310479 A JP14310479 A JP 14310479A JP S5668988 A JPS5668988 A JP S5668988A
- Authority
- JP
- Japan
- Prior art keywords
- memory
- blocks
- block
- selection
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Abstract
PURPOSE:To secure the power-down state with every nonselection block and thus ensuring the low power consumption even when the chip is selected, by forming the memory into blocks in a semiconductor memory chip and then providing the power-down element at the memory block decoder part. CONSTITUTION:The X decoders 21-24 and the memory matrices 11-14 are divided into four memory blocks 211-214, and then the memory block selection/nonselection circuit 22 is actuated by the addresses A1 and A2 to select the memory blocks. The circuit 22 delivers the output to the Y decoders 21-22 and supplies the power- down signal to the blocks except for the selection block. Thus other blocks are set under the power-down state, and at the same time the X decoder 21 of the selected block is made active. Then the X selection is carried out by the addresses A3-A6; and the Y selection is done through the Y decoder 23 and by the addresses A7-A8 respectively.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14310479A JPS5668988A (en) | 1979-11-05 | 1979-11-05 | Semiconductor memory |
US06/192,203 US4447895A (en) | 1979-10-04 | 1980-09-30 | Semiconductor memory device |
DE3037130A DE3037130C2 (en) | 1979-10-04 | 1980-10-01 | Address designation circuit |
GB8031956A GB2060303B (en) | 1979-10-04 | 1980-10-03 | Semiconductor memory device |
US06493605 US4509148B1 (en) | 1979-10-04 | 1983-05-11 | Semiconductor memory device |
GB08313395A GB2120036B (en) | 1979-10-04 | 1983-05-16 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14310479A JPS5668988A (en) | 1979-11-05 | 1979-11-05 | Semiconductor memory |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5668988A true JPS5668988A (en) | 1981-06-09 |
Family
ID=15330993
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14310479A Pending JPS5668988A (en) | 1979-10-04 | 1979-11-05 | Semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5668988A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5693177A (en) * | 1979-12-26 | 1981-07-28 | Nec Corp | Static mos memory integrated circuit |
JPS60167188A (en) * | 1984-12-24 | 1985-08-30 | Hitachi Ltd | Semiconductor memory |
JPS60170090A (en) * | 1984-02-13 | 1985-09-03 | Hitachi Ltd | Semiconductor integrated circuit |
JPH01500469A (en) * | 1986-07-15 | 1989-02-16 | サンドストランド・データ・コントロール・インコーポレーテッド | Terrain map memory matrixing |
JPH01146190A (en) * | 1987-08-17 | 1989-06-08 | Texas Instr Inc <Ti> | Solid memory system |
JPH0391193A (en) * | 1989-08-31 | 1991-04-16 | Fujitsu Ltd | Semiconductor storage device |
EP0473139A2 (en) * | 1990-08-30 | 1992-03-04 | Gold Star Co. Ltd | Memory decoding system for a portable data terminal |
-
1979
- 1979-11-05 JP JP14310479A patent/JPS5668988A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5693177A (en) * | 1979-12-26 | 1981-07-28 | Nec Corp | Static mos memory integrated circuit |
JPS6249675B2 (en) * | 1979-12-26 | 1987-10-20 | Nippon Electric Co | |
JPS60170090A (en) * | 1984-02-13 | 1985-09-03 | Hitachi Ltd | Semiconductor integrated circuit |
US5311482A (en) * | 1984-02-13 | 1994-05-10 | Hitachi, Ltd. | Semiconductor integrated circuit |
JPS60167188A (en) * | 1984-12-24 | 1985-08-30 | Hitachi Ltd | Semiconductor memory |
JPH0472318B2 (en) * | 1984-12-24 | 1992-11-17 | Hitachi Ltd | |
JPH01500469A (en) * | 1986-07-15 | 1989-02-16 | サンドストランド・データ・コントロール・インコーポレーテッド | Terrain map memory matrixing |
JPH01146190A (en) * | 1987-08-17 | 1989-06-08 | Texas Instr Inc <Ti> | Solid memory system |
JPH0391193A (en) * | 1989-08-31 | 1991-04-16 | Fujitsu Ltd | Semiconductor storage device |
EP0473139A2 (en) * | 1990-08-30 | 1992-03-04 | Gold Star Co. Ltd | Memory decoding system for a portable data terminal |
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