JPS5629231A - Radiation sensitive material and pattern forming method - Google Patents
Radiation sensitive material and pattern forming methodInfo
- Publication number
- JPS5629231A JPS5629231A JP10400679A JP10400679A JPS5629231A JP S5629231 A JPS5629231 A JP S5629231A JP 10400679 A JP10400679 A JP 10400679A JP 10400679 A JP10400679 A JP 10400679A JP S5629231 A JPS5629231 A JP S5629231A
- Authority
- JP
- Japan
- Prior art keywords
- soln
- chlorostyrene
- bromostyrene
- radiation sensitive
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To enhance the sensitivity, heat stability and dry etching resistance of a radiation sensitive material and improve the adhesion between the substrate and a resist layer by using a homopolymer or a copolymer of chlorostyrene or bromostyrene or a copolymer of chlorostyrene or bromostyrene and a styrene type monomer.
CONSTITUTION: A chlorostyrene or bromostyrene homopolymer having 5W10 millions mol. wt. or a copolymer contg. ≥10mol% chlorostyrene or bromostyrene monomer units and having 5W10 millions mol. wt. is dissolved in chlorobenzene or the like, and this soln. is applied to a substrate such as a silicon wafer and prebacked to form a radiation sensitive film. This film is irradiated with electron beams or the like, and the exposed portion is removed with a dioxane-isoamyl acetate mixed soln. to obtain a resist image. The substrate is then etched with a wet process etching soln. such as a 50% HF soln. or a 40.1% NH4F soln. to obtain a minute pattern. In the wet etching the resist image is not peeled off, and a material having superior suitability to dry etching such as ion milling and plasma etching is obtd.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10400679A JPS5629231A (en) | 1979-08-17 | 1979-08-17 | Radiation sensitive material and pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10400679A JPS5629231A (en) | 1979-08-17 | 1979-08-17 | Radiation sensitive material and pattern forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5629231A true JPS5629231A (en) | 1981-03-24 |
| JPS5746055B2 JPS5746055B2 (en) | 1982-10-01 |
Family
ID=14369173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10400679A Granted JPS5629231A (en) | 1979-08-17 | 1979-08-17 | Radiation sensitive material and pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5629231A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56147144A (en) * | 1980-04-17 | 1981-11-14 | Matsushita Electric Ind Co Ltd | Negative type electron beam resist material |
| JPS58187926A (en) * | 1982-04-28 | 1983-11-02 | Toyo Soda Mfg Co Ltd | Method for developing radiation sensitive negative type resist |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5320771A (en) * | 1976-08-06 | 1978-02-25 | Western Electric Co | Method of manufacturing semiconductor element |
-
1979
- 1979-08-17 JP JP10400679A patent/JPS5629231A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5320771A (en) * | 1976-08-06 | 1978-02-25 | Western Electric Co | Method of manufacturing semiconductor element |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56147144A (en) * | 1980-04-17 | 1981-11-14 | Matsushita Electric Ind Co Ltd | Negative type electron beam resist material |
| JPS58187926A (en) * | 1982-04-28 | 1983-11-02 | Toyo Soda Mfg Co Ltd | Method for developing radiation sensitive negative type resist |
| JPH0546535B2 (en) * | 1982-04-28 | 1993-07-14 | Tosoh Corp |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5746055B2 (en) | 1982-10-01 |
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