JPS5618440A - Measuring method for precision film thickness of silicon thin film grown on sapphire substrate - Google Patents

Measuring method for precision film thickness of silicon thin film grown on sapphire substrate

Info

Publication number
JPS5618440A
JPS5618440A JP9338779A JP9338779A JPS5618440A JP S5618440 A JPS5618440 A JP S5618440A JP 9338779 A JP9338779 A JP 9338779A JP 9338779 A JP9338779 A JP 9338779A JP S5618440 A JPS5618440 A JP S5618440A
Authority
JP
Japan
Prior art keywords
ray
measuring
film thickness
transmission
indicates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9338779A
Other languages
Japanese (ja)
Inventor
Koji Egami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9338779A priority Critical patent/JPS5618440A/en
Publication of JPS5618440A publication Critical patent/JPS5618440A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To obtain the precision film thicknesses from the maximum value to the minimum value by a method wherein a ray of a specific wave region is projected and transmitted through the sample to be measured when measuring a film thickness with a transmission type infrared ray spectrometer and an interference spectrum is obtained. CONSTITUTION:The spectrometer consists of a reference ray measuring section A, for direct measurement of an incident ray intensity, and a sample measuring section B, for measuring a transmission ray intensity from a sample to be measured, which is placed at right angle against an incident ray. The transmission type infrared ray spectrometer of two-beam method is used. A ray emitted from a ray source 1 is let to measuring sections A and B reflection plates 2 and 3 and signals coming from detectors 5 and 6 are recorded at recorder 8 through an amplifier 7. Using a ray of wave number range 6000-2000cm<-1> as an incident ray, the interference is obtained for a direct transmission ray 14 and an interfacial reflecting transmission ray 15 and a precision film thickness is obtained by having an N/2nk in the case of the maximum value and a (2N+1)/ 4nk (''n'' indicates an Si refractive index, ''k'' indicates a wave number and ''N'' indicates an order) in the case of the minimum value.
JP9338779A 1979-07-23 1979-07-23 Measuring method for precision film thickness of silicon thin film grown on sapphire substrate Pending JPS5618440A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9338779A JPS5618440A (en) 1979-07-23 1979-07-23 Measuring method for precision film thickness of silicon thin film grown on sapphire substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9338779A JPS5618440A (en) 1979-07-23 1979-07-23 Measuring method for precision film thickness of silicon thin film grown on sapphire substrate

Publications (1)

Publication Number Publication Date
JPS5618440A true JPS5618440A (en) 1981-02-21

Family

ID=14080893

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9338779A Pending JPS5618440A (en) 1979-07-23 1979-07-23 Measuring method for precision film thickness of silicon thin film grown on sapphire substrate

Country Status (1)

Country Link
JP (1) JPS5618440A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186322A (en) * 1981-05-11 1982-11-16 Mitsubishi Electric Corp Thin film forming device
JPH04247637A (en) * 1991-02-04 1992-09-03 Nichia Chem Ind Ltd Method of measuring surface condition of semiconductor crystal film
WO2003023844A1 (en) * 2001-09-10 2003-03-20 Matsushita Electric Industrial Co., Ltd. Film evaluating method, temperature measuring method, and semiconductor device manufacturing method
KR20210156199A (en) * 2020-06-17 2021-12-24 도쿄엘렉트론가부시키가이샤 Film forming method and film forming apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57186322A (en) * 1981-05-11 1982-11-16 Mitsubishi Electric Corp Thin film forming device
JPH04247637A (en) * 1991-02-04 1992-09-03 Nichia Chem Ind Ltd Method of measuring surface condition of semiconductor crystal film
WO2003023844A1 (en) * 2001-09-10 2003-03-20 Matsushita Electric Industrial Co., Ltd. Film evaluating method, temperature measuring method, and semiconductor device manufacturing method
US6994750B2 (en) 2001-09-10 2006-02-07 Matsushita Electric Industrial Co., Ltd. Film evaluating method, temperature measuring method, and semiconductor device manufacturing method
KR20210156199A (en) * 2020-06-17 2021-12-24 도쿄엘렉트론가부시키가이샤 Film forming method and film forming apparatus

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