JPS56165350A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS56165350A
JPS56165350A JP6895480A JP6895480A JPS56165350A JP S56165350 A JPS56165350 A JP S56165350A JP 6895480 A JP6895480 A JP 6895480A JP 6895480 A JP6895480 A JP 6895480A JP S56165350 A JPS56165350 A JP S56165350A
Authority
JP
Japan
Prior art keywords
gate
type
jfet
mosfet
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6895480A
Other languages
Japanese (ja)
Inventor
Shuichi Shimizu
Shigeo Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6895480A priority Critical patent/JPS56165350A/en
Publication of JPS56165350A publication Critical patent/JPS56165350A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To obtain a cascade connected FET, noises therefrom are low and which has high breakdown voltage, by a method wherein an MOSFET and a JFET are mounted which are formed on a semiconductor substrate and are connected in series, and input signals are given to a gate of the JEFT. CONSTITUTION:An n channel JFETQ1 is made up on an n type well 2 of a p<-> type Si substrate 1. A p<+> type diffusion gate is presented by 3 while, 4, 5 each contact section of n<+> type diffusion source and drain, 6 a surface insulating film and 7, 8 gate and source electrodes. An n channel MOSFETQ2 is built up on the surface of the p<-> type substrate to which the well is not formed. The source electrode 8 at the JFET side and a gate electrode 12 at the MOSFET side are connected by wiring 13. A source electrode 9 at the MOS side is connected to the drain electrode 5 at the J side. Thus, a low noise characteristic is obtained by the JFET and a high dielectric resisting characteristic by the MOSFET.
JP6895480A 1980-05-26 1980-05-26 Semiconductor device and manufacture thereof Pending JPS56165350A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6895480A JPS56165350A (en) 1980-05-26 1980-05-26 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6895480A JPS56165350A (en) 1980-05-26 1980-05-26 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56165350A true JPS56165350A (en) 1981-12-18

Family

ID=13388565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6895480A Pending JPS56165350A (en) 1980-05-26 1980-05-26 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56165350A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008186925A (en) * 2007-01-29 2008-08-14 Fuji Electric Device Technology Co Ltd Insulated gate silicon carbide semiconductor device and manufacturing method thereof
JP2011512042A (en) * 2008-02-13 2011-04-14 アコ セミコンダクター インコーポレーテッド Double gate semiconductor device with high breakdown voltage
WO2013021721A1 (en) * 2011-08-05 2013-02-14 住友電気工業株式会社 Silicon carbide semiconductor device
US8731485B2 (en) 2010-04-30 2014-05-20 Acco Semiconductor, Inc. RF switches
US8785987B2 (en) 2005-10-12 2014-07-22 Acco IGFET device having an RF capability
US9240402B2 (en) 2008-02-13 2016-01-19 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8785987B2 (en) 2005-10-12 2014-07-22 Acco IGFET device having an RF capability
JP2008186925A (en) * 2007-01-29 2008-08-14 Fuji Electric Device Technology Co Ltd Insulated gate silicon carbide semiconductor device and manufacturing method thereof
JP2011512042A (en) * 2008-02-13 2011-04-14 アコ セミコンダクター インコーポレーテッド Double gate semiconductor device with high breakdown voltage
US9240402B2 (en) 2008-02-13 2016-01-19 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US8731485B2 (en) 2010-04-30 2014-05-20 Acco Semiconductor, Inc. RF switches
WO2013021721A1 (en) * 2011-08-05 2013-02-14 住友電気工業株式会社 Silicon carbide semiconductor device
JP2013038149A (en) * 2011-08-05 2013-02-21 Sumitomo Electric Ind Ltd Silicon carbide semiconductor device
US8766278B2 (en) 2011-08-05 2014-07-01 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device

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