JPS56152247A - Testing method for semiconductor device - Google Patents

Testing method for semiconductor device

Info

Publication number
JPS56152247A
JPS56152247A JP5606480A JP5606480A JPS56152247A JP S56152247 A JPS56152247 A JP S56152247A JP 5606480 A JP5606480 A JP 5606480A JP 5606480 A JP5606480 A JP 5606480A JP S56152247 A JPS56152247 A JP S56152247A
Authority
JP
Japan
Prior art keywords
pinhole
surface protective
protective insulating
insulating film
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5606480A
Other languages
Japanese (ja)
Other versions
JPS6057225B2 (en
Inventor
Kenichi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5606480A priority Critical patent/JPS6057225B2/en
Publication of JPS56152247A publication Critical patent/JPS56152247A/en
Publication of JPS6057225B2 publication Critical patent/JPS6057225B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To enable the detection of the defect of a surface protective insulating film being regarded as the etched locus of metallic electrode or metallic wires of a semiconductor element by immersing the element on which the surface protective insulating film is formed in a metallic etchant. CONSTITUTION:An oxidized film 2a, an aluminum wire 3b and a phosphorus glass film 2c to become a surface protective insulating film are sequentially formed on a silicon substrate 1 on which a transistor or the like is formed in a semiconductor device, the device is then dipped in an aluminum etchant. When a defect such as pinhole 4 or the like exists on the film 2c, the etchant is introduced into the pinhole, resulting in the etching of the wire 3b. When it is etched for a predetermined period of time, the wire 3b is sidewisely etched only at the periphery of the pinhole 4 and the pinhole 4 is expanded as an etching locus 5. Since the locus 5 thus expanded can be simply detected by an ordinary optical microscope, the defect of the surface protective insulating film can be readily inspected.
JP5606480A 1980-04-26 1980-04-26 Testing method for semiconductor devices Expired - Lifetime JPS6057225B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5606480A JPS6057225B2 (en) 1980-04-26 1980-04-26 Testing method for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5606480A JPS6057225B2 (en) 1980-04-26 1980-04-26 Testing method for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS56152247A true JPS56152247A (en) 1981-11-25
JPS6057225B2 JPS6057225B2 (en) 1985-12-13

Family

ID=13016645

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5606480A Expired - Lifetime JPS6057225B2 (en) 1980-04-26 1980-04-26 Testing method for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS6057225B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100607408B1 (en) 2004-07-21 2006-08-02 삼성전자주식회사 Method of appraising of confidence a semiconductor wafer
JP2009294044A (en) * 2008-06-04 2009-12-17 Fuji Electric Device Technology Co Ltd Method for manufacturing semiconductor device
US8238100B2 (en) 2009-12-25 2012-08-07 Kabushiki Kaisha Toshiba Centrifugal fan and electronic apparatus
JP2016514372A (en) * 2013-03-12 2016-05-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Pinhole evaluation method of dielectric film for metal oxide semiconductor TFT

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100607408B1 (en) 2004-07-21 2006-08-02 삼성전자주식회사 Method of appraising of confidence a semiconductor wafer
JP2009294044A (en) * 2008-06-04 2009-12-17 Fuji Electric Device Technology Co Ltd Method for manufacturing semiconductor device
US8238100B2 (en) 2009-12-25 2012-08-07 Kabushiki Kaisha Toshiba Centrifugal fan and electronic apparatus
JP2016514372A (en) * 2013-03-12 2016-05-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Pinhole evaluation method of dielectric film for metal oxide semiconductor TFT

Also Published As

Publication number Publication date
JPS6057225B2 (en) 1985-12-13

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