JPS56114199A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
JPS56114199A
JPS56114199A JP1636680A JP1636680A JPS56114199A JP S56114199 A JPS56114199 A JP S56114199A JP 1636680 A JP1636680 A JP 1636680A JP 1636680 A JP1636680 A JP 1636680A JP S56114199 A JPS56114199 A JP S56114199A
Authority
JP
Japan
Prior art keywords
writing
data
nonvolatile semiconductor
semiconductor memory
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1636680A
Other languages
Japanese (ja)
Inventor
Soichi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1636680A priority Critical patent/JPS56114199A/en
Publication of JPS56114199A publication Critical patent/JPS56114199A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM

Abstract

PURPOSE:To enable writing of memories manufactured under various manufacture conditions, by varying an amplitude voltage and a pulse width of a writing pulse of a nonvolatile semiconductor memory. CONSTITUTION:In data memory 2, data to be stored in nonvolatile semiconductor memory 1 are held. Addresses used to write and read nonvolatile semiconductor memory 1 and data memory 2 are sent from address counter 3 to respective memories. The contents of data memory 2 and output data of memory 1 stored with data are compared mutually by comparing circuit 4, whose results are inputted to variable writing circuit 5 corresponding to respective addresses. When the comparison results show identity with regards to all addresses, the writing operation is completed. If the identity can not be obtained, the amplitude or width of writing pulses is varied and the writing operation is performed again. Then, this operation is repeated until the identity is obtained.
JP1636680A 1980-02-13 1980-02-13 Nonvolatile semiconductor memory device Pending JPS56114199A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1636680A JPS56114199A (en) 1980-02-13 1980-02-13 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1636680A JPS56114199A (en) 1980-02-13 1980-02-13 Nonvolatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS56114199A true JPS56114199A (en) 1981-09-08

Family

ID=11914313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1636680A Pending JPS56114199A (en) 1980-02-13 1980-02-13 Nonvolatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56114199A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62223895A (en) * 1986-03-25 1987-10-01 Nec Corp Semiconductor device
JPS62229597A (en) * 1986-01-09 1987-10-08 テキサス　インスツルメンツ　インコ−ポレイテツド Eeprom memory with long life
JPH01243164A (en) * 1988-03-24 1989-09-27 Nec Yamaguchi Ltd Single chip microcomputer incorporated with eprom
US5579260A (en) * 1993-08-27 1996-11-26 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US5592429A (en) * 1994-10-28 1997-01-07 Nec Corporation Compact semiconductor memory device capable of preventing incomplete writing and erasing
US6243321B1 (en) 1991-02-08 2001-06-05 Btg Int Inc Electrically alterable non-volatile memory with n-bits per cell

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229597A (en) * 1986-01-09 1987-10-08 テキサス　インスツルメンツ　インコ−ポレイテツド Eeprom memory with long life
JPS62223895A (en) * 1986-03-25 1987-10-01 Nec Corp Semiconductor device
JPH01243164A (en) * 1988-03-24 1989-09-27 Nec Yamaguchi Ltd Single chip microcomputer incorporated with eprom
US6339545B2 (en) 1991-02-08 2002-01-15 Btg International Inc. Electrically alterable non-volatile memory with n-bits per cell
US6243321B1 (en) 1991-02-08 2001-06-05 Btg Int Inc Electrically alterable non-volatile memory with n-bits per cell
US6324121B2 (en) 1991-02-08 2001-11-27 Btg International Inc. Electrically alterable non-volatile memory with n-bits per cell
US6327189B2 (en) 1991-02-08 2001-12-04 Btg International Inc. Electrically alterable non-volatile memory with n-bits per cell
US6344998B2 (en) 1991-02-08 2002-02-05 Btg International Inc. Electrically alterable non-volatile memory with N-Bits per cell
US6356486B1 (en) 1991-02-08 2002-03-12 Btg International Inc. Electrically alterable non-volatile memory with n-bits per cell
US6404675B2 (en) 1991-02-08 2002-06-11 Btg International Inc. Electrically alterable non-volatile memory with n-bits per cell
US5923588A (en) * 1993-08-27 1999-07-13 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device with a plurality of programming voltage levels
US5579260A (en) * 1993-08-27 1996-11-26 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US5592429A (en) * 1994-10-28 1997-01-07 Nec Corporation Compact semiconductor memory device capable of preventing incomplete writing and erasing

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