JPS5610977A - Manufacture of photoelectric converter - Google Patents

Manufacture of photoelectric converter

Info

Publication number
JPS5610977A
JPS5610977A JP8593979A JP8593979A JPS5610977A JP S5610977 A JPS5610977 A JP S5610977A JP 8593979 A JP8593979 A JP 8593979A JP 8593979 A JP8593979 A JP 8593979A JP S5610977 A JPS5610977 A JP S5610977A
Authority
JP
Japan
Prior art keywords
electrode
receiving surface
light receiving
slope
photoelectric converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8593979A
Other languages
Japanese (ja)
Other versions
JPS5751987B2 (en
Inventor
Kesao Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP8593979A priority Critical patent/JPS5610977A/en
Publication of JPS5610977A publication Critical patent/JPS5610977A/en
Publication of JPS5751987B2 publication Critical patent/JPS5751987B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To irradiate and utilize the reflected light of an ohmic electrode area to the effective light receiving surface of the photoelectric converter by forming the cross sectional shape of the electrode at the light receiving surface side in a raised shape having a slope with respect to the light receiving surface. CONSTITUTION:A gap 44 is formed between the specimen 41 of a solar battery and evaporated masks 42. The opening 43 of the mask 42 is narrower than the desired pattern. When an evaporating metal source is disposed directly above to evaporate the metal 45, an electrode 46 becomes in raised shape. When the gap is reduced, the slope of the raised portion becomes steep. The electrode 46 is formed by evaporating white silver on Ti. Since the high reflection factor electrode is formed with a slope according to this configuration, solar light 51 incident to the surface 54 of the electrode partly becomes reflected light 57, which reirradiates the effective light receiving surface at a reflecting angle 56 and an effective light receiving surface incident angle 58. Inasmuch as the surface 52 receives a direct incident light 51 and the reflected light 57, it increases a photocurrent so as to improve the conversion efficiency of the photoelectric converter.
JP8593979A 1979-07-09 1979-07-09 Manufacture of photoelectric converter Granted JPS5610977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8593979A JPS5610977A (en) 1979-07-09 1979-07-09 Manufacture of photoelectric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8593979A JPS5610977A (en) 1979-07-09 1979-07-09 Manufacture of photoelectric converter

Publications (2)

Publication Number Publication Date
JPS5610977A true JPS5610977A (en) 1981-02-03
JPS5751987B2 JPS5751987B2 (en) 1982-11-05

Family

ID=13872720

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8593979A Granted JPS5610977A (en) 1979-07-09 1979-07-09 Manufacture of photoelectric converter

Country Status (1)

Country Link
JP (1) JPS5610977A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006060104A (en) * 2004-08-23 2006-03-02 Sony Corp Photoelectric conversion element and its manufacturing method
JP2008218467A (en) * 2007-02-28 2008-09-18 Toyota Motor Corp Photoelectric conversion element
JP2009246108A (en) * 2008-03-31 2009-10-22 Sanyo Electric Co Ltd Solar cell module
JP2010225977A (en) * 2009-03-25 2010-10-07 Mitsubishi Electric Corp Solar battery module
CN101944551A (en) * 2010-07-28 2011-01-12 河北东旭投资集团有限公司 Method for improving light transmittance of thin film solar cell
JP2012033564A (en) * 2010-07-28 2012-02-16 Mitsubishi Electric Corp Solar cell and method for manufacturing the same
WO2013014973A1 (en) * 2011-07-28 2013-01-31 三洋電機株式会社 Solar cell, solar cell module, and method for producing solar cell
WO2013046324A1 (en) * 2011-09-27 2013-04-04 三洋電機株式会社 Solar cell and solar cell module
CN103208540A (en) * 2013-04-17 2013-07-17 新疆嘉盛阳光风电科技股份有限公司 Electrode for photovoltaic cell and manufacturing method for electrode
US8971675B2 (en) 2006-01-13 2015-03-03 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US9110289B2 (en) 1998-04-08 2015-08-18 Qualcomm Mems Technologies, Inc. Device for modulating light with multiple electrodes
US9121979B2 (en) 2009-05-29 2015-09-01 Qualcomm Mems Technologies, Inc. Illumination devices and methods of fabrication thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130492U (en) * 1984-02-13 1985-08-31 カルソニックカンセイ株式会社 display device

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9110289B2 (en) 1998-04-08 2015-08-18 Qualcomm Mems Technologies, Inc. Device for modulating light with multiple electrodes
JP2006060104A (en) * 2004-08-23 2006-03-02 Sony Corp Photoelectric conversion element and its manufacturing method
US8971675B2 (en) 2006-01-13 2015-03-03 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
JP2008218467A (en) * 2007-02-28 2008-09-18 Toyota Motor Corp Photoelectric conversion element
JP2009246108A (en) * 2008-03-31 2009-10-22 Sanyo Electric Co Ltd Solar cell module
JP2010225977A (en) * 2009-03-25 2010-10-07 Mitsubishi Electric Corp Solar battery module
US9121979B2 (en) 2009-05-29 2015-09-01 Qualcomm Mems Technologies, Inc. Illumination devices and methods of fabrication thereof
CN101944551A (en) * 2010-07-28 2011-01-12 河北东旭投资集团有限公司 Method for improving light transmittance of thin film solar cell
JP2012033564A (en) * 2010-07-28 2012-02-16 Mitsubishi Electric Corp Solar cell and method for manufacturing the same
WO2013014973A1 (en) * 2011-07-28 2013-01-31 三洋電機株式会社 Solar cell, solar cell module, and method for producing solar cell
CN103733348A (en) * 2011-07-28 2014-04-16 三洋电机株式会社 Solar cell, solar cell module, and method for producing solar cell
JP2013030601A (en) * 2011-07-28 2013-02-07 Sanyo Electric Co Ltd Solar cell, solar cell module, and manufacturing method of solar cell
CN103733348B (en) * 2011-07-28 2017-03-29 松下知识产权经营株式会社 Solaode, solar module, the manufacture method of solaode
WO2013046324A1 (en) * 2011-09-27 2013-04-04 三洋電機株式会社 Solar cell and solar cell module
CN103208540A (en) * 2013-04-17 2013-07-17 新疆嘉盛阳光风电科技股份有限公司 Electrode for photovoltaic cell and manufacturing method for electrode

Also Published As

Publication number Publication date
JPS5751987B2 (en) 1982-11-05

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