JPS56104462A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS56104462A
JPS56104462A JP751980A JP751980A JPS56104462A JP S56104462 A JPS56104462 A JP S56104462A JP 751980 A JP751980 A JP 751980A JP 751980 A JP751980 A JP 751980A JP S56104462 A JPS56104462 A JP S56104462A
Authority
JP
Japan
Prior art keywords
polysilicon layer
oxide film
digit line
substrate
occupying area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP751980A
Other languages
Japanese (ja)
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP751980A priority Critical patent/JPS56104462A/en
Priority to EP84114160A priority patent/EP0154685B1/en
Priority to DE8181100424T priority patent/DE3173413D1/en
Priority to EP81100424A priority patent/EP0033130B1/en
Priority to DE8484114160T priority patent/DE3177173D1/en
Priority to US06/227,936 priority patent/US4419682A/en
Publication of JPS56104462A publication Critical patent/JPS56104462A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To decrease the occupying area per bit in the semiconductor memory device by reducing the capacity of a digit line and decreasing the area of the occupying area of the digit line with a multilayer wire. CONSTITUTION:A field inversion preventing P<+> type region 12 and an N type region 13 are formed on a P type semiconductor substrate 11. The first polysilicon layer 15 is formed through a thin oxide film 14 on the substrate 11, and the first polysilicon layer 15 is used as the one electrode of a memory cell capacity. The second polysilicon layer 16 is alternately formed through the surface of the substrate 11 and a thick oxide film 17 as a digit line and an address selecting transistor drain. The third polysilicon layer 19 is formed via an oxide film 20 between the first polysilicon layer 15 and the second polysilicon 16 as an address selecting MOSFET gate electrode. Thus, the memory cell having smaller occupying area per bit can be carried out, and the integration of the device can be increased.
JP751980A 1980-01-25 1980-01-25 Semiconductor memory device Pending JPS56104462A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP751980A JPS56104462A (en) 1980-01-25 1980-01-25 Semiconductor memory device
EP84114160A EP0154685B1 (en) 1980-01-25 1981-01-21 Semiconductor memory device
DE8181100424T DE3173413D1 (en) 1980-01-25 1981-01-21 Semiconductor memory device
EP81100424A EP0033130B1 (en) 1980-01-25 1981-01-21 Semiconductor memory device
DE8484114160T DE3177173D1 (en) 1980-01-25 1981-01-21 SEMICONDUCTOR STORAGE DEVICE.
US06/227,936 US4419682A (en) 1980-01-25 1981-01-23 Three level poly dynamic ram with poly bit lines

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP751980A JPS56104462A (en) 1980-01-25 1980-01-25 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS56104462A true JPS56104462A (en) 1981-08-20

Family

ID=11668015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP751980A Pending JPS56104462A (en) 1980-01-25 1980-01-25 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS56104462A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5783049A (en) * 1980-09-02 1982-05-24 Intel Corp Mos dynamic memory cell and method of producing same
CN111430329A (en) * 2020-04-23 2020-07-17 合肥晶合集成电路有限公司 Capacitive semiconductor element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5783049A (en) * 1980-09-02 1982-05-24 Intel Corp Mos dynamic memory cell and method of producing same
JPH0318353B2 (en) * 1980-09-02 1991-03-12 Intel Corp
CN111430329A (en) * 2020-04-23 2020-07-17 合肥晶合集成电路有限公司 Capacitive semiconductor element
CN111430329B (en) * 2020-04-23 2021-07-27 合肥晶合集成电路股份有限公司 Capacitive semiconductor element

Similar Documents

Publication Publication Date Title
GB1315230A (en) Insulated gate field effect memory transistor
JPS55156371A (en) Non-volatile semiconductor memory device
KR880011929A (en) Semiconductor memory
JPS56104462A (en) Semiconductor memory device
JPS53112687A (en) Semiconductor device
JPS6433961A (en) Mos composite memory device
JPS5660052A (en) Semiconductor memory device
JPS57104264A (en) Semiconductor memory cell
JPS56150857A (en) Dynamic memory device
JPS55102274A (en) Insulated gate field effect transistor
JPS6425465A (en) Semiconductor storage device
JPS6425461A (en) Semiconductor memory cell and manufacture thereof
JPS57162371A (en) Mos semiconductor memory device
JPS6437058A (en) Insulated-gate field-effect transistor
KR910001765A (en) Nonvolatile memory device
JPS5762556A (en) Semiconductor device
JPS56142674A (en) Semiconductor memory device
JPS56104461A (en) Semiconductor memory device
JPS57206068A (en) Semiconductor memory device
JPS57210658A (en) Semiconductor memory
JPS566464A (en) Semiconductor device and manufacture thereof
JPS5621358A (en) Semiconductor memory device
JPS5521170A (en) Semiconductor memory
JPS6428950A (en) Semiconductor storage device and manufacture thereof
JPS56105666A (en) Semiconductor memory device