JPS5580893A - Memory device - Google Patents

Memory device

Info

Publication number
JPS5580893A
JPS5580893A JP14883078A JP14883078A JPS5580893A JP S5580893 A JPS5580893 A JP S5580893A JP 14883078 A JP14883078 A JP 14883078A JP 14883078 A JP14883078 A JP 14883078A JP S5580893 A JPS5580893 A JP S5580893A
Authority
JP
Japan
Prior art keywords
bit
data
region
inversion
steady
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14883078A
Other languages
Japanese (ja)
Inventor
Taiji Nosaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14883078A priority Critical patent/JPS5580893A/en
Publication of JPS5580893A publication Critical patent/JPS5580893A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To remedy the steady fault of the memory element in a simple and economical way by giving inversion to each bit of the data read out when the inverse display bit of the data region is on and at the reading time, thus increasing the efficiency for operation of the computer.
CONSTITUTION: Inverse display bit 11 is provided every inversion circuit of the data and data reion 12, and each bit value of the data is written after inversion into region 12 which is incapable of the steady writing. At the same time, inverse display bit 11 of region 12 is turned on previously, and then each bit of the reading data is inverted if bit 11 is on at the reading time. As a result, the steady fault can be remedied for the memory element in a simple and economical way, thus ensuring a high-efficiency operation for the computer.
COPYRIGHT: (C)1980,JPO&Japio
JP14883078A 1978-12-01 1978-12-01 Memory device Pending JPS5580893A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14883078A JPS5580893A (en) 1978-12-01 1978-12-01 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14883078A JPS5580893A (en) 1978-12-01 1978-12-01 Memory device

Publications (1)

Publication Number Publication Date
JPS5580893A true JPS5580893A (en) 1980-06-18

Family

ID=15461673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14883078A Pending JPS5580893A (en) 1978-12-01 1978-12-01 Memory device

Country Status (1)

Country Link
JP (1) JPS5580893A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010009101A (en) * 2008-06-24 2010-01-14 Toshiba Corp Memory system and memory access method
WO2011030410A1 (en) * 2009-09-09 2011-03-17 株式会社 東芝 Memory device
JP2012074094A (en) * 2010-09-28 2012-04-12 Citizen Holdings Co Ltd Nonvolatile semiconductor memory device
JP2013191227A (en) * 2013-05-27 2013-09-26 Toshiba Corp Memory access device
JP2015046210A (en) * 2013-08-29 2015-03-12 富士通セミコンダクター株式会社 Semiconductor storage device and semiconductor storage device writing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010009101A (en) * 2008-06-24 2010-01-14 Toshiba Corp Memory system and memory access method
WO2011030410A1 (en) * 2009-09-09 2011-03-17 株式会社 東芝 Memory device
US9075742B2 (en) 2009-09-09 2015-07-07 Kabushiki Kaisha Toshiba Memory device
JP2012074094A (en) * 2010-09-28 2012-04-12 Citizen Holdings Co Ltd Nonvolatile semiconductor memory device
JP2013191227A (en) * 2013-05-27 2013-09-26 Toshiba Corp Memory access device
JP2015046210A (en) * 2013-08-29 2015-03-12 富士通セミコンダクター株式会社 Semiconductor storage device and semiconductor storage device writing method

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