JPS5570072A - Semiconductor read only memory - Google Patents

Semiconductor read only memory

Info

Publication number
JPS5570072A
JPS5570072A JP14279278A JP14279278A JPS5570072A JP S5570072 A JPS5570072 A JP S5570072A JP 14279278 A JP14279278 A JP 14279278A JP 14279278 A JP14279278 A JP 14279278A JP S5570072 A JPS5570072 A JP S5570072A
Authority
JP
Japan
Prior art keywords
writing
gate electrode
customers
rom
injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14279278A
Other languages
Japanese (ja)
Inventor
Kunikazu Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP14279278A priority Critical patent/JPS5570072A/en
Publication of JPS5570072A publication Critical patent/JPS5570072A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To shorten the time of turn-around until this device is offerred to customers, by forming this memory cell so that writing be performed after a process of manufacture of the cell is completed.
CONSTITUTION: A resist film is used as a mask in order to make up an impurity layer 5', but the impurities themselves are injected through a gate electrode 6'. Thus, when a ROM is kept in custody under a condition that the ROM is finished before writing and orders are accepted from customers, writing by the injection of impurities is carried out, and assembly can instantaneously be started. Writing by the injection of ions is facilitated through the gate electrode by thinning the gate electrode in a very large scale integration.
COPYRIGHT: (C)1980,JPO&Japio
JP14279278A 1978-11-21 1978-11-21 Semiconductor read only memory Pending JPS5570072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14279278A JPS5570072A (en) 1978-11-21 1978-11-21 Semiconductor read only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14279278A JPS5570072A (en) 1978-11-21 1978-11-21 Semiconductor read only memory

Publications (1)

Publication Number Publication Date
JPS5570072A true JPS5570072A (en) 1980-05-27

Family

ID=15323710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14279278A Pending JPS5570072A (en) 1978-11-21 1978-11-21 Semiconductor read only memory

Country Status (1)

Country Link
JP (1) JPS5570072A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583265A (en) * 1981-06-30 1983-01-10 Toshiba Corp Manufacture of semiconductor device
JPS5821369A (en) * 1981-07-30 1983-02-08 Toshiba Corp Fixed memory storage
JPS6285462A (en) * 1985-07-29 1987-04-18 エスジーエス―トムソン　マイクロエレクトロニクス　インク． Programming of rom
JPS62125664A (en) * 1985-11-26 1987-06-06 Rohm Co Ltd Manufacture of semiconductor device
JPS62140459A (en) * 1985-12-12 1987-06-24 エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア Method of programming read-only memory by ion implantation and nmos read-only memory obtained by the method
JPS62224962A (en) * 1986-03-26 1987-10-02 Mitsubishi Electric Corp Semiconductor device
US5556800A (en) * 1992-04-03 1996-09-17 Kabushiki Kaisha Toshiba Method of manufacturing a mask read only memory (ROM) for storing multi-value data

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333076A (en) * 1976-09-09 1978-03-28 Toshiba Corp Production of mos type integrated circuit
JPS5375781A (en) * 1976-12-14 1978-07-05 Standard Microsyst Smc Method of producing mos semiconductor circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5333076A (en) * 1976-09-09 1978-03-28 Toshiba Corp Production of mos type integrated circuit
JPS5375781A (en) * 1976-12-14 1978-07-05 Standard Microsyst Smc Method of producing mos semiconductor circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583265A (en) * 1981-06-30 1983-01-10 Toshiba Corp Manufacture of semiconductor device
JPS5821369A (en) * 1981-07-30 1983-02-08 Toshiba Corp Fixed memory storage
JPS6285462A (en) * 1985-07-29 1987-04-18 エスジーエス―トムソン　マイクロエレクトロニクス　インク． Programming of rom
JPS62125664A (en) * 1985-11-26 1987-06-06 Rohm Co Ltd Manufacture of semiconductor device
JPS62140459A (en) * 1985-12-12 1987-06-24 エツセ・ジ・エツセ・ミクロエレツトロニ−カ・エツセ・ピ・ア Method of programming read-only memory by ion implantation and nmos read-only memory obtained by the method
JPS62224962A (en) * 1986-03-26 1987-10-02 Mitsubishi Electric Corp Semiconductor device
US5556800A (en) * 1992-04-03 1996-09-17 Kabushiki Kaisha Toshiba Method of manufacturing a mask read only memory (ROM) for storing multi-value data

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