JPS5520282A - Vapor phase growing method for crystal - Google Patents
Vapor phase growing method for crystalInfo
- Publication number
- JPS5520282A JPS5520282A JP9424778A JP9424778A JPS5520282A JP S5520282 A JPS5520282 A JP S5520282A JP 9424778 A JP9424778 A JP 9424778A JP 9424778 A JP9424778 A JP 9424778A JP S5520282 A JPS5520282 A JP S5520282A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- substrate
- arsenic
- grow
- dilution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prevent deterioration of a crystal surface and to enhance product yield by setting a substrate and exhaust ports at the upper part of a vertical type reaction tube and by spraying gas for crystal growth from the lower part to grow a crystal.
CONSTITUTION: Gallium (Ga) arsenic substrate 8 and exhaust ports 19 are set at the upper part of vertical type reaction tube 1. Arsenic trichloride-contg. hydrogen gas and hydrogen gas for dilution are introduced into tube 1 from introduction holes 12 and 13 of bottom cover 10, respectively, and the gases are reacted with a Ga source in container 5 heated to 850°C with heater 11, forming arsenic and Ga chloride. These products are uniformly mixed with hydrogen for dilution in mixer 6 to grow a Ga arsenic crystal on substrate 8 attached holder 7. The gas flow direction is reverse to that of a conventional method, and an exceptionally flat crystal is grown on substrate 8 without dropping crystal grains, etc. on substrate 8.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9424778A JPS5520282A (en) | 1978-08-01 | 1978-08-01 | Vapor phase growing method for crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9424778A JPS5520282A (en) | 1978-08-01 | 1978-08-01 | Vapor phase growing method for crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5520282A true JPS5520282A (en) | 1980-02-13 |
Family
ID=14104966
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9424778A Pending JPS5520282A (en) | 1978-08-01 | 1978-08-01 | Vapor phase growing method for crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5520282A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5746340A (en) * | 1980-09-04 | 1982-03-16 | Hitachi Ltd | Magnetic picture recorder and reproducer |
US6076852A (en) * | 1997-08-05 | 2000-06-20 | Trw Vehicle Safety Systems Inc. | Inflatable restraint inflator with flow control valve |
-
1978
- 1978-08-01 JP JP9424778A patent/JPS5520282A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5746340A (en) * | 1980-09-04 | 1982-03-16 | Hitachi Ltd | Magnetic picture recorder and reproducer |
US6076852A (en) * | 1997-08-05 | 2000-06-20 | Trw Vehicle Safety Systems Inc. | Inflatable restraint inflator with flow control valve |
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