JPS5520282A - Vapor phase growing method for crystal - Google Patents

Vapor phase growing method for crystal

Info

Publication number
JPS5520282A
JPS5520282A JP9424778A JP9424778A JPS5520282A JP S5520282 A JPS5520282 A JP S5520282A JP 9424778 A JP9424778 A JP 9424778A JP 9424778 A JP9424778 A JP 9424778A JP S5520282 A JPS5520282 A JP S5520282A
Authority
JP
Japan
Prior art keywords
crystal
substrate
arsenic
grow
dilution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9424778A
Other languages
Japanese (ja)
Inventor
Takaaki Muneta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9424778A priority Critical patent/JPS5520282A/en
Publication of JPS5520282A publication Critical patent/JPS5520282A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prevent deterioration of a crystal surface and to enhance product yield by setting a substrate and exhaust ports at the upper part of a vertical type reaction tube and by spraying gas for crystal growth from the lower part to grow a crystal.
CONSTITUTION: Gallium (Ga) arsenic substrate 8 and exhaust ports 19 are set at the upper part of vertical type reaction tube 1. Arsenic trichloride-contg. hydrogen gas and hydrogen gas for dilution are introduced into tube 1 from introduction holes 12 and 13 of bottom cover 10, respectively, and the gases are reacted with a Ga source in container 5 heated to 850°C with heater 11, forming arsenic and Ga chloride. These products are uniformly mixed with hydrogen for dilution in mixer 6 to grow a Ga arsenic crystal on substrate 8 attached holder 7. The gas flow direction is reverse to that of a conventional method, and an exceptionally flat crystal is grown on substrate 8 without dropping crystal grains, etc. on substrate 8.
COPYRIGHT: (C)1980,JPO&Japio
JP9424778A 1978-08-01 1978-08-01 Vapor phase growing method for crystal Pending JPS5520282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9424778A JPS5520282A (en) 1978-08-01 1978-08-01 Vapor phase growing method for crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9424778A JPS5520282A (en) 1978-08-01 1978-08-01 Vapor phase growing method for crystal

Publications (1)

Publication Number Publication Date
JPS5520282A true JPS5520282A (en) 1980-02-13

Family

ID=14104966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9424778A Pending JPS5520282A (en) 1978-08-01 1978-08-01 Vapor phase growing method for crystal

Country Status (1)

Country Link
JP (1) JPS5520282A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5746340A (en) * 1980-09-04 1982-03-16 Hitachi Ltd Magnetic picture recorder and reproducer
US6076852A (en) * 1997-08-05 2000-06-20 Trw Vehicle Safety Systems Inc. Inflatable restraint inflator with flow control valve

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5746340A (en) * 1980-09-04 1982-03-16 Hitachi Ltd Magnetic picture recorder and reproducer
US6076852A (en) * 1997-08-05 2000-06-20 Trw Vehicle Safety Systems Inc. Inflatable restraint inflator with flow control valve

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