JPS55157234A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55157234A
JPS55157234A JP6547079A JP6547079A JPS55157234A JP S55157234 A JPS55157234 A JP S55157234A JP 6547079 A JP6547079 A JP 6547079A JP 6547079 A JP6547079 A JP 6547079A JP S55157234 A JPS55157234 A JP S55157234A
Authority
JP
Japan
Prior art keywords
thin film
film
oxide
substance
aluminum thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6547079A
Other languages
Japanese (ja)
Inventor
Mitsuru Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP6547079A priority Critical patent/JPS55157234A/en
Publication of JPS55157234A publication Critical patent/JPS55157234A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

PURPOSE:To increase the plasma etching speed of oxide substance in a method of selectively etching a thin film by implanting ion to the entire surface of a thin film substance oxide layer formed on a thin film substance. CONSTITUTION:When a silicon oxide film 2 is formed on the surface of a silicon substrate 1 and aluminum thin film 3 is evaporated thereon, an oxide film 4 is natually formed in contact with air. Then, a photoresist pattern 5 is formed thereon, and ion 6 is implanted onto the surface of the oxide film 4 to weaken the binding strength with the film 4 so as to strengthen the binding strength with the pattern 5. Thereafter, the aluminum thin film 3 is etched with plasma gas 7 to isolate the photoresist mask 5 so as to wire the aluminum thin film 3'.
JP6547079A 1979-05-25 1979-05-25 Manufacture of semiconductor device Pending JPS55157234A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6547079A JPS55157234A (en) 1979-05-25 1979-05-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6547079A JPS55157234A (en) 1979-05-25 1979-05-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55157234A true JPS55157234A (en) 1980-12-06

Family

ID=13288026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6547079A Pending JPS55157234A (en) 1979-05-25 1979-05-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55157234A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4438556A (en) * 1981-01-12 1984-03-27 Tokyo Shibaura Denki Kabushiki Kaisha Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions
JPS6132428A (en) * 1984-07-24 1986-02-15 Mitsubishi Electric Corp Method for etching of complex structure
US4863556A (en) * 1985-09-30 1989-09-05 Siemens Aktiengesellschaft Method for transferring superfine photoresist structures
US5350484A (en) * 1992-09-08 1994-09-27 Intel Corporation Method for the anisotropic etching of metal films in the fabrication of interconnects
JP2006234859A (en) * 2005-02-22 2006-09-07 Casio Comput Co Ltd Liquid crystal element
JP2009231424A (en) * 2008-03-21 2009-10-08 Dainippon Printing Co Ltd Method of manufacturing semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5269576A (en) * 1975-12-04 1977-06-09 Siemens Ag Method of making specified bevel angle at edge of etching
JPS53125781A (en) * 1977-04-08 1978-11-02 Nec Corp Manufacture for semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5269576A (en) * 1975-12-04 1977-06-09 Siemens Ag Method of making specified bevel angle at edge of etching
JPS53125781A (en) * 1977-04-08 1978-11-02 Nec Corp Manufacture for semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4438556A (en) * 1981-01-12 1984-03-27 Tokyo Shibaura Denki Kabushiki Kaisha Method of forming doped polycrystalline silicon pattern by selective implantation and plasma etching of undoped regions
JPS6132428A (en) * 1984-07-24 1986-02-15 Mitsubishi Electric Corp Method for etching of complex structure
JPH0518458B2 (en) * 1984-07-24 1993-03-12 Mitsubishi Electric Corp
US4863556A (en) * 1985-09-30 1989-09-05 Siemens Aktiengesellschaft Method for transferring superfine photoresist structures
US5350484A (en) * 1992-09-08 1994-09-27 Intel Corporation Method for the anisotropic etching of metal films in the fabrication of interconnects
JP2006234859A (en) * 2005-02-22 2006-09-07 Casio Comput Co Ltd Liquid crystal element
JP2009231424A (en) * 2008-03-21 2009-10-08 Dainippon Printing Co Ltd Method of manufacturing semiconductor device

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