JPS55124232A - Application method of substrate treatment solution and the device therefor - Google Patents

Application method of substrate treatment solution and the device therefor

Info

Publication number
JPS55124232A
JPS55124232A JP3275379A JP3275379A JPS55124232A JP S55124232 A JPS55124232 A JP S55124232A JP 3275379 A JP3275379 A JP 3275379A JP 3275379 A JP3275379 A JP 3275379A JP S55124232 A JPS55124232 A JP S55124232A
Authority
JP
Japan
Prior art keywords
wafer
mentioned
gas
substrate treatment
treatment solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3275379A
Other languages
Japanese (ja)
Inventor
Yuichi Hirofuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3275379A priority Critical patent/JPS55124232A/en
Publication of JPS55124232A publication Critical patent/JPS55124232A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent a substrate treatment solution reaching the rear side of a wafer with a small amount of gas and without producing dust by flowing gas from the wafer center toward the wafer end in parallel with the other main surface of wafer. CONSTITUTION:A developing apparatus which has a gas supplying container 4 with a flat upper wall 6 having a hole section 8 and a wafer chuck 1, placed inside the hole section 8, which is provided at a uniform height from the upper wall 6, is used. The gas is flew out through the gap between the hole section 8 and the above-mentioned wafer chuck 1, and as it runs through the parallel gap 5 which consists of a wafer 2 supported by a wafer chuck 1 and the above-mentioned upper wall 6, it prevents the developing solution to reach the reverse side of the above- mentioned wafer. Such an application method of substrate treatment solution as above-mentioned is used not only to developing apparatus, but also to an apparatus which applies etching to grouping films using an etching solution on a wafer and an applying apparatus of a sensitive resin etc.
JP3275379A 1979-03-20 1979-03-20 Application method of substrate treatment solution and the device therefor Pending JPS55124232A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3275379A JPS55124232A (en) 1979-03-20 1979-03-20 Application method of substrate treatment solution and the device therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3275379A JPS55124232A (en) 1979-03-20 1979-03-20 Application method of substrate treatment solution and the device therefor

Publications (1)

Publication Number Publication Date
JPS55124232A true JPS55124232A (en) 1980-09-25

Family

ID=12367596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3275379A Pending JPS55124232A (en) 1979-03-20 1979-03-20 Application method of substrate treatment solution and the device therefor

Country Status (1)

Country Link
JP (1) JPS55124232A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS585342U (en) * 1981-06-30 1983-01-13 富士通株式会社 Wafer surface treatment equipment
JPS5849437U (en) * 1981-09-29 1983-04-04 富士通株式会社 Substrate surface treatment equipment
JPS6086837A (en) * 1983-10-19 1985-05-16 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0593569U (en) * 1992-05-15 1993-12-21 関東自動車工業株式会社 Coating equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149978A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Developing treatment method of photoresist film
JPS5337189A (en) * 1976-09-17 1978-04-06 Inoue Japax Res Inc Production of surfactant
JPS53110377A (en) * 1977-03-09 1978-09-27 Hitachi Ltd Wax coating device
JPS54113265A (en) * 1978-02-23 1979-09-04 Mitsubishi Electric Corp Resistor developing equipement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149978A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Developing treatment method of photoresist film
JPS5337189A (en) * 1976-09-17 1978-04-06 Inoue Japax Res Inc Production of surfactant
JPS53110377A (en) * 1977-03-09 1978-09-27 Hitachi Ltd Wax coating device
JPS54113265A (en) * 1978-02-23 1979-09-04 Mitsubishi Electric Corp Resistor developing equipement

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS585342U (en) * 1981-06-30 1983-01-13 富士通株式会社 Wafer surface treatment equipment
JPH0110924Y2 (en) * 1981-06-30 1989-03-29
JPS5849437U (en) * 1981-09-29 1983-04-04 富士通株式会社 Substrate surface treatment equipment
JPH0110925Y2 (en) * 1981-09-29 1989-03-29
JPS6086837A (en) * 1983-10-19 1985-05-16 Matsushita Electronics Corp Manufacture of semiconductor device
JPH0593569U (en) * 1992-05-15 1993-12-21 関東自動車工業株式会社 Coating equipment

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