JPS55107246A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55107246A JPS55107246A JP1374379A JP1374379A JPS55107246A JP S55107246 A JPS55107246 A JP S55107246A JP 1374379 A JP1374379 A JP 1374379A JP 1374379 A JP1374379 A JP 1374379A JP S55107246 A JPS55107246 A JP S55107246A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- wiring
- gas
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To provide an opening in a taper shape on a region including an Al wiring layer by a method wherein a SiN layer is formed by gradually reducing plasma power.
CONSTITUTION: An Al layer is provided on a Si substrate 11 wherein an element has been formed, and a flat Al wiring layer 13 whose periphery is filled with a porous alumina layer 12 through selective anodic oxidation. Next the substrate 11 is placed in the apparatus, while supplying it with, for instance, 75cc/min of a SiH4 gas, 300cc/min of NH3 and 0.6l/min of an Ar gas, and letting the substrate react in the plasma, so that the plasma power is successively reduced for the formation of a SiN film 14. The film formed by this method shows faster etching speed in a portion nearer to the surface. Followed by this process, if the SiN film 14 is provided with a resist mask, before being etched by a liquid of fluoric acid series, a through hole 15 with a cone-shaped taper is formed. Then if the Al wiring 16 is formed in the hole, disconnection of wire can be avoided.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1374379A JPS55107246A (en) | 1979-02-08 | 1979-02-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1374379A JPS55107246A (en) | 1979-02-08 | 1979-02-08 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55107246A true JPS55107246A (en) | 1980-08-16 |
Family
ID=11841734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1374379A Pending JPS55107246A (en) | 1979-02-08 | 1979-02-08 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55107246A (en) |
-
1979
- 1979-02-08 JP JP1374379A patent/JPS55107246A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5690525A (en) | Manufacture of semiconductor device | |
JPS5775429A (en) | Manufacture of semiconductor device | |
JPS54154272A (en) | Contact forming method for semiconductor device | |
JPS55107246A (en) | Manufacture of semiconductor device | |
JPS57130431A (en) | Manufacture of semiconductor device | |
JPS5772333A (en) | Manufacture of semiconductor device | |
JPS5591138A (en) | Die forming of semiconductor device | |
JPS6436024A (en) | Formation of wiring of semiconductor device | |
JPS5546587A (en) | Method of forming plasma growing film | |
JPS56111216A (en) | Preparation of semiconductor device | |
JPS56142652A (en) | Manufacture of semiconductor device | |
JPS559415A (en) | Semiconductor manufacturing method | |
JPS57124443A (en) | Forming method for electrode layer | |
JPS5797629A (en) | Manufacture of semiconductor device | |
JPS5732377A (en) | Etching method | |
JPS57155381A (en) | Wet etching method | |
JPS5522833A (en) | Manufacturing of semiconductor device | |
JPS571243A (en) | Manufacture of semiconductor device | |
JPS57100734A (en) | Etching method for semiconductor substrate | |
JPS5513995A (en) | Method of producing a semiconductor device | |
JPS56164569A (en) | Semiconductor device | |
JPS5796549A (en) | Manufacture of semiconductor device | |
JPS5567140A (en) | Method for manufacturing semiconductor device | |
JPS551132A (en) | Dry etching | |
JPS57199237A (en) | Manufacture of semiconductor device |