JPS5484469A - Cmos inverter circuit of low power consumption - Google Patents
Cmos inverter circuit of low power consumptionInfo
- Publication number
- JPS5484469A JPS5484469A JP15175877A JP15175877A JPS5484469A JP S5484469 A JPS5484469 A JP S5484469A JP 15175877 A JP15175877 A JP 15175877A JP 15175877 A JP15175877 A JP 15175877A JP S5484469 A JPS5484469 A JP S5484469A
- Authority
- JP
- Japan
- Prior art keywords
- type
- current
- cmos inverter
- normally
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To limit the through-type current of the normally-off type MOSFET by adding normally-on type N-channel MOSFET to the CMOS inverter, and thus to realize the reduction of the power consumption with the reduced area. CONSTITUTION:Normally-on type N-channel MOSFET3 for limitation of the through-type current is added to the CMOS inverter comprising normally-off type P-channel MOSFET1 and N-channel MOSFET2. Thus, the through-type current of the CMOS inverter is limited to the level under the saturation current of MOSFET3, and the scale of the current can be decided freely. Furthermore, the saturation current of MOSFET3 features the saturation property against the drain voltage, and thus the through-type current of the MOS inverter can be kept constant even with the increased power voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15175877A JPS5484469A (en) | 1977-12-19 | 1977-12-19 | Cmos inverter circuit of low power consumption |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15175877A JPS5484469A (en) | 1977-12-19 | 1977-12-19 | Cmos inverter circuit of low power consumption |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5484469A true JPS5484469A (en) | 1979-07-05 |
Family
ID=15525642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15175877A Pending JPS5484469A (en) | 1977-12-19 | 1977-12-19 | Cmos inverter circuit of low power consumption |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5484469A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5947844A (en) * | 1982-09-10 | 1984-03-17 | Nec Corp | Cmos inverter circuit |
JPS6037808A (en) * | 1983-08-10 | 1985-02-27 | Yokogawa Hewlett Packard Ltd | Mixer |
EP0140188A2 (en) * | 1983-10-28 | 1985-05-08 | Siemens Aktiengesellschaft | C-MOS inverter |
JPH03132211A (en) * | 1989-09-12 | 1991-06-05 | Samsung Semiconductor Inc | Ttl/cmos level converter |
JP2008141547A (en) * | 2006-12-04 | 2008-06-19 | Fuji Electric Device Technology Co Ltd | Delay circuit |
-
1977
- 1977-12-19 JP JP15175877A patent/JPS5484469A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5947844A (en) * | 1982-09-10 | 1984-03-17 | Nec Corp | Cmos inverter circuit |
JPS6037808A (en) * | 1983-08-10 | 1985-02-27 | Yokogawa Hewlett Packard Ltd | Mixer |
EP0140188A2 (en) * | 1983-10-28 | 1985-05-08 | Siemens Aktiengesellschaft | C-MOS inverter |
JPH03132211A (en) * | 1989-09-12 | 1991-06-05 | Samsung Semiconductor Inc | Ttl/cmos level converter |
JP2008141547A (en) * | 2006-12-04 | 2008-06-19 | Fuji Electric Device Technology Co Ltd | Delay circuit |
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