JPS5453864A - Monitoring method of line widths - Google Patents

Monitoring method of line widths

Info

Publication number
JPS5453864A
JPS5453864A JP12066877A JP12066877A JPS5453864A JP S5453864 A JPS5453864 A JP S5453864A JP 12066877 A JP12066877 A JP 12066877A JP 12066877 A JP12066877 A JP 12066877A JP S5453864 A JPS5453864 A JP S5453864A
Authority
JP
Japan
Prior art keywords
patterns
line widths
positive
stepwise
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12066877A
Other languages
Japanese (ja)
Other versions
JPS5646259B2 (en
Inventor
Ryoji Tokari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP12066877A priority Critical patent/JPS5453864A/en
Publication of JPS5453864A publication Critical patent/JPS5453864A/en
Publication of JPS5646259B2 publication Critical patent/JPS5646259B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To simplify the monitoring method of line widths by using the original picture having a plurality of positive patterns and negative patterns of stepwise varied line widths, performing photoetching while reversing the stepwise increase are decrease of line widths and mutually comparing the line widths having been formed.
CONSTITUTION: A plurality of positive patterns 1 and a plurality of negative patterns 2 are formed on a mask being the original picture, and these patterns are provided parallel with the line widths thereof being varied stepwise at each specified value respectively. And yet, the increase and decrease in the patterns are made in opposite directions and are corresponded to monitoring pellets. Next, photo resist process is performed by using this mask and the positive and negative patterns corresponding to the monitor pellet portions 4 of a semiconductor wafer 3 are formed. If at this time the exposure time is adequate, the line widths of the exposed patterns become exactly equal in the pattern portions of the same line width, but if the exposure time is excessive or insufficient, the patterns in the deviated directions align and the inadequateness thereof is readly identified
COPYRIGHT: (C)1979,JPO&Japio
JP12066877A 1977-10-05 1977-10-05 Monitoring method of line widths Granted JPS5453864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12066877A JPS5453864A (en) 1977-10-05 1977-10-05 Monitoring method of line widths

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12066877A JPS5453864A (en) 1977-10-05 1977-10-05 Monitoring method of line widths

Publications (2)

Publication Number Publication Date
JPS5453864A true JPS5453864A (en) 1979-04-27
JPS5646259B2 JPS5646259B2 (en) 1981-10-31

Family

ID=14791950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12066877A Granted JPS5453864A (en) 1977-10-05 1977-10-05 Monitoring method of line widths

Country Status (1)

Country Link
JP (1) JPS5453864A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55147304A (en) * 1979-05-04 1980-11-17 Nec Corp Monitoring method of quantity of change in shape
JPS577933A (en) * 1980-06-19 1982-01-16 Nec Corp Manufacture of semiconductor device
JPS5950519A (en) * 1982-09-16 1984-03-23 Hitachi Ltd Control of photo resist process
JPS59201418A (en) * 1983-04-30 1984-11-15 Toshiba Corp Exposing apparatus
JPS59182966U (en) * 1983-05-20 1984-12-06 ソニー株式会社 Ceramic multilayer circuit board
JPS61159653A (en) * 1985-01-08 1986-07-19 Nec Corp Test reticle for reduced projection type exposure device
JPH0265151A (en) * 1988-05-17 1990-03-05 British Telecommun Plc <Bt> Line width loss measuring method
JPH05129178A (en) * 1991-10-31 1993-05-25 Toshiba Corp Method for measuring misalignment
JPH07122549A (en) * 1988-07-20 1995-05-12 Applied Materials Inc Method and apparatus for convergence of radiant energy beam as well as target for beam convergence
US5792673A (en) * 1995-01-31 1998-08-11 Yamaha Corporation Monitoring of eching
JP2004505433A (en) * 1999-11-18 2004-02-19 ピー・デイ・エフ　ソリユーシヨンズ　インコーポレイテツド System and method for product yield prediction

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55147304A (en) * 1979-05-04 1980-11-17 Nec Corp Monitoring method of quantity of change in shape
JPS577933A (en) * 1980-06-19 1982-01-16 Nec Corp Manufacture of semiconductor device
JPS5950519A (en) * 1982-09-16 1984-03-23 Hitachi Ltd Control of photo resist process
JPH0141246B2 (en) * 1983-04-30 1989-09-04 Tokyo Shibaura Electric Co
JPS59201418A (en) * 1983-04-30 1984-11-15 Toshiba Corp Exposing apparatus
JPS59182966U (en) * 1983-05-20 1984-12-06 ソニー株式会社 Ceramic multilayer circuit board
JPH0129801Y2 (en) * 1983-05-20 1989-09-11
JPS61159653A (en) * 1985-01-08 1986-07-19 Nec Corp Test reticle for reduced projection type exposure device
JPH058821B2 (en) * 1985-01-08 1993-02-03 Nippon Electric Co
JPH0265151A (en) * 1988-05-17 1990-03-05 British Telecommun Plc <Bt> Line width loss measuring method
JPH07122549A (en) * 1988-07-20 1995-05-12 Applied Materials Inc Method and apparatus for convergence of radiant energy beam as well as target for beam convergence
JPH05129178A (en) * 1991-10-31 1993-05-25 Toshiba Corp Method for measuring misalignment
US5792673A (en) * 1995-01-31 1998-08-11 Yamaha Corporation Monitoring of eching
JP2004505433A (en) * 1999-11-18 2004-02-19 ピー・デイ・エフ　ソリユーシヨンズ　インコーポレイテツド System and method for product yield prediction

Also Published As

Publication number Publication date
JPS5646259B2 (en) 1981-10-31

Similar Documents

Publication Publication Date Title
JPS5453864A (en) Monitoring method of line widths
JPS5595324A (en) Manufacturing method of semiconductor device
JPS5259580A (en) Photo etching method
JPS5361280A (en) Pattern projector
JPS5389673A (en) Fine pattern forming method of semiconductor device
JPS52143772A (en) Alignment method of masks using special reference marks
JPS5272175A (en) Mask patterning of resist meterial
JPS5578531A (en) Semiconductor substrate
JPS52143774A (en) Negative positioning mechanism in reduction projecting and printing apparatus
JPS5380168A (en) Exposure method for electronic beam
JPS5376757A (en) Photoetching method
JPS5359370A (en) Positioning method
JPS5251870A (en) Electron bean exposure method
JPS5277671A (en) Method and equipment of masking
JPS5215266A (en) Pattern printing unit
JPS5314570A (en) Production of photo mask
JPS5382173A (en) Positioning method
JPS56162834A (en) Semiconductor device
JPS5346283A (en) Character exposure apparatus
JPS56160040A (en) Printing device
JPS57143785A (en) Magnetic bubble memory element
JPS5382268A (en) Production of mask
JPS5244570A (en) Photoetching method
JPS5599720A (en) Method and device of manufacturing semiconductor device
JPS5681949A (en) Defect inspecition device for semiconductor wafer, etc.