JPS5450948A - Bidirectional constant current circuit - Google Patents

Bidirectional constant current circuit

Info

Publication number
JPS5450948A
JPS5450948A JP11754477A JP11754477A JPS5450948A JP S5450948 A JPS5450948 A JP S5450948A JP 11754477 A JP11754477 A JP 11754477A JP 11754477 A JP11754477 A JP 11754477A JP S5450948 A JPS5450948 A JP S5450948A
Authority
JP
Japan
Prior art keywords
resistor
constant current
field effect
effect transistor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11754477A
Other languages
Japanese (ja)
Inventor
Naomitsu Yoshikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11754477A priority Critical patent/JPS5450948A/en
Publication of JPS5450948A publication Critical patent/JPS5450948A/en
Pending legal-status Critical Current

Links

Landscapes

  • Control Of Electrical Variables (AREA)

Abstract

PURPOSE: To promote a simplification of circuit construction, by using one field effect transistor to obtain a bidirectional constant current characteristic.
CONSTITUTION: A current I1 flows into a drain D of field effect transistor Q to appear in a source S with a voltage drop produced in a resistor R3. This causes a potential at another end of the resistor R3 to become lower than that at the drain side D of the field effect transistor Q, with a diode D4 turned on and the other diode D3 becoming a state of off. Accordingly, as a coltage at another end of a resistor R4 is applied to a gate G of the field effect transistor Q as a constant negative bias voltage through the diode D4, a constant current +1, determined by the resistor R4, flows in a direction from the drain D to the source S. And in a direction from the source S to the drain D, a constant current +2, determined by the resistor R3, flows in the same manner of operation as described in the above
COPYRIGHT: (C)1979,JPO&Japio
JP11754477A 1977-09-30 1977-09-30 Bidirectional constant current circuit Pending JPS5450948A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11754477A JPS5450948A (en) 1977-09-30 1977-09-30 Bidirectional constant current circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11754477A JPS5450948A (en) 1977-09-30 1977-09-30 Bidirectional constant current circuit

Publications (1)

Publication Number Publication Date
JPS5450948A true JPS5450948A (en) 1979-04-21

Family

ID=14714419

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11754477A Pending JPS5450948A (en) 1977-09-30 1977-09-30 Bidirectional constant current circuit

Country Status (1)

Country Link
JP (1) JPS5450948A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710818A (en) * 1981-02-09 1982-01-20 Yokogawa Hokushin Electric Corp Bipolar type constant current device
US5191279A (en) * 1990-03-15 1993-03-02 Ixys Corporation Current limiting method and apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710818A (en) * 1981-02-09 1982-01-20 Yokogawa Hokushin Electric Corp Bipolar type constant current device
US5191279A (en) * 1990-03-15 1993-03-02 Ixys Corporation Current limiting method and apparatus

Similar Documents

Publication Publication Date Title
JPS55115729A (en) Mos transistor circuit
JPS55149871A (en) Line voltage detector
JPS5450948A (en) Bidirectional constant current circuit
JPS5318390A (en) Mos type field effect transistor circuit
JPS57160206A (en) Fine current source circuit
JPS5238889A (en) Vertical junction type field effect transistor
JPS64817A (en) Logic circuit
JPS5348489A (en) Field effect transistor
JPS5629718A (en) Reference voltage circuit device
JPS5543643A (en) Constant voltage circuit
JPS53127628A (en) Dc-dc converter
JPS547149A (en) Constant current circuit
JPS5432274A (en) Junction type field effect transistor
JPS5521135A (en) Integrated circuit
JPS559231A (en) Generation circuit of reference voltage
JPS54143183A (en) Temperature detecting circuit
JPS5541085A (en) Oscillation circuit
JPS5380551A (en) Constant-voltage circuit
JPS5696529A (en) Decoder circuit
JPS5421284A (en) Field effect transistor of longitudinal junction type
JPS55109004A (en) Detection circuit
JPS52107554A (en) Constant current source circuit
JPS52123179A (en) Mos type semiconductor device and its production
JPS5359846A (en) Constant voltage circuit
JPS54111780A (en) Noise voltage selection method for dual transistor