JPS5447473A - Method of implanting ion to semiconductor - Google Patents
Method of implanting ion to semiconductorInfo
- Publication number
- JPS5447473A JPS5447473A JP11261177A JP11261177A JPS5447473A JP S5447473 A JPS5447473 A JP S5447473A JP 11261177 A JP11261177 A JP 11261177A JP 11261177 A JP11261177 A JP 11261177A JP S5447473 A JPS5447473 A JP S5447473A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- implanting ion
- implanting
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11261177A JPS5447473A (en) | 1977-09-21 | 1977-09-21 | Method of implanting ion to semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11261177A JPS5447473A (en) | 1977-09-21 | 1977-09-21 | Method of implanting ion to semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5447473A true JPS5447473A (en) | 1979-04-14 |
JPS617726B2 JPS617726B2 (en) | 1986-03-08 |
Family
ID=14591058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11261177A Granted JPS5447473A (en) | 1977-09-21 | 1977-09-21 | Method of implanting ion to semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5447473A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59200416A (en) * | 1983-04-28 | 1984-11-13 | Toshiba Corp | Manufacture of semiconductor device |
JPS60235453A (en) * | 1984-05-09 | 1985-11-22 | Hitachi Ltd | Manufacture of semiconductor device |
JPS61248522A (en) * | 1985-04-26 | 1986-11-05 | Mitsubishi Electric Corp | Impurity layer forming apparatus |
JPH02126634A (en) * | 1988-11-07 | 1990-05-15 | Hitachi Ltd | Manufacture of semiconductor device and manufacturing device therefor |
US5021119A (en) * | 1987-11-13 | 1991-06-04 | Kopin Corporation | Zone-melting recrystallization process |
JPH03278430A (en) * | 1990-03-28 | 1991-12-10 | Kawasaki Steel Corp | Manufacture of semiconductor device |
JPH04212417A (en) * | 1990-03-27 | 1992-08-04 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
US5453153A (en) * | 1987-11-13 | 1995-09-26 | Kopin Corporation | Zone-melting recrystallization process |
-
1977
- 1977-09-21 JP JP11261177A patent/JPS5447473A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59200416A (en) * | 1983-04-28 | 1984-11-13 | Toshiba Corp | Manufacture of semiconductor device |
JPS60235453A (en) * | 1984-05-09 | 1985-11-22 | Hitachi Ltd | Manufacture of semiconductor device |
JPS61248522A (en) * | 1985-04-26 | 1986-11-05 | Mitsubishi Electric Corp | Impurity layer forming apparatus |
US5021119A (en) * | 1987-11-13 | 1991-06-04 | Kopin Corporation | Zone-melting recrystallization process |
US5453153A (en) * | 1987-11-13 | 1995-09-26 | Kopin Corporation | Zone-melting recrystallization process |
JPH02126634A (en) * | 1988-11-07 | 1990-05-15 | Hitachi Ltd | Manufacture of semiconductor device and manufacturing device therefor |
JPH04212417A (en) * | 1990-03-27 | 1992-08-04 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH03278430A (en) * | 1990-03-28 | 1991-12-10 | Kawasaki Steel Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS617726B2 (en) | 1986-03-08 |
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