JPS54162452A - Manufacture of semiconductor and its unit - Google Patents
Manufacture of semiconductor and its unitInfo
- Publication number
- JPS54162452A JPS54162452A JP7173278A JP7173278A JPS54162452A JP S54162452 A JPS54162452 A JP S54162452A JP 7173278 A JP7173278 A JP 7173278A JP 7173278 A JP7173278 A JP 7173278A JP S54162452 A JPS54162452 A JP S54162452A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- ions
- emit
- laser beam
- restore
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To restore the crystal damages and to activate the impurities, by emitting ions on the surface of semiconductor substrate at the same time or after that, emitting laser beam.
CONSTITUTION: Various ions produced at the ion source 1 are drawn out and desired ions only are selected with the mass analysis electro magnet 2. The ions are accelerated 3 to desired energy and fed to the target 4, to emit the entire surface of semiconductor substrate uniformly. At the same time or after the emission, the laser beam with high energy and output is generated 5 to emit it on the entire surface of the semiconductor substrate uniformly. In this case, since the light axis of the laser beam is in agreement with the ion beam axis immediately before the semiconductor substrate emission, the both beams emit the substrate surface with the same angle to perform laser annealing for the ion injection layer, allowing to restore the crystallity and to activate the impurities.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7173278A JPS54162452A (en) | 1978-06-13 | 1978-06-13 | Manufacture of semiconductor and its unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7173278A JPS54162452A (en) | 1978-06-13 | 1978-06-13 | Manufacture of semiconductor and its unit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54162452A true JPS54162452A (en) | 1979-12-24 |
Family
ID=13468980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7173278A Pending JPS54162452A (en) | 1978-06-13 | 1978-06-13 | Manufacture of semiconductor and its unit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54162452A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122127A (en) * | 1980-02-01 | 1981-09-25 | Commissariat Energie Atomique | Method of doping semiconductor at high speed |
JPS5850737A (en) * | 1981-09-21 | 1983-03-25 | Mitsubishi Electric Corp | Manufacture apparatus for semiconductor element |
JPS5856362A (en) * | 1981-09-29 | 1983-04-04 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS58110042A (en) * | 1981-12-24 | 1983-06-30 | Fujitsu Ltd | Beam irradiation apparatus |
JPS58164135A (en) * | 1982-03-25 | 1983-09-29 | Agency Of Ind Science & Technol | Semiconductor processing device using convergent ion beam |
JP2010153929A (en) * | 2010-04-05 | 2010-07-08 | Fuji Electric Systems Co Ltd | Manufacturing method of semiconductor device and manufacturing apparatus of semiconductor device |
KR20170095997A (en) * | 2014-12-18 | 2017-08-23 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | Dynamic heating method and system for wafer processing |
-
1978
- 1978-06-13 JP JP7173278A patent/JPS54162452A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122127A (en) * | 1980-02-01 | 1981-09-25 | Commissariat Energie Atomique | Method of doping semiconductor at high speed |
JPS5850737A (en) * | 1981-09-21 | 1983-03-25 | Mitsubishi Electric Corp | Manufacture apparatus for semiconductor element |
JPS6322610B2 (en) * | 1981-09-21 | 1988-05-12 | Mitsubishi Electric Corp | |
JPS5856362A (en) * | 1981-09-29 | 1983-04-04 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6342418B2 (en) * | 1981-09-29 | 1988-08-23 | Fujitsu Ltd | |
JPS58110042A (en) * | 1981-12-24 | 1983-06-30 | Fujitsu Ltd | Beam irradiation apparatus |
JPS58164135A (en) * | 1982-03-25 | 1983-09-29 | Agency Of Ind Science & Technol | Semiconductor processing device using convergent ion beam |
JPS6352429B2 (en) * | 1982-03-25 | 1988-10-19 | Kogyo Gijutsuin | |
JP2010153929A (en) * | 2010-04-05 | 2010-07-08 | Fuji Electric Systems Co Ltd | Manufacturing method of semiconductor device and manufacturing apparatus of semiconductor device |
KR20170095997A (en) * | 2014-12-18 | 2017-08-23 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | Dynamic heating method and system for wafer processing |
JP2018504774A (en) * | 2014-12-18 | 2018-02-15 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | Dynamic heating method and system for wafer processing |
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