JPS54162452A - Manufacture of semiconductor and its unit - Google Patents

Manufacture of semiconductor and its unit

Info

Publication number
JPS54162452A
JPS54162452A JP7173278A JP7173278A JPS54162452A JP S54162452 A JPS54162452 A JP S54162452A JP 7173278 A JP7173278 A JP 7173278A JP 7173278 A JP7173278 A JP 7173278A JP S54162452 A JPS54162452 A JP S54162452A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
ions
emit
laser beam
restore
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7173278A
Other languages
Japanese (ja)
Inventor
Yoichi Akasaka
Katsuhiro Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7173278A priority Critical patent/JPS54162452A/en
Publication of JPS54162452A publication Critical patent/JPS54162452A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To restore the crystal damages and to activate the impurities, by emitting ions on the surface of semiconductor substrate at the same time or after that, emitting laser beam.
CONSTITUTION: Various ions produced at the ion source 1 are drawn out and desired ions only are selected with the mass analysis electro magnet 2. The ions are accelerated 3 to desired energy and fed to the target 4, to emit the entire surface of semiconductor substrate uniformly. At the same time or after the emission, the laser beam with high energy and output is generated 5 to emit it on the entire surface of the semiconductor substrate uniformly. In this case, since the light axis of the laser beam is in agreement with the ion beam axis immediately before the semiconductor substrate emission, the both beams emit the substrate surface with the same angle to perform laser annealing for the ion injection layer, allowing to restore the crystallity and to activate the impurities.
COPYRIGHT: (C)1979,JPO&Japio
JP7173278A 1978-06-13 1978-06-13 Manufacture of semiconductor and its unit Pending JPS54162452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7173278A JPS54162452A (en) 1978-06-13 1978-06-13 Manufacture of semiconductor and its unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7173278A JPS54162452A (en) 1978-06-13 1978-06-13 Manufacture of semiconductor and its unit

Publications (1)

Publication Number Publication Date
JPS54162452A true JPS54162452A (en) 1979-12-24

Family

ID=13468980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7173278A Pending JPS54162452A (en) 1978-06-13 1978-06-13 Manufacture of semiconductor and its unit

Country Status (1)

Country Link
JP (1) JPS54162452A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122127A (en) * 1980-02-01 1981-09-25 Commissariat Energie Atomique Method of doping semiconductor at high speed
JPS5850737A (en) * 1981-09-21 1983-03-25 Mitsubishi Electric Corp Manufacture apparatus for semiconductor element
JPS5856362A (en) * 1981-09-29 1983-04-04 Fujitsu Ltd Manufacture of semiconductor device
JPS58110042A (en) * 1981-12-24 1983-06-30 Fujitsu Ltd Beam irradiation apparatus
JPS58164135A (en) * 1982-03-25 1983-09-29 Agency Of Ind Science & Technol Semiconductor processing device using convergent ion beam
JP2010153929A (en) * 2010-04-05 2010-07-08 Fuji Electric Systems Co Ltd Manufacturing method of semiconductor device and manufacturing apparatus of semiconductor device
KR20170095997A (en) * 2014-12-18 2017-08-23 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. Dynamic heating method and system for wafer processing

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122127A (en) * 1980-02-01 1981-09-25 Commissariat Energie Atomique Method of doping semiconductor at high speed
JPS5850737A (en) * 1981-09-21 1983-03-25 Mitsubishi Electric Corp Manufacture apparatus for semiconductor element
JPS6322610B2 (en) * 1981-09-21 1988-05-12 Mitsubishi Electric Corp
JPS5856362A (en) * 1981-09-29 1983-04-04 Fujitsu Ltd Manufacture of semiconductor device
JPS6342418B2 (en) * 1981-09-29 1988-08-23 Fujitsu Ltd
JPS58110042A (en) * 1981-12-24 1983-06-30 Fujitsu Ltd Beam irradiation apparatus
JPS58164135A (en) * 1982-03-25 1983-09-29 Agency Of Ind Science & Technol Semiconductor processing device using convergent ion beam
JPS6352429B2 (en) * 1982-03-25 1988-10-19 Kogyo Gijutsuin
JP2010153929A (en) * 2010-04-05 2010-07-08 Fuji Electric Systems Co Ltd Manufacturing method of semiconductor device and manufacturing apparatus of semiconductor device
KR20170095997A (en) * 2014-12-18 2017-08-23 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. Dynamic heating method and system for wafer processing
JP2018504774A (en) * 2014-12-18 2018-02-15 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド Dynamic heating method and system for wafer processing

Similar Documents

Publication Publication Date Title
JPS54162452A (en) Manufacture of semiconductor and its unit
GB594201A (en) Apparatus for producing hardened optical coatings by electron bombardment
JPS5367099A (en) Electron beam shape accelerator
JPS5226844A (en) Microscope
DE69118286T2 (en) Source for generating a fast atom beam
JPS53102677A (en) Ion beam radiating unit
JPS5693314A (en) Ion injector
JPS51113468A (en) Solid surface processing system
JPS53119671A (en) Ion implanting method
JPS5570492A (en) Fusion-cutting method of silicon steel plates
JPS5254897A (en) Plasma ion source for solid materials
JPS53100841A (en) Beam shaping optical system
FR2349831A1 (en) Light emission excitation method for laser microspectral analysis - using auxiliary targets and partial beams for uniform and high excitation
JPS54162453A (en) Semiconductor manufacturing unit
JPS57106114A (en) Ion beam sputtering apparatus
JPS53112670A (en) Monitor method of ion etching
JPS5292473A (en) Main lens electric field forming method of inline type 3 beam electron gun
JPS544567A (en) Growing apparatus of ion beam crystal
JPS5227075A (en) Evaporation rate controlling apparatus
JPS55162235A (en) Forming nitride film
Basun et al. Light induced three-dimensional polar structure in ruby crystals
JPS54865A (en) Molecular beam crystal growing method
JPS57168795A (en) Method and device for laser process
JPS53119670A (en) Ion implanting method and apparatus for the same
JPS5326193A (en) Observing method of ion beam radiati on point positions