JPS54153590A - Surface acoustoc wave device - Google Patents
Surface acoustoc wave deviceInfo
- Publication number
- JPS54153590A JPS54153590A JP6266678A JP6266678A JPS54153590A JP S54153590 A JPS54153590 A JP S54153590A JP 6266678 A JP6266678 A JP 6266678A JP 6266678 A JP6266678 A JP 6266678A JP S54153590 A JPS54153590 A JP S54153590A
- Authority
- JP
- Japan
- Prior art keywords
- sealed
- insulation film
- film
- wave device
- acoustic wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
PURPOSE:To establish the sealing unit for surface acoustic wave devices, which is low in cost and excellent in sealed condition. CONSTITUTION:The crossing comb type electrode 22 of Al or the like is formed on the piezoelectric substrate 21, and after forming the insulation film 23 on it, the conductor layer 24 is formed on the film 23 (Figs. a, b). Next, the holes 25 to perform wire bonding to the input and output terminals and the ground terminal of the transducer is formed. (Fig. c) After that, wire bonding is made with Al or the like, and the entire unit is sealed with molding resin. Further, in this case, the Al film 24 is connected to ground. Thus, the insulation film layer is formed on the suface of the surface acoustic wave device providing electrodes on the piezoelectric substrate, and further, the insulation film forming the conductive layer on it is sealed with molding resin.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6266678A JPS54153590A (en) | 1978-05-24 | 1978-05-24 | Surface acoustoc wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6266678A JPS54153590A (en) | 1978-05-24 | 1978-05-24 | Surface acoustoc wave device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54153590A true JPS54153590A (en) | 1979-12-03 |
Family
ID=13206838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6266678A Pending JPS54153590A (en) | 1978-05-24 | 1978-05-24 | Surface acoustoc wave device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54153590A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5592730A (en) * | 1994-07-29 | 1997-01-14 | Hewlett-Packard Company | Method for fabricating a Z-axis conductive backing layer for acoustic transducers using etched leadframes |
-
1978
- 1978-05-24 JP JP6266678A patent/JPS54153590A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5592730A (en) * | 1994-07-29 | 1997-01-14 | Hewlett-Packard Company | Method for fabricating a Z-axis conductive backing layer for acoustic transducers using etched leadframes |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5795800A (en) | Electro-acoustic converter | |
KR890702161A (en) | Integrated circuit device and manufacturing method thereof | |
GB752040A (en) | Piezoelectric transducer | |
GB1352538A (en) | Broadband high efficiency thin film piezoelectric transducers | |
EP0196839A3 (en) | Piezoelectric transducer and components therefor | |
JPS529389A (en) | Surface acoustic wave device | |
JPS54153590A (en) | Surface acoustoc wave device | |
JPS56156015A (en) | Elastic surface wave device | |
JPS5661679A (en) | Indicating device | |
GB1425849A (en) | Tapped praetersonic bulk delay line | |
JPS5467792A (en) | Elastic surface wave element | |
JPS54153545A (en) | Surface acoustic wave device element | |
JPS558191A (en) | Elastic surface wave device | |
JPS5530243A (en) | Underwater sound transmitter-receiver | |
JPS5452958A (en) | Elastic surface wave device | |
JPS6478511A (en) | Surface acoustic wave device | |
ATE30818T1 (en) | ELECTROMECHANICAL CONVERTER. | |
JPS5469362A (en) | Ultrasonic wave tranceducer system | |
JPS5570107A (en) | Waveguide-type solid state oscillator | |
JPS55148449A (en) | Semiconductor device | |
JPS5533382A (en) | Surface wave element | |
JPS575183A (en) | Ultrasonic coordinate input equipment | |
GB1507333A (en) | Piezoelectric devices | |
JPS5843140Y2 (en) | piezoelectric switch | |
JPS5591852A (en) | Hybrid semiconductor device containing elastic surface wave element |