JPS54127690A - Semiconductor pressure converter and its manufacture - Google Patents

Semiconductor pressure converter and its manufacture

Info

Publication number
JPS54127690A
JPS54127690A JP3623578A JP3623578A JPS54127690A JP S54127690 A JPS54127690 A JP S54127690A JP 3623578 A JP3623578 A JP 3623578A JP 3623578 A JP3623578 A JP 3623578A JP S54127690 A JPS54127690 A JP S54127690A
Authority
JP
Japan
Prior art keywords
layer
pressure converter
semiconductor pressure
manufacture
receiving plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3623578A
Other languages
Japanese (ja)
Inventor
Josuke Nakada
Shoichi Kakimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3623578A priority Critical patent/JPS54127690A/en
Publication of JPS54127690A publication Critical patent/JPS54127690A/en
Pending legal-status Critical Current

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  • Pressure Sensors (AREA)

Abstract

PURPOSE: To realize a semiconductor pressure converter as well as its manufacturing process in which the output dispersion is reduced with increased output itself by forming the part for the pressure receiving plate and the part for the fixing stage independently and then bonding then together.
CONSTITUTION: Resistance element 13 and conducting layer 14 are formed on one surface of silicon wafer 101, and then silicon wafer 102 is prepared on fixing stage 12a with pierced hole 18 drilled. Thus, stage 12a is formed to be bonded with adhesive 17. Then the etching is applied to the surface opposite to the adhesion surface of wafer 101 to secure the thickness required for pressure receiving plate 11a. As a result, layer 14 is exposed over the surface, and then electrode layer 15 is formed on the exposed surface of layer 14.
COPYRIGHT: (C)1979,JPO&Japio
JP3623578A 1978-03-28 1978-03-28 Semiconductor pressure converter and its manufacture Pending JPS54127690A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3623578A JPS54127690A (en) 1978-03-28 1978-03-28 Semiconductor pressure converter and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3623578A JPS54127690A (en) 1978-03-28 1978-03-28 Semiconductor pressure converter and its manufacture

Publications (1)

Publication Number Publication Date
JPS54127690A true JPS54127690A (en) 1979-10-03

Family

ID=12464102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3623578A Pending JPS54127690A (en) 1978-03-28 1978-03-28 Semiconductor pressure converter and its manufacture

Country Status (1)

Country Link
JP (1) JPS54127690A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828876A (en) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp Semiconductor pressure sensor
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828876A (en) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp Semiconductor pressure sensor
US4975390A (en) * 1986-12-18 1990-12-04 Nippondenso Co. Ltd. Method of fabricating a semiconductor pressure sensor

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