JPS54109765A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54109765A JPS54109765A JP1747678A JP1747678A JPS54109765A JP S54109765 A JPS54109765 A JP S54109765A JP 1747678 A JP1747678 A JP 1747678A JP 1747678 A JP1747678 A JP 1747678A JP S54109765 A JPS54109765 A JP S54109765A
- Authority
- JP
- Japan
- Prior art keywords
- film
- substrate
- layer
- porous protective
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To obtain a PN junction of a fixed depth in a short time without causing the roughness on the surface of the device by coating the silicon compound on the semiconductor substrate to grow the porous protective film through heating in the vacuum and then diffusing the opposite conducting impurity to the substrate through the porous protective film.
CONSTITUTION: N-type layer of GaAsP or the like is vapor-grown on N-type substrate 6 of GaAs or the like, and film 8 composed of the silicon compound such as the silicon hydroxide dissolved into alcohol or the like is formed 500W1000Å thick on layer 7. Then film 8 is given a heat treatment about one hour in vacuum and at 400°C or more to evaporate the alcohol of film 8. thus, film 8 can be converted into porous protective film 9. After this, substrate 6 is put into the quartz tube along with AsZn which is to be the P-type impurity diffusion source, and Zn is diffused through the hole of film 9 through heating in the high-vacuum atmosphere. Thus, shallow P-type layer 10 is formed on layer 7. Then the unnecessary film 9 dissolved away by the hydrofluoric acid, and the electrodes are attached on the surface of layer 10 as well as on the back of substrate 6.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1747678A JPS54109765A (en) | 1978-02-16 | 1978-02-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1747678A JPS54109765A (en) | 1978-02-16 | 1978-02-16 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54109765A true JPS54109765A (en) | 1979-08-28 |
Family
ID=11945049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1747678A Pending JPS54109765A (en) | 1978-02-16 | 1978-02-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54109765A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0689235A1 (en) * | 1994-06-23 | 1995-12-27 | Texas Instruments Incorporated | Porous dielectric material with improved pore surface properties for electronics applications |
| US6319852B1 (en) | 1995-11-16 | 2001-11-20 | Texas Instruments Incorporated | Nanoporous dielectric thin film formation using a post-deposition catalyst |
| US6380105B1 (en) | 1996-11-14 | 2002-04-30 | Texas Instruments Incorporated | Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates |
| US6437007B1 (en) | 1995-11-16 | 2002-08-20 | Texas Instruments Incorporated | Aerogel thin film formation from multi-solvent systems |
| US6821554B2 (en) | 1995-11-16 | 2004-11-23 | Texas Instruments Incorporated | Polyol-based method for forming thin film aerogels on semiconductor substrates |
-
1978
- 1978-02-16 JP JP1747678A patent/JPS54109765A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0689235A1 (en) * | 1994-06-23 | 1995-12-27 | Texas Instruments Incorporated | Porous dielectric material with improved pore surface properties for electronics applications |
| US6319852B1 (en) | 1995-11-16 | 2001-11-20 | Texas Instruments Incorporated | Nanoporous dielectric thin film formation using a post-deposition catalyst |
| US6437007B1 (en) | 1995-11-16 | 2002-08-20 | Texas Instruments Incorporated | Aerogel thin film formation from multi-solvent systems |
| US6645878B2 (en) | 1995-11-16 | 2003-11-11 | Texas Instruments Incorporated | Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates |
| US6821554B2 (en) | 1995-11-16 | 2004-11-23 | Texas Instruments Incorporated | Polyol-based method for forming thin film aerogels on semiconductor substrates |
| US6380105B1 (en) | 1996-11-14 | 2002-04-30 | Texas Instruments Incorporated | Low volatility solvent-based method for forming thin film nanoporous aerogels on semiconductor substrates |
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