JPS5391076A - Gas phase reaction apparatus - Google Patents

Gas phase reaction apparatus

Info

Publication number
JPS5391076A
JPS5391076A JP595277A JP595277A JPS5391076A JP S5391076 A JPS5391076 A JP S5391076A JP 595277 A JP595277 A JP 595277A JP 595277 A JP595277 A JP 595277A JP S5391076 A JPS5391076 A JP S5391076A
Authority
JP
Japan
Prior art keywords
gas phase
phase reaction
reaction apparatus
substrate
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP595277A
Other languages
Japanese (ja)
Inventor
Shinpei Iijima
Yuji Tanida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP595277A priority Critical patent/JPS5391076A/en
Publication of JPS5391076A publication Critical patent/JPS5391076A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Abstract

PURPOSE:To make small the film thickness distribution of thin film formed on substrate, by heating semiconductive substrate with radiant heat from jig at the above mentioned apparatus used high frequency induction heating.
JP595277A 1977-01-24 1977-01-24 Gas phase reaction apparatus Pending JPS5391076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP595277A JPS5391076A (en) 1977-01-24 1977-01-24 Gas phase reaction apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP595277A JPS5391076A (en) 1977-01-24 1977-01-24 Gas phase reaction apparatus

Publications (1)

Publication Number Publication Date
JPS5391076A true JPS5391076A (en) 1978-08-10

Family

ID=11625220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP595277A Pending JPS5391076A (en) 1977-01-24 1977-01-24 Gas phase reaction apparatus

Country Status (1)

Country Link
JP (1) JPS5391076A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474612A (en) * 1990-03-19 1995-12-12 Kabushiki Kaisha Toshiba Vapor-phase deposition apparatus and vapor-phase deposition method
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474612A (en) * 1990-03-19 1995-12-12 Kabushiki Kaisha Toshiba Vapor-phase deposition apparatus and vapor-phase deposition method
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors

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