JPS5368079A - Short channel mos transistor and method of producing same - Google Patents
Short channel mos transistor and method of producing sameInfo
- Publication number
- JPS5368079A JPS5368079A JP14291776A JP14291776A JPS5368079A JP S5368079 A JPS5368079 A JP S5368079A JP 14291776 A JP14291776 A JP 14291776A JP 14291776 A JP14291776 A JP 14291776A JP S5368079 A JPS5368079 A JP S5368079A
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- channel mos
- short channel
- producing same
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14291776A JPS5368079A (en) | 1976-11-30 | 1976-11-30 | Short channel mos transistor and method of producing same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14291776A JPS5368079A (en) | 1976-11-30 | 1976-11-30 | Short channel mos transistor and method of producing same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5368079A true JPS5368079A (en) | 1978-06-17 |
Family
ID=15326618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14291776A Pending JPS5368079A (en) | 1976-11-30 | 1976-11-30 | Short channel mos transistor and method of producing same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5368079A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53119686A (en) * | 1977-03-29 | 1978-10-19 | Agency Of Ind Science & Technol | Production of semiconductor device |
JPS5435682A (en) * | 1977-08-26 | 1979-03-15 | Agency Of Ind Science & Technol | Manufacture of field effect transistor |
JPS559477A (en) * | 1978-07-06 | 1980-01-23 | Nec Corp | Method of making semiconductor device |
JPS5630765A (en) * | 1979-08-20 | 1981-03-27 | Ibm | Method of manufacturing insulated gate type transistor |
JPS5961185A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of metal insulator semiconductor field-effect semiconductor device |
JPH02291173A (en) * | 1989-04-28 | 1990-11-30 | Nec Corp | Manufacture of mos transistor |
-
1976
- 1976-11-30 JP JP14291776A patent/JPS5368079A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53119686A (en) * | 1977-03-29 | 1978-10-19 | Agency Of Ind Science & Technol | Production of semiconductor device |
JPS6032992B2 (en) * | 1977-03-29 | 1985-07-31 | 工業技術院長 | Manufacturing method of semiconductor device |
JPS5435682A (en) * | 1977-08-26 | 1979-03-15 | Agency Of Ind Science & Technol | Manufacture of field effect transistor |
JPS559477A (en) * | 1978-07-06 | 1980-01-23 | Nec Corp | Method of making semiconductor device |
JPS5630765A (en) * | 1979-08-20 | 1981-03-27 | Ibm | Method of manufacturing insulated gate type transistor |
JPS5961185A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of metal insulator semiconductor field-effect semiconductor device |
JPH02291173A (en) * | 1989-04-28 | 1990-11-30 | Nec Corp | Manufacture of mos transistor |
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